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Infineon Technologies |
IC FET RF LDMOS 45W H-30265-2
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 14dB
- Voltage - Test: 28V
- Current Rating: 1µA
- Noise Figure: -
- Current - Test: 500mA
- Power - Output: 45W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-30265-2
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Package: 2-Flatpack, Fin Leads |
Stock2,832 |
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2.17GHz | 14dB | 28V | 1µA | - | 500mA | 45W | 65V | 2-Flatpack, Fin Leads | H-30265-2 |
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Microsemi Corporation |
PWR MOSFET RF N-CH 150V TO-247AD
- Transistor Type: N-Channel
- Frequency: 13.56MHz
- Gain: 21dB
- Voltage - Test: 50V
- Current Rating: 11A
- Noise Figure: -
- Current - Test: 200mA
- Power - Output: 125W
- Voltage - Rated: 150V
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock4,608 |
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13.56MHz | 21dB | 50V | 11A | - | 200mA | 125W | 150V | - | - |
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NXP |
FET RF 65V 2.17GHZ NI780HS
- Transistor Type: N-Channel
- Frequency: 2.17GHz
- Gain: 18.3dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 700mA
- Power - Output: 24W
- Voltage - Rated: 65V
- Package / Case: NI-780
- Supplier Device Package: NI-780
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Package: NI-780 |
Stock3,056 |
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2.17GHz | 18.3dB | 28V | - | - | 700mA | 24W | 65V | NI-780 | NI-780 |
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NXP |
FET RF 2CH 65V 2.17GHZ NI780S-4
- Transistor Type: LDMOS (Dual)
- Frequency: 2.17GHz
- Gain: 14dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 360mA
- Power - Output: 28W
- Voltage - Rated: 65V
- Package / Case: NI-780S-4
- Supplier Device Package: NI-780S-4
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Package: NI-780S-4 |
Stock5,856 |
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2.17GHz | 14dB | 28V | - | - | 360mA | 28W | 65V | NI-780S-4 | NI-780S-4 |
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NXP |
FET RF 2CH 130V 860MHZ NI1230S
- Transistor Type: LDMOS (Dual)
- Frequency: 860MHz
- Gain: 19.3dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.4A
- Power - Output: 125W
- Voltage - Rated: 130V
- Package / Case: NI-1230S
- Supplier Device Package: NI-1230S
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Package: NI-1230S |
Stock5,648 |
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860MHz | 19.3dB | 50V | - | - | 1.4A | 125W | 130V | NI-1230S | NI-1230S |
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Ampleon USA Inc. |
RF FET LDMOS 65V 19DB SOT1112A
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 19dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 345mA
- Power - Output: 2.5W
- Voltage - Rated: 65V
- Package / Case: SOT-1112A
- Supplier Device Package: CDFM6
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Package: SOT-1112A |
Stock6,960 |
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2.11GHz ~ 2.17GHz | 19dB | 28V | - | - | 345mA | 2.5W | 65V | SOT-1112A | CDFM6 |
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Ampleon USA Inc. |
RF FET LDMOS 65V 23DB SOT1112A
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 788.5MHz ~ 823.5MHz
- Gain: 23dB
- Voltage - Test: 28V
- Current Rating: 11A
- Noise Figure: -
- Current - Test: 390mA
- Power - Output: 2.5W
- Voltage - Rated: 65V
- Package / Case: SOT-1112A
- Supplier Device Package: CDFM6
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Package: SOT-1112A |
Stock7,568 |
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788.5MHz ~ 823.5MHz | 23dB | 28V | 11A | - | 390mA | 2.5W | 65V | SOT-1112A | CDFM6 |
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Ampleon USA Inc. |
RF FET LDMOS 65V 17DB SOT539A
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 17.5dB
- Voltage - Test: 32V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.6A
- Power - Output: 50W
- Voltage - Rated: 65V
- Package / Case: SOT539A
- Supplier Device Package: SOT539A
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Package: SOT539A |
Stock3,984 |
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2.11GHz ~ 2.17GHz | 17.5dB | 32V | - | - | 1.6A | 50W | 65V | SOT539A | SOT539A |
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NXP |
FET RF 2CH 65V 2.03GHZ NI780H-4
- Transistor Type: LDMOS (Dual)
- Frequency: 2.03GHz
- Gain: 18.2dB
- Voltage - Test: 32V
- Current Rating: -
- Noise Figure: -
- Current - Test: 150mA
- Power - Output: 10W
- Voltage - Rated: 65V
- Package / Case: NI-780-4
- Supplier Device Package: NI-780-4
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Package: NI-780-4 |
Stock6,432 |
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2.03GHz | 18.2dB | 32V | - | - | 150mA | 10W | 65V | NI-780-4 | NI-780-4 |
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Ampleon USA Inc. |
RF FET LDMOS 65V SOT502B
- Transistor Type: LDMOS
- Frequency: -
- Gain: -
- Voltage - Test: 28V
- Current Rating: 18A
- Noise Figure: -
- Current - Test: 600mA
- Power - Output: 9W
- Voltage - Rated: 65V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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Package: SOT-502B |
Stock7,488 |
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- | - | 28V | 18A | - | 600mA | 9W | 65V | SOT-502B | SOT502B |
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NXP |
FET RF 65V 880MHZ NI-780S
- Transistor Type: LDMOS
- Frequency: 880MHz
- Gain: 17.9dB
- Voltage - Test: 26V
- Current Rating: -
- Noise Figure: -
- Current - Test: 700mA
- Power - Output: 90W
- Voltage - Rated: 65V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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Package: NI-780S |
Stock6,288 |
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880MHz | 17.9dB | 26V | - | - | 700mA | 90W | 65V | NI-780S | NI-780S |
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Broadcom Limited |
FET RF 3V 12GHZ 77-SMD
- Transistor Type: pHEMT FET
- Frequency: 12GHz
- Gain: 12dB
- Voltage - Test: 1.5V
- Current Rating: 45mA
- Noise Figure: 0.5dB
- Current - Test: 10mA
- Power - Output: 5dBm
- Voltage - Rated: 3V
- Package / Case: 4-SMD (77 Pack)
- Supplier Device Package: 77
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Package: 4-SMD (77 Pack) |
Stock2,080 |
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12GHz | 12dB | 1.5V | 45mA | 0.5dB | 10mA | 5dBm | 3V | 4-SMD (77 Pack) | 77 |
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Fairchild/ON Semiconductor |
JFET N-CH 30V 18MA TO92
- Transistor Type: N-Channel JFET
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: 18mA
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 30V
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock23,400 |
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- | - | - | 18mA | - | - | - | 30V | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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NXP |
MOSFET N-CH 12V 40MA SOT143B
- Transistor Type: N-Channel Dual Gate
- Frequency: 200MHz
- Gain: -
- Voltage - Test: 8V
- Current Rating: 40mA
- Noise Figure: 0.6dB
- Current - Test: 15mA
- Power - Output: -
- Voltage - Rated: 12V
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
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Package: TO-253-4, TO-253AA |
Stock5,280 |
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200MHz | - | 8V | 40mA | 0.6dB | 15mA | - | 12V | TO-253-4, TO-253AA | SOT-143B |
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Infineon Technologies |
IC RF LDMOS FET H-36265-2
- Transistor Type: LDMOS
- Frequency: 500MHz ~ 1.4GHz
- Gain: 15.8dB
- Voltage - Test: -
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: -
- Power - Output: 34W
- Voltage - Rated: 105V
- Package / Case: H-36265-2
- Supplier Device Package: H-36265-2
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Package: H-36265-2 |
Stock4,208 |
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500MHz ~ 1.4GHz | 15.8dB | - | 10µA | - | - | 34W | 105V | H-36265-2 | H-36265-2 |
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NXP |
FET RF 65V 2.3GHZ NI-1230-4LS2L
- Transistor Type: LDMOS
- Frequency: 2.3GHz
- Gain: 14.9dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 750mA
- Power - Output: 66W
- Voltage - Rated: 65V
- Package / Case: NI-1230-4LS2L
- Supplier Device Package: NI-1230-4LS2L
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Package: NI-1230-4LS2L |
Stock2,624 |
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2.3GHz | 14.9dB | 28V | - | - | 750mA | 66W | 65V | NI-1230-4LS2L | NI-1230-4LS2L |
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Ampleon USA Inc. |
RF FET LDMOS 65V 17.2DB SOT539B
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.3GHz ~ 2.4GHz
- Gain: 17.2dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.74A
- Power - Output: 60W
- Voltage - Rated: 65V
- Package / Case: SOT539B
- Supplier Device Package: SOT539B
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Package: SOT539B |
Stock4,096 |
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2.3GHz ~ 2.4GHz | 17.2dB | 28V | - | - | 1.74A | 60W | 65V | SOT539B | SOT539B |
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Ampleon USA Inc. |
BLC9G20LS-150PV/SOT1275/REELDP
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,720 |
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- | - | - | - | - | - | - | - | - | - |
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IXYS |
RF MOSFET N-CHANNEL DE475
- Transistor Type: N-Channel
- Frequency: 30MHz
- Gain: -
- Voltage - Test: -
- Current Rating: 1mA
- Noise Figure: -
- Current - Test: -
- Power - Output: 1800W
- Voltage - Rated: 1000V
- Package / Case: 6-SMD, Flat Lead Exposed Pad
- Supplier Device Package: DE475
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Package: 6-SMD, Flat Lead Exposed Pad |
Stock5,008 |
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30MHz | - | - | 1mA | - | - | 1800W | 1000V | 6-SMD, Flat Lead Exposed Pad | DE475 |
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Ampleon USA Inc. |
RF FET LDMOS 65V 19.2DB SOT12753
- Transistor Type: LDMOS
- Frequency: 1.81GHz ~ 1.88GHz
- Gain: 19.2dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 700mA
- Power - Output: 120W
- Voltage - Rated: 65V
- Package / Case: SOT1275-3
- Supplier Device Package: DFM6
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Package: SOT1275-3 |
Stock4,976 |
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1.81GHz ~ 1.88GHz | 19.2dB | 28V | - | - | 700mA | 120W | 65V | SOT1275-3 | DFM6 |
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STMicroelectronics |
TRANSISTOR RF 5X5 POWERFLAT
- Transistor Type: LDMOS
- Frequency: 500MHz
- Gain: 20dB
- Voltage - Test: 7.5V
- Current Rating: 4A
- Noise Figure: -
- Current - Test: 50mA
- Power - Output: 3W
- Voltage - Rated: 25V
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerFLAT? (5x5)
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Package: 8-PowerVDFN |
Stock29,520 |
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500MHz | 20dB | 7.5V | 4A | - | 50mA | 3W | 25V | 8-PowerVDFN | PowerFLAT? (5x5) |
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MACOM Technology Solutions |
RF MOSFET 30V H-33288-6
- Transistor Type: -
- Frequency: 1.88GHz
- Gain: 19dB
- Voltage - Test: 30 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.85 A
- Power - Output: 50W
- Voltage - Rated: 65 V
- Package / Case: H-33288-6
- Supplier Device Package: H-33288-6
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Package: - |
Request a Quote |
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1.88GHz | 19dB | 30 V | - | - | 1.85 A | 50W | 65 V | H-33288-6 | H-33288-6 |
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CML Microcircuits |
RF MOSFET PHEMT FET 2.5V DIE
- Transistor Type: pHEMT FET
- Frequency: 26GHz
- Gain: 10dB
- Voltage - Test: 2.5 V
- Current Rating: -
- Noise Figure: 0.6dB
- Current - Test: 25 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: Die
- Supplier Device Package: Die
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Package: - |
Stock1,371 |
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26GHz | 10dB | 2.5 V | - | 0.6dB | 25 mA | - | 4 V | Die | Die |
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MACOM Technology Solutions |
RF MOSFET HEMT 50V H-37265J-2
- Transistor Type: HEMT
- Frequency: 960MHz ~ 1.215GHz
- Gain: 19.5dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 400W
- Voltage - Rated: 125 V
- Package / Case: H-37265J-2
- Supplier Device Package: H-37265J-2
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Package: - |
Stock129 |
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960MHz ~ 1.215GHz | 19.5dB | 50 V | - | - | 100 mA | 400W | 125 V | H-37265J-2 | H-37265J-2 |
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MACOM Technology Solutions |
RF MOSFET
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
RF MOSFET HEMT 50V
- Transistor Type: HEMT
- Frequency: 1.03GHz ~ 1.09GHz
- Gain: 19.4dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 300 mA
- Power - Output: 2200W
- Voltage - Rated: 150 V
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Request a Quote |
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1.03GHz ~ 1.09GHz | 19.4dB | 50 V | - | - | 300 mA | 2200W | 150 V | Module | - |
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Microchip Technology |
RF MOSFET HEMT 50V 55-KR
- Transistor Type: HEMT
- Frequency: 960MHz ~ 1.215GHz
- Gain: 18dB
- Voltage - Test: 50 V
- Current Rating: -
- Noise Figure: -
- Current - Test: 60 mA
- Power - Output: 300W
- Voltage - Rated: 150 V
- Package / Case: 55-KR
- Supplier Device Package: 55-KR
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Package: - |
Request a Quote |
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960MHz ~ 1.215GHz | 18dB | 50 V | - | - | 60 mA | 300W | 150 V | 55-KR | 55-KR |
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MACOM Technology Solutions |
RF MOSFET LDMOS 28V H-37275G-6
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 17dB
- Voltage - Test: 28 V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 2.6 A
- Power - Output: 320W
- Voltage - Rated: 65 V
- Package / Case: H-37275G-6/2
- Supplier Device Package: H-37275G-6/2
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Package: - |
Request a Quote |
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2.11GHz ~ 2.17GHz | 17dB | 28 V | 10µA | - | 2.6 A | 320W | 65 V | H-37275G-6/2 | H-37275G-6/2 |