Page 144 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

AOD607_DELTA
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V TO252-4

Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

Stock6,576
GWM100-01X1-SL
IXYS

MOSFET 6N-CH 100V 90A ISOPLUS

Package: 17-SMD, Flat Leads

Stock6,560
APTM20TDUM16PG
Microsemi Corporation

MOSFET 6N-CH 200V 104A SP6-P

Package: SP6

Stock4,608
SI1023X-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 0.37A SOT563F

Package: SOT-563, SOT-666

Stock1,215,624
SSD2025TF
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 3.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock378,300
PMGD370XN,115
Nexperia USA Inc.

MOSFET 2N-CH 30V 0.74A 6TSSOP

Package: 6-TSSOP, SC-88, SOT-363

Stock116,400
PHKD3NQ10T,518
Nexperia USA Inc.

MOSFET 2N-CH 100V 3A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,312
EFC6602R-A-TR
ON Semiconductor

MOSFET 2N-CH EFCP

Package: 6-XFBGA

Stock5,440
CSD87313DMST
Texas Instruments

MOSFET ARRAY 2N-CH 30V 8WSON

Package: 8-PowerWDFN

Stock6,400
SQ1912EH-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 20V SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock6,480
ALD111933PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

Package: 8-DIP (0.300", 7.62mm)

Stock6,108
SI6968BEDQ-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 5.2A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock246,168
SP8J2TB
Rohm Semiconductor

MOSFET 2P-CH 30V 4.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock19,044
DMN3015LSD-13
Diodes Incorporated

MOSFET 2N-CH 30V 8.4A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,480
SI4946BEY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 6.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock582,864
DMG6968UDM-7
Diodes Incorporated

MOSFET 2N-CH 20V 6.5A SOT-26

Package: SOT-23-6

Stock360,012
KGF16N05D-400W
Renesas Electronics Corporation

MOSFET 2N-CH 5.5V 16A 20WLCSP

Package: -

Request a Quote
MCH6631-TL-E-SY
Sanyo

MOSFET N/P-CH

Package: -

Request a Quote
NTTFD9D0N06HLTWG
onsemi

MOSFET 2N-CH 60V 9A/38A 12WQFN

Package: -

Stock8,547
EFC2K112NUZTDG
onsemi

MOSFET N-CH 12V 32A WLCSP DUAL

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AOD607_DELTA	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V TO252-4 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V, 37 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V Power - Max: 25W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock6,576	Standard	30V	12A (Tc)	25 mOhm @ 12A, 10V, 37 mOhm @ 12A, 10V	2.5V @ 250µA, 2.4V @ 250µA	12.5nC @ 4.5V, 11.7nC @ 4.5V	1250pF @ 15V, 1100pF @ 15V	25W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
GWM100-01X1-SL	IXYS	MOSFET 6N-CH 100V 90A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	Package: 17-SMD, Flat Leads	Stock6,560	Standard	100V	90A	8.5 mOhm @ 80A, 10V	4.5V @ 250µA	90nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
APTM20TDUM16PG	Microsemi Corporation	MOSFET 6N-CH 200V 104A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	Package: SP6	Stock4,608	Standard	200V	104A	19 mOhm @ 52A, 10V	5V @ 2.5mA	140nC @ 10V	7220pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
SI1023X-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 0.37A SOT563F FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 370mA Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	Package: SOT-563, SOT-666	Stock1,215,624	Logic Level Gate	20V	370mA	1.2 Ohm @ 350mA, 4.5V	450mV @ 250µA (Min)	1.5nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SSD2025TF	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 3.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock378,300	Logic Level Gate	60V	3.3A	100 mOhm @ 3.3A, 10V	1V @ 250µA	30nC @ 10V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
PMGD370XN,115	Nexperia USA Inc.	MOSFET 2N-CH 30V 0.74A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 740mA Rds On (Max) @ Id, Vgs: 440 mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V Power - Max: 410mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: 6-TSSOP, SC-88, SOT-363	Stock116,400	Logic Level Gate	30V	740mA	440 mOhm @ 200mA, 4.5V	1.5V @ 250µA	0.65nC @ 4.5V	37pF @ 25V	410mW	-55°C ~ 175°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PHKD3NQ10T,518	Nexperia USA Inc.	MOSFET 2N-CH 100V 3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 20V Power - Max: 2W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,312	Logic Level Gate	100V	3A	90 mOhm @ 1.5A, 10V	4V @ 1mA	21nC @ 10V	633pF @ 20V	2W	-65°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
EFC6602R-A-TR	ON Semiconductor	MOSFET 2N-CH EFCP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA Supplier Device Package: 6-EFCP (2.7x1.81)	Package: 6-XFBGA	Stock5,440	Logic Level Gate, 2.5V Drive	-	-	-	-	55nC @ 4.5V	-	2W	150°C (TJ)	Surface Mount	6-XFBGA	6-EFCP (2.7x1.81)
CSD87313DMST	Texas Instruments	MOSFET ARRAY 2N-CH 30V 8WSON FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 15V Power - Max: 2.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WSON (3.3x3.3)	Package: 8-PowerWDFN	Stock6,400	Standard	30V	-	-	1.2V @ 250µA	28nC @ 4.5V	4290pF @ 15V	2.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-WSON (3.3x3.3)
SQ1912EH-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 20V SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: 6-TSSOP, SC-88, SOT-363	Stock6,480	Standard	20V	800mA (Tc)	280 mOhm @ 1.2A, 4.5V	1.5V @ 250µA	1.15nC @ 4.5V	75pF @ 10V	1.5W	-55°C ~ 175°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
ALD111933PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.9V Vgs(th) (Max) @ Id: 3.35V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	Package: 8-DIP (0.300", 7.62mm)	Stock6,108	Standard	10.6V	-	500 Ohm @ 5.9V	3.35V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
SI6968BEDQ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 5.2A 8TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock246,168	Logic Level Gate	20V	5.2A	22 mOhm @ 6.5A, 4.5V	1.6V @ 250µA	18nC @ 4.5V	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SP8J2TB	Rohm Semiconductor	MOSFET 2P-CH 30V 4.5A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock19,044	Logic Level Gate	30V	4.5A	56 mOhm @ 4.5A, 10V	2.5V @ 1mA	8.5nC @ 5V	850pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN3015LSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 8.4A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,480	Standard	30V	8.4A (Ta)	15 mOhm @ 12A, 10V	2.5V @ 250µA	25.1nC @ 10V	1415pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4946BEY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 60V 6.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V Power - Max: 3.7W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock582,864	Logic Level Gate	60V	6.5A	41 mOhm @ 5.3A, 10V	3V @ 250µA	25nC @ 10V	840pF @ 30V	3.7W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMG6968UDM-7	Diodes Incorporated	MOSFET 2N-CH 20V 6.5A SOT-26 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 850mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	Package: SOT-23-6	Stock360,012	Logic Level Gate	20V	6.5A	24 mOhm @ 6.5A, 4.5V	900mV @ 250µA	8.8nC @ 4.5V	143pF @ 10V	850mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
KGF16N05D-400W	Renesas Electronics Corporation	MOSFET 2N-CH 5.5V 16A 20WLCSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 5.5V Current - Continuous Drain (Id) @ 25°C: 16A (Tj) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-UFLGA, CSP Supplier Device Package: 20-WLCSP (2.48x1.17)	Package: -	Request a Quote	-	5.5V	16A (Tj)	1.9mOhm @ 8A, 4.5V	900mV @ 250µA	5.5nC @ 4.5V	600pF @ 5V	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	20-UFLGA, CSP	20-WLCSP (2.48x1.17)
MCH6631-TL-E-SY	Sanyo	MOSFET N/P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NTTFD9D0N06HLTWG	onsemi	MOSFET 2N-CH 60V 9A/38A 12WQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V Power - Max: 1.7W (Ta), 26W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWQFN Supplier Device Package: 12-WQFN (3.3x3.3)	Package: -	Stock8,547	-	60V	9A (Ta), 38A (Tc)	9mOhm @ 10A, 10V	2V @ 50µA	13.5nC @ 10V	948pF @ 30V	1.7W (Ta), 26W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWQFN	12-WQFN (3.3x3.3)
EFC2K112NUZTDG	onsemi	MOSFET N-CH 12V 32A WLCSP DUAL FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BSS8402DWQ-13	Diodes Incorporated	MOSFET N/P-CH 60V/50V SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), 130mA (Ta) Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V Power - Max: 200mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock29,940	-	60V, 50V	115mA (Ta), 130mA (Ta)	13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V	2.5V @ 250µA, 2V @ 1mA	-	50pF @ 25V, 45pF @ 25V	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMC2053UFDB-13	Diodes Incorporated	MOSFET N/P-CH 20V 4.6A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Power - Max: 820mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: -	Request a Quote	-	20V	4.6A (Ta), 3.1A (Ta)	35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V	1V @ 250µA	7.7nC @ 10V, 12.7nC @ 8V	369pF @ 10V, 440pF @ 10V	820mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SCH2806-TL-E	onsemi	NCH+SBD 1.8V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BSO150N03MDGXUMA1	Infineon Technologies	MOSFET 2N-CH 30V 8A 8DSO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	Package: -	Stock87,285	Logic Level Gate	30V	8A	15mOhm @ 9.3A, 10V	2V @ 250µA	17nC @ 10V	1300pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
G450N10D52	Goford Semiconductor	MOSFET 100V 35A 8DFN FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2196pF @ 50V Power - Max: 80W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (4.9x5.75)	Package: -	Stock14,700	-	100V	35A (Tc)	45mOhm @ 10A, 10V	2.5V @ 250µA	26nC @ 10V	2196pF @ 50V	80W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (4.9x5.75)
MCB60P1200TLB-TRR	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	Package: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
DMG1023UVQ-13	Diodes Incorporated	MOSFET 2P-CH 20V 1.03A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V Power - Max: 530mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	20V	1.03A (Ta)	750mOhm @ 430mA, 4.5V	1V @ 250µA	0.622nC @ 4.5V	59pF @ 16V	530mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
MSCSM170AM23CT1AG	Microchip Technology	SIC 2N-CH 1700V 124A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Power - Max: 602W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1700V (1.7kV)	124A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	6600pF @ 1000V	602W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-