Page 139 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

AUIRF7341Q
Infineon Technologies

MOSFET 2N-CH 55V 5.1A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,872
ECH8662-TL-H
ON Semiconductor

MOSFET 2N-CH 40V 6.5A ECH8

Package: 8-SMD, Flat Lead

Stock4,096
FDW2502P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 4.4A 8-TSSO

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock237,648
APTC60HM70T3G
Microsemi Corporation

MOSFET 4N-CH 600V 39A SP3

Package: SP3

Stock5,520
APTM50DHM65T3G
Microsemi Corporation

MOSFET 2N-CH 500V 51A SP3

Package: SP3

Stock7,664
DMN1029UFDB-13
Diodes Incorporated

MOSFET 2N-CH 12V 5.6A 6UDFN

Package: 6-UDFN Exposed Pad

Stock2,848
NTMD6N02R2G
ON Semiconductor

MOSFET 2N-CH 20V 3.92A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock534,024
ZXMD63C03XTA
Diodes Incorporated

MOSFET N/P-CH 30V 8-MSOP

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock1,954,092
ZXMN3A04DN8TA
Diodes Incorporated

MOSFET 2N-CH 30V 6.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock64,968
DMN2023UCB4-7
Diodes Incorporated

MOSFET 2N-CH X1-WLB1818-4

Package: 4-XFBGA, WLBGA

Stock6,528
ZXMP6A16DN8TA
Diodes Incorporated

MOSFET 2P-CH 60V 2.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock512,964
FDMB2307NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 6-MLP

Package: 6-WDFN Exposed Pad

Stock158,748
DMN2016LFG-7
Diodes Incorporated

MOSFET 2N-CH 20V 5.2A 8UDFN

Package: 8-PowerUDFN

Stock25,908
SSM6N58NU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

Package: 6-WDFN Exposed Pad

Stock180,000
MSCSM120AM02T6LIAG
Microchip Technology

SIC 2N-CH 1200V 947A

Package: -

Request a Quote
APTMC120HRM40CT3AG
Microchip Technology

SIC 2N-CH 1200V 73A SP3

Package: -

Request a Quote
MSCSM170TAM23CTPAG
Microchip Technology

SIC 6N-CH 1700V 122A

Package: -

Stock15
HP8JE5TB1
Rohm Semiconductor

-100V 12.5A, DUAL PCH+PCH, HSOP8

Package: -

Request a Quote
MSCSM120AM03T6LIAG
Microchip Technology

SIC 2N-CH 1200V 805A

Package: -

Request a Quote
TSM2537CQ
Taiwan Semiconductor Corporation

MOSFET N/P-CH 20V 11.6A/9A 6TDFN

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AUIRF7341Q	Infineon Technologies	MOSFET 2N-CH 55V 5.1A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,872	Logic Level Gate	55V	5.1A	50 mOhm @ 5.1A, 10V	3V @ 250µA	44nC @ 10V	780pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ECH8662-TL-H	ON Semiconductor	MOSFET 2N-CH 40V 6.5A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 30 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 20V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	Package: 8-SMD, Flat Lead	Stock4,096	Logic Level Gate	40V	6.5A	30 mOhm @ 3.5A, 4.5V	-	12nC @ 4.5V	1130pF @ 20V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
FDW2502P	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 4.4A 8-TSSO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock237,648	Logic Level Gate	20V	4.4A	35 mOhm @ 4.4A, 4.5V	1.5V @ 250µA	21nC @ 5V	1465pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTC60HM70T3G	Microsemi Corporation	MOSFET 4N-CH 600V 39A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock5,520	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM50DHM65T3G	Microsemi Corporation	MOSFET 2N-CH 500V 51A SP3 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock7,664	Standard	500V	51A	78 mOhm @ 42A, 10V	5V @ 2.5mA	340nC @ 10V	10800pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
DMN1029UFDB-13	Diodes Incorporated	MOSFET 2N-CH 12V 5.6A 6UDFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: 6-UDFN Exposed Pad	Stock2,848	Standard	12V	5.6A	29 mOhm @ 5A, 4.5V	1V @ 250µA	19.6nC @ 8V	914pF @ 6V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
NTMD6N02R2G	ON Semiconductor	MOSFET 2N-CH 20V 3.92A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.92A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V Power - Max: 730mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock534,024	Logic Level Gate	20V	3.92A	35 mOhm @ 6A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1100pF @ 16V	730mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ZXMD63C03XTA	Diodes Incorporated	MOSFET N/P-CH 30V 8-MSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 1.04W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock1,954,092	Logic Level Gate	30V	-	135 mOhm @ 1.7A, 10V	1V @ 250µA (Min)	8nC @ 10V	290pF @ 25V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
ZXMN3A04DN8TA	Diodes Incorporated	MOSFET 2N-CH 30V 6.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 20 mOhm @ 12.6A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V Power - Max: 1.81W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock64,968	Logic Level Gate	30V	6.5A	20 mOhm @ 12.6A, 10V	1V @ 250µA (Min)	36.8nC @ 10V	1890pF @ 15V	1.81W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN2023UCB4-7	Diodes Incorporated	MOSFET 2N-CH X1-WLB1818-4 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.45W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLBGA Supplier Device Package: X1-WLB1818-4	Package: 4-XFBGA, WLBGA	Stock6,528	Logic Level Gate	-	-	-	-	29nC @ 4.5V	-	1.45W	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA, WLBGA	X1-WLB1818-4
ZXMP6A16DN8TA	Diodes Incorporated	MOSFET 2P-CH 60V 2.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V Power - Max: 1.81W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock512,964	Logic Level Gate	60V	2.9A	85 mOhm @ 2.9A, 10V	1V @ 250µA (Min)	24.2nC @ 10V	1021pF @ 30V	1.81W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDMB2307NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 6-MLP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-MLP (2x3)	Package: 6-WDFN Exposed Pad	Stock158,748	Logic Level Gate	-	-	-	-	28nC @ 5V	-	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-MLP (2x3)
DMN2016LFG-7	Diodes Incorporated	MOSFET 2N-CH 20V 5.2A 8UDFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1472pF @ 10V Power - Max: 770mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8	Package: 8-PowerUDFN	Stock25,908	Logic Level Gate	20V	5.2A	18 mOhm @ 6A, 4.5V	1.1V @ 250µA	16nC @ 4.5V	1472pF @ 10V	770mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerUDFN	U-DFN3030-8
SSM6N58NU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A UDFN6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	Package: 6-WDFN Exposed Pad	Stock180,000	Logic Level Gate, 1.8V Drive	30V	4A	84 mOhm @ 2A, 4.5V	1V @ 1mA	1.8nC @ 4.5V	129pF @ 15V	1W	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-UDFN (2x2)
MSCSM120AM02T6LIAG	Microchip Technology	SIC 2N-CH 1200V 947A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Vgs(th) (Max) @ Id: 2.8V @ 36mA Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V Power - Max: 3.75kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	947A (Tc)	2.6mOhm @ 480A, 20V	2.8V @ 36mA	2784nC @ 20V	36200pF @ 1000V	3.75kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
APTMC120HRM40CT3AG	Microchip Technology	SIC 2N-CH 1200V 73A SP3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 3V @ 12.5mA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V Power - Max: 375W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3	Package: -	Request a Quote	-	1200V (1.2kV)	73A (Tc)	34mOhm @ 50A, 20V	3V @ 12.5mA	161nC @ 5V	2788pF @ 1000V	375W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP3
MSCSM170TAM23CTPAG	Microchip Technology	SIC 6N-CH 1700V 122A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 122A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Power - Max: 588W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock15	-	1700V (1.7kV)	122A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	6600pF @ 1000V	588W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
HP8JE5TB1	Rohm Semiconductor	-100V 12.5A, DUAL PCH+PCH, HSOP8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V Power - Max: 3W (Ta), 21W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	Package: -	Request a Quote	-	100V	4.5A (Ta), 12.5A (Tc)	127mOhm @ 4.5A, 10V	2.5V @ 1mA	38nC @ 10V	1370pF @ 50V	3W (Ta), 21W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
MSCSM120AM03T6LIAG	Microchip Technology	SIC 2N-CH 1200V 805A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 805A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V Vgs(th) (Max) @ Id: 2.8V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V Power - Max: 3.215kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	805A (Tc)	3.1mOhm @ 400A, 20V	2.8V @ 30mA	2320nC @ 20V	30200pF @ 1000V	3.215kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
TSM2537CQ	Taiwan Semiconductor Corporation	MOSFET N/P-CH 20V 11.6A/9A 6TDFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V Power - Max: 6.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-TDFN (2x2)	Package: -	Request a Quote	Logic Level Gate, 1.8V Drive	20V	11.6A (Tc), 9A (Tc)	30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V	1V @ 250µA	9.1nC @ 4.5V, 9.8nC @ 4.5V	677pF @ 10V, 744pF @ 10V	6.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-TDFN (2x2)
FDSS2407S_B82086	Fairchild Semiconductor	MOSFET 2N-CH 62V 3.3A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 62V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Power - Max: 2.27W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	Logic Level Gate	62V	3.3A (Ta)	110mOhm @ 3.3A, 10V	3V @ 250µA	4.3nC @ 5V	300pF @ 15V	2.27W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TSM4953DCS	Taiwan Semiconductor Corporation	MOSFET 2P-CH 30V 4.9A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	-	30V	4.9A (Ta)	60mOhm @ 4.9A, 10V	3V @ 250µA	28nC @ 10V	745pF @ 15V	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMTH10H038SPDWQ-13	Diodes Incorporated	MOSFET 2N-CH 100V 25A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V Power - Max: 2.7W (Ta), 39W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	Package: -	Request a Quote	-	100V	25A (Tc)	33mOhm @ 10A, 10V	4V @ 250µA	8nC @ 10V	544pF @ 50V	2.7W (Ta), 39W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
PSMN6R1-40HLX	Nexperia USA Inc.	MOSFET 2N-CH 40V 40A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Power - Max: 64W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: -	Stock4,788	Logic Level Gate	40V	40A (Ta)	6.1mOhm @ 10A, 10V	2.1V @ 1mA	22.2nC @ 5V	3000pF @ 25V	64W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
PJT7600_R1_00001	Panjit International Inc.	MOSFET N/P-CH 20V 1A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock41,052	-	20V	1A (Ta), 700mA (Ta)	150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V	1V @ 250µA	1.6nC @ 4.5V, 2.2nC @ 4.5V	92pF @ 10V, 151pF @ 10V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
KFC6B21B70L	Nuvoton Technology Corporation	DUAL NCH MOSFET 12V, 9.0A, 4.6MO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFLGA, CSP Supplier Device Package: 6-CSP (1.24x1.89)	Package: -	Request a Quote	-	12V	9A (Ta)	5.5mOhm @ 4.5A, 4.5V	1.4V @ 260µA	15nC @ 4V	1810pF @ 10V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFLGA, CSP	6-CSP (1.24x1.89)
UT6JC5TCR	Rohm Semiconductor	MOSFET 2P-CH 60V 2.5A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	Package: -	Stock7,023	-	60V	2.5A (Ta)	280mOhm @ 2.5A, 10V	2.5V @ 1mA	6.3nC @ 10V	265pF @ 30V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
SQ3989EV-T1_BE3	Vishay Siliconix	MOSFET 2P-CH 30V 2.5A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.67W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: -	Stock27,000	-	30V	2.5A (Tc)	155mOhm @ 400mA, 10V	1.5V @ 250µA	11.1nC @ 10V	-	1.67W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP