Page 73 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

IRF7756GTRPBF
Infineon Technologies

MOSFET 2P-CH 12V 4.3A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock5,488
AO6804A_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 5A 6TSOP

Package: SC-74, SOT-457

Stock2,816
MCH6605-TL-E
ON Semiconductor

MOSFET 2P-CH 50V 0.14A MCPH6

Package: 6-SMD, Flat Leads

Stock7,728
SI3529DV-T1-E3
Vishay Siliconix

MOSFET N/P-CH 40V 2.5A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock5,696
SI5904DC-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 3.1A 1206-8

Package: 8-SMD, Flat Lead

Stock324,012
CSD75204W15
Texas Instruments

MOSFET 2P-CH 3A 9DSBGA

Package: 9-UFBGA, DSBGA

Stock3,120
SSD2007ATF
Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock436,680
FDW9926NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 4.5A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock30,000
ALD114904APAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

Package: 8-DIP (0.300", 7.62mm)

Stock2,672
ALD110908SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,904
FDS6984AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock352,716
FDS8960C
Fairchild/ON Semiconductor

MOSFET N/P-CH 35V 7A/5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock16,800
PMDXB950UPELZ
Nexperia USA Inc.

20 V, DUAL P-CHANNEL TRENCH MOSF

Package: 6-XFDFN Exposed Pad

Stock6,400
DMG1023UV-7
Diodes Incorporated

MOSFET 2P-CH 20V 1.03A SOT563

Package: SOT-563, SOT-666

Stock87,162
DMC2400UVQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT563 T&R

Package: -

Request a Quote
ZXMP6A17DN8QTC
Diodes Incorporated

MOSFET 2P-CH 60V 2.7A 8SO

Package: -

Request a Quote
SQJ942EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 15A PPAK SO8

Package: -

Stock9,000
SIZF920DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 28A 8POWERPAIR

Package: -

Stock6,633
DF11MR12W1M1B11BOMA1
Infineon Technologies

SIC 2N-CH 1200V AG-EASY1BM-2

Package: -

Request a Quote
OP529-005
WeEn Semiconductors

MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7756GTRPBF	Infineon Technologies	MOSFET 2P-CH 12V 4.3A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock5,488	Logic Level Gate	12V	4.3A	40 mOhm @ 4.3A, 4.5V	900mV @ 250µA	18nC @ 4.5V	1400pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AO6804A_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 5A 6TSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 10V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	Package: SC-74, SOT-457	Stock2,816	Logic Level Gate	20V	5A	28 mOhm @ 5A, 4.5V	1V @ 250µA	7.5nC @ 4.5V	225pF @ 10V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
MCH6605-TL-E	ON Semiconductor	MOSFET 2P-CH 50V 0.14A MCPH6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 140mA Rds On (Max) @ Id, Vgs: 22 Ohm @ 40mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6.2pF @ 10V Power - Max: 800mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-MCPH	Package: 6-SMD, Flat Leads	Stock7,728	Logic Level Gate, 4V Drive	50V	140mA	22 Ohm @ 40mA, 10V	-	1.32nC @ 10V	6.2pF @ 10V	800mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	6-MCPH
SI3529DV-T1-E3	Vishay Siliconix	MOSFET N/P-CH 40V 2.5A 6-TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Package: SOT-23-6 Thin, TSOT-23-6	Stock5,696	Logic Level Gate	40V	2.5A, 1.95A	125 mOhm @ 2.2A, 10V	3V @ 250µA	7nC @ 10V	205pF @ 20V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI5904DC-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 3.1A 1206-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	Package: 8-SMD, Flat Lead	Stock324,012	Logic Level Gate	20V	3.1A	75 mOhm @ 3.1A, 4.5V	1.5V @ 250µA	6nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
CSD75204W15	Texas Instruments	MOSFET 2P-CH 3A 9DSBGA FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-UFBGA, DSBGA Supplier Device Package: 9-DSBGA	Package: 9-UFBGA, DSBGA	Stock3,120	Logic Level Gate	-	3A	-	900mV @ 250µA	3.9nC @ 4.5V	410pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	9-UFBGA, DSBGA	9-DSBGA
SSD2007ATF	Fairchild/ON Semiconductor	MOSFET 2N-CH 50V 2A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Package: 8-SOIC (0.154", 3.90mm Width)	Stock436,680	Logic Level Gate	50V	2A	300 mOhm @ 1.5A, 10V	4V @ 250µA	15nC @ 10V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDW9926NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 4.5A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock30,000	Logic Level Gate	20V	4.5A	32 mOhm @ 4.5A, 4.5V	1.5V @ 250µA	8nC @ 4.5V	600pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
ALD114904APAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V Vgs(th) (Max) @ Id: 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	Package: 8-DIP (0.300", 7.62mm)	Stock2,672	Depletion Mode	10.6V	12mA, 3mA	500 Ohm @ 3.6V	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
ALD110908SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V Vgs(th) (Max) @ Id: 820mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,904	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.8V	820mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDS6984AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 8.5A Rds On (Max) @ Id, Vgs: 31 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock352,716	Logic Level Gate	30V	5.5A, 8.5A	31 mOhm @ 5.5A, 10V	3V @ 250µA	11nC @ 10V	420pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS8960C	Fairchild/ON Semiconductor	MOSFET N/P-CH 35V 7A/5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 7A, 5A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock16,800	Logic Level Gate	35V	7A, 5A	24 mOhm @ 7A, 10V	3V @ 250µA	7.7nC @ 5V	570pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMDXB950UPELZ	Nexperia USA Inc.	20 V, DUAL P-CHANNEL TRENCH MOSF FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 380mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	Package: 6-XFDFN Exposed Pad	Stock6,400	Standard	20V	500mA	1.4 Ohm @ 500mA, 4.5V	950mV @ 250µA	2.1nC @ 4.5V	43pF @ 10V	380mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
DMG1023UV-7	Diodes Incorporated	MOSFET 2P-CH 20V 1.03A SOT563 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A Rds On (Max) @ Id, Vgs: 750 mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V Power - Max: 530mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock87,162	Logic Level Gate	20V	1.03A	750 mOhm @ 430mA, 4.5V	1V @ 250µA	0.62nC @ 4.5V	59.76pF @ 16V	530mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMC2400UVQ-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta), 700mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V, 46.1pF @ 10V Power - Max: 450mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	-	20V	1.03A (Ta), 700mA (Ta)	480mOhm @ 200mA, 5V, 970mOhm @ 100mA, 5V	900mV @ 250µA, 1V @ 250µA	0.5nC @ 4.5V	37.1pF @ 10V, 46.1pF @ 10V	450mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
ZXMP6A17DN8QTC	Diodes Incorporated	MOSFET 2P-CH 60V 2.7A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	-	60V	2.7A (Ta)	125mOhm @ 2.3A, 10V	1V @ 250µA	17.7nC @ 10V	637pF @ 30V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ942EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 15A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 45A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V, 33.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 809pF @ 20V, 1451pF @ 20V Power - Max: 17W, 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	Package: -	Stock9,000	-	40V	15A (Tc), 45A (Tc)	22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V	2.3V @ 250µA	19.7nC @ 10V, 33.8nC @ 10V	809pF @ 20V, 1451pF @ 20V	17W, 48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIZF920DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 28A 8POWERPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	Package: -	Stock6,633	-	30V	28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)	3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V	2.4V @ 250µA, 2.2V @ 250µA	29nC @ 10V, 125nC @ 10V	1300pF @ 15V, 5230pF @ 15V	3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
DF11MR12W1M1B11BOMA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1BM-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 5.5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1BM-2	Package: -	Request a Quote	-	1200V (1.2kV)	50A	23mOhm @ 50A, 15V	5.5V @ 20mA	125nC @ 5V	3950pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1BM-2
OP529-005	WeEn Semiconductors	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NVMFWD020N06CT1G	onsemi	MOSFET 2N-CH 60V 8A/27A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 30V Power - Max: 3.1W (Ta), 31W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Package: -	Request a Quote	-	60V	8A (Ta), 27A (Tc)	20.3mOhm @ 4A, 10V	4V @ 20µA	5.8nC @ 10V	355pF @ 30V	3.1W (Ta), 31W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
WAB300M12BM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 382A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 382A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 300A, 15V Vgs(th) (Max) @ Id: 3.6V @ 92mA Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 24500pF @ 1000V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Package: -	Request a Quote	-	1200V (1.2kV)	382A (Tc)	5.2mOhm @ 300A, 15V	3.6V @ 92mA	908nC @ 15V	24500pF @ 1000V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
CMLDM3757-TR-PBFREE	Central Semiconductor Corp	MOSFET N/P-CH 20V SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Stock71,025	Logic Level Gate	20V	540mA, 430mA	550mOhm @ 540mA, 4.5V	1V @ 250µA	1.58nC @ 4.5V	150pF @ 16V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN33D9LV-7A	Diodes Incorporated	MOSFET 2N-CH 30V 0.35A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 430mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Stock8,700	-	30V	350mA (Ta)	2.4Ohm @ 250mA, 10V	1.4V @ 100µA	1.23nC @ 10V	48pF @ 5V	430mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
MSCSM120HM063CAG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN62D2UDWQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Request a Quote	-	60V	340mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MSCSM170TLM45C3AG	Microchip Technology	SIC 4N-CH 1700V 64A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Power - Max: 319W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	Package: -	Request a Quote	-	1700V (1.7kV)	64A (Tc)	45mOhm @ 30A, 20V	3.2V @ 2.5mA	178nC @ 20V	3300pF @ 1000V	319W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
DMT3009LEV-13	Diodes Incorporated	MOSFET 25V-30V POWERDI3333-8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-