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Infineon Technologies |
MOSFET 2P-CH 20V 4.7A 8-TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.7A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock32,964 |
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Logic Level Gate | 20V | 4.7A | 30 mOhm @ 4.7A, 4.5V | 1.2V @ 250µA | 39nC @ 5V | 1700pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 30V 8A/7A 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A, 7A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,528 |
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Logic Level Gate | 30V | 8A, 7A | 20 mOhm @ 8A, 10V | 2.4V @ 250µA | 18nC @ 10V | 888pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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ON Semiconductor |
MOSFET N/P-CH 20V SOT-563
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock6,208 |
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Logic Level Gate | 20V | 540mA, 430mA | 550 mOhm @ 540mA, 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | 72pF @ 16V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 5.7A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.7A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,639,416 |
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Logic Level Gate | 30V | 5.7A | 22 mOhm @ 7.5A, 10V | 3V @ 250µA | 11nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 100V 1.6A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.6A
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock467,544 |
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Logic Level Gate | 100V | 1.6A | 250 mOhm @ 3.2A, 10V | 2V @ 250µA (Min) | 7.7nC @ 10V | 405pF @ 50V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Diodes Incorporated |
MOSFET 2N-CH 60V 1A SOT-223-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1A
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
- Power - Max: 2.75W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SOT-223
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Package: SOT-223-8 |
Stock6,432 |
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Logic Level Gate | 60V | 1A | 1 Ohm @ 1.5A, 10V | 3V @ 1mA | - | 100pF @ 25V | 2.75W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SOT-223 |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 5A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,888 |
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Logic Level Gate | 20V | 5A | 55 mOhm @ 3.2A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | 825pF @ 10V | 900mW | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 5A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock591,000 |
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Logic Level Gate | 30V | 5A | 51 mOhm @ 5A, 10V | 2.5V @ 1mA | 5.5nC @ 5V | 230pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 7A/4.5A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A, 4.5A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock16,392 |
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Logic Level Gate | 30V | 7A, 4.5A | 25 mOhm @ 7A, 10V | 2.5V @ 1mA | 8.4nC @ 5V | 600pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Infineon Technologies |
MOSFET 2N-CH 60V 0.3A SOT363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 300mA
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock7,888 |
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Logic Level Gate | 60V | 300mA | 3 Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 10V | 20pF @ 25V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Diodes Incorporated |
MOSFET N/P-CH 40V 7A/5.1A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,840 |
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Logic Level Gate | 40V | 7A, 5.1A | 24 mOhm @ 6A, 10V | 2.4V @ 250µA | 19.1nC @ 10V | 1060pF @ 20V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 7A/13A POWER33
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A, 13A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
- Power - Max: 700mW, 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
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Package: 8-PowerWDFN |
Stock103,104 |
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Logic Level Gate | 30V | 7A, 13A | 22 mOhm @ 6A, 10V | 3V @ 250µA | 10nC @ 10V | 660pF @ 15V | 700mW, 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-Power33 (3x3) |
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Central Semiconductor Corp |
MOSFET 2N-CH 30V 5.8A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,584 |
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Standard | 30V | 5.8A | 30 mOhm @ 2.9A, 10V | 3V @ 250µA | 6.3nC @ 5V | 560pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
MOSFET 2N-CH 12V 52A 6PICOSTAR
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFBGA
- Supplier Device Package: 6-PicoStar
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Package: 6-XFBGA |
Stock3,392 |
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Standard | - | - | - | - | 10.9nC @ 4.5V | - | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFBGA | 6-PicoStar |
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Diodes Incorporated |
MOSFET 2P-CH 20V 2A SOT-26
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 16V
- Power - Max: 600mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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Package: SOT-23-6 |
Stock508,260 |
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Logic Level Gate | 20V | 2A | 150 mOhm @ 2A, 4.5V | 1V @ 250µA | - | 320pF @ 16V | 600mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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Vishay Siliconix |
MOSFET 2N-CH 60V 5.3A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock519,168 |
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Logic Level Gate | 60V | 5.3A | 58 mOhm @ 4.3A, 10V | 3V @ 250µA | 20nC @ 10V | 665pF @ 15V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
SIC 2N-CH 1200V 25A AG-EASY1B
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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Package: - |
Stock72 |
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- | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1B-2 |
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Rohm Semiconductor |
MOSFET 2P-CH 30V 8SOP
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET 2P-CH 20V 5.3A PWRDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 13.6A (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 8.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V
- Power - Max: 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXB)
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Package: - |
Request a Quote |
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- | 20V | 5.3A (Ta), 13.6A (Tc) | 36mOhm @ 8.9A, 4.5V | 1.5V @ 250µA | 20nC @ 10V | 834pF @ 10V | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 (Type UXB) |
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Micro Commercial Co |
MOSFET
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
- Power - Max: 35W (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PDFN5060-8D
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Package: - |
Request a Quote |
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- | 40V | 30A (Tc) | 15mOhm @ 20A, 10V | 2.5V @ 250µA | 23nC @ 10V | 1030pF @ 25V | 35W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PDFN5060-8D |
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Rohm Semiconductor |
MOSFET N/P-CH 100V 3A/8.5A 8HSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)
- Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, 19.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, 590pF @ 50V
- Power - Max: 3W (Ta), 20W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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Package: - |
Stock3,549 |
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- | 100V | 3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc) | 193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V | 2.5V @ 1mA | 2.9nC @ 10V, 19.7nC @ 10V | 90pF @ 50V, 590pF @ 50V | 3W (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-HSOP |
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Nexperia USA Inc. |
MOSFET 2N-CH 40V 98A LFPAK56D
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 98A (Ta)
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V
- Power - Max: 85W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: - |
Stock15,705 |
|
- | 40V | 98A (Ta) | 4.2mOhm @ 20A, 10V | 3.6V @ 1mA | 37nC @ 10V | 2590pF @ 25V | 85W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Diodes Incorporated |
MOSFET 2N-CH 40V 10.2A PWRDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
- Power - Max: 1.16W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXD)
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Package: - |
Request a Quote |
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- | 40V | 10.2A (Ta), 27.5A (Tc) | 15mOhm @ 20A, 10V | 3V @ 250µA | 11.2nC @ 10V | 750pF @ 20V | 1.16W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 (Type UXD) |
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Microchip Technology |
SIC 2N-CH 700V 689A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 24mA
- Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
- Power - Max: 1882W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 700V | 689A (Tc) | 3.2mOhm @ 240A, 20V | 2.4V @ 24mA | 1290nC @ 20V | 27000pF @ 700V | 1882W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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Microchip Technology |
SIC 6N-CH 1200V 74A SP3
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
- Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 4V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
- Power - Max: 375W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 74A (Tc) | 34mOhm @ 50A, 20V | 4V @ 15mA | 161nC @ 5V | 2788pF @ 1000V | 375W | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3 |
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onsemi |
MOSFET 2N-CH 60V 9A/32A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
- Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
- Power - Max: 3.1W (Ta), 36W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Package: - |
Request a Quote |
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- | 60V | 9A (Ta), 32A (Tc) | 16.3mOhm @ 5A, 10V | 4V @ 25µA | 6.9nC @ 10V | 489pF @ 30V | 3.1W (Ta), 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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IXYS |
MOSFET 2N-CH 1000V Y3-LI
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Y3-Li
- Supplier Device Package: Y3-Li
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Package: - |
Request a Quote |
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- | 1000V (1kV) | - | - | - | - | - | - | - | Chassis Mount | Y3-Li | Y3-Li |
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Wolfspeed, Inc. |
SIC 2N-CH 1700V 986A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 986A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 55700pF @ 0V
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Stock3 |
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- | 1700V (1.7kV) | 986A (Tc) | - | - | - | 55700pF @ 0V | - | -40°C ~ 175°C (TJ) | Chassis Mount | Module | Module |