Page 70 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

APTM120VDA57T3G
Microsemi Corporation

MOSFET 2N-CH 1200V 17A SP3

Package: SP3

Stock5,264
SP8M5FU6TB
Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,328
FD6M016N03
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 80A EPM15

Package: EPM15

Stock7,680
TPCF8201(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 3A VS-8

Package: 8-SMD, Flat Lead

Stock6,416
IPG16N10S461AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

Package: 8-PowerVDFN

Stock6,592
ALD212914SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,672
DMC1029UFDB-13
Diodes Incorporated

MOSFET N/P-CH 12V 6UDFN

Package: 6-UDFN Exposed Pad

Stock6,064
CSD83325LT
Texas Instruments

MOSFET 2N-CH 12V 52A 6PICOSTAR

Package: 6-XFBGA

Stock2,256
ZXMC3A16DN8TC
Diodes Incorporated

MOSFET N/P-CH 30V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock419,724
CSD87335Q3DT
Texas Instruments

MOSFET 2N-CH 30V 25A

Package: 8-PowerLDFN

Stock15,528
SLA5060
Sanken

MOSFET 3N/3P-CH 60V 6A 12-SIP

Package: 12-SIP

Stock44,916
STS8DN3LLH5
STMicroelectronics

MOSFET 2N-CH 30V 10A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock508,416
SQ4940AEY-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,072
DMC1016UPD-13
Diodes Incorporated

MOSFET 8V 24V POWERDI5060-8

Package: 8-PowerTDFN

Stock7,184
CSD85301Q2
Texas Instruments

MOSFET 2N-CH 20V 5A 6WSON

Package: 6-WDFN Exposed Pad

Stock5,952
FDG6318PZ
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.5A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock285,048
IRF7509TRPBF
Infineon Technologies

MOSFET N/P-CH 30V 2.7A/2A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock105,324
BSS84AKS,115
Nexperia USA Inc.

MOSFET 2P-CH 50V 0.16A 6TSSOP

Package: 6-TSSOP, SC-88, SOT-363

Stock2,608
MCQD04N06-TP
Micro Commercial Co

MOSFET

Package: -

Request a Quote
QS6K21FRATR
Rohm Semiconductor

MOSFET 2N-CH 45V 1A TSMT6

Package: -

Stock18,981

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
APTM120VDA57T3G	Microsemi Corporation	MOSFET 2N-CH 1200V 17A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Package: SP3	Stock5,264	Standard	1200V (1.2kV)	17A	684 mOhm @ 8.5A, 10V	5V @ 2.5mA	187nC @ 10V	5155pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SP8M5FU6TB	Rohm Semiconductor	MOSFET N/P-CH 30V 6A/7A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 7A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,328	Logic Level Gate	30V	6A, 7A	28 mOhm @ 6A, 10V	2.5V @ 1mA	10.1nC @ 5V	520pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FD6M016N03	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 80A EPM15 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: EPM15 Supplier Device Package: EPM15	Package: EPM15	Stock7,680	Standard	30V	80A	1.6 mOhm @ 40A, 10V	3V @ 250µA	295nC @ 10V	11535pF @ 15V	-	-40°C ~ 150°C (TJ)	Through Hole	EPM15	EPM15
TPCF8201(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 3A VS-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V Power - Max: 330mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: VS-8 (2.9x1.5)	Package: 8-SMD, Flat Lead	Stock6,416	Logic Level Gate	20V	3A	49 mOhm @ 1.5A, 4.5V	1.2V @ 200µA	7.5nC @ 5V	590pF @ 10V	330mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	VS-8 (2.9x1.5)
IPG16N10S461AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 61 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3.5V @ 9µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Power - Max: 29W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	Package: 8-PowerVDFN	Stock6,592	Standard	100V	16A	61 mOhm @ 16A, 10V	3.5V @ 9µA	7nC @ 10V	490pF @ 25V	29W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
ALD212914SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,672	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMC1029UFDB-13	Diodes Incorporated	MOSFET N/P-CH 12V 6UDFN FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: 6-UDFN Exposed Pad	Stock6,064	Standard	12V	5.6A, 3.8A	29 mOhm @ 5A, 4.5V	1V @ 250µA	19.6nC @ 8V	914pF @ 6V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
CSD83325LT	Texas Instruments	MOSFET 2N-CH 12V 52A 6PICOSTAR FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA Supplier Device Package: 6-PicoStar	Package: 6-XFBGA	Stock2,256	Standard	-	-	-	-	10.9nC @ 4.5V	-	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	6-XFBGA	6-PicoStar
ZXMC3A16DN8TC	Diodes Incorporated	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock419,724	Logic Level Gate	30V	4.9A, 4.1A	35 mOhm @ 9A, 10V	1V @ 250µA (Min)	17.5nC @ 10V	796pF @ 25V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
CSD87335Q3DT	Texas Instruments	MOSFET 2N-CH 30V 25A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (3.3x3.3)	Package: 8-PowerLDFN	Stock15,528	Standard	30V	25A	-	1.9V @ 250µA	7.4nC @ 4.5V	1050pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (3.3x3.3)
SLA5060	Sanken	MOSFET 3N/3P-CH 60V 6A 12-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 220 mOhm @ 3A, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP Supplier Device Package: 12-SIP	Package: 12-SIP	Stock44,916	Logic Level Gate	60V	6A	220 mOhm @ 3A, 4V	-	-	320pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP	12-SIP
STS8DN3LLH5	STMicroelectronics	MOSFET 2N-CH 30V 10A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 19 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 724pF @ 25V Power - Max: 2.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock508,416	Logic Level Gate	30V	10A	19 mOhm @ 5A, 10V	1V @ 250µA	5.4nC @ 4.5V	724pF @ 25V	2.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQ4940AEY-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V Power - Max: 4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,072	Logic Level Gate	40V	8A	24 mOhm @ 5.3A, 10V	2.5V @ 250µA	43nC @ 10V	741pF @ 20V	4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMC1016UPD-13	Diodes Incorporated	MOSFET 8V 24V POWERDI5060-8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	Package: 8-PowerTDFN	Stock7,184	Standard	12V, 20V	9.5A, 8.7A	17 mOhm @ 11.8A, 4.5V	1.5V @ 250µA	32nC @ 8V	1454pF @ 6V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
CSD85301Q2	Texas Instruments	MOSFET 2N-CH 20V 5A 6WSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WSON (2x2)	Package: 6-WDFN Exposed Pad	Stock5,952	Logic Level Gate, 5V Drive	20V	5A	27 mOhm @ 5A, 4.5V	1.2V @ 250µA	5.4nC @ 4.5V	469pF @ 10V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WSON (2x2)
FDG6318PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 0.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 85.4pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Package: 6-TSSOP, SC-88, SOT-363	Stock285,048	Logic Level Gate	20V	500mA	780 mOhm @ 500mA, 4.5V	1.5V @ 250µA	1.62nC @ 4.5V	85.4pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
IRF7509TRPBF	Infineon Technologies	MOSFET N/P-CH 30V 2.7A/2A MICRO8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock105,324	Logic Level Gate	30V	2.7A, 2A	110 mOhm @ 1.7A, 10V	1V @ 250µA	12nC @ 10V	210pF @ 25V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
BSS84AKS,115	Nexperia USA Inc.	MOSFET 2P-CH 50V 0.16A 6TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 160mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Power - Max: 445mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: 6-TSSOP, SC-88, SOT-363	Stock2,608	Logic Level Gate	50V	160mA	7.5 Ohm @ 100mA, 10V	2.1V @ 250µA	0.35nC @ 5V	36pF @ 25V	445mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
MCQD04N06-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 30V Power - Max: 1.7W (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: -	Request a Quote	-	60V	4A (Ta)	75mOhm @ 4A, 10V	2V @ 250µA	9nC @ 10V	400pF @ 30V	1.7W (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
QS6K21FRATR	Rohm Semiconductor	MOSFET 2N-CH 45V 1A TSMT6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 420mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V Power - Max: 950mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSMT6 (SC-95)	Package: -	Stock18,981	-	45V	1A (Ta)	420mOhm @ 1A, 4.5V	1.5V @ 1mA	2.1nC @ 4.5V	95pF @ 10V	950mW (Ta)	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSMT6 (SC-95)
UFB25SC12E1BC3N	Qorvo	1200V/25A,SIC,FULL-BRIDGE,G3,E1B FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NVMJD4D7N04CLTWG	onsemi	MOSFET N-CH 40V LFPAK56 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
GCMX020A120B3H1P	SemiQ	SIC 1200V 20M MOSFET FULL-BRIDGE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 800V Power - Max: 300W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock30	-	1200V (1.2kV)	93A (Tc)	28mOhm @ 50A, 20V	4V @ 20mA	250nC @ 20V	6700pF @ 800V	300W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
PSMN8R0-40HLX	Nexperia USA Inc.	MOSFET 2N-CH 40V 30A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Power - Max: 53W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Package: -	Stock4,800	Logic Level Gate	40V	30A (Ta)	9.4mOhm @ 10A, 5V	2.1V @ 1mA	15.7nC @ 5V	2110pF @ 25V	53W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
CAB400M12XM3	Wolfspeed, Inc.	MOSFET 2 N-CH 1200V MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 395A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V Vgs(th) (Max) @ Id: 3.6V @ 92mA Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Stock24	-	1200V (1.2kV)	395A (Tc)	5.3mOhm @ 400A, 15V	3.6V @ 92mA	908nC @ 15V	2450pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SIZF5302DT-T1-RE3	Vishay Siliconix	MOSFET 2N-CH 30V 28.1A PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Power - Max: 3.8W (Ta), 48.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerPair™ Supplier Device Package: PowerPAIR® 3x3FS	Package: -	Stock15,843	-	30V	28.1A (Ta), 100A (Tc)	3.2mOhm @ 10A, 10V	2V @ 250µA	22.2nC @ 10V	1030pF @ 15V	3.8W (Ta), 48.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerPair™	PowerPAIR® 3x3FS
IRLHS6276TR2PBF	Infineon Technologies	MOSFET 2N-CH 20V 4.5A PQFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 1.5W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-PowerVDFN Supplier Device Package: 6-PQFN Dual (2x2)	Package: -	Request a Quote	Logic Level Gate	20V	4.5A	45mOhm @ 3.4A, 4.5V	1.1V @ 10µA	3.1nC @ 4.5V	310pF @ 10V	1.5W	-	Surface Mount	6-PowerVDFN	6-PQFN Dual (2x2)
PJQ5850_R2_00001	Panjit International Inc.	MOSFET 2N-CH 40V 5A/14A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V Power - Max: 1.7W (Ta), 12W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	Package: -	Request a Quote	-	40V	5A (Ta), 14A (Tc)	33mOhm @ 8A, 10V	2.5V @ 250µA	4.4nC @ 4.5V	425pF @ 25V	1.7W (Ta), 12W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8