Page 1017 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPD26N06S2L35ATMA1
Infineon Technologies

MOSFET N-CH 55V 30A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,128
IRLR9343PBF
Infineon Technologies

MOSFET P-CH 55V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,392
IRF1405STRR
Infineon Technologies

MOSFET N-CH 55V 131A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,848
SSM4K27CTTPL3
Toshiba Semiconductor and Storage

MOSFET N-CH 20V .5A CST4

Package: 4-SMD, No Lead

Stock3,440
SI1065X-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 1.18A SC89-6

Package: SOT-563, SOT-666

Stock108,000
APT31N60BCSG
Microsemi Corporation

MOSFET N-CH 600V 31A TO-247

Package: TO-247-3

Stock3,968
IXFV30N60PS
IXYS

MOSFET N-CH 600V 30A PLUS220-SMD

Package: PLUS-220SMD

Stock3,856
TSM80N1R2CI C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,576
APT28M120L
Microsemi Corporation

MOSFET N-CH 1200V 29A TO264

Package: TO-264-3, TO-264AA

Stock7,744
IRFZ44ZSTRRPBF
Infineon Technologies

MOSFET N-CH 55V 51A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock84,012
2N7002W
Fairchild/ON Semiconductor

MOSFET N-CH 60V 115MA SOT-323

Package: SC-70, SOT-323

Stock1,182,744
AO4485
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V 10A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock37,392
NDS7002A
Fairchild/ON Semiconductor

MOSFET N-CH 60V 280MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock6,148,344
PJD50P04_L2_00001
Panjit International Inc.

40V P-CHANNEL ENHANCEMENT MODE M

Package: -

Stock19,914
BSS138KT-TP
Micro Commercial Co

N-CHANNEL MOSFET, SOT-523

Package: -

Stock80,634
SISS46DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 12.5/45.3A PPAK

Package: -

Stock624
SIR876BDP-T1-RE3
Vishay Siliconix

N-CHANNEL 100-V (D-S) MOSFET POW

Package: -

Stock7,425
FCMT250N65S3
onsemi

MOSFET N-CH 650V 12A POWER88

Package: -

Stock9,000
IPD06P003NSAUMA1
Infineon Technologies

MOSFET P-CH 60V 22A TO252-3

Package: -

Request a Quote
R6509END3TL1
Rohm Semiconductor

650V 9A TO-252, LOW-NOISE POWER

Package: -

Stock13,320

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD26N06S2L35ATMA1	Infineon Technologies	MOSFET N-CH 55V 30A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 621pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,128	MOSFET (Metal Oxide)	55V	30A (Tc)	4.5V, 10V	2V @ 26µA	24nC @ 10V	621pF @ 25V	±20V	-	68W (Tc)	35 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR9343PBF	Infineon Technologies	MOSFET P-CH 55V 20A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,392	MOSFET (Metal Oxide)	55V	20A (Tc)	4.5V, 10V	1V @ 250µA	47nC @ 10V	660pF @ 50V	±20V	-	79W (Tc)	105 mOhm @ 3.4A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF1405STRR	Infineon Technologies	MOSFET N-CH 55V 131A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,848	MOSFET (Metal Oxide)	55V	131A (Tc)	10V	4V @ 250µA	260nC @ 10V	5480pF @ 25V	±20V	-	200W (Tc)	5.3 mOhm @ 101A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SSM4K27CTTPL3	Toshiba Semiconductor and Storage	MOSFET N-CH 20V .5A CST4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 174pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 205 mOhm @ 250mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST4 (1.2x0.8) Package / Case: 4-SMD, No Lead	Package: 4-SMD, No Lead	Stock3,440	MOSFET (Metal Oxide)	20V	500mA (Ta)	1.8V, 4V	1.1V @ 1mA	-	174pF @ 10V	±12V	-	400mW (Ta)	205 mOhm @ 250mA, 4V	150°C (TJ)	Surface Mount	CST4 (1.2x0.8)	4-SMD, No Lead
SI1065X-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 1.18A SC89-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 236mW (Ta) Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.18A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock108,000	MOSFET (Metal Oxide)	12V	-	1.8V, 4.5V	950mV @ 250µA	10.8nC @ 5V	480pF @ 6V	±8V	-	236mW (Ta)	156 mOhm @ 1.18A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-6	SOT-563, SOT-666
APT31N60BCSG	Microsemi Corporation	MOSFET N-CH 600V 31A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3055pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,968	MOSFET (Metal Oxide)	600V	31A (Tc)	10V	3.9V @ 1.2mA	85nC @ 10V	3055pF @ 25V	±30V	-	255W (Tc)	100 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXFV30N60PS	IXYS	MOSFET N-CH 600V 30A PLUS220-SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock3,856	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	5V @ 4mA	82nC @ 10V	4000pF @ 25V	±30V	-	500W (Tc)	240 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
TSM80N1R2CI C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,576	MOSFET (Metal Oxide)	800V	5.5A (Tc)	10V	4V @ 250µA	19.4nC @ 10V	685pF @ 100V	±30V	-	25W (Tc)	1.2 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
APT28M120L	Microsemi Corporation	MOSFET N-CH 1200V 29A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,744	MOSFET (Metal Oxide)	1200V	29A (Tc)	10V	5V @ 2.5mA	300nC @ 10V	9670pF @ 25V	±30V	-	1135W (Tc)	530 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
IRFZ44ZSTRRPBF	Infineon Technologies	MOSFET N-CH 55V 51A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock84,012	MOSFET (Metal Oxide)	55V	51A (Tc)	10V	4V @ 250µA	43nC @ 10V	1420pF @ 25V	±20V	-	80W (Tc)	13.9 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2N7002W	Fairchild/ON Semiconductor	MOSFET N-CH 60V 115MA SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock1,182,744	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2V @ 250µA	-	50pF @ 25V	±20V	-	200mW (Ta)	7.5 Ohm @ 50mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
AO4485	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 40V 10A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock37,392	MOSFET (Metal Oxide)	40V	10A (Ta)	4.5V, 10V	2.5V @ 250µA	55nC @ 10V	3000pF @ 20V	±20V	-	1.7W (Ta)	15 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NDS7002A	Fairchild/ON Semiconductor	MOSFET N-CH 60V 280MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,148,344	MOSFET (Metal Oxide)	60V	280mA (Ta)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	300mW (Ta)	2 Ohm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-23 (TO-236AB)	TO-236-3, SC-59, SOT-23-3
PJD50P04_L2_00001	Panjit International Inc.	40V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock19,914	MOSFET (Metal Oxide)	40 V	9A (Ta), 50A (Tc)	4.5V, 10V	2.5V @ 250µA	23 nC @ 4.5 V	2767 pF @ 25 V	±20V	-	2W (Ta), 63W (Tc)	12mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSS138KT-TP	Micro Commercial Co	N-CHANNEL MOSFET, SOT-523 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 250mA Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 22.8 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250mW Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock80,634	MOSFET (Metal Oxide)	50 V	250mA	-	1.5V @ 250µA	0.7 nC @ 4.5 V	22.8 pF @ 25 V	±20V	-	250mW	1.6Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
SISS46DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 100V 12.5/45.3A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock624	MOSFET (Metal Oxide)	100 V	12.5A (Ta), 45.3A (Tc)	7.5V, 10V	3.4V @ 250µA	42 nC @ 10 V	2140 pF @ 50 V	±20V	-	5W (Ta), 65.7W (Tc)	12.8mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
SIR876BDP-T1-RE3	Vishay Siliconix	N-CHANNEL 100-V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 51.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock7,425	MOSFET (Metal Oxide)	100 V	13.6A (Ta), 51.4A (Tc)	4.5V, 10V	2.4V @ 250µA	65 nC @ 10 V	3040 pF @ 50 V	±20V	-	5W (Ta), 71.4W (Tc)	10.8mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
FCMT250N65S3	onsemi	MOSFET N-CH 650V 12A POWER88 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power88 Package / Case: 4-PowerTSFN	Package: -	Stock9,000	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	4.5V @ 1.2mA	24 nC @ 10 V	1010 pF @ 400 V	±30V	-	90W (Tc)	250mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power88	4-PowerTSFN
IPD06P003NSAUMA1	Infineon Technologies	MOSFET P-CH 60V 22A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.04mA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	22A (Tc)	10V	4V @ 1.04mA	39 nC @ 10 V	1600 pF @ 30 V	±20V	-	83W (Tc)	65mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6509END3TL1	Rohm Semiconductor	650V 9A TO-252, LOW-NOISE POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock13,320	MOSFET (Metal Oxide)	650 V	9A (Tc)	10V	4V @ 230µA	24 nC @ 10 V	430 pF @ 25 V	±20V	-	94W (Tc)	585mOhm @ 2.8A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMTH6005LFGQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.38W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	17A (Ta), 98A (Tc)	4.5V, 10V	2.5V @ 250µA	47.5 nC @ 10 V	3223 pF @ 30 V	±20V	-	2.38W (Ta), 75W (Tc)	4.1mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
SI4835DY	Fairchild Semiconductor	P-CHANNEL MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	8.8A (Ta)	4.5V, 10V	3V @ 250µA	27 nC @ 10 V	1680 pF @ 15 V	±25V	-	1W (Ta)	20mOhm @ 8.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
TPHR9003NL1-LQ	Toshiba Semiconductor and Storage	UMOS9 SOP-ADV(N) PD=78W F=1MHZ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5.75) Package / Case: 8-PowerTDFN	Package: -	Stock34,062	MOSFET (Metal Oxide)	30 V	150A (Tc)	4.5V, 10V	2.3V @ 1mA	74 nC @ 10 V	6900 pF @ 15 V	±20V	-	800mW (Ta), 170W (Tc)	0.9mOhm @ 50A, 10V	150°C	Surface Mount	8-SOP Advance (5x5.75)	8-PowerTDFN
IPP023N08N5XKSA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 208µA Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	120A (Tc)	6V, 10V	3.8V @ 208µA	166 nC @ 10 V	12100 pF @ 40 V	±20V	-	300W (Tc)	2.3mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPB019N08N3GATMA1	Infineon Technologies	MOSFET N-CH 80V 180A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Stock22,866	MOSFET (Metal Oxide)	80 V	180A (Tc)	6V, 10V	3.5V @ 270µA	206 nC @ 10 V	14200 pF @ 40 V	±20V	-	300W (Tc)	1.9mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2PAK (6 Leads + Tab)
C3M0160120J-TR	Wolfspeed, Inc.	SIC, MOSFET, 160M, 1200V, TO-263 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 2.33mA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock2,400	SiC (Silicon Carbide Junction Transistor)	1200 V	17A (Tc)	15V	3.6V @ 2.33mA	24 nC @ 15 V	632 pF @ 1000 V	+15V, -4V	-	90W (Tc)	208mOhm @ 8.5A, 15V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
AO4484L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 10A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	10A (Ta)	4.5V, 10V	3V @ 250µA	37 nC @ 10 V	1950 pF @ 20 V	±20V	-	1.7W (Ta)	10mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
PJT7413_S1_00001	Panjit International Inc.	20V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: -	Stock23,655	MOSFET (Metal Oxide)	20 V	2.5A (Ta)	1.5V, 4.5V	1.2V @ 250µA	7 nC @ 4.5 V	522 pF @ 10 V	±12V	-	750mW (Ta)	85mOhm @ 2.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-363	6-TSSOP, SC-88, SOT-363