Page 177 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF9389PBF
Infineon Technologies

MOSFET N/P-CH 30V 6.8A/4.6A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,216
NTLUD3191PZTBG
ON Semiconductor

MOSFET 2P-CH 20V 1.1A 6UDFN

Package: 6-UFDFN Exposed Pad

Stock3,520
SI4952DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 25V 8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock473,688
NTHD3100CT3
ON Semiconductor

MOSFET N/P-CH 20V CHIPFET

Package: 8-SMD, Flat Lead

Stock4,640
TPCF8402(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 4A/3.2A VS-8

Package: 8-SMD, Flat Lead

Stock4,704
BSL205NH6327XTSA1
Infineon Technologies

MOSFET 2N-CH 20V 2.5A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock5,456
APTM50HM38FG
Microsemi Corporation

MOSFET 4N-CH 500V 90A SP6

Package: SP6

Stock2,592
GWM180-004X2-SLSAM
IXYS

MOSFET 6N-CH 40V 180A 17-SMD

Package: 17-SMD, Flat Leads

Stock4,688
TC8020K6-G-M937
Microchip Technology

MOSFET 6N/6P-CH 200V 56VQFN

Package: 56-VFQFN Exposed Pad

Stock6,304
TD9944TG-G
Microchip Technology

MOSFET 2N-CH 240V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,440
SI1967DH-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 1.3A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock364,476
SI7272DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 25A PPAK SO-8

Package: PowerPAK? SO-8 Dual

Stock96,456
ALD110904SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,360
PMDPB56XNEAX
Nexperia USA Inc.

MOSFET ARRAY 2NCH 30V DFN2020D-6

Package: 6-UDFN Exposed Pad

Stock25,632
PMDXB550UNEZ
Nexperia USA Inc.

MOSFET 2N-CH 30V 0.59A 6DFN

Package: 6-XFDFN Exposed Pad

Stock39,966
2N7002PS,125
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

Package: 6-TSSOP, SC-88, SOT-363

Stock43,296
ALD1106SBL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 14SOIC

Package: 14-SOIC (0.154", 3.90mm Width)

Stock34,962
DMP31D1UVT-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

Package: -

Request a Quote
SIZ998BDT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 23.7A 8PWRPAIR

Package: -

Stock53,151
PJQ5846-AU_R2_000A1
Panjit International Inc.

MOSFET 2N-CH 40V 9.5A/40A 8DFN

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF9389PBF	Infineon Technologies	MOSFET N/P-CH 30V 6.8A/4.6A 8-SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,216	Logic Level Gate	30V	6.8A, 4.6A	27 mOhm @ 6.8A, 10V	2.3V @ 10µA	14nC @ 10V	398pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTLUD3191PZTBG	ON Semiconductor	MOSFET 2P-CH 20V 1.1A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-UDFN (1.6x1.6)	Package: 6-UFDFN Exposed Pad	Stock3,520	Logic Level Gate	20V	1.1A	250 mOhm @ 1.5A, 4.5V	1V @ 250µA	3.5nC @ 4.5V	160pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-UDFN (1.6x1.6)
SI4952DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V Power - Max: 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock473,688	Logic Level Gate	25V	8A	23 mOhm @ 7A, 10V	2.2V @ 250µA	18nC @ 10V	680pF @ 13V	2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTHD3100CT3	ON Semiconductor	MOSFET N/P-CH 20V CHIPFET FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	Package: 8-SMD, Flat Lead	Stock4,640	Logic Level Gate	20V	2.9A, 3.2A	80 mOhm @ 2.9A, 4.5V	1.2V @ 250µA	2.3nC @ 4.5V	165pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
TPCF8402(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V 4A/3.2A VS-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.2A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V Power - Max: 330mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: VS-8 (2.9x1.5)	Package: 8-SMD, Flat Lead	Stock4,704	Logic Level Gate	30V	4A, 3.2A	50 mOhm @ 2A, 10V	2V @ 1mA	10nC @ 10V	470pF @ 10V	330mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	VS-8 (2.9x1.5)
BSL205NH6327XTSA1	Infineon Technologies	MOSFET 2N-CH 20V 2.5A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock5,456	Logic Level Gate, 4.5V Drive	20V	2.5A	50 mOhm @ 2.5A, 4.5V	1.2V @ 11µA	3.2nC @ 4.5V	419pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
APTM50HM38FG	Microsemi Corporation	MOSFET 4N-CH 500V 90A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	Package: SP6	Stock2,592	Standard	500V	90A	45 mOhm @ 45A, 10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
GWM180-004X2-SLSAM	IXYS	MOSFET 6N-CH 40V 180A 17-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	Package: 17-SMD, Flat Leads	Stock4,688	Standard	40V	180A	2.5 mOhm @ 100A, 10V	4.5V @ 1mA	110nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
TC8020K6-G-M937	Microchip Technology	MOSFET 6N/6P-CH 200V 56VQFN FET Type: 6 N and 6 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Supplier Device Package: 56-QFN (8x8)	Package: 56-VFQFN Exposed Pad	Stock6,304	Standard	200V	-	8 Ohm @ 1A, 10V	2.4V @ 1mA	-	50pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	56-VFQFN Exposed Pad	56-QFN (8x8)
TD9944TG-G	Microchip Technology	MOSFET 2N-CH 240V 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,440	Standard	240V	-	6 Ohm @ 500mA, 10V	2V @ 1mA	-	125pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI1967DH-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 1.3A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Package: 6-TSSOP, SC-88, SOT-363	Stock364,476	Logic Level Gate	20V	1.3A	490 mOhm @ 910mA, 4.5V	1V @ 250µA	4nC @ 8V	110pF @ 10V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI7272DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 25A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Power - Max: 22W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Package: PowerPAK? SO-8 Dual	Stock96,456	Logic Level Gate	30V	25A	9.3 mOhm @ 15A, 10V	2.5V @ 250µA	26nC @ 10V	1100pF @ 15V	22W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
ALD110904SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.4V Vgs(th) (Max) @ Id: 420mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,360	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.4V	420mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
PMDPB56XNEAX	Nexperia USA Inc.	MOSFET ARRAY 2NCH 30V DFN2020D-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V Power - Max: 485mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020D-6	Package: 6-UDFN Exposed Pad	Stock25,632	Standard	30V	3.1A (Ta)	72 mOhm @ 3.1A, 4.5V	1.25V @ 250µA	5nC @ 4.5V	256pF @ 15V	485mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020D-6
PMDXB550UNEZ	Nexperia USA Inc.	MOSFET 2N-CH 30V 0.59A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA Rds On (Max) @ Id, Vgs: 670 mOhm @ 590mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V Power - Max: 285mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	Package: 6-XFDFN Exposed Pad	Stock39,966	Standard	30V	590mA	670 mOhm @ 590mA, 4.5V	950mV @ 250µA	1.05nC @ 4.5V	30.3pF @ 15V	285mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
2N7002PS,125	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.32A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 420mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: 6-TSSOP, SC-88, SOT-363	Stock43,296	Logic Level Gate	60V	320mA	1.6 Ohm @ 500mA, 10V	2.4V @ 250µA	0.8nC @ 4.5V	50pF @ 10V	420mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
ALD1106SBL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 14SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	Package: 14-SOIC (0.154", 3.90mm Width)	Stock34,962	Standard	10.6V	-	500 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
DMP31D1UVT-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Request a Quote	-	30V	760mA (Ta)	1Ohm @ 400mA, 4.5V	1.1V @ 250µA	1.6nC @ 8V	54pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
SIZ998BDT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 23.7A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	Package: -	Stock53,151	-	30V	23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)	4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V	2.2V @ 250µA	18nC @ 10V, 46.7nC @ 10V	790pF @ 15V, 2130pF @ 15V	3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
PJQ5846-AU_R2_000A1	Panjit International Inc.	MOSFET 2N-CH 40V 9.5A/40A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V Power - Max: 2W (Ta), 38.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	Package: -	Request a Quote	-	40V	9.5A (Ta), 40A (Tc)	10.5mOhm @ 8A, 10V	2.5V @ 250µA	22nC @ 10V	1258pF @ 25V	2W (Ta), 38.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8
TQM076NH04DCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 40V 15A/40A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V Power - Max: 55.6W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	Package: -	Stock14,985	-	40V	15A (Ta), 40A (Tc)	7.6mOhm @ 20A, 10V	3.6V @ 250µA	29nC @ 10V	1850pF @ 25V	55.6W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFNU (5x6)
HP8KB6TB1	Rohm Semiconductor	40V 24A, DUAL NCH+NCH, HSOP8, PO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Power - Max: 3W (Ta), 21W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	Package: -	Stock7,500	-	40V	10.5A (Ta), 24A (Tc)	15.7mOhm @ 10.5A, 10V	2.5V @ 1mA	10.6nC @ 10V	530pF @ 20V	3W (Ta), 21W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
FDMS1D2N03DSD	onsemi	MOSFET 2N-CH 30V 19A/70A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc) Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 15V, 4860pF @ 15V Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (5x6)	Package: -	Request a Quote	-	30V	19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)	3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V	2.5V @ 320µA, 3V @ 1mA	33nC @ 10V, 117nC @ 10V	1410pF @ 15V, 4860pF @ 15V	2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PQFN (5x6)
DMN10H6D2LFDB-7	Diodes Incorporated	MOSFET 2N-CH 100V 0.27A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: -	Request a Quote	-	100V	270mA (Ta)	6Ohm @ 190mA, 10V	2V @ 1mA	1.2nC @ 10V	41pF @ 50V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SQ4917CEY-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 60V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V Power - Max: 5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Stock10,995	-	60V	8A (Tc)	48mOhm @ 4.3A, 10V	2.5V @ 250µA	65nC @ 10V	1910pF @ 30V	5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MCB40P1200LB-TRR	IXYS	SIC 2N-CH 1200V 58A 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 58A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	Package: -	Request a Quote	-	1200V (1.2kV)	58A	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
G180C06Y	Goford Semiconductor	MOSFET N/P-CH 60V 50A TO252-4 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V, 62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2429pF @ 30V, 4471pF @ 30V Power - Max: 69W (Tc), 115W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4	Package: -	Stock5,889	-	60V	50A (Tc), 60A (Tc)	17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V	2V @ 250µA, 4V @ 250µA	39nC @ 4.5V, 62nC @ 4.5V	2429pF @ 30V, 4471pF @ 30V	69W (Tc), 115W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPAK (4 Leads + Tab), TO-252AD	TO-252-4
MMDF3N04HDR2	onsemi	MOSFET 2N-CH 40V 3.4A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 80mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Power - Max: 1.39W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	Logic Level Gate	40V	3.4A	80mOhm @ 3.4A, 10V	3V @ 250µA	28nC @ 10V	900pF @ 32V	1.39W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC