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ON Semiconductor |
MOSFET 2N-CH 30V 7A ECH8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-ECH
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Package: 8-SMD, Flat Lead |
Stock25,476 |
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Logic Level Gate, 4V Drive | 30V | 7A | 24 mOhm @ 3.5A, 10V | - | 11.8nC @ 10V | 710pF @ 10V | 1.5W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
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ON Semiconductor |
MOSFET 2N-CH 60V 3A VEC8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-VEC
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Package: 8-SMD, Flat Lead |
Stock4,464 |
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Logic Level Gate | 60V | 3A | 80 mOhm @ 1.5A, 10V | 2.6V @ 1mA | 10nC @ 10V | 505pF @ 20V | 1W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-VEC |
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Vishay Siliconix |
MOSFET 2P-CH 12V 4.5A SC70-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
- Power - Max: 6.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-70-6 Dual
- Supplier Device Package: PowerPAK? SC-70-6 Dual
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Package: PowerPAK? SC-70-6 Dual |
Stock32,400 |
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Standard | 12V | 4.5A | 70 mOhm @ 3.3A, 4.5V | 1V @ 250µA | 12nC @ 8V | 400pF @ 6V | 6.5W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
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Vishay Siliconix |
MOSFET 2P-CH 20V 2.7A 1206-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.7A
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
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Package: 8-SMD, Flat Lead |
Stock5,265,276 |
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Logic Level Gate | 20V | 2.7A | 110 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 7.7nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
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Vishay Siliconix |
MOSFET N/P-CH 20V 2.9A 6TSOP
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock544,848 |
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Logic Level Gate | 20V | 2.9A, 2.1A | 60 mOhm @ 3.4A, 4.5V | 1.1V @ 250µA | 6nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Microsemi Corporation |
MOSFET 2N-CH 1000V 78A SP6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 78A
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock2,688 |
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Standard | 1000V (1kV) | 78A | 105 mOhm @ 39A, 10V | 5V @ 10mA | 744nC @ 10V | 20700pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET 2N-CH 1000V 22A SP3
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 22A
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock5,488 |
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Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI333
- FET Type: 2 N-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8
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Package: 8-PowerVDFN |
Stock2,624 |
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Standard | - | 21A (Tc) | 12 mOhm @ 7A, 10V | 2V @ 250µA | 9.5nC @ 4.5V | 1184pF @ 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 |
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Nexperia USA Inc. |
MOSFET 2N-CH 30V 0.18A 6TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 180mA
- Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Power - Max: 375mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,496 |
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Logic Level Gate | 30V | 180mA | 4.5 Ohm @ 100mA, 10V | 1.5V @ 250µA | 0.44nC @ 4.5V | 13pF @ 10V | 375mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Vishay Siliconix |
MOSFET 2P-CH 60V 2.4A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.4A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock61,188 |
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Logic Level Gate | 60V | 2.4A | 120 mOhm @ 3.1A, 10V | 3V @ 250µA | 22nC @ 10V | - | 1.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 8A/12A POWER33
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A, 12A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
- Power - Max: 700mW, 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
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Package: 8-PowerWDFN |
Stock121,020 |
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Logic Level Gate | 30V | 8A, 12A | 20 mOhm @ 6A, 10V | 3V @ 250µA | 10nC @ 10V | 660pF @ 15V | 700mW, 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) |
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Diodes Incorporated |
MOSFET 2N-CHA 12V 2A DFN1310
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
- Power - Max: 390mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,752 |
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Standard | 12V | 2A | 150 mOhm @ 1A, 4.5V | 1V @ 250µA | 1.4nC @ 4.5V | 115pF @ 6V | 390mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 12V 6.5A 8TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6.5A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock22,980 |
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Logic Level Gate | 12V | 6.5A | 20 mOhm @ 6.5A, 4.5V | 850mV @ 250µA | 23nC @ 4.5V | 2100pF @ 6V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 4A 2-2Y1A
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-UDFN (2x2)
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Package: 6-WDFN Exposed Pad |
Stock26,646 |
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Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFN (2x2) |
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Vishay Siliconix |
MOSFET 2N-CH 40V 8A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
- Power - Max: 3.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock74,268 |
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Standard | 40V | 8A | 16 mOhm @ 5A, 10V | 2V @ 250µA | 85nC @ 10V | 2390pF @ 20V | 3.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 100V 11.3A PPAK SO8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
- Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
- Power - Max: 27W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
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Package: - |
Stock7,674 |
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- | 100V | 11.3A (Tc) | 95mOhm @ 4A, 10V | 3.5V @ 250µA | 7nC @ 10V | 220pF @ 25V | 27W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
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Nuvoton Technology Corporation |
MOSFET 20V 2.9A 4CSP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 1.45A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V
- Power - Max: 420mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFLGA, CSP
- Supplier Device Package: 4-CSP (1.1x1.1)
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Package: - |
Request a Quote |
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- | 20V | 2.9A (Ta) | 45mOhm @ 1.45A, 4.5V | 1.4V @ 100µA | 4.5nC @ 4V | 440pF @ 10V | 420mW (Ta) | 150°C | Surface Mount | 4-XFLGA, CSP | 4-CSP (1.1x1.1) |
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Diotec Semiconductor |
MOSFET SOT363 N+N 60V 3OHM 150C
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 300mA
- Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 440pC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 25V
- Power - Max: 295mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Request a Quote |
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Logic Level Gate | 60V | 300mA | 3Ohm @ 500mA, 10V | 1.75V @ 250µA | 440pC @ 4.5V | 21pF @ 25V | 295mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | SOT-363 |
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onsemi |
MOSFET 2N-CH 40V 24A/127A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc)
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
- Power - Max: 3.2W (Ta), 89W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Package: - |
Request a Quote |
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- | 40V | 24A (Ta), 127A (Tc) | 2.9mOhm @ 30A, 10V | 3.5V @ 250µA | 38nC @ 10V | 2450pF @ 25V | 3.2W (Ta), 89W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Rohm Semiconductor |
MOSFET 2N-CH 40V 6A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock7,134 |
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- | 40V | 6A (Ta) | 38mOhm @ 6A, 10V | 2.5V @ 1mA | 2.9nC @ 5V | 280pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V TSOT26 T&R
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V
- Power - Max: 590mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: - |
Request a Quote |
|
- | 20V | 2.6A (Ta) | 90mOhm @ 3.6A, 4.5V | 1.4V @ 250µA | 7.4nC @ 10V | 278pF @ 10V | 590mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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Microchip Technology |
SIC 2N-CH 1200V 420A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 200A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 1160nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 1000V
- Power - Max: 1.753kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | 1200V (1.2kV) | 420A (Tc) | 6.2mOhm @ 200A, 20V | 2.8V @ 15mA | 1160nC @ 20V | 15100pF @ 1000V | 1.753kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Renesas Electronics Corporation |
MOSFET 2N-CH 30V 4.5A 8VSOF
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V
- Power - Max: 2.2W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-VSOF
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Package: - |
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Logic Level Gate | 30V | 4.5A | 55mOhm @ 2A, 4.5V | 1.5V @ 1mA | 5.4nC @ 4.5V | 475pF @ 10V | 2.2W | - | Surface Mount | 8-SMD, Flat Lead | 8-VSOF |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 8SOP
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Taiwan Semiconductor Corporation |
MOSFET 2P-CH 20V 4.7A 6TDFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 0.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
- Power - Max: 620mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-TDFN (2x2)
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Package: - |
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- | 20V | 4.7A (Tc) | 50mOhm @ 3A, 4.5V | 0.8V @ 250µA | 13nC @ 4.5V | 1230pF @ 10V | 620mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-TDFN (2x2) |
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Diodes Incorporated |
MOSFET N/P-CH 20V 1.1A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
- Power - Max: 460mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
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- | 20V | 1.1A (Ta), 800mA (Ta) | 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V | 1V @ 250µA | 0.6nC @ 4.5V, 0.7nC @ 4.5V | 42pF @ 16V, 49pF @ 16V | 460mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Micro Commercial Co |
MOSFET 2P-CH 20V 30A DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2992pF @ 10V
- Power - Max: 21W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: DFN3333-D
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Package: - |
Stock29,760 |
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- | 20V | 30A (Ta) | 19mOhm @ 15A, 4.5V | 1V @ 250µA | 72.8nC @ 10V | 2992pF @ 10V | 21W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | DFN3333-D |
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Rohm Semiconductor |
MOSFET 2P-CH 9A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
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- | - | 9A (Ta) | 18.5mOhm @ 9A, 10V | 2.5V @ 1mA | - | - | - | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |