Page 156 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

SI4816DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock147,948
SI6969DQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock72,000
MP6K31TR
Rohm Semiconductor

MOSFET 2N-CH 60V 2A MPT6

Package: 6-SMD, Flat Leads

Stock7,808
CSD75205W1015
Texas Instruments

MOSFET 2P-CH 20V 1.2A 6DSBGA

Package: 6-UFBGA, DSBGA

Stock17,808
TPC8207(TE12L,Q)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

Package: 8-SOIC (0.173", 4.40mm Width)

Stock2,704
MMDF2N02ER2
ON Semiconductor

MOSFET 2N-CH 25V 3.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock884,412
IRF7316PBF
Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,696
ALD110808PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

Package: 16-DIP (0.300", 7.62mm)

Stock6,880
DMN63D8LDW-13
Diodes Incorporated

MOSFET 2N-CH 30V 0.22A SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock6,384
CSD87334Q3DT
Texas Instruments

MOSFET 2N-CH 30V 20A 8SON

Package: 8-PowerTDFN

Stock5,600
SI7540DP-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 12V 7.6A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock4,432
CSD87352Q5D
Texas Instruments

MOSFET 2N-CH 30V 25A 8SON

Package: 8-PowerLDFN

Stock29,172
SIZ300DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 11A POWERPAIR

Package: 8-PowerWDFN

Stock15,360
ALD111933SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock13,740
FDMS3602AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 15A/26A POWER56

Package: 8-PowerTDFN

Stock48,240
SI9933CDY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 4A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock62,304
TT8J13TCR
Rohm Semiconductor

MOSFET 2P-CH 12V 2.5A TSST8

Package: 8-SMD, Flat Lead

Stock4,672
SI7998DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 25A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock6,108
BUK9K134-100EX
Nexperia USA Inc.

MOSFET 2N-CH 100V 8.5A 56LFPAK

Package: SOT-1205, 8-LFPAK56

Stock25,836
PHC2300,118
Nexperia USA Inc.

MOSFET N/P-CH 300V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock15,012

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI4816DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 5.3A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W, 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock147,948	Logic Level Gate	30V	5.3A, 7.7A	22 mOhm @ 6.3A, 10V	2V @ 250µA	12nC @ 5V	-	1W, 1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI6969DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock72,000	Logic Level Gate	12V	-	34 mOhm @ 4.6A, 4.5V	450mV @ 250µA (Min)	40nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MP6K31TR	Rohm Semiconductor	MOSFET 2N-CH 60V 2A MPT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: MPT6	Package: 6-SMD, Flat Leads	Stock7,808	Logic Level Gate	60V	2A	290 mOhm @ 2A, 10V	2.5V @ 1mA	2nC @ 5V	110pF @ 10V	2W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	MPT6
CSD75205W1015	Texas Instruments	MOSFET 2P-CH 20V 1.2A 6DSBGA FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V Power - Max: 750mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, DSBGA Supplier Device Package: 6-DSBGA (1x1.5)	Package: 6-UFBGA, DSBGA	Stock17,808	Logic Level Gate	20V	1.2A	120 mOhm @ 1A, 4.5V	850mV @ 250µA	2.2nC @ 4.5V	265pF @ 10V	750mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFBGA, DSBGA	6-DSBGA (1x1.5)
TPC8207(TE12L,Q)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 6A 8-SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	Package: 8-SOIC (0.173", 4.40mm Width)	Stock2,704	Logic Level Gate	20V	6A	20 mOhm @ 4.8A, 4V	1.2V @ 200µA	22nC @ 5V	2010pF @ 10V	450mW	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP (5.5x6.0)
MMDF2N02ER2	ON Semiconductor	MOSFET 2N-CH 25V 3.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock884,412	Logic Level Gate	25V	3.6A	100 mOhm @ 2.2A, 10V	3V @ 250µA	30nC @ 10V	532pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IRF7316PBF	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,696	Logic Level Gate	30V	4.9A	58 mOhm @ 4.9A, 10V	1V @ 250µA	34nC @ 10V	710pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ALD110808PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V Vgs(th) (Max) @ Id: 820mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	Package: 16-DIP (0.300", 7.62mm)	Stock6,880	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.8V	820mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
DMN63D8LDW-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.22A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock6,384	Logic Level Gate	30V	220mA	2.8 Ohm @ 250mA, 10V	1.5V @ 250µA	870nC @ 10V	22pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
CSD87334Q3DT	Texas Instruments	MOSFET 2N-CH 30V 20A 8SON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	Package: 8-PowerTDFN	Stock5,600	Standard	30V	-	6 mOhm @ 12A, 8V	1.2V @ 250µA	8.3nC @ 4.5V	1260pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
SI7540DP-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 12V 7.6A PPAK SO-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock4,432	Logic Level Gate	12V	7.6A, 5.7A	17 mOhm @ 11.8A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
CSD87352Q5D	Texas Instruments	MOSFET 2N-CH 30V 25A 8SON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V Power - Max: 8.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	Package: 8-PowerLDFN	Stock29,172	Logic Level Gate	30V	25A	-	1.15V @ 250µA	12.5nC @ 4.5V	1800pF @ 15V	8.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (5x6)
SIZ300DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 11A POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A, 28A Rds On (Max) @ Id, Vgs: 24 mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 16.7W, 31W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair?	Package: 8-PowerWDFN	Stock15,360	Logic Level Gate	30V	11A, 28A	24 mOhm @ 9.8A, 10V	2.4V @ 250µA	12nC @ 10V	400pF @ 15V	16.7W, 31W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair?
ALD111933SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.9V Vgs(th) (Max) @ Id: 3.35V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock13,740	Standard	10.6V	-	500 Ohm @ 5.9V	3.35V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDMS3602AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 15A/26A POWER56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 26A Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V Power - Max: 2.2W, 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	Package: 8-PowerTDFN	Stock48,240	Logic Level Gate	25V	15A, 26A	5.6 mOhm @ 15A, 10V	3V @ 250µA	27nC @ 10V	1770pF @ 13V	2.2W, 2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
SI9933CDY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V Power - Max: 3.1W Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock62,304	Logic Level Gate	20V	4A	58 mOhm @ 4.8A, 4.5V	1.4V @ 250µA	26nC @ 10V	665pF @ 10V	3.1W	-50°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
TT8J13TCR	Rohm Semiconductor	MOSFET 2P-CH 12V 2.5A TSST8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 6V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	Package: 8-SMD, Flat Lead	Stock4,672	Logic Level Gate, 1.5V Drive	12V	2.5A	62 mOhm @ 2.5A, 4.5V	1V @ 1mA	16nC @ 4.5V	2000pF @ 6V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
SI7998DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 25A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A, 30A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Power - Max: 22W, 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock6,108	Logic Level Gate	30V	25A, 30A	9.3 mOhm @ 15A, 10V	2.5V @ 250µA	26nC @ 10V	1100pF @ 15V	22W, 40W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
BUK9K134-100EX	Nexperia USA Inc.	MOSFET 2N-CH 100V 8.5A 56LFPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.5A Rds On (Max) @ Id, Vgs: 159 mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Power - Max: 32W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: SOT-1205, 8-LFPAK56	Stock25,836	Logic Level Gate	100V	8.5A	159 mOhm @ 5A, 5V	2.1V @ 1mA	7.4nC @ 5V	755pF @ 25V	32W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
PHC2300,118	Nexperia USA Inc.	MOSFET N/P-CH 300V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 340mA, 235mA Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 102pF @ 50V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock15,012	Logic Level Gate	300V	340mA, 235mA	6 Ohm @ 170mA, 10V	2V @ 1mA	6.24nC @ 10V	102pF @ 50V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IPG20N04S4L18AATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V Power - Max: 26W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	Package: -	Stock14,310	-	40V	20A (Tc)	18mOhm @ 17A, 10V	2.2V @ 8µA	15nC @ 10V	1071pF @ 25V	26W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PG-TDSON-8-10
SH8KA4TB1	Rohm Semiconductor	MOSFET 2N-CH 30V 9A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock7,245	-	30V	9A (Ta)	21.4mOhm @ 9A, 10V	2.5V @ 1mA	15.5nC @ 10V	640pF @ 15V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDD8424H-F085A	onsemi	MOSFET N/P-CH 40V 9A/6.5A TO252 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252 (DPAK)	Package: -	Request a Quote	Logic Level Gate	40V	9A, 6.5A	24mOhm @ 9A, 10V	3V @ 250µA	20nC @ 10V	1000pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPAK (4 Leads + Tab), TO-252AD	TO-252 (DPAK)
NVMJD7D4N04CLTWG	onsemi	MOSFET N-CH 40V LFPAK56 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SIZ346DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 17A/30A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V Power - Max: 16W, 16.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	Package: -	Stock11,772	-	30V	17A (Tc), 30A (Tc)	28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V	2.2V @ 250µA, 2.4V @ 250µA	5nC @ 4.5V, 9nC @ 4.5V	325pF @ 15V, 650pF @ 15V	16W, 16.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
ECH8654-TL-HX	onsemi	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BUK9MHH-65PNN-518	Nexperia USA Inc.	MOSFET 2N-CH 65V 15A 20SO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V Power - Max: 5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	Package: -	Request a Quote	Logic Level Gate	65V	15A (Tc)	10.6mOhm @ 10A, 10V	2V @ 1mA	44.6nC @ 5V	3643pF @ 25V	5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	20-SOIC (0.295", 7.50mm Width)	20-SO
FDS8958A-F085	onsemi	MOSFET N/P-CH 30V 7A/5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5A Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	Logic Level Gate	30V	7A, 5A	28mOhm @ 7A, 10V	3V @ 250µA	16nC @ 10V	575pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC