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Infineon Technologies |
MOSFET 2N-CH 30V 6.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
- Power - Max: 2.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
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Package: 8-SOIC |
Stock6,384 |
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Logic Level Gate | 30V | 6.9A | 29 mOhm @ 6.9A, 10V | 3V @ 250µA | 33nC @ 10V | 755pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SO |
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Vishay Siliconix |
MOSFET 4P-CH 30V 0.6A 14DIP
- FET Type: 4 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 600mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock144,000 |
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Standard | 30V | 600mA | 2 Ohm @ 1A, 12V | 4.5V @ 1mA | - | 150pF @ 15V | 2W | -55°C ~ 150°C (TJ) | - | - | - |
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Vishay Siliconix |
MOSFET 2P-CH 20V 2.1A 1206-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.1A
- Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
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Package: 8-SMD, Flat Lead |
Stock20,808 |
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Logic Level Gate | 20V | 2.1A | 155 mOhm @ 2.1A, 4.5V | 600mV @ 250µA (Min) | 6nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
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Infineon Technologies |
MOSFET 2P-CH 30V 1.5A 6TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 6.3µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,120 |
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Logic Level Gate, 4.5V Drive | 30V | 1.5A | 140 mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | 294pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 |
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Vishay Siliconix |
MOSFET 2P-CH 12V 4.3A 8TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 5mA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock9,936 |
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Logic Level Gate | 12V | 4.3A | 27 mOhm @ 5.1A, 4.5V | 450mV @ 5mA (Min) | 30nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2P-CH 20V 3A DFN2X2-6L
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
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Package: 6-WDFN Exposed Pad |
Stock110,628 |
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Logic Level Gate | 20V | 3A | 120 mOhm @ 3A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 700pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-DFN-EP (2x2) |
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ON Semiconductor |
MOSFET 2P-CH 20V 0.43A SOT563
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 430mA
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563-6
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Package: SOT-563, SOT-666 |
Stock182,892 |
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Standard | 20V | 430mA | 900 mOhm @ 430mA, 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | 175pF @ 16V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563-6 |
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Microsemi Corporation |
MOSFET 2N-CH 200V 372A SP6
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 372A
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock7,456 |
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Standard | 200V | 372A | 5 mOhm @ 186A, 10V | 5V @ 10mA | 560nC @ 10V | 28900pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8DIP
- FET Type: 2 P-Channel (Dual) Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V
- Vgs(th) (Max) @ Id: 1.2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock4,928 |
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Standard | 10.6V | - | 270 Ohm @ 5V | 1.2V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
MOSFET 2N-CH 60V 15A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock14,352 |
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Standard | 60V | 15A | 15 mOhm @ 8A, 10V | 3.6V @ 250µA | 18nC @ 10V | 1400pF @ 30V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Rohm Semiconductor |
MOSFET 2P-CH 12V 5.5A TSMT8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.5A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 6V
- Power - Max: 1.25W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: 8-SMD, Flat Lead |
Stock6,416 |
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Logic Level Gate | 12V | 5.5A | 22 mOhm @ 5.5A, 4.5V | 1V @ 1mA | 60nC @ 4.5V | 6300pF @ 6V | 1.25W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Vishay Siliconix |
MOSFET 2N-CH 20V SC89-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
- Rds On (Max) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
- Power - Max: 220mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SC-89-6
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Package: SOT-563, SOT-666 |
Stock1,913,280 |
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Logic Level Gate | 20V | 610mA (Ta) | 396 mOhm @ 500mA, 4.5V | 1V @ 250µA | 2nC @ 8V | 43pF @ 10V | 220mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 30V 5A/6A 8DFN
- FET Type: N and P-Channel, Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A, 6A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
- Power - Max: 2.1W, 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-DFN (2.9x2.3)
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Package: 8-SMD, Flat Lead |
Stock128,352 |
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Logic Level Gate | 30V | 5A, 6A | 50 mOhm @ 5A, 10V | 2.5V @ 250µA | 10nC @ 10V | 170pF @ 15V | 2.1W, 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-DFN (2.9x2.3) |
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Vishay Siliconix |
MOSFET 2P-CH 30V 4.5A SC70-6L
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
- Power - Max: 7.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-70-6 Dual
- Supplier Device Package: PowerPAK? SC-70-6 Dual
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Package: PowerPAK? SC-70-6 Dual |
Stock144,000 |
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Logic Level Gate | 30V | 4.5A | 65 mOhm @ 3A, 10V | 2.2V @ 250µA | 13nC @ 10V | 445pF @ 15V | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
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Texas Instruments |
MOSFET 2P-CH 15V 1.17A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 15V
- Current - Continuous Drain (Id) @ 25°C: 1.17A
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 840mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock306,444 |
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Logic Level Gate | 15V | 1.17A | 180 mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | 840mW | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 30V 7A/5A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A, 5A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock43,818 |
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Logic Level Gate | 30V | 7A, 5A | 28 mOhm @ 7A, 10V | 3V @ 250µA | 16nC @ 10V | 575pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 40V 6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock415,344 |
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Logic Level Gate | 40V | 6A | 30 mOhm @ 6A, 10V | 3V @ 250µA | 10.8nC @ 10V | 650pF @ 20V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
MOSFET 2N-CH 40V 10.6A POWERDI50
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
- Power - Max: 2.41W (Ta), 42.8W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8
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Package: - |
Stock7,500 |
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- | 40V | 10.6A (Ta), 43.6A (Tc) | 15mOhm @ 20A, 10V | 3V @ 250µA | 10.2nC @ 10V | 733pF @ 20V | 2.41W (Ta), 42.8W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 |
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Rohm Semiconductor |
100V NCH + PCH SMALL SIGNAL MOSF
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
- Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
- Power - Max: 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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Package: - |
Stock8,910 |
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- | 100V | 2A (Ta), 1.5A (Ta) | 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V | 2.5V @ 1mA | 4.7nC @ 5V, 17nC @ 5V | 290pF @ 25V, 950pF @ 25V | 1.1W (Ta) | -55°C ~ 150°C | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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Microchip Technology |
SIC 4N-CH 1700V 238A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
- Power - Max: 1.114kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
|
Package: - |
Stock27 |
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- | 1700V (1.7kV) | 238A (Tc) | 11.3mOhm @ 120A, 20V | 3.2V @ 10mA | 712nC @ 20V | 13200pF @ 1000V | 1.114kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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WeEn Semiconductors |
MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
MOSFET 2N-CH 100V 3A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock29,685 |
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- | 100V | 3A (Ta) | 170mOhm @ 3A, 10V | 2.5V @ 1mA | 8.5nC @ 5V | 610pF @ 25V | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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onsemi |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Micro Commercial Co |
MOSFET 2N-CH 60V 0.34A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 340mA
- Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- Power - Max: 150mW
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Stock4,233 |
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- | 60V | 340mA | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | 40pF @ 10V | 150mW | -55°C ~ 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Diodes Incorporated |
MOSFET N/P-CH 30V 0.4A 6DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V
- Power - Max: 370mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: X2-DFN0806-6
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Package: - |
Request a Quote |
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- | 30V | 400mA (Ta), 220mA (Ta) | 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.38nC @ 4.5V, 0.35nC @ 4.5V | 22.6pF @ 15V, 21.8pF @ 15V | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-SMD, No Lead | X2-DFN0806-6 |
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Renesas Electronics Corporation |
MOSFET N-CH DUAL LGA
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Harris Corporation |
MOSFET N-CH 500V 8A
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Micro Commercial Co |
MOSFET 2N-CH 60V 3A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 30V
- Power - Max: 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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- | 60V | 3A | 105mOhm @ 3A, 10V | 1.4V @ 250µA | 6nC @ 4.5V | 247pF @ 30V | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |