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Infineon Technologies |
MOSFET 2P-CH 12V 5.5A 8TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.5A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock3,232 |
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Logic Level Gate | 12V | 5.5A | 25 mOhm @ 5.4A, 4.5V | 900mV @ 250µA | 22nC @ 4.5V | 1984pF @ 6V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Infineon Technologies |
MOSFET 2P-CH 12V 7.8A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 7.8A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,408 |
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Logic Level Gate | 12V | 7.8A | 24 mOhm @ 7.8A, 4.5V | 900mV @ 250µA | 33nC @ 4.5V | 2020pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2P-CH 20V 6A PPAK CHIPFET
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
- Power - Max: 10.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? ChipFET? Dual
- Supplier Device Package: PowerPAK? ChipFet Dual
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Package: PowerPAK? ChipFET? Dual |
Stock470,784 |
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Logic Level Gate | 20V | 6A | 58 mOhm @ 3.6A, 4.5V | 1.5V @ 250µA | 17nC @ 10V | 480pF @ 10V | 10.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFET? Dual | PowerPAK? ChipFet Dual |
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IXYS |
MOSFET 6N-CH 40V 180A ISOPLUS
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 180A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Flat Leads
- Supplier Device Package: ISOPLUS-DIL?
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Package: 17-SMD, Flat Leads |
Stock3,568 |
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Standard | 40V | 180A | - | 4V @ 1mA | 94nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 17-SMD, Flat Leads | ISOPLUS-DIL? |
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ON Semiconductor |
MOSFET 2P-CH 30V 1.5A 6-TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V
- Power - Max: 600mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock1,061,700 |
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Logic Level Gate | 30V | 1.5A | 160 mOhm @ 2.1A, 10V | 3V @ 250µA | 7.1nC @ 10V | 281pF @ 15V | 600mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Vishay Siliconix |
MOSFET 2P-CH 20V 3A 1206-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET?
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Package: 8-SMD, Flat Lead |
Stock369,792 |
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Logic Level Gate | 20V | 3A | 86 mOhm @ 3A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET? |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 20V SC89-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 200mA, 150mA
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
- Power - Max: 446mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SC-89-6
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Package: SOT-563, SOT-666 |
Stock2,496 |
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Logic Level Gate | 20V | 200mA, 150mA | 5 Ohm @ 200mA, 4.5V | 1.5V @ 250µA | 1.1nC @ 4.5V | 60pF @ 10V | 446mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 |
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Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 5A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock756,516 |
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Logic Level Gate | 30V | 5A | 50 mOhm @ 5A, 10V | 3V @ 250µA | 35nC @ 10V | 525pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 20V 4.7A 6UDFN
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.7A
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: 6-UDFN Exposed Pad |
Stock3,568 |
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Standard | 20V | 4.7A | 40 mOhm @ 4.2A, 4.5V | 1.4V @ 250µA | 15nC @ 8V | 713pF @ 10V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Diodes Incorporated |
MOSFET 2P-CH 30V 6A SO-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,728 |
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Standard | 30V | 6A | 25 mOhm @ 7A, 10V | 3V @ 250µA | 10.9nC @ 10V | 1241pF @ 15V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
MOSFET 2N-CH 30V 7A/5.7A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A, 5.7A
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
- Power - Max: 1.19W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,768 |
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Logic Level Gate | 30V | 7A, 5.7A | 15 mOhm @ 9A, 10V | 2.4V @ 250µA | 42nC @ 10V | 1932pF @ 15V | 1.19W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Advanced Linear Devices Inc. |
QUAD P-CHANNEL EPAD MATCHED PAIR
- FET Type: 4 P-Channel, Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 780mV @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock4,176 |
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Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP
- FET Type: 2 N-Channel (Dual) Matched Pair
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 10.6V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V
- Vgs(th) (Max) @ Id: 10mV @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
- Power - Max: 500mW
- Operating Temperature: 0°C ~ 70°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock6,640 |
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Standard | 10.6V | - | 500 Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
MOSFET 2N-CH 25V 4.5A 12DSBGA
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 2A, 8V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 12.5V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-UFBGA, DSBGA
- Supplier Device Package: 12-DSBGA
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Package: 12-UFBGA, DSBGA |
Stock20,568 |
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Logic Level Gate | 25V | 4.5A | 39 mOhm @ 2A, 8V | 1.4V @ 250µA | 4nC @ 4.5V | 585pF @ 12.5V | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 12-UFBGA, DSBGA | 12-DSBGA |
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Nexperia USA Inc. |
MOSFET 2P-CH 30V 0.41A 6DFN
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 410mA
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 410mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V
- Power - Max: 285mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
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Package: 6-XFDFN Exposed Pad |
Stock96,450 |
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Standard | 30V | 410mA | 1.4 Ohm @ 410mA, 4.5V | 950mV @ 250µA | 1.2nC @ 4.5V | 43.2pF @ 15V | 285mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN Exposed Pad | DFN1010B-6 |
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Vishay Siliconix |
MOSFET 2N-CH 75V 17A PPAK SO8
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
- Power - Max: 34W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
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Package: - |
Stock17,934 |
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- | 75V | 17A (Tc) | 50mOhm @ 3.8A, 10V | 2.5V @ 250µA | 21nC @ 10V | 790pF @ 35V | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
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Rohm Semiconductor |
60V 10A, DUAL NCH+NCH, HSMT8, PO
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 10A (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
- Power - Max: 2W (Ta), 13W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-HSMT (3.2x3)
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Package: - |
Stock9,000 |
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- | 60V | 3.5A (Ta), 10A (Tc) | 90mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.1nC @ 10V | 135pF @ 30V | 2W (Ta), 13W (Tc) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 13A/16A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
- Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
- Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN-EP (3x3)
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Package: - |
Request a Quote |
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- | 30V | 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc) | 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V | 2.2V @ 250µA | 11nC @ 10V, 17.5nC @ 10V | 485pF @ 15V, 807pF @ 15V | 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN-EP (3x3) |
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Fairchild Semiconductor |
MOSFET 2N-CH 30V 5.5A 8-SO
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Panjit International Inc. |
MOSFET N/P-CH 30V 6.1A/6A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 6A (Ta)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 30mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V
- Power - Max: 1.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock6,477 |
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- | 30V | 6.1A (Ta), 6A (Ta) | 28mOhm @ 6A, 10V, 30mOhm @ 4A, 10V | 2.1V @ 250µA, 2.5V @ 250µA | 7.8nC @ 10V, 4.5V | 343pF @ 15V, 870pF @ 15V | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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onsemi |
PCH+NCH 2.5V DRIVE SERIES
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild Semiconductor |
MOSFET N-CH 500V 12.1A
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET 2N-CH 30V 5.8A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A
- Rds On (Max) @ Id, Vgs: 30mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Stock135 |
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- | 30V | 5.8A | 30mOhm @ 2.9A, 10V | 3V @ 250µA | 6.3nC @ 5V | 560pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
MOSFET 2P-CH 20V 3.2A 6UDFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V
- Power - Max: 820mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: - |
Request a Quote |
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- | 20V | 3.2A (Ta) | 75mOhm @ 2.8A, 4.5V | 1V @ 250µA | 12.7nC @ 8V | 443pF @ 10V | 820mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Panjit International Inc. |
MOSFET 2N-CH 50V 0.36A SOT363
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 236mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Stock36,003 |
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- | 50V | 360mA (Ta) | 1.6Ohm @ 500mA, 10V | 1.5V @ 250µA | 1nC @ 4.5V | 50pF @ 25V | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Diodes Incorporated |
MOSFET 2N-CH 30V 32A POWERDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
- Power - Max: 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXC)
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Package: - |
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- | 30V | 32A (Tc) | 20mOhm @ 9A, 10V | 2.5V @ 250µA | 7nC @ 10V | 393pF @ 15V | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 (Type UXC) |
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onsemi |
MOSFET PWR P-CHAN DUAL 30V 8SOIC
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Panjit International Inc. |
MOSFET 2P-CH 60V 0.2A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
- Power - Max: 300mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
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- | 60V | 200mA (Ta) | 4Ohm @ 500mA, 10V | 2.5V @ 250µA | 1.1nC @ 4.5V | 51pF @ 25V | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |