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Renesas Electronics America |
MOSFET 2N/2P-CH 30V 3.5A 8-SOP
- FET Type: 2 N and 2 P-Channel (H-Bridge)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
- Power - Max: 2.2W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,192 |
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Logic Level Gate, 4V Drive | 30V | 3.5A | 65 mOhm @ 2A, 10V | - | 5nC @ 10V | 290pF @ 10V | 2.2W | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 30V 2A 6TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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Package: SC-74, SOT-457 |
Stock120,012 |
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Logic Level Gate | 30V | 2A | 110 mOhm @ 2A, 10V | 1.5V @ 250µA | 12nC @ 10V | 305pF @ 15V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
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Vishay Siliconix |
MOSFET 2P-CH 20V 3A 1206-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
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Package: 8-SMD, Flat Lead |
Stock36,000 |
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Logic Level Gate | 20V | 3A | 86 mOhm @ 3A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
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Vishay Siliconix |
MOSFET N/P-CH 20V 1.13A SC70-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 570mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6 (SOT-363)
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock36,120 |
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Logic Level Gate | 20V | 1.13A, 880mA | 280 mOhm @ 1.13A, 4.5V | 1V @ 100µA | 1nC @ 4.5V | - | 570mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) |
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Vishay Siliconix |
MOSFET N/P-CH 20V 1.13A SC70-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 570mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6 (SOT-363)
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock259,200 |
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Logic Level Gate | 20V | 1.13A, 880mA | 280 mOhm @ 1.13A, 4.5V | 1V @ 100µA | 2nC @ 4.5V | - | 570mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 25V 0.14A SC70-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 140mA
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 140mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock450,276 |
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Logic Level Gate | 25V | 140mA | 10 Ohm @ 140mA, 4.5V | 1.5V @ 250µA | 0.31nC @ 4.5V | 12pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 16A POWERPAIR
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
- Power - Max: 29W, 66W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair?
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Package: 8-PowerWDFN |
Stock137,400 |
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Logic Level Gate | 30V | 16A | 12 mOhm @ 13.8A, 10V | 2.2V @ 250µA | 21nC @ 10V | 790pF @ 15V | 29W, 66W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-PowerPair? |
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Vishay Siliconix |
MOSFET ARRAY 2N-CH 100V SO8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V
- Power - Max: 48W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric
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Package: PowerPAK? SO-8 Dual |
Stock7,200 |
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Standard | 100V | 34A (Tc) | 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V | 2.5V @ 250µA | 30nC @ 10V, 15nC @ 10V | 1390pF @ 25V, 650pF @ 25V | 48W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual Asymmetric |
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EPC |
MOSFET ARRAY 2N-CH 30V DIE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Tj), 38A (Tj)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 15V, 15nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V, 1700pF @ 15V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock51,732 |
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GaNFET (Gallium Nitride) | 30V | 9.5A (Tj), 38A (Tj) | 8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 3.5nC @ 15V, 15nC @ 15V | 380pF @ 15V, 1700pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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ON Semiconductor |
MOSFET 2N-CH 30V 1.8A SOT363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.8A
- Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
- Power - Max: 800mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: SC-88FL/ MCPH6
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Package: 6-SMD, Flat Leads |
Stock21,666 |
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Logic Level Gate, 4V Drive | 30V | 1.8A | 188 mOhm @ 900mA, 10V | 2.6V @ 1mA | 2nC @ 10V | 88pF @ 10V | 800mW | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SC-88FL/ MCPH6 |
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Central Semiconductor Corp |
MOSFET 2N-CH 50V 0.28A SOT563
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 280mA
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock26,004 |
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Standard | 50V | 280mA | 1.5 Ohm @ 50mA, 5V | 1.2V @ 250µA | 0.76nC @ 4.5V | 50pF @ 25V | 350mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 80V 2.1A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 2.1A
- Rds On (Max) @ Id, Vgs: 183 mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock21,516 |
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Logic Level Gate | 80V | 2.1A | 183 mOhm @ 2.1A, 10V | 3V @ 250µA | 19nC @ 10V | 879pF @ 40V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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onsemi |
NCH+NCH 4V DRIVE SERIES
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild Semiconductor |
MOSFET N-CH 55V 20A
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 0.1A US6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
- Power - Max: 200mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock43,383 |
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- | 30V | 100mA (Ta) | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 8.5pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Infineon Technologies |
SIC 4N-CH 1200V 25A AG-EASY1B
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1B-2 |
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Renesas |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
MOSFET
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
- Power - Max: 50W (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PDFN5060-8D
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Package: - |
Request a Quote |
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- | 100V | 20A (Tc) | 22mOhm @ 20A, 10V | 2.5V @ 250µA | 17nC @ 10V | 1240pF @ 25V | 50W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PDFN5060-8D |
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Infineon Technologies |
SIC 1200V AG-EASY1B
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B
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Package: - |
Stock72 |
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- | 1200V (1.2kV) | - | - | - | - | - | - | - | Chassis Mount | Module | AG-EASY1B |
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Fairchild Semiconductor |
MOSFET 2N-CH 30V 6A US8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 25V
- Power - Max: 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
- Supplier Device Package: US8
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Package: - |
Request a Quote |
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Logic Level Gate | 30V | 6A (Ta) | 32mOhm @ 6A, 10V | 3V @ 250µA | 19.2nC @ 10V | 605pF @ 25V | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VFSOP (0.091", 2.30mm Width) | US8 |
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Wolfspeed, Inc. |
SIC 1200V 110A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 110A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 110A | - | - | - | - | - | - | Chassis Mount | Module | - |
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Good-Ark Semiconductor |
MOSFET 2P-CH 20V 0.4A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
- Power - Max: 312mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock18,000 |
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- | 20V | 400mA (Tc) | 600mOhm @ 300mA, 4.5V | 1V @ 250µA | 2nC @ 4.5V | 78pF @ 10V | 312mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Infineon Technologies |
SIC 2N-CH 1200V 145A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 145A (Tj)
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 150A, 18V
- Vgs(th) (Max) @ Id: 5.15V @ 60mA
- Gate Charge (Qg) (Max) @ Vgs: 446nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Stock87 |
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- | 1200V (1.2kV) | 145A (Tj) | 5.4mOhm @ 150A, 18V | 5.15V @ 60mA | 446nC @ 18V | 13200pF @ 800V | - | -40°C ~ 175°C (TJ) | Chassis Mount | Module | Module |
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SemiQ |
SIC 1200V 20M MOSFET FULL-BRIDGE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V
- Power - Max: 333W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock30 |
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- | 1200V (1.2kV) | 102A (Tc) | 28mOhm @ 50A, 20V | 4V @ 20mA | 222nC @ 20V | 5600pF @ 800V | 333W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Vishay Siliconix |
MOSFET N/P-CH 30V 0.7A SC70-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
- Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V
- Power - Max: 290mW (Ta), 340mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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Package: - |
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- | 30V | 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) | 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V | 2.5V @ 250µA | 1.5nC @ 10V, 3nC @ 10V | 28pF @ 15V, 34pF @ 15V | 290mW (Ta), 340mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
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Diodes Incorporated |
MOSFET N/P-CH 100V 1.7A 8SO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V, 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V, 1030pF @ 50V
- Power - Max: 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: - |
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- | 100V | 1.7A (Ta) | 220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V | 3V @ 250µA | 8.3nC @ 10V, 17.5nC @ 10V | 340pF @ 50V, 1030pF @ 50V | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Renesas Electronics Corporation |
MOSFET 2P-CH 50V 0.1A SC59
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V
- Power - Max: 300mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-59-6
- Supplier Device Package: SC-59
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- | 50V | 100mA | 60Ohm @ 10mA, 10V | 2.5V @ 1µA | - | 17pF @ 5V | 300mW | 150°C (TJ) | Surface Mount | SC-59-6 | SC-59 |
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Panjit International Inc. |
MOSFET 2N-CH 20V 0.8A 6DFN
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
- Power - Max: 400mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN
- Supplier Device Package: DFN1010-6L
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- | 20V | 800mA (Ta) | 300mOhm @ 500mA, 4.5V | 1V @ 250µA | 1.1nC @ 4.5V | 46pF @ 10V | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN | DFN1010-6L |