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Infineon Technologies |
MOSFET 2N-CH 20V 10A/12A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A, 12A
- Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,952 |
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Logic Level Gate | 20V | 10A, 12A | 13.4 mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 5X6DFN
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
- Power - Max: 2W, 2.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-DFN (5x6)
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Package: 8-PowerWDFN |
Stock3,600 |
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Standard | 30V | 15A, 26.5A | 5.2 mOhm @ 20A, 10V | 2.3V @ 250µA | 21nC @ 10V | 1560pF @ 15V | 2W, 2.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-DFN (5x6) |
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Microsemi Corporation |
MOSFET 4P-CH 100V 0.75A MO-036AB
- FET Type: 4 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 750mA
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: MO-036AB
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Package: 14-DIP (0.300", 7.62mm) |
Stock6,504 |
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Standard | 100V | 750mA | 1.4 Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | MO-036AB |
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Vishay Siliconix |
MOSFET 2P-CH 20V 4.5A SC70-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 101 mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 7.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-70-6 Dual
- Supplier Device Package: PowerPAK? SC-70-6 Dual
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Package: PowerPAK? SC-70-6 Dual |
Stock24,000 |
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Logic Level Gate | 20V | 4.5A | 101 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 11nC @ 8V | - | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 20V 7.5A 8-TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.5A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 10V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock3,088 |
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Logic Level Gate | 20V | 7.5A | 19 mOhm @ 7.5A, 4.5V | 1.5V @ 250µA | 28nC @ 4.5V | 2152pF @ 10V | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Microsemi Corporation |
MOSFET 2N-CH 500V 180A SP6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 180A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
- Power - Max: 1250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Package: SP6 |
Stock6,032 |
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Standard | 500V | 180A | 20 mOhm @ 90A, 10V | 5V @ 10mA | 560nC @ 10V | 28000pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 3.5A 6TSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
- Power - Max: 1.15W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
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Package: SC-74, SOT-457 |
Stock360,012 |
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Logic Level Gate | 30V | 3.5A | 50 mOhm @ 3.5A, 10V | 2.5V @ 250µA | 5nC @ 10V | 210pF @ 15V | 1.15W | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP |
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Vishay Siliconix |
MOSFET N/P-CH 20V 4A 1206-8
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
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Package: 8-SMD, Flat Lead |
Stock21,960 |
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Logic Level Gate | 20V | 4A, 3.7A | 55 mOhm @ 4.3A, 4.5V | 1.5V @ 250µA | 4.2nC @ 5V | 285pF @ 10V | 3.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
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Vishay Siliconix |
MOSFET ARRAY 2N-CH 75V SO8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
- Power - Max: 34W (Tc)
- Operating Temperature: -55°C ~ 175°C (TA)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock4,848 |
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Standard | 75V | 17A (Tc) | 50 mOhm @ 3.8A, 10V | 2.5V @ 250µA | 21nC @ 10V | 790pF @ 35V | 34W (Tc) | -55°C ~ 175°C (TA) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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Diodes Incorporated |
MOSFET 2N-CH 20V 10A 6-DFN
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A
- Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V
- Power - Max: 780mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VFDFN Exposed Pad
- Supplier Device Package: W-DFN5020-6
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Package: 6-VFDFN Exposed Pad |
Stock3,472 |
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Logic Level Gate | 20V | 10A | 11.5 mOhm @ 8.5A, 4.5V | 1.1V @ 250µA | 57.4nC @ 8V | 2607pF @ 10V | 780mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VFDFN Exposed Pad | W-DFN5020-6 |
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Rohm Semiconductor |
MOSFET 2N-CH 50V 0.2A UMT6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 0.9V Drive
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 200mA
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
- Power - Max: 120mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock9,108 |
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Logic Level Gate, 0.9V Drive | 50V | 200mA | 2.2 Ohm @ 200mA, 4.5V | 800mV @ 1mA | - | 26pF @ 10V | 120mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | UMT6 |
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Infineon Technologies |
MOSFET 2N-CH 30V 8A 8DSO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.3A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock17,088 |
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Logic Level Gate | 30V | 8A | 15 mOhm @ 9.3A, 10V | 2V @ 250µA | 17nC @ 10V | 1300pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Vishay Siliconix |
MOSFET 2N-CH 60V 3.4A 1212-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.4A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? 1212-8 Dual
- Supplier Device Package: PowerPAK? 1212-8 Dual
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Package: PowerPAK? 1212-8 Dual |
Stock282,372 |
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Logic Level Gate | 60V | 3.4A | 60 mOhm @ 4.8A, 10V | 3V @ 250µA | 20nC @ 10V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 25V SC70-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock770,712 |
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Logic Level Gate | 25V | 220mA, 410mA | 4 Ohm @ 220mA, 4.5V | 1.5V @ 250µA | 0.4nC @ 4.5V | 9.5pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
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Micro Commercial Co |
MOSFET N/P-CH 60V 4.5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
- Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.62nC @ 10V, 4.27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V, 505pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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- | 60V | 4.5A, 3.5A | 45mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V | 2.5V @ 250µA | 20.62nC @ 10V, 4.27nC @ 4.5V | 850pF @ 25V, 505pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Nuvoton Technology Corporation |
MOSFET 20V 3.4A 4CSP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 1.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 426pF @ 10V
- Power - Max: 420mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFLGA, CSP
- Supplier Device Package: 4-CSP (1.1x1.1)
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Package: - |
Request a Quote |
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- | 20V | 3.4A (Ta) | 32mOhm @ 1.7A, 4.5V | 1.4V @ 160µA | 4.5nC @ 4V | 426pF @ 10V | 420mW (Ta) | 150°C | Surface Mount | 4-XFLGA, CSP | 4-CSP (1.1x1.1) |
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Microchip Technology |
SIC 4N-CH 1200V 147A SP3
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 147A (Tc)
- Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs: 332nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5576pF @ 1000V
- Power - Max: 750W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 147A (Tc) | 17mOhm @ 100A, 20V | 4V @ 30mA | 332nC @ 5V | 5576pF @ 1000V | 750W | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3 |
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Diodes Incorporated |
MOSFET 2P-CH 30V 4.8A 8SO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1438pF @ 15V
- Power - Max: 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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- | 30V | 4.8A (Ta) | 48mOhm @ 5A, 10V | 1.3V @ 250µA | 13.5nC @ 4.5V | 1438pF @ 15V | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Nexperia USA Inc. |
MOSFET 40V 40A LFPAK56D
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
- Power - Max: 64W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: - |
Request a Quote |
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- | 40V | 40A (Ta) | 6.8mOhm @ 20A, 10V | 4V @ 1mA | 28.9nC @ 10V | 1947pF @ 25V | 64W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 13A/16A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
- Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
- Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN-EP (3x3)
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Package: - |
Request a Quote |
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- | 30V | 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc) | 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V | 2.2V @ 250µA | 11nC @ 10V, 17.5nC @ 10V | 485pF @ 15V, 807pF @ 15V | 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN-EP (3x3) |
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Micro Commercial Co |
MOSFET
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 30V
- Power - Max: 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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- | 60V | 3A | 105mOhm @ 3A, 10V | 1.4V @ 250µA | 6nC @ 4.5V | 247pF @ 30V | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Vishay Siliconix |
MOSFET 2P-CH 20V 4.5A SC70-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
- Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.9W (Ta), 7.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SC-70-6 Dual
- Supplier Device Package: PowerPAK® SC-70-6 Dual
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Package: - |
Request a Quote |
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- | 20V | 4.5A (Ta), 4.5A (Tc) | 54mOhm @ 3.8A, 4.5V | 1.4V @ 250µA | 25nC @ 8V | - | 1.9W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
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YAGEO XSEMI |
MOSFET N AND P-CH 30V 7.8A 5.5A
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 5.5A (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
- Power - Max: 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC
- Supplier Device Package: 8-SO
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Package: - |
Stock2,970 |
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- | 30V | 7.8A (Ta), 5.5A (Ta) | 20mOhm @ 7A, 10V | 2.2V @ 250µA | 8nC @ 4.5V | 880pF @ 15V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 4.3A MICRO8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: Micro8™
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Package: - |
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Logic Level Gate | 20V | 4.3A | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250µA | 15nC @ 5V | 1066pF @ 10V | 1.25W | - | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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Infineon Technologies |
MOSFET 2N-CH 30V 4.9A 8DSO-902
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
- Power - Max: 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-902
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Package: - |
Stock35,955 |
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- | 30V | 4.9A (Ta) | 50mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8-902 |
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Panjit International Inc. |
MOSFET 2N-CH 20V 0.75A SOT23-6
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
- Power - Max: 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: - |
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- | 20V | 750mA (Ta) | 400mOhm @ 600mA, 4.5V | 900mV @ 250µA | 1.4nC @ 4.5V | 67pF @ 10V | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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onsemi |
MOSFET 2N-CH 6WLCSP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.8W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: 6-WLCSP (2x1.49)
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Package: - |
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- | - | - | - | 1.3V @ 1mA | 37nC @ 4.5V | - | 1.8W (Ta) | 150°C (TJ) | Surface Mount | 6-SMD, No Lead | 6-WLCSP (2x1.49) |
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Renesas Electronics Corporation |
MOSFET 2N-CH 30V 7.5A/8A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Ta)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V, 1330pF @ 10V
- Power - Max: 1.5W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Request a Quote |
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Logic Level Gate, 4.5V Drive | 30V | 7.5A (Ta), 8A (Ta) | 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V | 2.5V @ 1mA | 4.6nC @ 4.5V, 11nC @ 4.5V | 630pF @ 10V, 1330pF @ 10V | 1.5W (Ta) | 150°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |