Page 147 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF6723M2DTRPBF
Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

Package: DirectFET? Isometric MA

Stock45,684
IRF7504TR
Infineon Technologies

MOSFET 2P-CH 20V 1.7A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock19,296
APTC60DSKM70T3G
Microsemi Corporation

MOSFET 2N-CH 600V 39A SP3

Package: SP3

Stock2,816
SI3850ADV-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 1.4A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock379,080
SI1970DH-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 1.3A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock5,536
FDG6322C_D87Z
Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock4,672
FDS6982
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock506,724
NTMD2C02R2
ON Semiconductor

MOSFET N/P-CH 20V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,296
AON6812
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 27A 8-DFN

Package: 8-SMD, Flat Lead Exposed Pad

Stock4,288
DMP2060UFDB-13
Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

Package: 6-UDFN Exposed Pad

Stock6,496
DMP2100UFU-13
Diodes Incorporated

MOSFET 2P-CH 20V U-DFN2030-6

Package: 6-UFDFN Exposed Pad

Stock7,248
ALD110900ASAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,224
BSM080D12P2C008
Rohm Semiconductor

SIC POWER MODULE-1200V-80A

Package: Module

Stock7,440
DMC1017UPD-13
Diodes Incorporated

MOSFET N/P-CH 12V 9.5A/6.9A SMD

Package: 8-PowerTDFN

Stock60,000
IPG20N04S4L08ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

Package: 8-PowerVDFN

Stock49,350
MMBT7002KDW-AQ
Diotec Semiconductor

MOSFET SOT363 N+N 60V 3OHM 150C

Package: -

Request a Quote
MSCSM120HM16CTBL3NG
Microchip Technology

SIC 4N-CH 1200V 150A

Package: -

Request a Quote
SP8M5FRATB
Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A 8SOP

Package: -

Stock30
DMN52D0UVQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

Package: -

Request a Quote
HP8MA2TB1
Rohm Semiconductor

MOSFET N/P-CH 30V 18A/15A 8HSOP

Package: -

Stock6,912

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF6723M2DTRPBF	Infineon Technologies	MOSFET 2N-CH 30V 15A DIRECTFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V Power - Max: 2.7W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET? Isometric MA Supplier Device Package: DIRECTFET? MA	Package: DirectFET? Isometric MA	Stock45,684	Logic Level Gate	30V	15A	6.6 mOhm @ 15A, 10V	2.35V @ 25µA	14nC @ 4.5V	1380pF @ 15V	2.7W	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET? Isometric MA	DIRECTFET? MA
IRF7504TR	Infineon Technologies	MOSFET 2P-CH 20V 1.7A MICRO8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock19,296	Logic Level Gate	20V	1.7A	270 mOhm @ 1.2A, 4.5V	700mV @ 250µA	8.2nC @ 4.5V	240pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
APTC60DSKM70T3G	Microsemi Corporation	MOSFET 2N-CH 600V 39A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock2,816	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SI3850ADV-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 1.4A 6TSOP FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.08W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock379,080	Logic Level Gate	20V	1.4A, 960mA	300 mOhm @ 500mA, 4.5V	1.5V @ 250µA	1.4nC @ 4.5V	-	1.08W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI1970DH-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 1.3A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock5,536	Logic Level Gate	30V	1.3A	225 mOhm @ 1.2A, 4.5V	1.6V @ 250µA	3.8nC @ 10V	95pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
FDG6322C_D87Z	Fairchild/ON Semiconductor	MOSFET N/P-CH 25V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: 6-TSSOP, SC-88, SOT-363	Stock4,672	Logic Level Gate	25V	220mA, 410mA	4 Ohm @ 220mA, 4.5V	1.5V @ 250µA	0.4nC @ 4.5V	9.5pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
FDS6982	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock506,724	Logic Level Gate	30V	6.3A, 8.6A	28 mOhm @ 6.3A, 10V	3V @ 250µA	12nC @ 5V	760pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTMD2C02R2	ON Semiconductor	MOSFET N/P-CH 20V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A, 3.4A Rds On (Max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,296	Logic Level Gate	20V	5.2A, 3.4A	43 mOhm @ 4A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1100pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AON6812	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 27A 8-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V Power - Max: 4.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Exposed Pad Supplier Device Package: 8-DFN-EP (5.2x5.55)	Package: 8-SMD, Flat Lead Exposed Pad	Stock4,288	Logic Level Gate	30V	27A	4 mOhm @ 20A, 10V	2.2V @ 250µA	34nC @ 10V	1720pF @ 15V	4.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead Exposed Pad	8-DFN-EP (5.2x5.55)
DMP2060UFDB-13	Diodes Incorporated	MOSFET 2P-CH 20V 3.2A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: 6-UDFN Exposed Pad	Stock6,496	Standard	20V	3.2A	90 mOhm @ 2.9A, 4.5V	1.4V @ 250µA	18nC @ 8V	881pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMP2100UFU-13	Diodes Incorporated	MOSFET 2P-CH 20V U-DFN2030-6 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6	Package: 6-UFDFN Exposed Pad	Stock7,248	Standard	20V	5.7A	38 mOhm @ 3.5A, 10V	1.4V @ 250µA	21.4nC @ 10V	906pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6
ALD110900ASAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V Vgs(th) (Max) @ Id: 10mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,224	Standard	10.6V	-	500 Ohm @ 4V	10mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
BSM080D12P2C008	Rohm Semiconductor	SIC POWER MODULE-1200V-80A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 80A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 13.2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Power - Max: 600W Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: Module	Stock7,440	Standard	1200V (1.2kV)	80A	-	4V @ 13.2mA	-	800pF @ 10V	600W	175°C (TJ)	Chassis Mount	Module	Module
DMC1017UPD-13	Diodes Incorporated	MOSFET N/P-CH 12V 9.5A/6.9A SMD FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1787pF @ 6V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	Package: 8-PowerTDFN	Stock60,000	Standard	12V	9.5A, 6.9A	17 mOhm @ 11.8A, 4.5V	1.5V @ 250µA	35.4nC @ 10V	1787pF @ 6V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
IPG20N04S4L08ATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 22µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Power - Max: 54W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	Package: 8-PowerVDFN	Stock49,350	Logic Level Gate	40V	20A	8.2 mOhm @ 17A, 10V	2.2V @ 22µA	39nC @ 10V	3050pF @ 25V	54W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
MMBT7002KDW-AQ	Diotec Semiconductor	MOSFET SOT363 N+N 60V 3OHM 150C FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 440pC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 25V Power - Max: 295mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Request a Quote	Logic Level Gate	60V	300mA	3Ohm @ 500mA, 10V	1.75V @ 250µA	440pC @ 4.5V	21pF @ 25V	295mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	SOT-363
MSCSM120HM16CTBL3NG	Microchip Technology	SIC 4N-CH 1200V 150A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 560W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	150A	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	560W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
SP8M5FRATB	Rohm Semiconductor	MOSFET N/P-CH 30V 6A/7A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock30	-	30V	6A (Ta), 7A (Ta)	30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V	2.5V @ 1mA	7.2nC @ 5V, 25nC @ 5V	520pF @ 10V, 2600pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN52D0UVQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V Power - Max: 480mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	50V	480mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.5nC @ 10V	39pF @ 25V	480mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
HP8MA2TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 18A/15A 8HSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V Power - Max: 3W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	Package: -	Stock6,912	-	30V	18A (Ta), 15A (Ta)	9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V	2.5V @ 1mA	22nC @ 10V, 25nC @ 10V	1100pF @ 15V, 1250pF @ 15V	3W (Ta)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
AOC3862	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XDFN Supplier Device Package: 6-DFN (3.55x1.77)	Package: -	Request a Quote	-	-	-	-	1.25V @ 250µA	46nC @ 4.5V	-	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-XDFN	6-DFN (3.55x1.77)
RJK0216DPA-00-J53	Renesas Electronics Corporation	MOSFET 2N-CH 25V 15A/32A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 32A Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 10V Power - Max: 10W, 20W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WFDFN Supplier Device Package: 8-DFN (5x6)	Package: -	Request a Quote	Logic Level Gate, 4.5V Drive	25V	15A, 32A	9.2mOhm @ 7.5A, 10V	-	6.2nC @ 4.5V	1130pF @ 10V	10W, 20W	150°C (TJ)	Surface Mount	8-WFDFN	8-DFN (5x6)
FDWS9520L-F085	onsemi	MOSFET 2P-CH 40V 60.8A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60.8A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 20V Power - Max: 75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PQFN (5x6)	Package: -	Request a Quote	-	40V	60.8A (Tc)	12.5mOhm @ 20A, 10V	3V @ 250µA	33nC @ 10V	2370pF @ 20V	75W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-PQFN (5x6)
CMLDM7002AJ-TR-PBFREE	Central Semiconductor Corp	MOSFET 2N-CH 60V 0.28A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Stock15,855	-	60V	280mA	2Ohm @ 500mA, 10V	2.5V @ 250µA	0.59nC @ 4.5V	50pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NVMFD5C462NWFT1G	onsemi	MOSFET 40V S08FL DUAL FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
MSCM20XM10T3XG	Microchip Technology	MOSFET 6N-CH 200V 108A SP3X FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 50V Power - Max: 341W (Tc) Operating Temperature: -40°C ~ 125°C (Tc) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3X	Package: -	Stock33	-	200V	108A (Tc)	9.7mOhm @ 81A, 10V	5V @ 250µA	161nC @ 10V	10700pF @ 50V	341W (Tc)	-40°C ~ 125°C (Tc)	Chassis Mount	Module	SP3X
DMN2022UDH-13	Diodes Incorporated	MOSFET BVDSS: 8V 24V V-DFN3030-8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SQ4937EY-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 30V 5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Power - Max: 3.3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Stock1,005	-	30V	5A (Tc)	75mOhm @ 3.9A, 10V	2.5V @ 250µA	15nC @ 10V	480pF @ 25V	3.3W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC