Page 29 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

UPA2672T1R-E2-AX
Renesas Electronics America

MOSFET 2P-CH 12V 4A 6HUSON

Package: 6-WFDFN Exposed Pad

Stock7,648
SI7901EDN-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.3A 1212-8

Package: PowerPAK? 1212-8 Dual

Stock6,448
NTMD6601NR2G
ON Semiconductor

MOSFET 2N-CH 80V 1.1A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock8,760
NTZD3156CT5G
ON Semiconductor

MOSFET N/P-CH 20V SOT-563

Package: SOT-563, SOT-666

Stock7,600
HUFA76413DK8T
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 5.1A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock993,996
APTML202UM18R010T3AG
Microsemi Corporation

MOSFET 2N-CH 200V 109A SP3

Package: SP3

Stock5,120
ALD1108ESCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10V 16SOIC

Package: 16-SOIC (0.154", 3.90mm Width)

Stock2,080
NVMFD5489NLWFT1G
ON Semiconductor

MOSFET 2N-CH 60V 4.5A DFN8

Package: 8-PowerTDFN

Stock7,776
SI6975DQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 4.3A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock2,432
FDMD8540L
Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 33A POWER

Package: 8-PowerWDFN

Stock5,632
DMC1018UPD-13
Diodes Incorporated

MOSFET N/P-CH 12V POWERDI5060

Package: 8-PowerTDFN

Stock2,352
SP8K3TB
Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,031,220
AO4630
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,616
DMN2040LTS-13
Diodes Incorporated

MOSFET 2N-CH 20V 6.7A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock50,520
DMG1016UDW-7
Diodes Incorporated

MOSFET N/P-CH 20V SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock36,000
AO4614BL_201
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 6A/5A 8SOIC

Package: -

Request a Quote
SCH2401-TL-E
onsemi

NCH+NCH 2.5V DRIVE SERIES

Package: -

Request a Quote
DMP22D4UDA-7B
Diodes Incorporated

MOSFET 2P-CH 20V 0.328A 6DFN

Package: -

Request a Quote
BSS138DWK-13
Diodes Incorporated

MOSFET 2N-CH 50V 0.31A SOT363

Package: -

Request a Quote
AOC2870
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 4DFN

Package: -

Stock9,000

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
UPA2672T1R-E2-AX	Renesas Electronics America	MOSFET 2P-CH 12V 4A 6HUSON FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 67 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V Power - Max: 2.3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	Package: 6-WFDFN Exposed Pad	Stock7,648	Logic Level Gate, 1.8V Drive	12V	4A	67 mOhm @ 2A, 4.5V	-	5nC @ 4.5V	486pF @ 10V	2.3W	150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-HUSON (2x2)
SI7901EDN-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.3A 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	Package: PowerPAK? 1212-8 Dual	Stock6,448	Logic Level Gate	20V	4.3A	48 mOhm @ 6.3A, 4.5V	1V @ 800µA	18nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
NTMD6601NR2G	ON Semiconductor	MOSFET 2N-CH 80V 1.1A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 215 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock8,760	Logic Level Gate	80V	1.1A	215 mOhm @ 2.2A, 10V	3V @ 250µA	15nC @ 10V	400pF @ 25V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTZD3156CT5G	ON Semiconductor	MOSFET N/P-CH 20V SOT-563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock7,600	Logic Level Gate	20V	540mA, 430mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	72pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
HUFA76413DK8T	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 5.1A 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock993,996	Logic Level Gate	60V	5.1A	49 mOhm @ 5.1A, 10V	3V @ 250µA	23nC @ 10V	620pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTML202UM18R010T3AG	Microsemi Corporation	MOSFET 2N-CH 200V 109A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 109A (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9880pF @ 25V Power - Max: 480W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock5,120	Standard	200V	109A (Tc)	19 mOhm @ 50A, 10V	4V @ 2.5mA	-	9880pF @ 25V	480W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
ALD1108ESCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1.01V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 5V Power - Max: 600mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	Package: 16-SOIC (0.154", 3.90mm Width)	Stock2,080	Standard	10V	-	500 Ohm @ 5V	1.01V @ 1µA	-	25pF @ 5V	600mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
NVMFD5489NLWFT1G	ON Semiconductor	MOSFET 2N-CH 60V 4.5A DFN8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	Package: 8-PowerTDFN	Stock7,776	Logic Level Gate	60V	4.5A	65 mOhm @ 15A, 10V	2.5V @ 250µA	12.4nC @ 10V	330pF @ 25V	3W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
SI6975DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.3A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 5mA (Min) Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock2,432	Logic Level Gate	12V	4.3A	27 mOhm @ 5.1A, 4.5V	450mV @ 5mA (Min)	30nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDMD8540L	Fairchild/ON Semiconductor	MOSFET 2N-CH 40V 33A POWER FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 33A, 156A Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7940pF @ 20V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	Package: 8-PowerWDFN	Stock5,632	Standard	40V	33A, 156A	1.5 mOhm @ 33A, 10V	3V @ 250µA	113nC @ 10V	7940pF @ 20V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6
DMC1018UPD-13	Diodes Incorporated	MOSFET N/P-CH 12V POWERDI5060 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	Package: 8-PowerTDFN	Stock2,352	Standard	12V, 20V	9.5A, 6.9A	17 mOhm @ 11.8A, 4.5V	1.5V @ 250µA	30.4nC @ 8V	1525pF @ 6V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
SP8K3TB	Rohm Semiconductor	MOSFET 2N-CH 30V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,031,220	Logic Level Gate	30V	7A	24 mOhm @ 7A, 10V	2.5V @ 1mA	11.8nC @ 5V	600pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AO4630	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel Complementary FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 7A Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,616	-	30V	5A, 7A	28 mOhm @ 7A, 10V	1.45V @ 250µA	20nC @ 10V	670pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN2040LTS-13	Diodes Incorporated	MOSFET 2N-CH 20V 6.7A 8TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.7A Rds On (Max) @ Id, Vgs: 26 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V Power - Max: 890mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock50,520	Logic Level Gate	20V	6.7A	26 mOhm @ 6A, 4.5V	1.2V @ 250µA	5.2nC @ 4.5V	570pF @ 10V	890mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DMG1016UDW-7	Diodes Incorporated	MOSFET N/P-CH 20V SOT363 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.07A, 845mA Rds On (Max) @ Id, Vgs: 450 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V Power - Max: 330mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock36,000	Logic Level Gate	20V	1.07A, 845mA	450 mOhm @ 600mA, 4.5V	1V @ 250µA	0.74nC @ 4.5V	60.67pF @ 10V	330mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
AO4614BL_201	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 40V 6A/5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V, 1175pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: -	Request a Quote	-	40V	6A (Ta), 5A (Ta)	30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V	3V @ 250µA	10.8nC @ 10V, 22nC @ 10V	650pF @ 20V, 1175pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SCH2401-TL-E	onsemi	NCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMP22D4UDA-7B	Diodes Incorporated	MOSFET 2P-CH 20V 0.328A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 328mA (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 15V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	Package: -	Request a Quote	-	20V	328mA (Ta)	1.9Ohm @ 100mA, 4.5V	1V @ 250µA	0.4nC @ 4.5V	28.5pF @ 15V	310mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6
BSS138DWK-13	Diodes Incorporated	MOSFET 2N-CH 50V 0.31A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 2.6Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 330mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Request a Quote	-	50V	310mA (Ta)	2.6Ohm @ 200mA, 10V	1.5V @ 250µA	0.8nC @ 10V	22pF @ 25V	330mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
AOC2870	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 4DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XDFN Supplier Device Package: 4-DFN (1.7x1.7)	Package: -	Stock9,000	-	-	-	-	1.3V @ 250µA	11.5nC @ 4.5V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	4-XDFN	4-DFN (1.7x1.7)
DMT47M2LDVQ-13	Diodes Incorporated	MOSFET 2N-CH 40V 11.9A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V Power - Max: 2.34W (Ta), 14.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	Package: -	Stock9,000	-	40V	11.9A (Ta), 30.2A (Tc)	10.8mOhm @ 20A, 10V	2.3V @ 250µA	14nC @ 10V	891pF @ 20V	2.34W (Ta), 14.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
SP8M41HZGTB	Rohm Semiconductor	MOSFET N/P-CH 80V 3.4A/2.6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Stock6,426	-	80V	3.4A (Ta), 2.6A (Ta)	130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V	2.5V @ 1mA	9.2nC @ 5V, 11.5nC @ 5V	600pF @ 10V, 1000pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FBG30N04CSH	EPC Space, LLC	GANFET 2N-CH 300V 4A 4SMD FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V Vgs(th) (Max) @ Id: 2.8V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 150V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: 4-SMD	Package: -	Stock150	-	300V	4A (Tc)	404mOhm @ 4A, 5V	2.8V @ 600µA	2.6nC @ 5V	450pF @ 150V	-	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, No Lead	4-SMD
UPA2352T1P-E4-A	Renesas Electronics Corporation	MOSFET 2N-CH 24V 4A LGA FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V Power - Max: 750mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-XFLGA Supplier Device Package: 4-EFLIP-LGA (1.4x1.4)	Package: -	Request a Quote	Logic Level Gate, 2.5V Drive	24V	4A (Ta)	43mOhm @ 2A, 4.5V	1.5V @ 1mA	5.7nC @ 4V	330pF @ 10V	750mW (Ta)	150°C	Surface Mount	4-XFLGA	4-EFLIP-LGA (1.4x1.4)
TQM300NB06DCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 60V 6A/25A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Power - Max: 2.5W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	Package: -	Stock15,000	-	60V	6A (Ta), 25A (Tc)	30mOhm @ 6A, 10V	3.8V @ 250µA	20nC @ 10V	1020pF @ 30V	2.5W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	8-PDFNU (5x6)
CSD86356Q5D	Texas Instruments	MOSFET 25V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMP2110UVT-13	Diodes Incorporated	MOSFET 2P-CH 20V 1.8A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V Power - Max: 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	Package: -	Request a Quote	-	20V	1.8A (Ta)	150mOhm @ 2.8A, 4.5V	1V @ 250µA	6nC @ 4.5V	443pF @ 6V	740mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
AON5802BL	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 7.2A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-DFN-EP (2x5)	Package: -	Request a Quote	-	30V	7.2A (Tc)	19mOhm @ 7A, 4.5V	1.5V @ 250µA	24nC @ 10V	1150pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-DFN-EP (2x5)