Page 166 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

NTQD4154ZR2
ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock6,272
STL60N32N3LL
STMicroelectronics

MOSFET 2N-CH 30V 32A/60A PWRFLAT

Package: 8-PowerVDFN

Stock4,752
IPG16N10S461ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

Package: 8-PowerVDFN

Stock2,464
APTM100H35FT3G
Microsemi Corporation

MOSFET 4N-CH 1000V 22A SP3

Package: SP3

Stock6,416
SI4966DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,976
ECH8691-TL-W
ON Semiconductor

MOSFET 2P-CH ECH8

Package: -

Stock7,904
DMN3016LDV-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V POWERDI333

Package: 8-PowerVDFN

Stock2,448
AO4862
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 4.5A

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,528
FDG6318P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.5A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock225,384
PMDPB70XPE,115
Nexperia USA Inc.

MOSFET 2P-CH 20V 3A 6HUSON

Package: 6-UDFN Exposed Pad

Stock21,906
SIZ918DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 16A POWERPAIR

Package: 6-PowerPair?

Stock24,456
IRF7313TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,628,580
SI3993DV-T1-E3
Vishay Siliconix

MOSFET 2P-CH 30V 1.8A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock678,996
DMN2016UTS-13
Diodes Incorporated

MOSFET 2N-CH 20V 8.58A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock30,000
SI3993CDV-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 2.9A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,162,704
DMN32D2LV-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.4A SOT-563

Package: SOT-563, SOT-666

Stock457,200
DMN2990UDJ-7
Diodes Incorporated

MOSFET 2N-CH 20V 0.45A SOT-963

Package: SOT-963

Stock100,710
DMP4047SSDQ-13
Diodes Incorporated

MOSFET 2P-CH 40V 5.1A 8SO

Package: -

Stock7,470
MMFTC6420
Diotec Semiconductor

IC

Package: -

Request a Quote
IXFN27N120SK
IXYS

SIC 2N-CH 1200V SOT227B

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NTQD4154ZR2	ON Semiconductor	MOSFET 2N-CH 20V 7.5A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1485pF @ 16V Power - Max: 1.52W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock6,272	Logic Level Gate	20V	7.5A	19 mOhm @ 7.5A, 4.5V	1.5V @ 250µA	21.5nC @ 4.5V	1485pF @ 16V	1.52W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
STL60N32N3LL	STMicroelectronics	MOSFET 2N-CH 30V 32A/60A PWRFLAT FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A, 60A Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Power - Max: 23W, 50W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	Package: 8-PowerVDFN	Stock4,752	Logic Level Gate	30V	32A, 60A	9.2 mOhm @ 6.8A, 10V	1V @ 1µA	6.6nC @ 4.5V	950pF @ 25V	23W, 50W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
IPG16N10S461ATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 61 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3.5V @ 9µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Power - Max: 29W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	Package: 8-PowerVDFN	Stock2,464	Standard	100V	16A	61 mOhm @ 16A, 10V	3.5V @ 9µA	7nC @ 10V	490pF @ 25V	29W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
APTM100H35FT3G	Microsemi Corporation	MOSFET 4N-CH 1000V 22A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock6,416	Standard	1000V (1kV)	22A	420 mOhm @ 11A, 10V	5V @ 2.5mA	186nC @ 10V	5200pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SI4966DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,976	Logic Level Gate	20V	-	25 mOhm @ 7.1A, 4.5V	1.5V @ 250µA	50nC @ 4.5V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ECH8691-TL-W	ON Semiconductor	MOSFET 2P-CH ECH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock7,904	-	-	-	-	-	-	-	-	-	-	-	-
DMN3016LDV-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V POWERDI333 FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	Package: 8-PowerVDFN	Stock2,448	Standard	-	21A (Tc)	12 mOhm @ 7A, 10V	2V @ 250µA	9.5nC @ 4.5V	1184pF @ 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
AO4862	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 4.5A FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 15V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,528	Logic Level Gate	30V	4.5A	50 mOhm @ 4.5A, 10V	2.5V @ 250µA	10nC @ 10V	200pF @ 15V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDG6318P	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 0.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: 6-TSSOP, SC-88, SOT-363	Stock225,384	Logic Level Gate	20V	500mA	780 mOhm @ 500mA, 4.5V	1.5V @ 250µA	1.2nC @ 4.5V	83pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
PMDPB70XPE,115	Nexperia USA Inc.	MOSFET 2P-CH 20V 3A 6HUSON FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 79 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 515mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	Package: 6-UDFN Exposed Pad	Stock21,906	Logic Level Gate	20V	3A	79 mOhm @ 2A, 4.5V	1.25V @ 250µA	7.5nC @ 4.5V	600pF @ 10V	515mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
SIZ918DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16A POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 28A Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Power - Max: 29W, 100W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	Package: 6-PowerPair?	Stock24,456	Logic Level Gate	30V	16A, 28A	12 mOhm @ 13.8A, 10V	2.2V @ 250µA	21nC @ 10V	790pF @ 15V	29W, 100W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
IRF7313TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 6.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,628,580	Standard	30V	6.5A	29 mOhm @ 5.8A, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI3993DV-T1-E3	Vishay Siliconix	MOSFET 2P-CH 30V 1.8A 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 133 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock678,996	Logic Level Gate	30V	1.8A	133 mOhm @ 2.2A, 10V	3V @ 250µA	5nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
DMN2016UTS-13	Diodes Incorporated	MOSFET 2N-CH 20V 8.58A 8-TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.58A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V Power - Max: 880mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock30,000	Logic Level Gate	20V	8.58A	14.5 mOhm @ 9.4A, 4.5V	1V @ 250µA	16.5nC @ 4.5V	1495pF @ 10V	880mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI3993CDV-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 2.9A 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 111 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,162,704	Standard	30V	2.9A	111 mOhm @ 2.5A, 10V	2.2V @ 250µA	8nC @ 10V	210pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
DMN32D2LV-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.4A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V Power - Max: 400mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock457,200	Logic Level Gate	30V	400mA	1.2 Ohm @ 100mA, 4V	1.2V @ 250µA	-	39pF @ 3V	400mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN2990UDJ-7	Diodes Incorporated	MOSFET 2N-CH 20V 0.45A SOT-963 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA Rds On (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	Package: SOT-963	Stock100,710	Logic Level Gate	20V	450mA	990 mOhm @ 100mA, 4.5V	1V @ 250µA	0.5nC @ 4.5V	27.6pF @ 16V	350mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
DMP4047SSDQ-13	Diodes Incorporated	MOSFET 2P-CH 40V 5.1A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V Power - Max: 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Stock7,470	-	40V	5.1A (Ta)	45mOhm @ 4.4A, 10V	3V @ 250µA	21.5nC @ 10V	1154pF @ 20V	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MMFTC6420	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.2A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V, 125mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V, 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V, 340pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SOT-26	Package: -	Request a Quote	-	20V	3A (Ta), 2.2A (Ta)	70mOhm @ 3A, 4.5V, 125mOhm @ 2.2A, 4.5V	1.5V @ 250µA	3.3nC @ 4.5V, 4nC @ 4.5V	324pF @ 10V, 340pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SOT-26
IXFN27N120SK	IXYS	SIC 2N-CH 1200V SOT227B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	Package: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
TP44220HB	Tagore Technology	GANFET 2N-CH 650V 30QFN FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 236mOhm @ 500mA, 6V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 400V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 30-PowerWFQFN Supplier Device Package: 30-QFN (8x10)	Package: -	Stock270	-	650V	10A (Tc)	236mOhm @ 500mA, 6V	2.5V @ 5.5mA	1.5nC @ 6V	55pF @ 400V	-	-55°C ~ 150°C (TJ)	Surface Mount	30-PowerWFQFN	30-QFN (8x10)
2N7002DW-TPQ2	Micro Commercial Co	MOSFET 2N-CH 60V 0.34A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Request a Quote	-	60V	340mA	2.5Ohm @ 300mA, 10V	2.5V @ 250µA	-	50pF @ 25V	300mW	-55°C ~ 150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BUK9K29-100E-1X	Nexperia USA Inc.	MOSFET 100V 30A LFPAK56D FET Type: - FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3637pF @ 25V Power - Max: 68W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: -	Request a Quote	Logic Level Gate	100V	30A (Ta)	27mOhm @ 5A, 10V	2.1V @ 1mA	54nC @ 10V	3637pF @ 25V	68W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
IRFR2209AS2463	Harris Corporation	MOSFET TO252 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
TQM076NH04LDCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 40V 15A/40A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2006pF @ 25V Power - Max: 55.6W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	Package: -	Stock7,500	-	40V	15A (Ta), 40A (Tc)	7.6mOhm @ 20A, 10V	2.2V @ 250µA	34nC @ 10V	2006pF @ 25V	55.6W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFN (5x6)
MSCSM120AM027CD3AG	Microchip Technology	SIC 2N-CH 1200V 733A D3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V Power - Max: 2.97kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: D3	Package: -	Stock3	-	1200V (1.2kV)	733A (Tc)	3.5mOhm @ 360A, 20V	2.8V @ 9mA	2088nC @ 20V	27000pF @1000V	2.97kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	D3
SQ3985EV-T1_BE3	Vishay Siliconix	MOSFET 2P-CH 20V 3.9A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Power - Max: 3W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: -	Request a Quote	-	20V	3.9A (Tc)	145mOhm @ 2.8A, 4.5V	1.5V @ 250µA	4.6nC @ 10V	350pF @ 10V	3W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SIZ340BDT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16.9A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc) Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	Package: -	Stock18,267	-	30V	16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)	8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V	2.4V @ 250µA	12.6nC @ 10V, 23.5nC @ 10V	550pF @ 15V, 1065pF @ 15V	3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)