Page 1000 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPD082N10N3GBTMA1
Infineon Technologies

MOSFET N-CH 100V 80A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,000
BSS138W E6433
Infineon Technologies

MOSFET N-CH 60V 280MA SOT-323

Package: SC-70, SOT-323

Stock2,272
GP2M012A060F
Global Power Technologies Group

MOSFET N-CH 600V 12A TO220F

Package: TO-220-3 Full Pack

Stock4,384
AON6204
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 14A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock4,352
MGSF1N03LT3
ON Semiconductor

MOSFET N-CH 30V 1.6A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,048
FQB5N50TM
Fairchild/ON Semiconductor

MOSFET N-CH 500V 4.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,200
FA57SA50LC
Vishay Semiconductor Diodes Division

MOSFET N-CH 500V 57A SOT-227

Package: SOT-227-4, miniBLOC

Stock5,344
IXTA1R4N100P
IXYS

MOSFET N-CH 1000V 1.4A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,552
AOT10N65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 10A TO220

Package: TO-220-3

Stock7,136
NVMFS5834NLT3G
ON Semiconductor

MOSFET N-CH 40V 75A SO8FL

Package: 8-PowerTDFN

Stock4,192
DKI04035
Sanken

MOSFET N-CH 40V 48A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,304
LND150N3-G-P014
Microchip Technology

MOSFET N-CH 500V 30MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock2,048
STDLED623
STMicroelectronics

MOSFET N-CH 620V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,352
IRF8010PBF
Infineon Technologies

MOSFET N-CH 100V 80A TO-220AB

Package: TO-220-3

Stock12,456
STWA40N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.110 OHM TYP.,

Package: TO-247-3

Stock7,044
RCX450N20
Rohm Semiconductor

MOSFET N-CH 200V 45A TO220

Package: TO-220-2 Full Pack

Stock567,840
NTD4909NT4G
ON Semiconductor

MOSFET N-CH 30V 8.8A SGL DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock827,556
IRLMS6802TRPBF
Infineon Technologies

MOSFET P-CH 20V 5.6A 6-TSOP

Package: SOT-23-6

Stock4,360,272
IRFB9N60APBF
Vishay Siliconix

MOSFET N-CH 600V 9.2A TO-220AB

Package: TO-220-3

Stock11,196
DMN2050L-7
Diodes Incorporated

MOSFET N-CH 20V 5.9A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock192,072

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD082N10N3GBTMA1	Infineon Technologies	MOSFET N-CH 100V 80A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 75µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 73A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,000	MOSFET (Metal Oxide)	100V	80A (Tc)	6V, 10V	3.5V @ 75µA	55nC @ 10V	3980pF @ 50V	±20V	-	125W (Tc)	8.2 mOhm @ 73A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSS138W E6433	Infineon Technologies	MOSFET N-CH 60V 280MA SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock2,272	MOSFET (Metal Oxide)	60V	280mA (Ta)	4.5V, 10V	1.4V @ 26µA	1.5nC @ 10V	43pF @ 25V	±20V	-	500mW (Ta)	3.5 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT323-3	SC-70, SOT-323
GP2M012A060F	Global Power Technologies Group	MOSFET N-CH 600V 12A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 53.4W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,384	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	5V @ 250µA	40nC @ 10V	1890pF @ 25V	±30V	-	53.4W (Tc)	650 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
AON6204	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 14A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock4,352	MOSFET (Metal Oxide)	30V	14A (Ta), 24A (Tc)	4.5V, 10V	2.4V @ 250µA	10nC @ 10V	670pF @ 15V	±20V	-	1.9W (Ta), 31W (Tc)	12 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
MGSF1N03LT3	ON Semiconductor	MOSFET N-CH 30V 1.6A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,048	MOSFET (Metal Oxide)	30V	1.6A (Ta)	4.5V, 10V	2.4V @ 250µA	-	140pF @ 5V	±20V	-	420mW (Ta)	100 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FQB5N50TM	Fairchild/ON Semiconductor	MOSFET N-CH 500V 4.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 85W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,200	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	5V @ 250µA	17nC @ 10V	610pF @ 25V	±30V	-	3.13W (Ta), 85W (Tc)	1.8 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FA57SA50LC	Vishay Semiconductor Diodes Division	MOSFET N-CH 500V 57A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 57A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,344	MOSFET (Metal Oxide)	500V	57A	10V	4V @ 250µA	338nC @ 10V	10000pF @ 25V	±20V	-	625W (Tc)	80 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTA1R4N100P	IXYS	MOSFET N-CH 1000V 1.4A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,552	MOSFET (Metal Oxide)	1000V	1.4A (Tc)	10V	4.5V @ 50µA	17.8nC @ 10V	450pF @ 25V	±20V	-	63W (Tc)	11 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOT10N65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 10A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock7,136	MOSFET (Metal Oxide)	650V	10A (Tc)	10V	4.5V @ 250µA	33nC @ 10V	1645pF @ 25V	±30V	-	250W (Tc)	1 Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
NVMFS5834NLT3G	ON Semiconductor	MOSFET N-CH 40V 75A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1231pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,192	MOSFET (Metal Oxide)	40V	14A (Ta), 75A (Tc)	4.5V, 10V	3V @ 250µA	24nC @ 10V	1231pF @ 20V	±20V	-	3.6W (Ta), 107W (Tc)	9.3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
DKI04035	Sanken	MOSFET N-CH 40V 48A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 63.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3910pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 61W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 51A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,304	MOSFET (Metal Oxide)	40V	48A (Tc)	4.5V, 10V	2.5V @ 1mA	63.2nC @ 10V	3910pF @ 25V	±20V	-	61W (Tc)	4 mOhm @ 51A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
LND150N3-G-P014	Microchip Technology	MOSFET N-CH 500V 30MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock2,048	MOSFET (Metal Oxide)	500V	30mA (Tj)	0V	-	-	10pF @ 25V	±20V	Depletion Mode	740mW (Ta)	1000 Ohm @ 500µA, 0V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
STDLED623	STMicroelectronics	MOSFET N-CH 620V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,352	MOSFET (Metal Oxide)	620V	3A (Tc)	10V	4.5V @ 50µA	15.5nC @ 10V	350pF @ 50V	±30V	-	45W (Tc)	3.6 Ohm @ 1.1A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF8010PBF	Infineon Technologies	MOSFET N-CH 100V 80A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3830pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock12,456	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4V @ 250µA	120nC @ 10V	3830pF @ 25V	±20V	-	260W (Tc)	15 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STWA40N90K5	STMicroelectronics	N-CHANNEL 900 V, 0.110 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 40A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3260pF @ 100V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: TO-247-3	Stock7,044	MOSFET (Metal Oxide)	900V	40A	10V	5V @ 100µA	89nC @ 10V	3260pF @ 100V	±30V	Current Sensing	446W (Tc)	99 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
RCX450N20	Rohm Semiconductor	MOSFET N-CH 200V 45A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 22.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock567,840	MOSFET (Metal Oxide)	200V	45A (Tc)	10V	5V @ 1mA	80nC @ 10V	4200pF @ 25V	±30V	-	2.23W (Ta), 40W (Tc)	55 mOhm @ 22.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
NTD4909NT4G	ON Semiconductor	MOSFET N-CH 30V 8.8A SGL DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock827,556	MOSFET (Metal Oxide)	30V	8.8A (Ta), 41A (Tc)	4.5V, 10V	2.2V @ 250µA	17.5nC @ 10V	1314pF @ 15V	±20V	-	1.37W (Ta), 29.4W (Tc)	8 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLMS6802TRPBF	Infineon Technologies	MOSFET P-CH 20V 5.6A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro6?(TSOP-6) Package / Case: SOT-23-6	Package: SOT-23-6	Stock4,360,272	MOSFET (Metal Oxide)	20V	5.6A (Ta)	2.5V, 4.5V	1.2V @ 250µA	16nC @ 5V	1079pF @ 10V	±12V	-	2W (Ta)	50 mOhm @ 5.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)	SOT-23-6
IRFB9N60APBF	Vishay Siliconix	MOSFET N-CH 600V 9.2A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock11,196	MOSFET (Metal Oxide)	600V	9.2A (Tc)	10V	4V @ 250µA	49nC @ 10V	1400pF @ 25V	±30V	-	170W (Tc)	750 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMN2050L-7	Diodes Incorporated	MOSFET N-CH 20V 5.9A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock192,072	MOSFET (Metal Oxide)	20V	5.9A (Ta)	2V, 4.5V	1.4V @ 250µA	6.7nC @ 4.5V	532pF @ 10V	±12V	-	1.4W (Ta)	29 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMG2301U-7	Diodes Incorporated	MOSFET P-CH 20V 2.5A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock628,380	MOSFET (Metal Oxide)	20V	2.5A (Ta)	2.5V, 4.5V	1V @ 250µA	6.5nC @ 4.5V	608pF @ 6V	±8V	-	800mW (Ta)	130 mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
RQ6E060ATTCR	Rohm Semiconductor	MOSFET P-CH 30V 6A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock11,328	MOSFET (Metal Oxide)	30 V	6A (Ta)	4.5V, 10V	2.5V @ 1mA	25.9 nC @ 10 V	1200 pF @ 15 V	±20V	-	950mW (Ta)	26.4mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
IXTA102N15T-TRL	IXYS	MOSFET N-CH 150V 102A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 51A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	102A (Tc)	10V	5V @ 1mA	87 nC @ 10 V	5220 pF @ 25 V	±20V	-	455W (Tc)	18mOhm @ 51A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DI100N04PQ-AQ	Diotec Semiconductor	MOSFET PWRQFN 5X6 40V 0.0021OHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	2.4V @ 250µA	64 nC @ 10 V	4766 pF @ 20 V	±20V	-	83W (Tc)	2.1mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (5x6)	8-PowerTDFN
SCTWA40N120G2V	STMicroelectronics	DISCRETE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V Vgs (Max): +18V, -5V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	36A (Tc)	18V	4.9V @ 1mA	61 nC @ 18 V	1233 pF @ 800 V	+18V, -5V	-	278W (Tc)	100mOhm @ 20A, 18V	-55°C ~ 200°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
DMT3020LFVW-7	Diodes Incorporated	MOSFET N-CH 30V 38A POWERDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 (Type UX) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	38A (Tc)	4.5V, 10V	2.5V @ 250µA	7 nC @ 10 V	393 pF @ 15 V	±20V	-	1W (Ta)	17mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8 (Type UX)	8-PowerVDFN
FDWS9508L-F085	onsemi	MOSFET P-CH 40V 80A 8PQFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 20 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 214W (Tj) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	80A (Tc)	4.5V, 10V	3V @ 250µA	107 nC @ 10 V	4840 pF @ 20 V	±16V	-	214W (Tj)	4.9mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
MMSF4N01HDR2	onsemi	SMALL SIGNAL N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	5.8A (Ta)	2.7V, 4.5V	1.1V @ 250µA	13 nC @ 4.5 V	595 pF @ 10 V	±8V	-	2.5W (Ta)	45mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)