Page 114 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF9956TR
Infineon Technologies

MOSFET 2N-CH 30V 3.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock105,600
FW907-TL-E
ON Semiconductor

MOSFET N/P-CH 30V 10A/8A 8SOP

Package: 8-SOIC (0.173", 4.40mm Width)

Stock6,208
SI6544BDQ-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 3.7A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock9,180
NTLUD3191PZTAG
ON Semiconductor

MOSFET 2P-CH 20V 1.1A 6UDFN

Package: 6-UFDFN Exposed Pad

Stock5,616
STS7C4F30L
STMicroelectronics

MOSFET N/P-CH 30V 7A/4A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock977,844
APTMC120AM09CT3AG
Microsemi Corporation

MOSFET 2N-CH 1200V 295A SP3F

Package: SP3

Stock7,888
TC8220K6-G
Microchip Technology

MOSFET 2N/2P-CH 200V 12VDFN

Package: 12-VFDFN Exposed Pad

Stock5,376
AO8801A
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 4.5A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock252,636
SI4804CDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock310,476
APTC60AM45BC1G
Microsemi Corporation

MOSFET 3N-CH 600V 49A SP1

Package: SP1

Stock3,488
BUK9K52-60E,115
Nexperia USA Inc.

MOSFET 2N-CH 60V 16A LFPAK56D

Package: SOT-1205, 8-LFPAK56

Stock4,560
SI4286DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 40V 7A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock91,548
DMS3017SSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 8A/6A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,616
CSD75208W1015
Texas Instruments

MOSFET 2P-CH 20V 1.6A 6WLP

Package: 6-UFBGA, DSBGA

Stock14,184
EM6K34T2CR
Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A EMT6

Package: SOT-563, SOT-666

Stock260,514
ZXMHC3F381N8TC
Diodes Incorporated

MOSFET 2N/2P-CH 30V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock225,600
DMC3400SDW-7
Diodes Incorporated

MOSFET N/P-CH 30V SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock1,109,910
DI005N06SQ2
Diotec Semiconductor

IC

Package: -

Request a Quote
SP8M21HZGTB
Rohm Semiconductor

MOSFET N/P-CH 45V 6A/4A 8SOP

Package: -

Stock5,970
SQ4282EY-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

Package: -

Stock6,255

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF9956TR	Infineon Technologies	MOSFET 2N-CH 30V 3.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock105,600	Logic Level Gate	30V	3.5A	100 mOhm @ 2.2A, 10V	1V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FW907-TL-E	ON Semiconductor	MOSFET N/P-CH 30V 10A/8A 8SOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A, 8A Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Power - Max: 2.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.173", 4.40mm Width)	Stock6,208	Logic Level Gate	30V	10A, 8A	17 mOhm @ 10A, 10V	-	17nC @ 10V	1000pF @ 10V	2.5W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
SI6544BDQ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 3.7A 8-TSSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock9,180	Logic Level Gate	30V	3.7A, 3.8A	43 mOhm @ 3.8A, 10V	3V @ 250µA	15nC @ 10V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NTLUD3191PZTAG	ON Semiconductor	MOSFET 2P-CH 20V 1.1A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-UDFN (1.6x1.6)	Package: 6-UFDFN Exposed Pad	Stock5,616	Logic Level Gate	20V	1.1A	250 mOhm @ 1.5A, 4.5V	1V @ 250µA	3.5nC @ 4.5V	160pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-UDFN (1.6x1.6)
STS7C4F30L	STMicroelectronics	MOSFET N/P-CH 30V 7A/4A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 4A Rds On (Max) @ Id, Vgs: 22 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock977,844	Logic Level Gate	30V	7A, 4A	22 mOhm @ 3.5A, 10V	2.5V @ 250µA	23nC @ 5V	1050pF @ 25V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTMC120AM09CT3AG	Microsemi Corporation	MOSFET 2N-CH 1200V 295A SP3F FET Type: 2 N Channel (Phase Leg) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 295A Rds On (Max) @ Id, Vgs: 9 mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 2.4V @ 40mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 644nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock7,888	Standard	1200V (1.2kV)	295A	9 mOhm @ 200A, 20V	2.4V @ 40mA (Typ)	644nC @ 20V	11000pF @ 1000V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
TC8220K6-G	Microchip Technology	MOSFET 2N/2P-CH 200V 12VDFN FET Type: 2 N and 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x4)	Package: 12-VFDFN Exposed Pad	Stock5,376	Standard	200V	-	6 Ohm @ 1A, 10V	2.4V @ 1mA	-	56pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	12-VFDFN Exposed Pad	12-DFN (4x4)
AO8801A	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 4.5A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock252,636	Logic Level Gate	20V	4.5A	42 mOhm @ 4.5A, 4.5V	900mV @ 250µA	11nC @ 4.5V	905pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4804CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock310,476	Standard	30V	8A	22 mOhm @ 7.5A, 10V	2.4V @ 250µA	23nC @ 10V	865pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTC60AM45BC1G	Microsemi Corporation	MOSFET 3N-CH 600V 49A SP1 FET Type: 3 N Channel (Phase Leg + Boost Chopper) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Package: SP1	Stock3,488	Standard	600V	49A	45 mOhm @ 24.5A, 10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
BUK9K52-60E,115	Nexperia USA Inc.	MOSFET 2N-CH 60V 16A LFPAK56D FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 49 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V Power - Max: 32W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: SOT-1205, 8-LFPAK56	Stock4,560	Logic Level Gate	60V	16A	49 mOhm @ 5A, 10V	2.1V @ 1mA	10nC @ 10V	725pF @ 25V	32W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
SI4286DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 7A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V Power - Max: 2.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock91,548	Standard	40V	7A	32.5 mOhm @ 8A, 10V	2.5V @ 250µA	10.5nC @ 10V	375pF @ 20V	2.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMS3017SSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 8A/6A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 6A Rds On (Max) @ Id, Vgs: 12 mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 15V Power - Max: 1.19W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,616	Logic Level Gate	30V	8A, 6A	12 mOhm @ 9.5A, 10V	2.5V @ 250µA	30.6nC @ 10V	1276pF @ 15V	1.19W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CSD75208W1015	Texas Instruments	MOSFET 2P-CH 20V 1.6A 6WLP FET Type: 2 P-Channel (Dual) Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A Rds On (Max) @ Id, Vgs: 68 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Power - Max: 750mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, DSBGA Supplier Device Package: 6-DSBGA	Package: 6-UFBGA, DSBGA	Stock14,184	Logic Level Gate	20V	1.6A	68 mOhm @ 1A, 4.5V	1.1V @ 250µA	2.5nC @ 4.5V	410pF @ 10V	750mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFBGA, DSBGA	6-DSBGA
EM6K34T2CR	Rohm Semiconductor	MOSFET 2N-CH 50V 0.2A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 0.9V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	Package: SOT-563, SOT-666	Stock260,514	Logic Level Gate, 0.9V Drive	50V	200mA	2.2 Ohm @ 200mA, 4.5V	800mV @ 1mA	-	26pF @ 10V	120mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
ZXMHC3F381N8TC	Diodes Incorporated	MOSFET 2N/2P-CH 30V 8-SOIC FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.98A, 3.36A Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V Power - Max: 870mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock225,600	Logic Level Gate	30V	3.98A, 3.36A	33 mOhm @ 5A, 10V	3V @ 250µA	9nC @ 10V	430pF @ 15V	870mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMC3400SDW-7	Diodes Incorporated	MOSFET N/P-CH 30V SOT363 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock1,109,910	Standard	30V	650mA, 450mA	400 mOhm @ 590mA, 10V	1.6V @ 250µA	1.4nC @ 10V	55pF @ 15V	310mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DI005N06SQ2	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V Power - Max: 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	-	60V	5A (Ta)	40mOhm @ 4.5A, 10V	3V @ 250µA	22nC @ 10V	1295pF @ 25V	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SP8M21HZGTB	Rohm Semiconductor	MOSFET N/P-CH 45V 6A/4A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V, 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, 2400pF @10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock5,970	-	45V	6A (Ta), 4A (Ta)	25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V	2.5V @ 1mA	21.6nC @ 5V, 28nC @ 5V	1400pF @ 10V, 2400pF @10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SQ4282EY-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2367pF @ 15V Power - Max: 3.9W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Stock6,255	-	30V	8A (Tc)	12.3mOhm @ 15A, 10V	2.5V @ 250µA	47nC @ 10V	2367pF @ 15V	3.9W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
GWS4621L	Renesas Electronics Corporation	MOSFET 2N-CH 20V 10.1A 4WLCSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1125pF @ 10V Power - Max: 3.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFLGA, CSP Supplier Device Package: 4-WLCSP (1.82x1.82)	Package: -	Request a Quote	-	20V	10.1A (Ta)	9.8mOhm @ 3A, 4.5V	1.5V @ 1mA	11nC @ 4V	1125pF @ 10V	3.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	4-XFLGA, CSP	4-WLCSP (1.82x1.82)
GSFN0205	Good-Ark Semiconductor	MOSFET 20V 5.5A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Power - Max: 1.56W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-DFN (2x3)	Package: -	Stock17,595	-	20V	5.5A (Ta)	33mOhm @ 4A, 4.5V	1V @ 250µA	25nC @ 4.5V	2100pF @ 15V	1.56W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-DFN (2x3)
DMN10H220LDV-13	Diodes Incorporated	MOSFET 2N-CH 100V PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V Power - Max: 1.8W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	Package: -	Request a Quote	-	100V	10.5A (Tc)	222mOhm @ 2A, 10V	2.5V @ 250µA	6.7nC @ 10V	366pF @ 50V	1.8W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
FDSS2407_SB82086	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMT69M9LPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 11A/44A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2212pF @ 30V Power - Max: 2.5W (Ta), 40.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	Package: -	Request a Quote	-	60V	11A (Ta), 44A (Tc)	12.5mOhm @ 20A, 10V	2V @ 250µA	33.5nC @ 10V	2212pF @ 30V	2.5W (Ta), 40.3W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
CPH5614-TL-E	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SQJ560EP-T1_GE3	Vishay Siliconix	MOSFET N/P-CH 60V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Stock41,556	-	60V	30A (Tc), 18A (Tc)	12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V, 45nC @ 10V	1650pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
TP44110HB	Tagore Technology	GANFET 2N-CH 650V 30QFN FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 118mOhm @ 500mA, 6V Vgs(th) (Max) @ Id: 2.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 400V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 30-PowerWFQFN Supplier Device Package: 30-QFN (8x10)	Package: -	Stock180	-	650V	19A (Tc)	118mOhm @ 500mA, 6V	2.5V @ 11mA	3nC @ 6V	110pF @ 400V	-	-55°C ~ 150°C (TJ)	Surface Mount	30-PowerWFQFN	30-QFN (8x10)