|
|
Ampleon USA Inc. |
RF FET LDMOS 65V 15DB SOT12751
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.5GHz ~ 2.69GHz
- Gain: 15dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 400mA
- Power - Output: 150W
- Voltage - Rated: 65V
- Package / Case: SOT1275-1
- Supplier Device Package: 6-DFM
|
Package: SOT1275-1 |
Stock7,728 |
|
2.5GHz ~ 2.69GHz | 15dB | 28V | - | - | 400mA | 150W | 65V | SOT1275-1 | 6-DFM |
|
|
NXP |
FET RF 65V 2.17GHZ NI780H
- Transistor Type: N-Channel
- Frequency: 2.17GHz
- Gain: 18.3dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 700mA
- Power - Output: 24W
- Voltage - Rated: 65V
- Package / Case: NI-780
- Supplier Device Package: NI-780
|
Package: NI-780 |
Stock7,536 |
|
2.17GHz | 18.3dB | 28V | - | - | 700mA | 24W | 65V | NI-780 | NI-780 |
|
|
NXP |
FET RF 2CH 65V 2.17GHZ NI780-4
- Transistor Type: LDMOS (Dual)
- Frequency: 2.17GHz
- Gain: 14dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 360mA
- Power - Output: 28W
- Voltage - Rated: 65V
- Package / Case: NI-780-4
- Supplier Device Package: NI-780-4
|
Package: NI-780-4 |
Stock7,008 |
|
2.17GHz | 14dB | 28V | - | - | 360mA | 28W | 65V | NI-780-4 | NI-780-4 |
|
|
Ampleon USA Inc. |
RF FET LDMOS 65V 18.5DB SOT608B
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 18.5dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 405mA
- Power - Output: 2.5W
- Voltage - Rated: 65V
- Package / Case: SOT-608B
- Supplier Device Package: CDFM2
|
Package: SOT-608B |
Stock2,592 |
|
2.11GHz ~ 2.17GHz | 18.5dB | 28V | - | - | 405mA | 2.5W | 65V | SOT-608B | CDFM2 |
|
|
Ampleon USA Inc. |
RF FET LDMOS 65V 18.7DB SOT502B
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 18.7dB
- Voltage - Test: 28V
- Current Rating: 18A
- Noise Figure: -
- Current - Test: 690mA
- Power - Output: 17W
- Voltage - Rated: 65V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
|
Package: SOT-502B |
Stock4,256 |
|
2.11GHz ~ 2.17GHz | 18.7dB | 28V | 18A | - | 690mA | 17W | 65V | SOT-502B | SOT502B |
|
|
Cree/Wolfspeed |
FET RF 120V 1.1GHZ 440193
- Transistor Type: Silicon Carbide MESFET
- Frequency: 1.1GHz
- Gain: 13dB
- Voltage - Test: 48V
- Current Rating: 9A
- Noise Figure: -
- Current - Test: 2A
- Power - Output: 60W
- Voltage - Rated: 120V
- Package / Case: 440193
- Supplier Device Package: 440193
|
Package: 440193 |
Stock3,360 |
|
1.1GHz | 13dB | 48V | 9A | - | 2A | 60W | 120V | 440193 | 440193 |
|
|
STMicroelectronics |
FET RF 40V 500MHZ PWRSO-10
- Transistor Type: LDMOS
- Frequency: 500MHz
- Gain: 17dB
- Voltage - Test: 12.5V
- Current Rating: 2.5A
- Noise Figure: -
- Current - Test: 50mA
- Power - Output: 3W
- Voltage - Rated: 40V
- Package / Case: PowerSO-10 Exposed Bottom Pad
- Supplier Device Package: PowerSO-10RF (Straight Lead)
|
Package: PowerSO-10 Exposed Bottom Pad |
Stock28,692 |
|
500MHz | 17dB | 12.5V | 2.5A | - | 50mA | 3W | 40V | PowerSO-10 Exposed Bottom Pad | PowerSO-10RF (Straight Lead) |
|
|
NXP |
FET RF 65V 1.93GHZ NI-200S
- Transistor Type: LDMOS
- Frequency: 1.93GHz
- Gain: 12.5dB
- Voltage - Test: 26V
- Current Rating: -
- Noise Figure: -
- Current - Test: 25mA
- Power - Output: 4W
- Voltage - Rated: 65V
- Package / Case: NI-200S
- Supplier Device Package: NI-200S
|
Package: NI-200S |
Stock4,848 |
|
1.93GHz | 12.5dB | 26V | - | - | 25mA | 4W | 65V | NI-200S | NI-200S |
|
|
NXP |
FET RF 65V 880MHZ NI-780S
- Transistor Type: LDMOS
- Frequency: 880MHz
- Gain: 17.8dB
- Voltage - Test: 26V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.1A
- Power - Output: 25W
- Voltage - Rated: 65V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
|
Package: NI-780S |
Stock44,760 |
|
880MHz | 17.8dB | 26V | - | - | 1.1A | 25W | 65V | NI-780S | NI-780S |
|
|
CEL |
FET RF 4V 20GHZ MICRO-X
- Transistor Type: HFET
- Frequency: 20GHz
- Gain: 13.5dB
- Voltage - Test: 2V
- Current Rating: 70mA
- Noise Figure: 0.7dB
- Current - Test: 10mA
- Power - Output: -
- Voltage - Rated: 4V
- Package / Case: Micro-X ceramic (84C)
- Supplier Device Package: 84C
|
Package: Micro-X ceramic (84C) |
Stock7,344 |
|
20GHz | 13.5dB | 2V | 70mA | 0.7dB | 10mA | - | 4V | Micro-X ceramic (84C) | 84C |
|
|
Fairchild/ON Semiconductor |
JFET N-CH 25V 15MA SOT23
- Transistor Type: N-Channel JFET
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: 15mA
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 25V
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock904,920 |
|
- | - | - | 15mA | - | - | - | 25V | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
Fairchild/ON Semiconductor |
JFET N-CH 30V 50MA TO92
- Transistor Type: N-Channel JFET
- Frequency: 100MHz
- Gain: -
- Voltage - Test: 15V
- Current Rating: 50mA
- Noise Figure: 1.5dB
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 30V
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,616 |
|
100MHz | - | 15V | 50mA | 1.5dB | - | - | 30V | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
RFMD |
IC TRANS PHEMT 10GHZ SOT-343
- Transistor Type: pHEMT FET
- Frequency: 1.9GHz
- Gain: 19.9dB
- Voltage - Test: 5V
- Current Rating: 180mA
- Noise Figure: 0.9dB
- Current - Test: 40mA
- Power - Output: 17.7dBm
- Voltage - Rated: 7V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: -
|
Package: SC-82A, SOT-343 |
Stock4,624 |
|
1.9GHz | 19.9dB | 5V | 180mA | 0.9dB | 40mA | 17.7dBm | 7V | SC-82A, SOT-343 | - |
|
|
Infineon Technologies |
IC AMP RF LDMOS
- Transistor Type: LDMOS
- Frequency: 1.88GHz
- Gain: 17dB
- Voltage - Test: 30V
- Current Rating: -
- Noise Figure: -
- Current - Test: 2.6A
- Power - Output: 80W
- Voltage - Rated: 65V
- Package / Case: H-37275-6/2
- Supplier Device Package: H-37275-6/2
|
Package: H-37275-6/2 |
Stock3,184 |
|
1.88GHz | 17dB | 30V | - | - | 2.6A | 80W | 65V | H-37275-6/2 | H-37275-6/2 |
|
|
NXP |
IC TRANS RF LDMOS
- Transistor Type: LDMOS (Dual)
- Frequency: 1.4GHz
- Gain: 17.7dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 1000W
- Voltage - Rated: 105V
- Package / Case: NI-1230-4S GW
- Supplier Device Package: NI-1230-4S Gull Wing
|
Package: NI-1230-4S GW |
Stock3,024 |
|
1.4GHz | 17.7dB | 50V | - | - | 100mA | 1000W | 105V | NI-1230-4S GW | NI-1230-4S Gull Wing |
|
|
NXP |
FET RF 2CH 70V 803MHZ
- Transistor Type: LDMOS (Dual)
- Frequency: 803MHz
- Gain: 21.5dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 450mA
- Power - Output: 30W
- Voltage - Rated: 70V
- Package / Case: NI-780S-4
- Supplier Device Package: NI-780S-4
|
Package: NI-780S-4 |
Stock3,952 |
|
803MHz | 21.5dB | 28V | - | - | 450mA | 30W | 70V | NI-780S-4 | NI-780S-4 |
|
|
NXP |
FET RF 68V 2.6GHZ TO270-2
- Transistor Type: LDMOS
- Frequency: 2.6GHz
- Gain: 14dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 160mA
- Power - Output: 3W
- Voltage - Rated: 68V
- Package / Case: TO-270AA
- Supplier Device Package: TO-270-2
|
Package: TO-270AA |
Stock10,080 |
|
2.6GHz | 14dB | 28V | - | - | 160mA | 3W | 68V | TO-270AA | TO-270-2 |
|
|
IXYS |
RF MOSFET 2N-CHANNEL DE275
- Transistor Type: 2 N-Channel (Dual)
- Frequency: 2MHz ~ 110MHz
- Gain: -
- Voltage - Test: -
- Current Rating: 1mA
- Noise Figure: -
- Current - Test: -
- Power - Output: 270W
- Voltage - Rated: 500V
- Package / Case: 8-SMD, Flat Lead Exposed Pad
- Supplier Device Package: -
|
Package: 8-SMD, Flat Lead Exposed Pad |
Stock7,520 |
|
2MHz ~ 110MHz | - | - | 1mA | - | - | 270W | 500V | 8-SMD, Flat Lead Exposed Pad | - |
|
|
Ampleon USA Inc. |
RF FET LDMOS 65V 36.1DB SOT12112
- Transistor Type: LDMOS (Dual)
- Frequency: 957.5MHz
- Gain: 36.1dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 15mA
- Power - Output: 1.5W
- Voltage - Rated: 65V
- Package / Case: SOT-1211-2
- Supplier Device Package: 16-HSOPF
|
Package: SOT-1211-2 |
Stock7,936 |
|
957.5MHz | 36.1dB | 28V | - | - | 15mA | 1.5W | 65V | SOT-1211-2 | 16-HSOPF |
|
|
Ampleon USA Inc. |
RF FET LDMOS 65V 18DB SOT1121A
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 1.3GHz
- Gain: 18dB
- Voltage - Test: 32V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 200W
- Voltage - Rated: 65V
- Package / Case: SOT-1121A
- Supplier Device Package: CDFM4
|
Package: SOT-1121A |
Stock8,556 |
|
1.3GHz | 18dB | 32V | - | - | 100mA | 200W | 65V | SOT-1121A | CDFM4 |
|
|
NXP |
RF MOSFET 48V 6DFN
- Transistor Type: -
- Frequency: 3.3GHz ~ 4.3GHz
- Gain: 16.9dB
- Voltage - Test: 48 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 12 mA
- Power - Output: 24.5dBm
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (4x4.5)
|
Package: - |
Request a Quote |
|
3.3GHz ~ 4.3GHz | 16.9dB | 48 V | - | - | 12 mA | 24.5dBm | 125 V | 6-LDFN Exposed Pad | 6-PDFN (4x4.5) |
|
|
MACOM Technology Solutions |
RF MOSFET
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - |
|
|
NXP |
RF MOSFET LDMOS 50V NI780
- Transistor Type: LDMOS
- Frequency: 1.03GHz ~ 1.09GHz
- Gain: 19.2dB
- Voltage - Test: 50 V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 700W
- Voltage - Rated: 105 V
- Package / Case: NI-780GS-4L
- Supplier Device Package: NI-780GS-4L
|
Package: - |
Request a Quote |
|
1.03GHz ~ 1.09GHz | 19.2dB | 50 V | 10µA | - | 100 mA | 700W | 105 V | NI-780GS-4L | NI-780GS-4L |
|
|
MACOM Technology Solutions |
RF MOSFET HEMT 28V 440162
- Transistor Type: HEMT
- Frequency: 2.3GHz ~ 2.7GHz
- Gain: 12.5dB
- Voltage - Test: 28 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 130W
- Voltage - Rated: 84 V
- Package / Case: 440162
- Supplier Device Package: 440162
|
Package: - |
Stock75 |
|
2.3GHz ~ 2.7GHz | 12.5dB | 28 V | - | - | 500 mA | 130W | 84 V | 440162 | 440162 |
|
|
SuperApex, LLC |
RF MOSFET 2V DIE
- Transistor Type: -
- Frequency: 40GHz
- Gain: 6dB
- Voltage - Test: 2 V
- Current Rating: 85mA
- Noise Figure: 1.4dB
- Current - Test: 20 mA
- Power - Output: -
- Voltage - Rated: -
- Package / Case: Die
- Supplier Device Package: Die
|
Package: - |
Request a Quote |
|
40GHz | 6dB | 2 V | 85mA | 1.4dB | 20 mA | - | - | Die | Die |
|
|
STMicroelectronics |
RF MOSFET LDMOS A2
- Transistor Type: LDMOS
- Frequency: 1.3GHz ~ 1.7GHz
- Gain: 18dB
- Voltage - Test: -
- Current Rating: 1µA
- Noise Figure: -
- Current - Test: -
- Power - Output: 80W
- Voltage - Rated: 65 V
- Package / Case: 2L-FLG
- Supplier Device Package: A2
|
Package: - |
Request a Quote |
|
1.3GHz ~ 1.7GHz | 18dB | - | 1µA | - | - | 80W | 65 V | 2L-FLG | A2 |
|
|
NXP |
RF MOSFET LDMOS 48V OM780G-4
- Transistor Type: LDMOS
- Frequency: 720MHz ~ 960MHz
- Gain: 19.7dB
- Voltage - Test: 48 V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 400 mA
- Power - Output: 53dBm
- Voltage - Rated: 105 V
- Package / Case: OM-780G-4L
- Supplier Device Package: OM-780G-4L
|
Package: - |
Request a Quote |
|
720MHz ~ 960MHz | 19.7dB | 48 V | 10µA | - | 400 mA | 53dBm | 105 V | OM-780G-4L | OM-780G-4L |
|
|
Ampleon USA Inc. |
RF MOSFET LDMOS 30V SOT1258-4
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 1.93GHz ~ 1.995GHz
- Gain: 15dB
- Voltage - Test: 30 V
- Current Rating: 2.8µA
- Noise Figure: -
- Current - Test: 1.06 A
- Power - Output: 600W
- Voltage - Rated: 65 V
- Package / Case: SOT-1258-4
- Supplier Device Package: SOT1258-4
|
Package: - |
Request a Quote |
|
1.93GHz ~ 1.995GHz | 15dB | 30 V | 2.8µA | - | 1.06 A | 600W | 65 V | SOT-1258-4 | SOT1258-4 |