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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 22A/30A 8DFN
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22A, 30A
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
- Power - Max: 3.6W, 4.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN (5x6)
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Package: 8-PowerVDFN |
Stock59,196 |
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Logic Level Gate | 30V | 22A, 30A | 5.2 mOhm @ 20A, 10V | 2.2V @ 250µA | 22nC @ 10V | 1037pF @ 15V | 3.6W, 4.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DFN (5x6) |
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Vishay Siliconix |
MOSFET 2P-CH 20V 2.7A 1206-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.7A
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
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Package: 8-SMD, Flat Lead |
Stock4,256 |
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Logic Level Gate | 20V | 2.7A | 110 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 7.7nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
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Vishay Siliconix |
MOSFET 2N-CH 30V 6.6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.6A
- Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock2,416 |
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Logic Level Gate | 30V | 6.6A | 16.5 mOhm @ 8.7A, 10V | 3V @ 250µA | 20nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
MOSFET 2P-CH 80V 2A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 739pF @ 25V
- Power - Max: 2.5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock54,636 |
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Logic Level Gate | 80V | 2A | 250 mOhm @ 1A, 10V | 4V @ 250µA | 20nC @ 10V | 739pF @ 25V | 2.5W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Microsemi Corporation |
MOSFET 2N-CH 1200V 50A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 50A
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock4,496 |
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Standard | 1200V (1.2kV) | 50A | 240 mOhm @ 25A, 10V | 5V @ 6mA | 600nC @ 10V | 15200pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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TSC America Inc. |
MOSFET, DUAL, N-CHANNEL, TRENCH,
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
- Power - Max: 3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,088 |
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Standard | 30V | 5.9A (Ta) | 36 mOhm @ 5.9A, 10V | 3V @ 250µA | 13nC @ 10V | 610pF @ 15V | 3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Infineon Technologies |
MOSFET 2N-CH 20V 10A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A
- Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock689,976 |
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Logic Level Gate | 20V | 10A | 13.4 mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 4.9A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock33,600 |
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Standard | 30V | 4.9A | 50 mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 25V 8A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
- Power - Max: 2.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,085,856 |
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Logic Level Gate | 25V | 8A | 23 mOhm @ 7A, 10V | 2.2V @ 250µA | 18nC @ 10V | 680pF @ 13V | 2.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 150V
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc)
- Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V
- Power - Max: 1.9W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
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Package: 8-PowerWDFN |
Stock2,240 |
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Standard | 150V | 2.4A (Ta), 900mA (Tc) | 155 mOhm @ 2.4A, 10V | 4V @ 250µA | 6.2nC @ 10V | 395pF @ 75V | 1.9W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 30V/20V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V, 20V
- Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 9.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock512,832 |
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Logic Level Gate | 30V, 20V | 9.3A, 5.6A | 18 mOhm @ 9.3A, 10V | 3V @ 250µA | 27nC @ 4.5V | 1958pF @ 10V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2P-CH 50V 0.13A SOT-563
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 130mA
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
- Power - Max: 150mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock366,720 |
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Logic Level Gate | 50V | 130mA | 10 Ohm @ 100mA, 5V | 2V @ 1mA | - | 45pF @ 25V | 150mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 30V 8.6A/7.3A 8-SO
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.6A, 7.3A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 8.6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock562,662 |
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Logic Level Gate | 30V | 8.6A, 7.3A | 17 mOhm @ 8.6A, 10V | 3V @ 250µA | 24nC @ 10V | 1205pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 2.9A 6-MICROFET
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A
- Rds On (Max) @ Id, Vgs: 123 mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
- Power - Max: 650mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-MicroFET (2x2)
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Package: 6-VDFN Exposed Pad |
Stock1,212,000 |
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Logic Level Gate | 30V | 2.9A | 123 mOhm @ 2.9A, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 220pF @ 15V | 650mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) |
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Microchip Technology |
SIC 4N-CH 1200V/700V 472A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
- Current - Continuous Drain (Id) @ 25°C: 472A (Tc), 442A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 18mA, 2.4V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, 860nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V, 18000pF @ 700V
- Power - Max: 1.846kW (Tc), 1.161kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV), 700V | 472A (Tc), 442A (Tc) | 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V | 2.8V @ 18mA, 2.4V @ 16mA | 1392nC @ 20V, 860nC @ 20V | 18100pF @ 1000V, 18000pF @ 700V | 1.846kW (Tc), 1.161kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Micro Commercial Co |
MOSFET 2P-CH 30V 3A SOT23-6L
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
- Power - Max: 350mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6L
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Package: - |
Request a Quote |
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- | 30V | 3A | 130mOhm @ 3A, 10V | 3V @ 250µA | 4.5nC @ 4.5V | 240pF @ 25V | 350mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6L |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 12V 25A 10DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 3.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-SMD, No Lead
- Supplier Device Package: 10-AlphaDFN (3.01x1.52)
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Package: - |
Request a Quote |
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- | 12V | 25A (Ta) | 3.8mOhm @ 5A, 4.5V | 1.1V @ 250µA | 32nC @ 4.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 10-SMD, No Lead | 10-AlphaDFN (3.01x1.52) |
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Diodes Incorporated |
MOSFET 2P-CH 20V 0.36A SOT963
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 15V
- Power - Max: 380mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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Package: - |
Stock29,700 |
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- | 20V | 360mA (Ta) | 1.9Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.3nC @ 4.5V | 17pF @ 15V | 380mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 |
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onsemi |
MOSFET 2N-CH 30V 17A/56A 8PQFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 6430pF @ 15V
- Power - Max: 2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PQFN (5x6)
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Package: - |
Stock8,976 |
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- | 30V | 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc) | 5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V | 3V @ 250µA, 3V @ 1mA | 24nC @ 10V, 87nC @ 10V | 1715pF @ 15V, 6430pF @ 15V | 2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PQFN (5x6) |
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Infineon Technologies |
SIC 2N-CH 1200V 375A AG-62MM
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
- Vgs(th) (Max) @ Id: 5.15V @ 168mA
- Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-62MM
|
Package: - |
Request a Quote |
|
- | 1200V (1.2kV) | 375A (Tc) | 2.83mOhm @ 375A, 15V | 5.15V @ 168mA | 1000nC @ 15V | 29800pF @ 25V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-62MM |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V SOT563 T&R
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Renesas Electronics Corporation |
MOSFET 2N-CH 50V 0.1A SC59
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 25Ohm @ 10mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 5V
- Power - Max: 300mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-59-6
- Supplier Device Package: SC-59
|
Package: - |
Request a Quote |
|
Logic Level Gate | 50V | 100mA | 25Ohm @ 10mA, 10V | 1.8V @ 1µA | - | 16pF @ 5V | 300mW | 150°C (TJ) | Surface Mount | SC-59-6 | SC-59 |
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Good-Ark Semiconductor |
MOSFET, N+P, DUAL, 0.8 -0.4A, 20
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
- Power - Max: 312mW
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock17,958 |
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- | 20V | 800mA (Tc), 400mA (Tc) | 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V | 1V @ 250µA | 1nC @ 4.5V | 75pF @ 10V, 78pF @ 10V | 312mW | -55°C ~ 150°C | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Vishay Siliconix |
MOSFET 2N-CH 60V 7A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
- Power - Max: 4W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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- | 60V | 7A (Tc) | 40mOhm @ 4.5A, 10V | 2.5V @ 250µA | 18nC @ 10V | 750pF @ 25V | 4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
MOSFET 2N-CH 20V 0.54A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
- Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
- Power - Max: 250mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock24,000 |
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- | 20V | 540mA (Ta) | 550mOhm @ 540mA, 4.5V | 1V @ 250µA | - | 150pF @ 16V | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Diodes Incorporated |
MOSFET 4N-CH 100V 6A 12VDFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-PowerVDFN
- Supplier Device Package: V-DFN5045-12 (Type C)
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Package: - |
Request a Quote |
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- | 100V | 6A (Ta) | 33mOhm @ 6A, 10V | 2.5V @ 250µA | 11.9nC @ 10V | 683pF @ 50V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 12-PowerVDFN | V-DFN5045-12 (Type C) |
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Microchip Technology |
SIC 4N-CH 1200V 333A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
- Power - Max: 873W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 333A (Tc) | 7.8mOhm @ 80A, 20V | 2.8V @ 12mA | 928nC @ 20V | 12000pF @ 1000V | 873W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Diodes Incorporated |
MOSFET 2N-CH 30V 9.5A PWRDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
- Power - Max: 2.16W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PowerDI3333-8 (Type D)
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Package: - |
Request a Quote |
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- | 30V | 9.5A (Ta), 15A (Tc) | 14.3mOhm @ 4A, 8V | 1.2V @ 250µA | 5.7nC @ 4.5V | 600pF @ 15V | 2.16W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PowerDI3333-8 (Type D) |