Page 170 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

SI4310BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 7.5A 14SOIC

Package: 14-SOIC (0.154", 3.90mm Width)

Stock6,992
APTM20AM05FTG
Microsemi Corporation

MOSFET 2N-CH 200V 333A SP4

Package: SP4

Stock4,560
SI4569DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 40V 7.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock131,568
FDC6000NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.3A 6SSOT

Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

Stock12,192
NTHD4401PT3G
ON Semiconductor

MOSFET 2P-CH 20V 2.1A CHIPFET

Package: 8-SMD, Flat Lead

Stock202,200
APTC90H12SCTG
Microsemi Corporation

MOSFET 4N-CH 900V 30A SP4

Package: SP4

Stock6,016
FMM110-015X2F
IXYS

MOSFET 2N-CH 150V 53A I4-PAC

Package: i4-Pac?-5

Stock3,392
ALD1101BPAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

Package: 8-DIP (0.300", 7.62mm)

Stock4,336
TC6215TG-G
Microchip Technology

MOSFET N/P-CH 150V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock91,740
NVMFD5873NLT1G
ON Semiconductor

MOSFET 2N-CH 60V 10A SO8FL

Package: 8-PowerTDFN

Stock7,776
DMC3016LDV-7
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

Package: 8-PowerVDFN

Stock5,968
EFC2J003NUZTCG
ON Semiconductor

MOSFET N-CH 12V DUAL WLCSP6

Package: -

Stock2,512
DMN33D8LDW-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.25A

Package: 6-TSSOP, SC-88, SOT-363

Stock3,168
BSZ15DC02KDHXTMA1
Infineon Technologies

MOSFET N/P-CH 20V 8TDSON

Package: 8-PowerTDFN

Stock2,048
DMN2008LFU-7
Diodes Incorporated

MOSFET 2N-CHA 20V 14.5A DFN2030

Package: 6-UFDFN Exposed Pad

Stock3,264
SI4816BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 5.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock55,704
SI7997DP-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 60A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock16,404
CCB032M12FM3
Wolfspeed, Inc.

SIC 6N-CH 1200V 40A MODULE

Package: -

Stock243
HT8KE5TB1
Rohm Semiconductor

MOSFET 2N-CH 100V 2.5A/7A 8HSMT

Package: -

Stock8,970
DMC1028UVT-7
Diodes Incorporated

MOSFET N/P-CH 12V 6.1A TSOT26

Package: -

Stock10,983

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI4310BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 7.5A 14SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A, 9.8A Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V Power - Max: 1.14W, 1.47W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	Package: 14-SOIC (0.154", 3.90mm Width)	Stock6,992	Logic Level Gate	30V	7.5A, 9.8A	11 mOhm @ 10A, 10V	3V @ 250µA	18nC @ 4.5V	2370pF @ 15V	1.14W, 1.47W	-55°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
APTM20AM05FTG	Microsemi Corporation	MOSFET 2N-CH 200V 333A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 333A Rds On (Max) @ Id, Vgs: 5 mOhm @ 166.5A, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	Package: SP4	Stock4,560	Standard	200V	333A	5 mOhm @ 166.5A, 10V	4V @ 8mA	1184nC @ 10V	40800pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
SI4569DY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 40V 7.6A 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V Power - Max: 3.1W, 3.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock131,568	Standard	40V	7.6A, 7.9A	27 mOhm @ 6A, 10V	2V @ 250µA	32nC @ 10V	855pF @ 20V	3.1W, 3.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDC6000NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.3A 6SSOT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.3A Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP Supplier Device Package: SuperSOT?-6 FLMP	Package: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	Stock12,192	Logic Level Gate	20V	7.3A	20 mOhm @ 6.5A, 4.5V	1.5V @ 250µA	11nC @ 4.5V	840pF @ 10V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT Flat-lead, SuperSOT?-6 FLMP	SuperSOT?-6 FLMP
NTHD4401PT3G	ON Semiconductor	MOSFET 2P-CH 20V 2.1A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	Package: 8-SMD, Flat Lead	Stock202,200	Logic Level Gate	20V	2.1A	155 mOhm @ 2.1A, 4.5V	1.2V @ 250µA	6nC @ 4.5V	300pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
APTC90H12SCTG	Microsemi Corporation	MOSFET 4N-CH 900V 30A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	Package: SP4	Stock6,016	Super Junction	900V	30A	120 mOhm @ 26A, 10V	3.5V @ 3mA	270nC @ 10V	6800pF @ 100V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
FMM110-015X2F	IXYS	MOSFET 2N-CH 150V 53A I4-PAC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 53A Rds On (Max) @ Id, Vgs: 20 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V Power - Max: 180W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	Package: i4-Pac?-5	Stock3,392	Standard	150V	53A	20 mOhm @ 55A, 10V	4.5V @ 250µA	150nC @ 10V	8600pF @ 25V	180W	-55°C ~ 175°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
ALD1101BPAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	Package: 8-DIP (0.300", 7.62mm)	Stock4,336	Standard	10.6V	-	75 Ohm @ 5V	1V @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
TC6215TG-G	Microchip Technology	MOSFET N/P-CH 150V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock91,740	Standard	150V	-	4 Ohm @ 2A, 10V	2V @ 1mA	-	120pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NVMFD5873NLT1G	ON Semiconductor	MOSFET 2N-CH 60V 10A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V Power - Max: 3.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	Package: 8-PowerTDFN	Stock7,776	Logic Level Gate	60V	10A	13 mOhm @ 15A, 10V	2.5V @ 250µA	30.5nC @ 10V	1560pF @ 25V	3.1W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
DMC3016LDV-7	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI333 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	Package: 8-PowerVDFN	Stock5,968	Standard	30V	21A (Tc), 15A (Tc)	12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V	2.4V @ 250µA	9.5nC @ 4.5V	1184pF @ 15V, 1188pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
EFC2J003NUZTCG	ON Semiconductor	MOSFET N-CH 12V DUAL WLCSP6 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock2,512	-	-	-	-	-	-	-	-	-	-	-	-
DMN33D8LDW-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.25A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock3,168	Standard	30V	250mA	2.4 Ohm @ 250mA, 10V	1.5V @ 100µA	1.23nC @ 10V	48pF @ 5V	350mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BSZ15DC02KDHXTMA1	Infineon Technologies	MOSFET N/P-CH 20V 8TDSON FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSDSON-8-FL	Package: 8-PowerTDFN	Stock2,048	Logic Level Gate, 2.5V Drive	20V	5.1A, 3.2A	55 mOhm @ 5.1A, 4.5V	1.4V @ 110µA	2.8nC @ 4.5V	419pF @ 10V	2.5W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PG-TSDSON-8-FL
DMN2008LFU-7	Diodes Incorporated	MOSFET 2N-CHA 20V 14.5A DFN2030 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	Package: 6-UFDFN Exposed Pad	Stock3,264	Standard	20V	14.5A	5.4 mOhm @ 5.5A, 4.5V	1.5V @ 250A	42.3nC @ 10V	1418pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
SI4816BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 5.8A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W, 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock55,704	Logic Level Gate	30V	5.8A, 8.2A	18.5 mOhm @ 6.8A, 10V	3V @ 250µA	10nC @ 5V	-	1W, 1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7997DP-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 60A PPAK SO-8 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V Power - Max: 46W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock16,404	Standard	30V	60A	5.5 mOhm @ 20A, 10V	2.2V @ 250µA	160nC @ 10V	6200pF @ 15V	46W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
CCB032M12FM3	Wolfspeed, Inc.	SIC 6N-CH 1200V 40A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock243	-	1200V (1.2kV)	40A	42.6mOhm @ 30A, 15V	3.6V @ 11.5mA	118nC @ 15V	3400pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
HT8KE5TB1	Rohm Semiconductor	MOSFET 2N-CH 100V 2.5A/7A 8HSMT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 7A (Tc) Rds On (Max) @ Id, Vgs: 193mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Power - Max: 2W (Ta), 13W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-HSMT (3.2x3)	Package: -	Stock8,970	-	100V	2.5A (Ta), 7A (Tc)	193mOhm @ 2.5A, 10V	2.5V @ 1mA	2.9nC @ 10V	90pF @ 50V	2W (Ta), 13W (Tc)	150°C (TJ)	Surface Mount	8-PowerVDFN	8-HSMT (3.2x3)
DMC1028UVT-7	Diodes Incorporated	MOSFET N/P-CH 12V 6.1A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Stock10,983	-	12V, 20V	6.1A (Ta), 3.5A (Ta)	25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V	1V @ 250µA	18.5nC @ 8V, 11.5nC @ 8V	787pF @ 6V, 576pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
SQ4532AEY-T1_GE3	Vishay Siliconix	MOSFET N/P-CH 30V 7.3A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V Power - Max: 3.3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Stock9,534	-	30V	7.3A (Tc), 5.3A (Tc)	31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V	2.5V @ 250µA	7.8nC @ 10V, 10.2nC @ 10V	535pF @ 15V, 528pF @ 15V	3.3W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
GSFB0305	Good-Ark Semiconductor	MOSFET 2P-CH 30V 4.2A/8A 6PPAK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power - Max: 1.9W (Ta), 7.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-PPAK (2x2)	Package: -	Stock18,000	-	30V	4.2A (Ta), 8A (Tc)	75mOhm @ 3A, 10V	2.5V @ 250µA	10nC @ 4.5V	820pF @ 15V	1.9W (Ta), 7.4W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-PPAK (2x2)
SSM6L36TU-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.5A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta) Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	Package: -	Stock11,970	Logic Level Gate, 1.5V Drive	20V	500mA (Ta), 330mA (Ta)	630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V	1V @ 1mA	1.23nC @ 4V, 1.2nC @ 4V	46pF @ 10V, 43pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SCH2602-TL-E	onsemi	PCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NTMFD5C674NLT1G	onsemi	MOSFET 2N-CH 60V 11A/42A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Power - Max: 3W (Ta), 37W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Stock3,000	-	60V	11A (Ta), 42A (Tc)	14.4mOhm @ 10A, 10V	2.2V @ 25µA	10nC @ 10V	640pF @ 25V	3W (Ta), 37W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
AO4606	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 6A/6.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 760pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	-	30V	6A (Ta), 6.5A (Ta)	30mOhm @ 6A, 10V, 28mOhm @ 6.5A, 10V	2.4V @ 250µA	6nC @ 10V, 16nC @ 10V	310pF @ 15V, 760pF @ 15V	2W	-55°C ~ 150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
2N7002DW-7-F-79	Diodes Incorporated	MOSFET 2N-CH 60V SOT-363 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
ECH8661-TL-HX	onsemi	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-