Page 1008 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPB80N10L
Infineon Technologies

MOSFET N-CH 100V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,708
BSP129L6906HTSA1
Infineon Technologies

MOSFET N-CH 240V 350MA SOT-223

Package: TO-261-4, TO-261AA

Stock6,896
IRF7322D1PBF
Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,696
IRLR014NPBF
Infineon Technologies

MOSFET N-CH 55V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock423,444
AOWF10T60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO262F

Package: TO-262-3 Full Pack, I2Pak

Stock6,160
FDP5500
Fairchild/ON Semiconductor

MOSFET N-CH 55V 80A TO-220AB

Package: TO-220-3

Stock6,012
AOTF2N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A TO220F

Package: TO-220-3 Full Pack

Stock114,504
ECH8656-TL-H
ON Semiconductor

MOSFET N-CH 20V 7.5A ECH8

Package: 8-SMD, Flat Lead

Stock2,592
ATP103-TL-H
ON Semiconductor

MOSFET P-CH 30V 55A ATPAK

Package: ATPAK (2 leads+tab)

Stock3,360
SI6433BDQ-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 4A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock699,876
NTLGF3501NT1G
ON Semiconductor

MOSFET N-CH 20V 2.8A 6-DFN

Package: 6-VDFN Exposed Pad

Stock5,936
IXTV30N60PS
IXYS

MOSFET N-CH 600V 30A PLUS220-SMD

Package: PLUS-220SMD

Stock6,016
PHP110NQ06LT,127
NXP

MOSFET N-CH 55V 75A TO220AB

Package: TO-220-3

Stock5,712
IRF9Z14STRL
Vishay Siliconix

MOSFET P-CH 60V 6.7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,808
IPA60R600E6XKSA1
Infineon Technologies

MOSFET N-CH 600V 7.3A TO220

Package: TO-220-3 Full Pack

Stock3,520
TN0104N3-G-P014
Microchip Technology

MOSFET N-CH 40V 0.45A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock2,800
DMP6110SVTQ-7
Diodes Incorporated

MOSFET BVDSS: 41V 60V TSOT26

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,232
STI76NF75
STMicroelectronics

MOSFET N-CH 75V 80A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock14,976
IPD90P04P405ATMA1
Infineon Technologies

MOSFET P-CH 40V 90A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,408
STU8NM50N
STMicroelectronics

MOSFET N-CH 500V 5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock21,444

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPB80N10L	Infineon Technologies	MOSFET N-CH 100V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,708	MOSFET (Metal Oxide)	100V	80A (Tc)	4.5V, 10V	2V @ 2mA	240nC @ 10V	4540pF @ 25V	±20V	-	250W (Tc)	14 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSP129L6906HTSA1	Infineon Technologies	MOSFET N-CH 240V 350MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 108pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,896	MOSFET (Metal Oxide)	240V	350mA (Ta)	0V, 10V	1V @ 108µA	5.7nC @ 5V	108pF @ 25V	±20V	Depletion Mode	1.8W (Ta)	6 Ohm @ 350mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IRF7322D1PBF	Infineon Technologies	MOSFET P-CH 20V 5.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,696	MOSFET (Metal Oxide)	20V	5.3A (Ta)	2.7V, 4.5V	700mV @ 250µA	29nC @ 4.5V	780pF @ 15V	±12V	Schottky Diode (Isolated)	2W (Ta)	62 mOhm @ 2.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRLR014NPBF	Infineon Technologies	MOSFET N-CH 55V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock423,444	MOSFET (Metal Oxide)	55V	10A (Tc)	4.5V, 10V	1V @ 250µA	7.9nC @ 5V	265pF @ 25V	±16V	-	28W (Tc)	140 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AOWF10T60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO262F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1346pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock6,160	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	35nC @ 10V	1346pF @ 100V	±30V	-	28W (Tc)	700 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262F	TO-262-3 Full Pack, I2Pak
FDP5500	Fairchild/ON Semiconductor	MOSFET N-CH 55V 80A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 269nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3565pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,012	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	269nC @ 20V	3565pF @ 25V	±20V	-	375W (Tc)	7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
AOTF2N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 2A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock114,504	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4.5V @ 250µA	11.4nC @ 10V	325pF @ 25V	±30V	-	31W (Tc)	4.4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
ECH8656-TL-H	ON Semiconductor	MOSFET N-CH 20V 7.5A ECH8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 17 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-ECH Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock2,592	MOSFET (Metal Oxide)	20V	7.5A (Ta)	1.8V, 4.5V	1.3V @ 1mA	10.8nC @ 4.5V	1060pF @ 10V	±10V	-	1.3W (Ta)	17 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	8-ECH	8-SMD, Flat Lead
ATP103-TL-H	ON Semiconductor	MOSFET P-CH 30V 55A ATPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2430pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 28A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock3,360	MOSFET (Metal Oxide)	30V	55A (Ta)	4.5V, 10V	-	47nC @ 10V	2430pF @ 10V	±20V	-	50W (Tc)	13 mOhm @ 28A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
SI6433BDQ-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 4A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.05W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock699,876	MOSFET (Metal Oxide)	12V	4A (Ta)	2.5V, 4.5V	1.5V @ 250µA	15nC @ 4.5V	-	±8V	-	1.05W (Ta)	40 mOhm @ 4.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
NTLGF3501NT1G	ON Semiconductor	MOSFET N-CH 20V 2.8A 6-DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN (3x3) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock5,936	MOSFET (Metal Oxide)	20V	2.8A (Ta)	2.5V, 4.5V	2V @ 250µA	10nC @ 4.5V	275pF @ 10V	±12V	-	1.14W (Ta)	90 mOhm @ 3.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN (3x3)	6-VDFN Exposed Pad
IXTV30N60PS	IXYS	MOSFET N-CH 600V 30A PLUS220-SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock6,016	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	5V @ 250µA	82nC @ 10V	5050pF @ 25V	±30V	-	540W (Tc)	240 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
PHP110NQ06LT,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3960pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,712	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	45nC @ 5V	3960pF @ 25V	±15V	-	200W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9Z14STRL	Vishay Siliconix	MOSFET P-CH 60V 6.7A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,808	MOSFET (Metal Oxide)	60V	6.7A (Tc)	10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	±20V	-	3.7W (Ta), 43W (Tc)	500 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPA60R600E6XKSA1	Infineon Technologies	MOSFET N-CH 600V 7.3A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,520	MOSFET (Metal Oxide)	600V	7.3A (Tc)	10V	3.5V @ 200µA	20.5nC @ 10V	440pF @ 100V	±20V	-	28W (Tc)	600 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
TN0104N3-G-P014	Microchip Technology	MOSFET N-CH 40V 0.45A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 1.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock2,800	MOSFET (Metal Oxide)	40V	450mA (Ta)	3V, 10V	1.6V @ 500µA	-	70pF @ 20V	±20V	-	1W (Tc)	1.8 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DMP6110SVTQ-7	Diodes Incorporated	MOSFET BVDSS: 41V 60V TSOT26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,232	MOSFET (Metal Oxide)	60V	7.3A (Ta)	4.5V, 10V	3V @ 250µA	17.2nC @ 10V	969pF @ 30V	±20V	-	1.8W (Ta)	105 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
STI76NF75	STMicroelectronics	MOSFET N-CH 75V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock14,976	MOSFET (Metal Oxide)	75V	80A (Tc)	10V	4V @ 250µA	160nC @ 10V	3700pF @ 25V	±20V	-	300W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IPD90P04P405ATMA1	Infineon Technologies	MOSFET P-CH 40V 90A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,408	MOSFET (Metal Oxide)	40V	90A (Tc)	10V	4V @ 250µA	154nC @ 10V	10300pF @ 25V	±20V	-	125W (Tc)	4.7 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
STU8NM50N	STMicroelectronics	MOSFET N-CH 500V 5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 790 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock21,444	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	14nC @ 10V	364pF @ 50V	±25V	-	45W (Tc)	790 mOhm @ 2.5A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDP5N50NZ	Fairchild/ON Semiconductor	MOSFET N-CH 500V 4.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock187,464	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	5V @ 250µA	12nC @ 10V	440pF @ 25V	±25V	-	78W (Tc)	1.5 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
RUU002N05T106	Rohm Semiconductor	MOSFET N-CH 50V 0.2A UMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock375,732	MOSFET (Metal Oxide)	50V	200mA (Ta)	1.2V, 4.5V	1V @ 1mA	-	25pF @ 10V	±8V	-	200mW (Ta)	2.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	UMT3	SC-70, SOT-323
RJ1L12BGNTLL	Rohm Semiconductor	NCH 60V 120A POWER MOSFET : RJ1L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,997	MOSFET (Metal Oxide)	60 V	120A (Tc)	4.5V, 10V	2.5V @ 500µA	175 nC @ 10 V	9000 pF @ 30 V	±20V	-	192W (Tc)	2.9mOhm @ 40A, 10V	150°C (TJ)	Surface Mount	TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
UPA620TT-E1-A	Renesas Electronics Corporation	MOSFET N-CH 20V 5A 6WSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 38mOhm @ 2.5A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-WSOF Package / Case: 6-SMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	5A (Ta)	-	1.5V @ 1mA	5.5 nC @ 4 V	450 pF @ 10 V	-	-	-	38mOhm @ 2.5A, 4.5V	-	Surface Mount	6-WSOF	6-SMD, Flat Leads
CP372-CT	Central Semiconductor Corp	MOSFET N-CH 60V DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJQ2460_R1_00001	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020B-6 Package / Case: 6-WDFN Exposed Pad	Package: -	Stock17,280	MOSFET (Metal Oxide)	60 V	3.2A (Ta)	4.5V, 10V	2.5V @ 250µA	9.3 nC @ 10 V	509 pF @ 15 V	±20V	-	2W (Ta)	75mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020B-6	6-WDFN Exposed Pad
R6002END3TL1	Rohm Semiconductor	MOSFET N-CH 600V 1.7A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,957	MOSFET (Metal Oxide)	600 V	1.7A (Tc)	10V	4V @ 1mA	6.5 nC @ 10 V	65 pF @ 25 V	±20V	-	26W (Tc)	3.4Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
APT20M20JFLL	Microchip Technology	MOSFET N-CH 200V 104A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 20mOhm @ 52A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	104A (Tc)	-	5V @ 2.5mA	110 nC @ 10 V	6850 pF @ 25 V	-	-	-	20mOhm @ 52A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC