Page 122 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

EFC6618R-A-TF
ON Semiconductor

MOSFET 2N-CH EFCP

Package: -

Stock7,344
AON4605_001
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 4.3A/3.4A 8DFN

Package: 8-SMD, Flat Lead

Stock3,584
EMH2407-S-TL-HX
ON Semiconductor

MOSFET 2N-CH 20V 6A EMH8

Package: 8-SMD, Flat Lead

Stock6,320
SI5513DC-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 3.1A 1206-8

Package: 8-SMD, Flat Lead

Stock4,752
SI1016X-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V SOT563F

Package: SOT-563, SOT-666

Stock1,431,360
SP8J1TB
Rohm Semiconductor

MOSFET 2P-CH 30V 5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock381,144
VMM300-03F
IXYS

MOSFET 2N-CH 300V 290A Y3-DCB

Package: Y3-DCB

Stock2,768
ALD212908SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,200
SP8K3FU6TB
Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock19,476
AON2810
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 2A 6DFN

Package: 6-WDFN Exposed Pad

Stock6,048
PMDPB80XP,115
Nexperia USA Inc.

MOSFET 2P-CH 20V 2.7A HUSON6

Package: 6-UDFN Exposed Pad

Stock7,984
SSM6L09FUTE85LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 0.4A/0.2A US6

Package: 6-TSSOP, SC-88, SOT-363

Stock3,728
NX138AKSX
Nexperia USA Inc.

NX138AKS/SC-88/REEL 7" Q1/T1 *

Package: 6-TSSOP, SC-88, SOT-363

Stock3,184
SMA5125
Sanken

MOSFET 3N/3P-CH 60V 10A 12-SIP

Package: 12-SIP, Exposed Tab

Stock22,896
FDC6327C
Fairchild/ON Semiconductor

MOSFET N/P-CH 20V SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock476,724
NTMFD016N06CT1G
onsemi

MOSFET 2N-CH 60V 9A/32A 8DFN

Package: -

Stock4,320
NTLMS4504NR2
onsemi

MOSFET N-CH 24V 28A

Package: -

Request a Quote
SQJB80EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 80V 30A PPAK SO8

Package: -

Stock8,820
FF6MR12KM1HHPSA1
Infineon Technologies

MOSFET

Package: -

Stock60
NTND31225CZTAG
onsemi

MOSFET N/P-CH 20V 0.22A 6XLLGA

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EFC6618R-A-TF	ON Semiconductor	MOSFET 2N-CH EFCP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock7,344	-	-	-	-	-	-	-	-	-	-	-	-
AON4605_001	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 4.3A/3.4A 8DFN FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (3x2)	Package: 8-SMD, Flat Lead	Stock3,584	Logic Level Gate	30V	4.3A, 3.4A	50 mOhm @ 4.3A, 10V	2.5V @ 250µA	5nC @ 10V	210pF @ 15V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (3x2)
EMH2407-S-TL-HX	ON Semiconductor	MOSFET 2N-CH 20V 6A EMH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	Package: 8-SMD, Flat Lead	Stock6,320	-	-	-	-	-	-	-	-	-	Surface Mount	8-SMD, Flat Lead	8-EMH
SI5513DC-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 3.1A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.1A Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	Package: 8-SMD, Flat Lead	Stock4,752	Logic Level Gate	20V	3.1A, 2.1A	75 mOhm @ 3.1A, 4.5V	1.5V @ 250µA	6nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SI1016X-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V SOT563F FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	Package: SOT-563, SOT-666	Stock1,431,360	Logic Level Gate	20V	485mA, 370mA	700 mOhm @ 600mA, 4.5V	1V @ 250µA	0.75nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SP8J1TB	Rohm Semiconductor	MOSFET 2P-CH 30V 5A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock381,144	Logic Level Gate	30V	5A	42 mOhm @ 5A, 10V	2.5V @ 1mA	16nC @ 5V	1400pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
VMM300-03F	IXYS	MOSFET 2N-CH 300V 290A Y3-DCB FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 290A Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 145A, 10V Vgs(th) (Max) @ Id: 4V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Power - Max: 1500W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-DCB Supplier Device Package: Y3-DCB	Package: Y3-DCB	Stock2,768	Standard	300V	290A	8.6 mOhm @ 145A, 10V	4V @ 30mA	1440nC @ 10V	40000pF @ 25V	1500W	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-DCB	Y3-DCB
ALD212908SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,200	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SP8K3FU6TB	Rohm Semiconductor	MOSFET 2N-CH 30V 7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock19,476	Logic Level Gate	30V	7A	24 mOhm @ 7A, 10V	2.5V @ 1mA	11.8nC @ 5V	600pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AON2810	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 2A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 44 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-DFN (2x2)	Package: 6-WDFN Exposed Pad	Stock6,048	Logic Level Gate	30V	2A	44 mOhm @ 2A, 10V	1.4V @ 250µA	10nC @ 10V	235pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-DFN (2x2)
PMDPB80XP,115	Nexperia USA Inc.	MOSFET 2P-CH 20V 2.7A HUSON6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 102 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power - Max: 485mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	Package: 6-UDFN Exposed Pad	Stock7,984	Logic Level Gate, 1.8V Drive	20V	2.7A	102 mOhm @ 2.7A, 4.5V	1V @ 250µA	8.6nC @ 4.5V	550pF @ 10V	485mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
SSM6L09FUTE85LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V 0.4A/0.2A US6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V Vgs(th) (Max) @ Id: 1.8V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock3,728	Logic Level Gate	30V	400mA, 200mA	700 mOhm @ 200MA, 10V	1.8V @ 100µA	-	20pF @ 5V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
NX138AKSX	Nexperia USA Inc.	NX138AKS/SC-88/REEL 7" Q1/T1 * FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V Power - Max: 325mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: 6-TSSOP, SC-88, SOT-363	Stock3,184	Standard	60V	170mA (Ta)	4.5 Ohm @ 170mA, 10V	1.5V @ 250µA	1.4nC @ 10V	20pF @ 30V	325mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
SMA5125	Sanken	MOSFET 3N/3P-CH 60V 10A 12-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 140 mOhm @ 5A, 4V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Power - Max: 4W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	Package: 12-SIP, Exposed Tab	Stock22,896	Standard	60V	10A	140 mOhm @ 5A, 4V	2V @ 250µA	-	460pF @ 10V	4W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
FDC6327C	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V SSOT-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A, 1.9A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock476,724	Logic Level Gate	20V	2.7A, 1.9A	80 mOhm @ 2.7A, 4.5V	1.5V @ 250µA	4.5nC @ 4.5V	325pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
NTMFD016N06CT1G	onsemi	MOSFET 2N-CH 60V 9A/32A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Power - Max: 3.1W (Ta), 36W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Stock4,320	-	60V	9A (Ta), 32A (Tc)	16.3mOhm @ 5A, 10V	4V @ 25µA	6.9nC @ 10V	489pF @ 30V	3.1W (Ta), 36W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTLMS4504NR2	onsemi	MOSFET N-CH 24V 28A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SQJB80EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 80V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	Package: -	Stock8,820	-	80V	30A (Tc)	19mOhm @ 8A, 10V	2.5V @ 250µA	32nC @ 10V	1400pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
FF6MR12KM1HHPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock60	-	-	-	-	-	-	-	-	-	-	-	-
NTND31225CZTAG	onsemi	MOSFET N/P-CH 20V 0.22A 6XLLGA FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), 127mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V, 12.8pF @ 15V Power - Max: 125mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFLGA Supplier Device Package: 6-XLLGA (0.9x0.65)	Package: -	Request a Quote	-	20V	220mA (Ta), 127mA (Ta)	1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V	1V @ 250µA	-	12.3pF @ 15V, 12.8pF @ 15V	125mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFLGA	6-XLLGA (0.9x0.65)
SI8902AEDB-T2-E1	Vishay Siliconix	MOSFET 2N-CH 24V 11A 6MICRO FOOT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 5.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA Supplier Device Package: 6-Micro Foot™ (1.5x1)	Package: -	Request a Quote	-	24V	11A	28mOhm @ 1A, 4.5V	900mV @ 250µA	-	-	5.7W	-55°C ~ 150°C (TJ)	Surface Mount	6-UFBGA	6-Micro Foot™ (1.5x1)
PMDXB290UNEZ	Nexperia USA Inc.	MOSFET 2N-CH 20V 0.93A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V Power - Max: 280mW (Ta), 6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	Package: -	Stock6,045	-	20V	930mA (Ta), 3.5A (Tc)	320mOhm @ 1.2A, 4.5V	1V @ 250µA	0.9nC @ 4.5V	43.6pF @ 10V	280mW (Ta), 6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
CMSBN4616-HF	Comchip Technology	MOSFET 2N-CH 8A 4CSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: CSPB1515-4	Package: -	Request a Quote	-	-	8A (Ta)	18mOhm @ 3A, 4.5V	1.3V @ 250µA	8.8nC @ 4.5V	-	1.5W (Ta)	150°C	Surface Mount	4-SMD, No Lead	CSPB1515-4
SISF06DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 28A PPAK 1212-8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V Power - Max: 5.2W (Ta), 69.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Supplier Device Package: PowerPAK® 1212-8SCD	Package: -	Stock34,188	-	30V	28A (Ta), 101A (Tc)	4.5mOhm @ 7A, 10V	2.3V @ 250µA	45nC @ 10V	2050pF @ 15V	5.2W (Ta), 69.4W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SCD	PowerPAK® 1212-8SCD
SH8JC5TB1	Rohm Semiconductor	MOSFET 2P-CH 60V 7.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 30V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock20,205	-	60V	7.5A (Ta)	32mOhm @ 7.5A, 10V	2.5V @ 1mA	50nC @ 10V	2630pF @ 30V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
BSM250D17P2E004	Rohm Semiconductor	SIC 2N-CH 1700V 250A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 66mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V Power - Max: 1800W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: -	Stock102	-	1700V (1.7kV)	250A (Tc)	-	4V @ 66mA	-	30000pF @ 10V	1800W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
FS45MR12W1M1B11BOMA1	Infineon Technologies	SIC 6N-CH 1200V AG-EASY1BM-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ) Vgs(th) (Max) @ Id: 5.55V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1BM-2	Package: -	Stock318	-	1200V (1.2kV)	25A (Tj)	45mOhm @ 25A, 15V (Typ)	5.55V @ 10mA	62nC @ 15V	1840pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1BM-2
DMN3013LDG-7	Diodes Incorporated	MOSFET 2N-CH 30V 9.5A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 2.16W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	Package: -	Request a Quote	-	30V	9.5A (Ta), 15A (Tc)	14.3mOhm @ 4A, 8V	1.2V @ 250µA	5.7nC @ 4.5V	600pF @ 15V	2.16W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)