Page 1011 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

JANTXV2N7228
Microsemi Corporation

MOSFET N-CH

Package: TO-254-3, TO-254AA (Straight Leads)

Stock7,920
IXFK44N50
IXYS

MOSFET N-CH 500V 44A TO-264AA

Package: TO-264-3, TO-264AA

Stock126,828
APTM50SKM19G
Microsemi Corporation

MOSFET N-CH 500V 163A SP6

Package: SP6

Stock2,560
IXFX90N60X
IXYS

MOSFET N-CH 600V 90A PLUS247

Package: TO-247-3

Stock3,664
APT14M100B
Microsemi Corporation

MOSFET N-CH 1000V 14A TO-247

Package: TO-247-3

Stock7,648
TK15A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 15A TO-220SIS

Package: TO-220-3 Full Pack

Stock5,584
TSM60NB260CI C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-220-3 Full Pack, Isolated Tab

Stock4,224
STF8N65M5
STMicroelectronics

MOSFET N-CH 650V 7A TO220FP

Package: TO-220-3 Full Pack

Stock15,516
IRLIZ34NPBF
Infineon Technologies

MOSFET N-CH 55V 22A TO220FP

Package: TO-220-3 Full Pack

Stock48,252
IPL60R210P6AUMA1
Infineon Technologies

MOSFET N-CH 600V 4VSON

Package: 4-PowerTSFN

Stock5,392
STH320N4F6-6
STMicroelectronics

MOSFET N-CH 40V 200A H2PAK-6

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock7,040
SIHH21N65E-T1-GE3
Vishay Siliconix

MOSFET N-CH 650V 20.3A PWRPAK8X8

Package: 8-PowerTDFN

Stock25,680
SQJ474EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 100V 26A SO8

Package: PowerPAK? SO-8

Stock27,960
DIT120N08
Diotec Semiconductor

MOSFET TO220AB N 80V 0.0049OHM

Package: -

Stock3,000
2N7002KHE3-TP
Micro Commercial Co

N-CHANNEL MOSFET SOT-23

Package: -

Stock3,303
ISK024NE2LM5AUSA1
Infineon Technologies

TRENCH <= 40V

Package: -

Request a Quote
XP4N2R5MT
YAGEO XSEMI

FET N-CH 40V 33.8A 125A PMPAK

Package: -

Stock3,000
FDB86566-F085
onsemi

MOSFET N-CH 60V 110A D2PAK

Package: -

Stock2,250
R6020ENZC17
Rohm Semiconductor

MOSFET N-CH 600V 20A TO3PF

Package: -

Stock900
DI035N10PT
Diotec Semiconductor

MOSFET POWERQFN 3X3 N 100V 35A 0

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
JANTXV2N7228	Microsemi Corporation	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 515 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock7,920	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	120nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	515 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
IXFK44N50	IXYS	MOSFET N-CH 500V 44A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock126,828	MOSFET (Metal Oxide)	500V	44A (Tc)	10V	4V @ 8mA	270nC @ 10V	8400pF @ 25V	±20V	-	500W (Tc)	120 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
APTM50SKM19G	Microsemi Corporation	MOSFET N-CH 500V 163A SP6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 163A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1136W (Tc) Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	Package: SP6	Stock2,560	MOSFET (Metal Oxide)	500V	163A	10V	5V @ 10mA	492nC @ 10V	22400pF @ 25V	±30V	-	1136W (Tc)	22.5 mOhm @ 81.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
IXFX90N60X	IXYS	MOSFET N-CH 600V 90A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1100W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,664	MOSFET (Metal Oxide)	600V	90A (Tc)	10V	4.5V @ 8mA	210nC @ 10V	8500pF @ 25V	±30V	-	1100W (Tc)	38 mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
APT14M100B	Microsemi Corporation	MOSFET N-CH 1000V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock7,648	MOSFET (Metal Oxide)	1000V	14A (Tc)	10V	5V @ 1mA	120nC @ 10V	3965pF @ 25V	±30V	-	500W (Tc)	900 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
TK15A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 15A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,584	MOSFET (Metal Oxide)	500V	15A (Ta)	10V	4V @ 1mA	40nC @ 10V	2300pF @ 25V	±30V	-	50W (Tc)	300 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TSM60NB260CI C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1273pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 32.1W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock4,224	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 250µA	30nC @ 10V	1273pF @ 100V	±30V	-	32.1W (Tc)	260 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
STF8N65M5	STMicroelectronics	MOSFET N-CH 650V 7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock15,516	MOSFET (Metal Oxide)	650V	7A (Tc)	10V	5V @ 250µA	15nC @ 10V	690pF @ 100V	±25V	-	25W (Tc)	600 mOhm @ 3.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IRLIZ34NPBF	Infineon Technologies	MOSFET N-CH 55V 22A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock48,252	MOSFET (Metal Oxide)	55V	22A (Tc)	4V, 10V	2V @ 250µA	25nC @ 5V	880pF @ 25V	±16V	-	37W (Tc)	35 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IPL60R210P6AUMA1	Infineon Technologies	MOSFET N-CH 600V 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 7.6A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	Package: 4-PowerTSFN	Stock5,392	MOSFET (Metal Oxide)	600V	19.2A (Tc)	10V	4.5V @ 630µA	37nC @ 10V	1750pF @ 100V	±20V	-	151W (Tc)	210 mOhm @ 7.6A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
STH320N4F6-6	STMicroelectronics	MOSFET N-CH 40V 200A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock7,040	MOSFET (Metal Oxide)	40V	200A (Tc)	10V	4V @ 250µA	240nC @ 10V	13800pF @ 15V	±20V	-	300W (Tc)	1.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-7, D2Pak (6 Leads + Tab)
SIHH21N65E-T1-GE3	Vishay Siliconix	MOSFET N-CH 650V 20.3A PWRPAK8X8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 8 x 8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock25,680	MOSFET (Metal Oxide)	650V	20.3A (Tc)	10V	4V @ 250µA	99nC @ 10V	2404pF @ 100V	±30V	-	156W (Tc)	170 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 8 x 8	8-PowerTDFN
SQJ474EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 100V 26A SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock27,960	MOSFET (Metal Oxide)	100V	26A (Tc)	4.5V, 10V	2.5V @ 250µA	30nC @ 10V	1100pF @ 25V	±20V	-	45W (Tc)	30 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
DIT120N08	Diotec Semiconductor	MOSFET TO220AB N 80V 0.0049OHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock3,000	MOSFET (Metal Oxide)	80 V	120A (Tc)	10V	4V @ 250µA	163 nC @ 10 V	6500 pF @ 25 V	±20V	-	220W (Tc)	6mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
2N7002KHE3-TP	Micro Commercial Co	N-CHANNEL MOSFET SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 340mA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock3,303	MOSFET (Metal Oxide)	60 V	340mA	4.5V, 10V	2.5V @ 1mA	-	40 pF @ 10 V	±20V	-	350mW	2.5Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
ISK024NE2LM5AUSA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 103A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 2.1W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-6-1 Package / Case: 6-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	20A (Ta), 103A (Tc)	4.5V, 10V	-	-	-	-	-	2.1W (Ta), 39W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-VSON-6-1	6-PowerVDFN
XP4N2R5MT	YAGEO XSEMI	FET N-CH 40V 33.8A 125A PMPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 33.8A (Ta), 125A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 69.4W (Tc) Rds On (Max) @ Id, Vgs: 2.55mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PMPAK® 5 x 6 Package / Case: 8-PowerLDFN	Package: -	Stock3,000	MOSFET (Metal Oxide)	40 V	33.8A (Ta), 125A (Tc)	10V	4V @ 250µA	112 nC @ 10 V	6080 pF @ 20 V	±20V	-	5W (Ta), 69.4W (Tc)	2.55mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PMPAK® 5 x 6	8-PowerLDFN
FDB86566-F085	onsemi	MOSFET N-CH 60V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tj) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,250	MOSFET (Metal Oxide)	60 V	110A (Tc)	10V	4V @ 250µA	110 nC @ 10 V	6655 pF @ 30 V	±20V	-	176W (Tj)	2.7mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6020ENZC17	Rohm Semiconductor	MOSFET N-CH 600V 20A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock900	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	4V @ 1mA	60 nC @ 10 V	1400 pF @ 25 V	±20V	-	120W (Tc)	196mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
DI035N10PT	Diotec Semiconductor	MOSFET POWERQFN 3X3 N 100V 35A 0 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	22 nC @ 10 V	1220 pF @ 15 V	±20V	-	25W (Tc)	18mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerWDFN
SIHFL9014TR-GE3	Vishay Siliconix	MOSFET P-CH 60V 1.8A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock7,050	MOSFET (Metal Oxide)	60 V	1.8A (Tc)	10V	4V @ 250µA	12 nC @ 10 V	270 pF @ 25 V	±20V	-	2W (Ta), 3.1W (Tc)	500mOhm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
BUZ101L	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
G1K3N10G	Goford Semiconductor	N100V, 5A,RD<130M@10V,VTH1V~2V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	Package: -	Stock2,304	MOSFET (Metal Oxide)	100 V	5A (Tc)	4.5V, 10V	2V @ 250µA	20 nC @ 10 V	644 pF @ 50 V	±20V	-	1.5W (Tc)	130mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-89	TO-243AA
SIHK075N60EF-T1GE3	Vishay Siliconix	E SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2954 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK®10 x 12 Package / Case: 8-PowerBSFN	Package: -	Stock6,078	MOSFET (Metal Oxide)	600 V	33A (Tc)	10V	5V @ 250µA	72 nC @ 10 V	2954 pF @ 100 V	±30V	-	192W (Tc)	71mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK®10 x 12	8-PowerBSFN
APT10026JFLL	Microchip Technology	MOSFET N-CH 1000V 30A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7114 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 260mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	30A (Tc)	-	5V @ 5mA	267 nC @ 10 V	7114 pF @ 25 V	-	-	-	260mOhm @ 15A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
SIHG039N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 63A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock870	MOSFET (Metal Oxide)	600 V	63A (Tc)	10V	5V @ 250µA	126 nC @ 10 V	4369 pF @ 100 V	±30V	-	357W (Tc)	39mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
DMN2310U-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT23 T&R 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock39,819	MOSFET (Metal Oxide)	20 V	1.6A (Ta)	1.8V, 4.5V	950mV @ 250µA	0.7 nC @ 4.5 V	38 pF @ 10 V	±8V	-	480mW (Ta)	175mOhm @ 300mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMNH6069SFVW-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	5A (Ta), 18A (Tc)	4.5V, 10V	3V @ 250µA	14 nC @ 10 V	740 pF @ 30 V	±20V	-	3W (Ta)	50mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN