Page 176 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

MP6M14TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 8A/6A MPT6

Package: 6-SMD, Flat Leads

Stock7,904
SQ4946EY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 4.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock389,544
FDG6304P_D87Z
Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.41A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock3,424
TPIC1502DW
Texas Instruments

MOSFET 20V 1.5A DMOS 24-DW

Package: 24-SOIC (0.295", 7.50mm Width)

Stock2,000
BSO203PHXUMA1
Infineon Technologies

MOSFET 2P-CH 20V 7A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,256
ALD111910SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 8SOIC

Package: -

Stock3,808
SI4505DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V/8V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock705,216
AO8808A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7.9A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock464,124
FW344A-TL-2W
ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock144,000
DMN3035LWN-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V V-DFN3020-

Package: 8-PowerVDFN

Stock5,072
NTZD3155CT1H
ON Semiconductor

MOSFET N/P-CH 20V SOT563

Package: SOT-563, SOT-666

Stock7,776
FDMS3664S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/25A 8-PQFN

Package: 8-PowerTDFN

Stock2,141,112
ALD110802PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

Package: 16-DIP (0.300", 7.62mm)

Stock7,552
BSL316CH6327XTSA1
Infineon Technologies

MOSFET N/P-CH 30V 1.4A/1.5A TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock68,490
ALD110814SCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

Package: 16-SOIC (0.154", 3.90mm Width)

Stock6,168
DMTH6010LPD-13
Diodes Incorporated

MOSFET 2N-CHA 60V 13.1A POWERDI

Package: 8-PowerTDFN

Stock19,092
DMN3022LDG-13
Diodes Incorporated

MOSFET 2N-CH 30V 7.6A PWRDI3333

Package: -

Request a Quote
SSFK3220B
Good-Ark Semiconductor

MOSFET 2 N-CH 20V 0.8A SOT363

Package: -

Stock17,700
SI6926ADQ-T1-BE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.1A 8TSSOP

Package: -

Stock26,955
DMC3732UVT-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MP6M14TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 8A/6A MPT6 FET Type: N and P-Channel FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 6A Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: MPT6	Package: 6-SMD, Flat Leads	Stock7,904	Logic Level Gate, 4V Drive	30V	8A, 6A	25 mOhm @ 8A, 10V	2.5V @ 1mA	7.3nC @ 5V	470pF @ 10V	2W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	MPT6
SQ4946EY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 60V 4.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock389,544	Logic Level Gate	60V	4.5A	55 mOhm @ 4.5A, 10V	3V @ 250µA	30nC @ 10V	-	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDG6304P_D87Z	Fairchild/ON Semiconductor	MOSFET 2P-CH 25V 0.41A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 410mA Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: 6-TSSOP, SC-88, SOT-363	Stock3,424	Logic Level Gate	25V	410mA	1.1 Ohm @ 410mA, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	62pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
TPIC1502DW	Texas Instruments	MOSFET 20V 1.5A DMOS 24-DW FET Type: - FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 98pF @ 14V Power - Max: 2.86W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Supplier Device Package: 24-SOIC	Package: 24-SOIC (0.295", 7.50mm Width)	Stock2,000	Logic Level Gate	20V	1.5A	300 mOhm @ 1.5A, 10V	2.2V @ 1mA	2.1nC @ 10V	98pF @ 14V	2.86W	-40°C ~ 150°C (TJ)	Surface Mount	24-SOIC (0.295", 7.50mm Width)	24-SOIC
BSO203PHXUMA1	Infineon Technologies	MOSFET 2P-CH 20V 7A 8DSO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,256	Logic Level Gate	20V	7A	21 mOhm @ 8.2A, 4.5V	1.2V @ 100µA	39nC @ 4.5V	3750pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	P-DSO-8
ALD111910SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 8SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock3,808	-	-	-	-	-	-	-	-	-	-	-	-
SI4505DY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 8V Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock705,216	Logic Level Gate	30V, 8V	6A, 3.8A	18 mOhm @ 7.8A, 10V	1.8V @ 250µA	20nC @ 5V	-	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO8808A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 7.9A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock464,124	Logic Level Gate	20V	-	14 mOhm @ 8A, 10V	1V @ 250µA	17.9nC @ 4.5V	1810pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FW344A-TL-2W	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Rds On (Max) @ Id, Vgs: 64 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Power - Max: 1.7W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock144,000	Logic Level Gate, 4V Drive	30V	4.5A, 3.5A	64 mOhm @ 4.5A, 10V	-	5.6nC @ 10V	280pF @ 10V	1.7W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN3035LWN-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V V-DFN3020- FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: V-DFN3020-8	Package: 8-PowerVDFN	Stock5,072	Standard	-	5.5A (Ta)	35 mOhm @ 4.8A, 10V	2V @ 250µA	4.5nC @ 4.5V	399pF @ 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	V-DFN3020-8
NTZD3155CT1H	ON Semiconductor	MOSFET N/P-CH 20V SOT563 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563-6	Package: SOT-563, SOT-666	Stock7,776	Standard	20V	540mA, 430mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	150pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563-6
FDMS3664S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/25A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 25A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	Package: 8-PowerTDFN	Stock2,141,112	Logic Level Gate	30V	13A, 25A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1765pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
ALD110802PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.2V Vgs(th) (Max) @ Id: 220mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	Package: 16-DIP (0.300", 7.62mm)	Stock7,552	Standard	10.6V	-	500 Ohm @ 4.2V	220mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
BSL316CH6327XTSA1	Infineon Technologies	MOSFET N/P-CH 30V 1.4A/1.5A TSOP FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock68,490	Logic Level Gate, 4.5V Drive	30V	1.4A, 1.5A	160 mOhm @ 1.4A, 10V	2V @ 3.7µA	0.6nC @ 5V	282pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
ALD110814SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V Vgs(th) (Max) @ Id: 1.42V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	Package: 16-SOIC (0.154", 3.90mm Width)	Stock6,168	Standard	10.6V	12mA, 3mA	500 Ohm @ 5.4V	1.42V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
DMTH6010LPD-13	Diodes Incorporated	MOSFET 2N-CHA 60V 13.1A POWERDI FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V Power - Max: 2.8W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	Package: 8-PowerTDFN	Stock19,092	Standard	60V	13.1A (Ta), 47.6A (Tc)	11 mOhm @ 20A, 10V	3V @ 250µA	40.2nC @ 10V	2615pF @ 30V	2.8W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
DMN3022LDG-13	Diodes Incorporated	MOSFET 2N-CH 30V 7.6A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V Power - Max: 1.96W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	Package: -	Request a Quote	-	30V	7.6A (Ta), 15A (Tc)	22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V	2.1V @ 250µA, 1.2V @ 250µA	3.7nC @ 4.5V, 8nC @ 4.5V	481pF @ 15V, 996pF @ 15V	1.96W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)
SSFK3220B	Good-Ark Semiconductor	MOSFET 2 N-CH 20V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Power - Max: 275mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Stock17,700	Logic Level Gate, 1.5V Drive	20V	800mA (Tc)	300mOhm @ 500mA, 4.5V	1V @ 250µA	2nC @ 4.5V	75pF @ 10V	275mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SI6926ADQ-T1-BE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: -	Stock26,955	-	20V	4.1A (Ta)	30mOhm @ 4.5A, 4.5V	1V @ 250µA	10.5nC @ 4.5V	-	830mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DMC3732UVT-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V Power - Max: 540mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Request a Quote	-	30V	1.1A (Ta), 700mA (Ta)	460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V	0.95V @ 250µA, 1.1V @ 250µA	0.9nC @ 4.5V, 1.6nC @ 8V	40.8pF @ 25V, 54pF @ 15V	540mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
XP2531GY	YAGEO XSEMI	MOSFET N AND P-CH 16V 3.5A 2.5A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 10V Power - Max: 1.14W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	Package: -	Stock3,000	-	16V	3.5A (Ta), 2.5A (Ta)	58mOhm @ 3A, 4.5V	1V @ 250µA	12nC @ 4.5V	585pF @ 10V	1.14W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
UPA2751GR-E1-AT	Renesas Electronics Corporation	MOSFET 2N-CH 30V 9A/8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 8A Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP	Package: -	Request a Quote	Logic Level Gate	30V	9A, 8A	15.5mOhm @ 4.5A, 10V	2.5V @ 1mA	21nC @ 10V	1040pF @ 10V	2W	-	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-PSOP
MSCSM170HRM075NG	Microchip Technology	SIC 4N-CH 1700V/1200V 337A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc), 317A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V Vgs(th) (Max) @ Id: 3.2V @ 15mA, 2.8V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V, 928nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V, 12100pF @ 1000V Power - Max: 1.492kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1700V (1.7kV), 1200V (1.2kV)	337A (Tc), 317A (Tc)	7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V	3.2V @ 15mA, 2.8V @ 12mA	1068nC @ 20V, 928nC @ 20V	19800pF @ 1000V, 12100pF @ 1000V	1.492kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
STMFS4854NST1G-ON	onsemi	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
KFCAB21520LE	Nuvoton Technology Corporation	DUAL NCH MOSFET 12, 16A, 1.6MOHM FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.64mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 10V Power - Max: 540mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-SMD	Package: -	Stock3,000	-	12V	16A (Ta)	2mOhm @ 8A, 4.5V	1.4V @ 1.64mA	38nC @ 4V	5250pF @ 10V	540mW (Ta)	150°C	Surface Mount	10-SMD, No Lead	10-SMD
DI017P03PT2-AQ	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 20V Power - Max: 13.1W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-QFN (3x3)	Package: -	Request a Quote	Logic Level Gate	30V	17A (Tc)	30mOhm @ 10A, 10V	2.5V @ 250µA	19.8nC @ 10V	1150pF @ 20V	13.1W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	8-QFN (3x3)
CCB021M12FM3	Wolfspeed, Inc.	SIC 6N-CH 1200V 51A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock177	-	1200V (1.2kV)	51A	27.9mOhm @ 30A, 15V	3.6V @ 17.7mA	162nC @ 15V	4900pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
QS6K1FRATR	Rohm Semiconductor	MOSFET 2N-CH 30V 1A TSMT6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V Power - Max: 900mW (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSMT6 (SC-95)	Package: -	Stock42,042	Logic Level Gate, 2.5V Drive	30V	1A (Ta)	238mOhm @ 1A, 4.5V	1.5V @ 1mA	2.4nC @ 4.5V	77pF @ 10V	900mW (Tc)	150°C	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSMT6 (SC-95)