Page 163 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF7910PBF
Infineon Technologies

MOSFET 2N-CH 12V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,128
AO8801L
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 4.7 8TSSOP

Package: -

Stock6,848
SI6924AEDQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 28V 4.1A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock5,664
NTUD3127CT5G
ON Semiconductor

MOSFET N/P-CH 20V SOT-963

Package: SOT-963

Stock181,152
VMM1000-01P
IXYS

MOSFET 2N-CH 100V 1000A Y3-LI

Package: Y3-Li

Stock6,576
HAT2092R-EL-E
Renesas Electronics America

MOSFET 2N-CH 30V 11A 8-SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,367,508
STC6NF30V
STMicroelectronics

MOSFET 2N-CH 30V 6A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock29,856
IPG20N06S4L11ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

Package: 8-PowerVDFN

Stock7,744
FMM75-01F
IXYS

MOSFET 2N-CH 100V 75A I4-PAC-5

Package: i4-Pac?-5

Stock7,920
ALD210804SCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Package: 16-SOIC (0.154", 3.90mm Width)

Stock4,960
ALD111933MAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8MSOP

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock5,440
DMG1026UVQ-7
Diodes Incorporated

MOSFET BVDSS: 41V 60V SOT563 T&R

Package: SOT-563, SOT-666

Stock3,856
FF11MR12W1M1B11BOMA1
Infineon Technologies Industrial Power and Controls Americas

MOSFET MODULE HALF 1200V 100A

Package: Module

Stock3,504
US6M11TR
Rohm Semiconductor

MOSFET N/P-CH 20V/12V TUMT6

Package: 6-TSSOP, SC-88, SOT-363

Stock5,200
DN2625DK6-G
Microchip Technology

MOSFET 2N-CH 250V 1.1A 8VDFN

Package: 8-VDFN Exposed Pad

Stock17,076
ALD1116SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock16,416
FDS8928A
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V/20V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock618,024
SIA906EDJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6

Package: PowerPAK? SC-70-6 Dual

Stock484,956
NX6020CAKSAX
Nexperia USA Inc.

MOSFET N/P-CH 60V 0.17A 6TSSOP

Package: -

Request a Quote
PJS6801_S1_00001
Panjit International Inc.

MOSFET 2P-CH 30V 3.2A SOT23-6

Package: -

Stock2,052

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7910PBF	Infineon Technologies	MOSFET 2N-CH 12V 10A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,128	Logic Level Gate	12V	10A	15 mOhm @ 8A, 4.5V	2V @ 250µA	26nC @ 4.5V	1730pF @ 6V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO8801L	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 4.7 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 8-TSSOP	Package: -	Stock6,848	Standard	20V	4.7A (Ta)	42 mOhm @ 4.7A, 4.5V	1V @ 250µA	17.2nC @ 10V	1450pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	-	8-TSSOP
SI6924AEDQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 28V 4.1A 8-TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock5,664	Logic Level Gate	28V	4.1A	33 mOhm @ 4.6A, 4.5V	1.5V @ 250µA	10nC @ 4.5V	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NTUD3127CT5G	ON Semiconductor	MOSFET N/P-CH 20V SOT-963 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V Power - Max: 125mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	Package: SOT-963	Stock181,152	Logic Level Gate	20V	160mA, 140mA	3 Ohm @ 100mA, 4.5V	1V @ 250µA	-	9pF @ 15V	125mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
VMM1000-01P	IXYS	MOSFET 2N-CH 100V 1000A Y3-LI FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1000A Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 800A, 10V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 2355nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-Li Supplier Device Package: Y3-Li	Package: Y3-Li	Stock6,576	Standard	100V	1000A	1.2 Ohm @ 800A, 10V	4V @ 10mA	2355nC @ 10V	-	-	-40°C ~ 175°C (TJ)	Chassis Mount	Y3-Li	Y3-Li
HAT2092R-EL-E	Renesas Electronics America	MOSFET 2N-CH 30V 11A 8-SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 16 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,367,508	Logic Level Gate	30V	11A	16 mOhm @ 5.5A, 10V	2.5V @ 1mA	22nC @ 10V	1400pF @ 10V	3W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
STC6NF30V	STMicroelectronics	MOSFET 2N-CH 30V 6A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock29,856	Logic Level Gate	30V	6A	25 mOhm @ 3A, 4.5V	600mV @ 250µA	9nC @ 2.5V	800pF @ 25V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IPG20N06S4L11ATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 28µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	Package: 8-PowerVDFN	Stock7,744	Logic Level Gate	60V	20A	11.2 mOhm @ 17A, 10V	2.2V @ 28µA	53nC @ 10V	4020pF @ 25V	65W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
FMM75-01F	IXYS	MOSFET 2N-CH 100V 75A I4-PAC-5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	Package: i4-Pac?-5	Stock7,920	Standard	100V	75A	25 mOhm @ 50A, 10V	4V @ 4mA	180nC @ 10V	-	-	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
ALD210804SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	Package: 16-SOIC (0.154", 3.90mm Width)	Stock4,960	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
ALD111933MAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8MSOP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.9V Vgs(th) (Max) @ Id: 3.35V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock5,440	Standard	10.6V	-	500 Ohm @ 5.9V	3.35V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
DMG1026UVQ-7	Diodes Incorporated	MOSFET BVDSS: 41V 60V SOT563 T&R FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.45pC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Power - Max: 650mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock3,856	Logic Level Gate	60V	440mA (Ta)	1.8 Ohm @ 500mA, 10V	1.8V @ 250µA	0.45pC @ 4.5V	32pF @ 25V	650mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FF11MR12W1M1B11BOMA1	Infineon Technologies Industrial Power and Controls Americas	MOSFET MODULE HALF 1200V 100A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 11 mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 5.55V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 7950pF @ 800V Power - Max: 20mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: Module	Stock3,504	Standard	1200V (1.2kV)	100A	11 mOhm @ 100A, 15V	5.55V @ 40mA	250nC @ 15V	7950pF @ 800V	20mW	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
US6M11TR	Rohm Semiconductor	MOSFET N/P-CH 20V/12V TUMT6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V, 12V Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	Package: 6-TSSOP, SC-88, SOT-363	Stock5,200	Logic Level Gate	20V, 12V	1.5A, 1.3A	180 mOhm @ 1.5A, 4.5V	1V @ 1mA	1.8nC @ 4.5V	110pF @ 10V	1W	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
DN2625DK6-G	Microchip Technology	MOSFET 2N-CH 250V 1.1A 8VDFN FET Type: 2 N-Channel (Dual) FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (5x5)	Package: 8-VDFN Exposed Pad	Stock17,076	Depletion Mode	250V	1.1A	3.5 Ohm @ 1A, 0V	-	7.04nC @ 1.5V	1000pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (5x5)
ALD1116SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock16,416	Standard	10.6V	-	500 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDS8928A	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V/20V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 5.5A, 4A Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock618,024	Logic Level Gate	30V, 20V	5.5A, 4A	30 mOhm @ 5.5A, 4.5V	1V @ 250µA	28nC @ 4.5V	900pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIA906EDJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	Package: PowerPAK? SC-70-6 Dual	Stock484,956	Logic Level Gate	20V	4.5A	46 mOhm @ 3.9A, 4.5V	1.4V @ 250µA	12nC @ 10V	350pF @ 10V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
NX6020CAKSAX	Nexperia USA Inc.	MOSFET N/P-CH 60V 0.17A 6TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), 160mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V, 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V, 0.35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V, 36pF @ 25V Power - Max: 220mW, 280mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: -	Request a Quote	-	60V, 50V	170mA (Ta), 160mA (Ta)	4.5Ohm @ 100mA, 10V, 7.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.43nC @ 4.5V, 0.35nC @ 5V	17pF @ 10V, 36pF @ 25V	220mW, 280mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PJS6801_S1_00001	Panjit International Inc.	MOSFET 2P-CH 30V 3.2A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 74mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 15V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	Package: -	Stock2,052	-	30V	3.2A (Ta)	74mOhm @ 3.2A, 10V	1.3V @ 250µA	15nC @ 10V	633pF @ 15V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
MMDF1N05ER2	onsemi	MOSFET 2N-CH 50V 2A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	Logic Level Gate	50V	2A	300mOhm @ 1.5A, 10V	3V @ 250µA	12.5nC @ 10V	330pF @ 25V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
RMD0A8P20ES9	Rectron USA	MOSFET 2P-CH 20V 0.8A SOT363-6L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.0018C @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363-6L	Package: -	Request a Quote	-	20V	800mA (Ta)	1.2Ohm @ 500mA, 4.5V	1V @ 250µA	0.0018C @ 4.5V	87pF @ 10V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363-6L
UPA2754GR-E2-A	Renesas Electronics Corporation	MOSFET 2N-CH 30V 11A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP	Package: -	Request a Quote	Logic Level Gate	30V	11A	14.5mOhm @ 5.5A, 4.5V	1.5V @ 1mA	25nC @ 4.5V	1940pF @ 10V	2W	-	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-PSOP
FBG20N04AC	EPC Space, LLC	MOSFET 200V 4A 4SMD FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: 4-SMD	Package: -	Request a Quote	Logic Level Gate	200V	4A (Tc)	130mOhm @ 4A, 5V	2.8V @ 1mA	3nC @ 5V	150pF @ 100V	-	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, No Lead	4-SMD
MCM2301-TP	Micro Commercial Co	MOSFET 2P-CH 20V 3.8A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: DFN2020-6L	Package: -	Stock66,270	-	20V	3.8A	70mOhm @ 1.9A, 4.5V	900mV @ 250µA	14.5nC @ 4.5V	880pF @ 6V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	DFN2020-6L
HUFA76407DK8TF085P	onsemi	MOSFET 2N-CH 60V 3.8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	Logic Level Gate	60V	3.8A (Ta)	90mOhm @ 3.8A, 10V	3V @ 250µA	-	330pF @ 25V	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN33D9LV-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.35A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 430mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Stock30,000	-	30V	350mA (Ta)	2.4Ohm @ 250mA, 10V	1.4V @ 100µA	1.23nC @ 10V	48pF @ 5V	430mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SSM6N24TU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.5A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	Package: -	Stock7,695	-	30V	500mA (Ta)	145mOhm @ 500mA, 4.5V	1.1V @ 100µA	-	245pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6