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Infineon Technologies |
MOSFET 2N-CH 20V 1.5A 6TSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock2,480 |
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Logic Level Gate | 20V | 1.5A | 140 mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 8A
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,352 |
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Standard | 30V | 8A | 19 mOhm @ 8A, 10V | 2.4V @ 250µA | 18nC @ 10V | 888pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET N/P-CH 20V 2.9A 6-TSOP
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock1,327,392 |
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Logic Level Gate | 20V | 2.9A, 2.1A | 60 mOhm @ 3.4A, 4.5V | 1.1V @ 250µA | 6nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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ON Semiconductor |
MOSFET 2P-CH 20V 2.3A 6-WDFN
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.3A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
- Power - Max: 710mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-WDFN (2x2)
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Package: 6-WDFN Exposed Pad |
Stock2,144 |
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Logic Level Gate | 20V | 2.3A | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | 531pF @ 10V | 710mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) |
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ON Semiconductor |
MOSFET 2N-CH 30V 6A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
- Power - Max: 1.29W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock582,492 |
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Logic Level Gate | 30V | 6A | 32 mOhm @ 6A, 10V | 2.5V @ 250µA | 30nC @ 10V | 950pF @ 24V | 1.29W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Rohm Semiconductor |
MOSFET 2N-CH 45V 4.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock226,836 |
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Logic Level Gate | 45V | 4.5A | 46 mOhm @ 4.5A, 10V | 2.5V @ 1mA | 9.6nC @ 5V | 550pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 13A/23A 8-PQFN
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A, 23A
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 10V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: Power56
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Package: 8-PowerTDFN |
Stock6,656 |
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Logic Level Gate | 30V | 13A, 23A | 8 mOhm @ 13A, 10V | 2.7V @ 250µA | 29nC @ 10V | 1785pF @ 10V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
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Texas Instruments |
MOSFET 2N-CH 30V 40A 8LSON
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A
- Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 20A, 8V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 15V
- Power - Max: 12W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: 8-LSON (5x6)
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Package: 8-PowerLDFN |
Stock620,472 |
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Logic Level Gate | 30V | 40A | 5.9 mOhm @ 20A, 8V | 2.1V @ 250µA | 10.9nC @ 4.5V | 1770pF @ 15V | 12W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 8-LSON (5x6) |
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Advanced Linear Devices Inc. |
QUAD P-CHANNEL EPAD MATCHED PAIR
- FET Type: 4 P-Channel, Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 780mV @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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Package: 16-DIP (0.300", 7.62mm) |
Stock6,336 |
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Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Rohm Semiconductor |
MOSFET 2N-CH 30V 9A SOP8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock66,132 |
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Logic Level Gate | 30V | 9A | 17 mOhm @ 9A, 10V | 2.5V @ 1mA | 21nC @ 5V | 1190pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 0.1A ES6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6 (1.6x1.6)
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Package: SOT-563, SOT-666 |
Stock32,976 |
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Logic Level Gate | 20V | 100mA | 8 Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
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Diodes Incorporated |
MOSFET N/P-CH 20V SOT-563
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
- Power - Max: 450mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock447,756 |
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Logic Level Gate | 20V | 670mA, 530mA | 550 mOhm @ 540mA, 4.5V | 1V @ 250µA | - | 150pF @ 16V | 450mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 1.9A SSOT6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.9A
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock515,952 |
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Logic Level Gate | 20V | 1.9A | 170 mOhm @ 1.9A, 4.5V | 1.5V @ 250µA | 4.2nC @ 4.5V | 441pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 60V 3.5A 8-SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock807,192 |
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Logic Level Gate | 60V | 3.5A | 100 mOhm @ 3.5A, 10V | 3V @ 250µA | 13nC @ 5V | 420pF @ 30V | 1W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 30V 9.5A PWRDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
- Power - Max: 2.16W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PowerDI3333-8 (Type D)
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Package: - |
Request a Quote |
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- | 30V | 9.5A (Ta), 15A (Tc) | 14.3mOhm @ 4A, 8V | 1.2V @ 250µA | 5.7nC @ 4.5V | 600pF @ 15V | 2.16W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PowerDI3333-8 (Type D) |
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Diodes Incorporated |
MOSFET 2N-CH 60V 0.23A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 310mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Stock30,000 |
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- | 60V | 230mA (Ta) | 7.5Ohm @ 50mA, 5V | 2V @ 250µA | - | 50pF @ 25V | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Fairchild Semiconductor |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Good-Ark Semiconductor |
MOSFET 2N-CH 50V 0.3A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 580nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 30V
- Power - Max: 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Stock17,334 |
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- | 50V | 300mA (Ta) | 2Ohm @ 300mA, 10V | 1.4V @ 250µA | 580nC @ 4.5V | 12pF @ 30V | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Micro Commercial Co |
MOSFET 2N-CH 20V 8A 8TSSOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: - |
Request a Quote |
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- | 20V | 8A | 13mOhm @ 8A, 10V | 1V @ 250µA | 17.9nC @ 4.5V | 1800pF @ 10V | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Taiwan Semiconductor Corporation |
MOSFET N/P-CH 60V 2.5A/5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)
- Rds On (Max) @ Id, Vgs: 103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V, 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 30V, 436pF @ 30V
- Power - Max: 1.4W (Ta), 5.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock13,932 |
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- | 60V | 2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc) | 103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V | 2.5V @ 250µA | 9.4nC @ 10V, 9nC @ 10V | 527pF @ 30V, 436pF @ 30V | 1.4W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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onsemi |
T6 60V LL S08FL DS
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
- Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V
- Power - Max: 3.1W (Ta), 45W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Package: - |
Stock4,500 |
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- | 60V | 12A (Ta), 49A (Tc) | 11.9mOhm @ 10A, 10V | 2.2V @ 30µA | 12.3nC @ 10V | 793pF @ 25V | 3.1W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Central Semiconductor Corp |
MOSFET 2P-CH 20V 0.65A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 650mA
- Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock19,068 |
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Logic Level Gate | 20V | 650mA | 360mOhm @ 350mA, 4.5V | 1V @ 250µA | 1.2nC @ 4.5V | 100pF @ 16V | 350mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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onsemi |
MOSFET 2P-CH 20V 3.7A 6MICROFET
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Rds On (Max) @ Id, Vgs: 72mOhm @ 3.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-MicroFET (2x2)
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Package: - |
Request a Quote |
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- | 20V | 3.7A (Ta) | 72mOhm @ 3.7A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | 655pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 6-MicroFET (2x2) |
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Wolfspeed, Inc. |
SIC 2N-CH 1200V 200A MODULE
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
- Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 69mA
- Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 200A (Tj) | 6.9mOhm @ 200A, 15V | 3.6V @ 69mA | 708nC @ 15V | 20400pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
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Microchip Technology |
SIC MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 30V/20V 4A 6TSOPF
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V, 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: 6-TSOP-F
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Package: - |
Stock17,625 |
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- | 30V, 20V | 4A (Ta) | 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V | 1V @ 1mA, 1.2V @ 1mA | 3.2nC @ 4.5V, 6.7nC @ 4.5V | 310pF @ 15V, 480pF @ 10V | 1.4W (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | 6-TSOP-F |
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onsemi |
SIC 2N-CH 1200V 114A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
- Power - Max: 250W (Tj)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | - |
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onsemi |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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