Page 115 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

BSL215CL6327HTSA1
Infineon Technologies

MOSFET N/P-CH 20V 1.5A TSOP-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock4,752
IRF7379TR
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock292,884
2N7334
Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

Package: 14-DIP (0.300", 7.62mm)

Stock7,552
GWM120-0075X1-SLSAM
IXYS

MOSFET 6N-CH 75V 110A ISOPLUS

Package: 17-SMD, Flat Leads

Stock4,256
FDC6036P_F077
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 5A 6SSOT

Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

Stock6,288
APTC80DSK29T3G
Microsemi Corporation

MOSFET 2N-CH 800V 15A SP3

Package: SP3

Stock4,528
ZXMD63P03XTC
Diodes Incorporated

MOSFET 2P-CH 30V 8MSOP

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock30,012
APTMC60TL11CT3AG
Microsemi Corporation

MOSFET 4N-CH 1200V 28A SP3

Package: SP3

Stock3,232
DMNH4026SSD-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V SO-8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,200
BSC750N10ND G
Infineon Technologies

MOSFET 2N-CH 100V 3.2A 8TDSON

Package: 8-PowerVDFN

Stock2,128
FDMS3604S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/23A 8-PQFN

Package: 8-PowerTDFN

Stock47,388
MCH6664-TL-W
ON Semiconductor

MOSFET 2P-CH 30V 1.5A SOT363

Package: 6-SMD, Flat Leads

Stock5,744
SI7212DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 4.9A 1212-8

Package: PowerPAK? 1212-8 Dual

Stock161,460
AO4838
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 11A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock24,462
EFC3J018NUZTDG
onsemi

MOSFET 2N-CH 20V 23A 6WLCSP

Package: -

Stock9,438
SH8KC7TB1
Rohm Semiconductor

MOSFET 2N-CH 60V 10.5A 8SOP

Package: -

Stock5,658
HP8MC5TB1
Rohm Semiconductor

60V 12A, DUAL NCH+PCH, HSOP8, PO

Package: -

Request a Quote
FS05MR12A6MA1BBPSA1
Infineon Technologies

SIC 1200V 200A AG-HYBRIDD

Package: -

Stock30
DMN52D0UDWQ-7
Diodes Incorporated

MOSFET BVDSS: 31V~40V SOT363 T&R

Package: -

Request a Quote
DMT3020LFDBQ-13
Diodes Incorporated

MOSFET 2N-CH 30V 7.7A 6UDFN

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSL215CL6327HTSA1	Infineon Technologies	MOSFET N/P-CH 20V 1.5A TSOP-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock4,752	Logic Level Gate	20V	1.5A	140 mOhm @ 1.5A, 4.5V	1.2V @ 3.7µA	0.73nC @ 4.5V	143pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
IRF7379TR	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock292,884	Standard	30V	5.8A, 4.3A	45 mOhm @ 5.8A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2N7334	Microsemi Corporation	MOSFET 4N-CH 100V 1A MO-036AB FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	Package: 14-DIP (0.300", 7.62mm)	Stock7,552	Standard	100V	1A	700 mOhm @ 600mA, 10V	4V @ 250µA	60nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	MO-036AB
GWM120-0075X1-SLSAM	IXYS	MOSFET 6N-CH 75V 110A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 110A Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	Package: 17-SMD, Flat Leads	Stock4,256	Standard	75V	110A	4.9 mOhm @ 60A, 10V	4V @ 1mA	115nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
FDC6036P_F077	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 5A 6SSOT FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP Supplier Device Package: SuperSOT?-6	Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	Stock6,288	Logic Level Gate	20V	5A	44 mOhm @ 5A, 4.5V	1.5V @ 250µA	14nC @ 4.5V	992pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT Flat-lead, SuperSOT?-6 FLMP	SuperSOT?-6
APTC80DSK29T3G	Microsemi Corporation	MOSFET 2N-CH 800V 15A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Power - Max: 156W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock4,528	Standard	800V	15A	290 mOhm @ 7.5A, 10V	3.9V @ 1mA	90nC @ 10V	2254pF @ 25V	156W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
ZXMD63P03XTC	Diodes Incorporated	MOSFET 2P-CH 30V 8MSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power - Max: 1.04W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock30,012	Logic Level Gate	30V	-	185 mOhm @ 1.2A, 10V	1V @ 250µA (Min)	7nC @ 10V	270pF @ 25V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
APTMC60TL11CT3AG	Microsemi Corporation	MOSFET 4N-CH 1200V 28A SP3 FET Type: 4 N-Channel (Three Level Inverter) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Power - Max: 125W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock3,232	Standard	1200V (1.2kV)	28A	98 mOhm @ 20A, 20V	2.2V @ 1mA	49nC @ 20V	950pF @ 1000V	125W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
DMNH4026SSD-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V SO-8 FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,200	Standard	-	7.5A (Ta)	24 mOhm @ 6A, 10V	3V @ 250µA	8.8nC @ 4.5V	1060pF @ 20V	-	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSC750N10ND G	Infineon Technologies	MOSFET 2N-CH 100V 3.2A 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 75 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V Power - Max: 26W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8	Package: 8-PowerVDFN	Stock2,128	Standard	100V	3.2A	75 mOhm @ 13A, 10V	4V @ 12µA	11nC @ 10V	720pF @ 50V	26W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8
FDMS3604S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/23A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 23A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	Package: 8-PowerTDFN	Stock47,388	Logic Level Gate	30V	13A, 23A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1785pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
MCH6664-TL-W	ON Semiconductor	MOSFET 2P-CH 30V 1.5A SOT363 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 325 mOhm @ 800mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 82pF @ 10V Power - Max: 800mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: SC-88FL/ MCPH6	Package: 6-SMD, Flat Leads	Stock5,744	Logic Level Gate	30V	1.5A	325 mOhm @ 800mA, 10V	2.6V @ 1mA	2.2nC @ 10V	82pF @ 10V	800mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	SC-88FL/ MCPH6
SI7212DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.9A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	Package: PowerPAK? 1212-8 Dual	Stock161,460	Logic Level Gate	30V	4.9A	36 mOhm @ 6.8A, 10V	1.6V @ 250µA	11nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
AO4838	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 11A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock24,462	Logic Level Gate	30V	11A	9.6 mOhm @ 11A, 10V	2.6V @ 250µA	22nC @ 10V	1300pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
EFC3J018NUZTDG	onsemi	MOSFET 2N-CH 20V 23A 6WLCSP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.5W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Supplier Device Package: 6-WLCSP (1.77x3.05)	Package: -	Stock9,438	Logic Level Gate, 2.5V Drive	20V	23A (Ta)	4.7mOhm @ 5A, 4.5V	1.3V @ 1mA	75nC @ 4.5V	-	2.5W (Ta)	150°C (TJ)	Surface Mount	6-XFBGA, WLCSP	6-WLCSP (1.77x3.05)
SH8KC7TB1	Rohm Semiconductor	MOSFET 2N-CH 60V 10.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock5,658	-	60V	10.5A (Ta)	12.4mOhm @ 10.5A, 10V	2.5V @ 1mA	22nC @ 10V	1400pF @ 30V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
HP8MC5TB1	Rohm Semiconductor	60V 12A, DUAL NCH+PCH, HSOP8, PO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V Power - Max: 3W (Ta), 20W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	Package: -	Request a Quote	-	60V	4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc)	90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V	2.5V @ 1mA	3.1nC @ 10V, 17.3nC @ 10V	135pF @ 30V, 850pF @ 30V	3W (Ta), 20W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
FS05MR12A6MA1BBPSA1	Infineon Technologies	SIC 1200V 200A AG-HYBRIDD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-HYBRIDD-2	Package: -	Stock30	-	1200V (1.2kV)	200A	-	-	-	-	-	-	Chassis Mount	Module	AG-HYBRIDD-2
DMN52D0UDWQ-7	Diodes Incorporated	MOSFET BVDSS: 31V~40V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Request a Quote	-	50V	350mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.5nC @ 10V	42.3pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMT3020LFDBQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 7.7A 6UDFN FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: -	Request a Quote	-	30V	7.7A (Ta)	20mOhm @ 9A, 10V	2.5V @ 250µA	7nC @ 10V	393pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMN31D5UDW-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V Power - Max: 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Request a Quote	-	30V	430mA (Ta)	1.5Ohm @ 100mA, 4.5V	0.9V @ 250µA	0.3nC @ 4.5V	15.4pF @ 15V	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MTB6N60ET4	onsemi	MOSFET N-CH 600V 6A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMNH4005SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CSD86336Q3D	Texas Instruments	MOSFET 2N-CH 25V 20A 8VSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Power - Max: 6W Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	Package: -	Request a Quote	Logic Level Gate, 5V Drive	25V	20A (Ta)	9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V	1.9V @ 250µA, 1.6V @ 250µA	3.8nC @ 45V, 7.4nC @ 45V	494pF @ 12.5V, 970pF @ 12.5V	6W	-55°C ~ 125°C	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
RF1S50N06SM9AS2551	Harris Corporation	MOSFET 60V 50A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FAM65CR51XZ2	onsemi	APM16-CDB SF3 650V 51MOHM ALN L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V Power - Max: 463W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SSIP Exposed Pad, Formed Leads Supplier Device Package: APMCD-B16	Package: -	Request a Quote	-	650V	64A (Tc)	51mOhm @ 20A, 10V	5V @ 3.3mA	123nC @ 10V	4864pF @ 400V	463W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	12-SSIP Exposed Pad, Formed Leads	APMCD-B16
DMT47M2LDV-7	Diodes Incorporated	MOSFET 2N-CH 40V 11.9A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Power - Max: 2.34W (Ta), 14.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	Package: -	Request a Quote	-	40V	11.9A (Ta), 30.2A (Tc)	10.8mOhm @ 20A, 10V	2.3V @ 250µA	14nC @ 10V	891pF @ 20V	2.34W (Ta), 14.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
BUK9K13-60RAX	Nexperia USA Inc.	MOSFET 2N-CH 60V 40A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V Power - Max: 64W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: -	Stock39,840	Logic Level Gate	60V	40A (Ta)	11.2mOhm @ 10A, 10V	2.1V @ 1mA	22.4nC @ 5V	2953pF @ 25V	64W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D