Page 1003 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPD50N06S2L-13
Infineon Technologies

MOSFET N-CH 55V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock452,748
IRF450
Infineon Technologies

MOSFET N-CH 500V 12A TO-3-3

Package: TO-204AA, TO-3

Stock5,216
NP60N04VUK-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 60A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock11,004
IRFR020TR
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock75,936
APTM100DA33T1G
Microsemi Corporation

MOSFET N-CH 1000V 23A SP1

Package: SP1

Stock6,032
NVMFS4C01NWFT1G
ON Semiconductor

MOSFET N-CH 30V 49A SO8FL

Package: 8-PowerTDFN

Stock6,080
STD5N52K3
STMicroelectronics

MOSFET N-CH 525V 4.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock42,732
SIA440DJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 12A SC-70

Package: PowerPAK? SC-70-6

Stock3,376
AOTF296L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 10A TO220F

Package: TO-220-3 Full Pack

Stock16,476
IRF6623TRPBF
Infineon Technologies

MOSFET N-CH 20V 16A DIRECTFET

Package: DirectFET? Isometric ST

Stock65,100
FDB2532_F085
Fairchild/ON Semiconductor

MOSFET N-CH 150V 79A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,968
IRFP22N60KPBF
Vishay Siliconix

MOSFET N-CH 600V 22A TO-247AC

Package: TO-247-3

Stock6,704
SPW52N50C3
Infineon Technologies

MOSFET N-CH 560V 52A TO-247

Package: TO-247-3

Stock780,204
FDMA291P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 6.6A MFET 2X2

Package: 6-VDFN Exposed Pad

Stock1,559,460
EPC8004
EPC

TRANS GAN 40V 2.7A BUMPED DIE

Package: Die

Stock44,658
IRLB8721PBF
Infineon Technologies

MOSFET N-CH 30V 62A TO-220AB

Package: TO-220-3

Stock7,440
PSMN4R0-40YS,115
Nexperia USA Inc.

MOSFET N-CH 40V 100A LFPAK

Package: SC-100, SOT-669

Stock110,790
IMZA75R008M1HXKSA1
Infineon Technologies

SILICON CARBIDE MOSFET

Package: -

Request a Quote
3N163-SOT-143-4L-ROHS
Linear Integrated Systems, Inc.

P-CHANNEL, SINGLE ENHANCEMENT MO

Package: -

Stock26,688
NVMJS1D0N04CTWG
onsemi

MOSFET N-CH 40V 46A/300A 8LFPAK

Package: -

Stock9,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPD50N06S2L-13	Infineon Technologies	MOSFET N-CH 55V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock452,748	MOSFET (Metal Oxide)	55V	50A (Tc)	4.5V, 10V	2V @ 80µA	69nC @ 10V	2300pF @ 25V	±20V	-	136W (Tc)	12.7 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF450	Infineon Technologies	MOSFET N-CH 500V 12A TO-3-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	Package: TO-204AA, TO-3	Stock5,216	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	120nC @ 10V	2700pF @ 25V	±20V	-	150W (Tc)	500 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (TO-3)	TO-204AA, TO-3
NP60N04VUK-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 60A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 3.85 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock11,004	MOSFET (Metal Oxide)	40V	60A (Tc)	10V	4V @ 250µA	63nC @ 10V	3680pF @ 25V	±20V	-	1.2W (Ta), 105W (Tc)	3.85 mOhm @ 30A, 10V	175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR020TR	Vishay Siliconix	MOSFET N-CH 60V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock75,936	MOSFET (Metal Oxide)	60V	14A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	100 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
APTM100DA33T1G	Microsemi Corporation	MOSFET N-CH 1000V 23A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 23A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	Package: SP1	Stock6,032	MOSFET (Metal Oxide)	1000V	23A	10V	5V @ 2.5mA	305nC @ 10V	7868pF @ 25V	±30V	-	390W (Tc)	396 mOhm @ 18A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
NVMFS4C01NWFT1G	ON Semiconductor	MOSFET N-CH 30V 49A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.84W (Ta), 161W (Tc) Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,080	MOSFET (Metal Oxide)	30V	49A (Ta), 319A (Tc)	4.5V, 10V	2.2V @ 250µA	139nC @ 10V	10144pF @ 15V	±20V	-	3.84W (Ta), 161W (Tc)	0.9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
STD5N52K3	STMicroelectronics	MOSFET N-CH 525V 4.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock42,732	MOSFET (Metal Oxide)	525V	4.4A (Tc)	10V	4.5V @ 50µA	17nC @ 10V	545pF @ 100V	±30V	-	70W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SIA440DJ-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 12A SC-70 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock3,376	MOSFET (Metal Oxide)	40V	12A (Tc)	2.5V, 10V	1.4V @ 250µA	21.5nC @ 10V	700pF @ 20V	±12V	-	3.5W (Ta), 19W (Tc)	26 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
AOTF296L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 10A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 36.5W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock16,476	MOSFET (Metal Oxide)	100V	10A (Ta), 41A (Tc)	6V, 10V	3.4V @ 250µA	52nC @ 10V	2785pF @ 50V	±20V	-	2.2W (Ta), 36.5W (Tc)	10 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
IRF6623TRPBF	Infineon Technologies	MOSFET N-CH 20V 16A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? ST Package / Case: DirectFET? Isometric ST	Package: DirectFET? Isometric ST	Stock65,100	MOSFET (Metal Oxide)	20V	16A (Ta), 55A (Tc)	4.5V, 10V	2.2V @ 250µA	17nC @ 4.5V	1360pF @ 10V	±20V	-	1.4W (Ta), 42W (Tc)	5.7 mOhm @ 15A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST	DirectFET? Isometric ST
FDB2532_F085	Fairchild/ON Semiconductor	MOSFET N-CH 150V 79A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,968	MOSFET (Metal Oxide)	150V	79A (Tc)	6V, 10V	4V @ 250µA	107nC @ 10V	5870pF @ 25V	±20V	-	310W (Tc)	16 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFP22N60KPBF	Vishay Siliconix	MOSFET N-CH 600V 22A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3570pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,704	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	5V @ 250µA	150nC @ 10V	3570pF @ 25V	±30V	-	370W (Tc)	280 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SPW52N50C3	Infineon Technologies	MOSFET N-CH 560V 52A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock780,204	MOSFET (Metal Oxide)	560V	52A (Tc)	10V	3.9V @ 2.7mA	290nC @ 10V	6800pF @ 25V	±20V	-	417W (Tc)	70 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
FDMA291P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 6.6A MFET 2X2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 6.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock1,559,460	MOSFET (Metal Oxide)	20V	6.6A (Ta)	1.8V, 4.5V	1V @ 250µA	14nC @ 4.5V	1000pF @ 10V	±8V	-	2.4W (Ta)	42 mOhm @ 6.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
EPC8004	EPC	TRANS GAN 40V 2.7A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 20V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock44,658	GaNFET (Gallium Nitride)	40V	2.7A (Ta)	5V	2.5V @ 250µA	0.45nC @ 5V	52pF @ 20V	+6V, -4V	-	-	110 mOhm @ 500mA, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
IRLB8721PBF	Infineon Technologies	MOSFET N-CH 30V 62A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1077pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,440	MOSFET (Metal Oxide)	30V	62A (Tc)	4.5V, 10V	2.35V @ 25µA	13nC @ 4.5V	1077pF @ 15V	±20V	-	65W (Tc)	8.7 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN4R0-40YS,115	Nexperia USA Inc.	MOSFET N-CH 40V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock110,790	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 1mA	38nC @ 10V	2410pF @ 20V	±20V	-	106W (Tc)	4.2 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IMZA75R008M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3N163-SOT-143-4L-ROHS	Linear Integrated Systems, Inc.	P-CHANNEL, SINGLE ENHANCEMENT MO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50mA Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V Vgs (Max): -6.5V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-143-4 Package / Case: TO-253-4, TO-253AA	Package: -	Stock26,688	MOSFET (Metal Oxide)	40 V	50mA	20V	5V @ 10µA	-	3.5 pF @ 15 V	-6.5V	-	350mW	250Ohm @ 100µA, 20V	-	Surface Mount	SOT-143-4	TO-253-4, TO-253AA
NVMJS1D0N04CTWG	onsemi	MOSFET N-CH 40V 46A/300A 8LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: SOT-1205, 8-LFPAK56	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	46A (Ta), 300A (Tc)	10V	3.5V @ 190µA	86 nC @ 10 V	6100 pF @ 25 V	±20V	-	3.9W (Ta), 166W (Tc)	0.92mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-LFPAK	SOT-1205, 8-LFPAK56
ISC009N06LM5ATMA1	Infineon Technologies	MOSFET N-CH 60V 41A/348A TSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 147µA Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-3 Package / Case: 8-PowerTDFN	Package: -	Stock8,334	MOSFET (Metal Oxide)	60 V	41A (Ta), 348A (Tc)	4.5V, 10V	2.3V @ 147µA	209 nC @ 10 V	13000 pF @ 30 V	±20V	-	3W (Ta), 214W (Tc)	0.9mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-3	8-PowerTDFN
SSM3K16FS-LF	Toshiba Semiconductor and Storage	SMALL LOW ON RESISTANCE NCH MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	Package: -	Stock8,940	MOSFET (Metal Oxide)	20 V	100mA (Ta)	1.5V, 4V	1.1V @ 100µA	-	9.3 pF @ 3 V	±10V	-	100mW (Ta)	3Ohm @ 10mA, 4V	150°C	Surface Mount	SSM	SC-75, SOT-416
SS07N70AKMA1	Infineon Technologies	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TSM80N400CF	Taiwan Semiconductor Corporation	800V, 12A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1848 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220S Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	12A (Tc)	10V	4V @ 250µA	51 nC @ 10 V	1848 pF @ 100 V	±30V	-	69W (Tc)	400mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220S	TO-220-3 Full Pack
SIHD11N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 8A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	4V @ 250µA	42 nC @ 10 V	804 pF @ 100 V	±30V	-	78W (Tc)	450mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPW65R041CFDFKSA1	Infineon Technologies	MOSFET N-CH 650V 68.5A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 68.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 33.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	Package: -	Stock9	MOSFET (Metal Oxide)	650 V	68.5A (Tc)	10V	4.5V @ 3.3mA	300 nC @ 10 V	8400 pF @ 100 V	±20V	-	500W (Tc)	41mOhm @ 33.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
SQA700CEJW-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 100 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Package / Case: PowerPAK® SC-70-6	Package: -	Stock16,263	MOSFET (Metal Oxide)	100 V	9A (Tc)	4.5V, 10V	2.5V @ 250µA	9.5 nC @ 10 V	380 pF @ 25 V	±20V	-	13.6W (Tc)	79mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
NVLJWS022N06CLTAG	onsemi	T6 60V LL 2X2 WDFNW6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 77µA Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 6-WDFNW (2.05x2.05) Package / Case: 6-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	7.2A (Ta), 25A (Tc)	4.5V, 10V	2V @ 77µA	7.6 nC @ 10 V	440 pF @ 25 V	±20V	-	2.4W (Ta), 28W (Tc)	21mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	6-WDFNW (2.05x2.05)	6-PowerWDFN