Page 1016 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3704ZCSTRRP
Infineon Technologies

MOSFET N-CH 20V 67A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,552
SFT1341-E
ON Semiconductor

MOSFET P-CH

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock144,000
FDP34N33
Fairchild/ON Semiconductor

MOSFET N-CH 330V 34A TO-220

Package: TO-220-3

Stock5,488
PMF780SN,115
NXP

MOSFET N-CH 60V 570MA SOT323

Package: SC-70, SOT-323

Stock3,952
STD60N3LH5
STMicroelectronics

MOSFET N-CH 30V 48A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,070,184
STF9NM50N
STMicroelectronics

MOSFET N-CH 500V 7.5A TO-220FP

Package: TO-220-3 Full Pack

Stock14,232
IPI70N10SL16AKSA1
Infineon Technologies

MOSFET N-CH 100V 70A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,144
IRFP27N60K
Vishay Siliconix

MOSFET N-CH 600V 27A TO-247AC

Package: TO-247-3

Stock16,572
IXTA08N120P
IXYS

MOSFET N-CH 1200V 0.8A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,088
DMN3033LSNQ-13
Diodes Incorporated

MOSFET N-CH 30V 6A SC59-3

Package: TO-236-3, SC-59, SOT-23-3

Stock5,968
BUK9Y8R5-80EX
Nexperia USA Inc.

MOSFET N-CH 80V 100A LFPAK

Package: SC-100, SOT-669

Stock6,112
BUK7Y53-100B,115
Nexperia USA Inc.

MOSFET N-CH 100V 24.8A LFPAK

Package: SC-100, SOT-669

Stock2,368
IXTH1N300P3HV
IXYS

2000V TO 3000V POLAR3 POWER MOSF

Package: TO-247-3 Variant

Stock5,104
ZXMP7A17GQTA
Diodes Incorporated

MOSFET P-CH 70V 2.6A SOT223

Package: TO-261-4, TO-261AA

Stock6,240
CDM22010-650 SL
Central Semiconductor Corp

MOSFET N-CH 10A 650V TO220

Package: TO-220-3

Stock20,148
SSM6J414TU,LF
Toshiba Semiconductor and Storage

MOSFET P CH 20V 6A UF6

Package: 6-SMD, Flat Leads

Stock216,000
NTD2955-1G
ON Semiconductor

MOSFET P-CH 60V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock324,864
NTB5605PT4G
ON Semiconductor

MOSFET P-CH 60V 18.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock289,416
BSC028N06NSTATMA1
Infineon Technologies

MOSFET N-CH 60V 24A/100A TDSON

Package: -

Stock35,973
PJD14P10A_L2_00001
Panjit International Inc.

100V P-CHANNEL MOSFET

Package: -

Stock13,137

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3704ZCSTRRP	Infineon Technologies	MOSFET N-CH 20V 67A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,552	MOSFET (Metal Oxide)	20V	67A (Tc)	4.5V, 10V	2.55V @ 250µA	13nC @ 4.5V	1220pF @ 10V	±20V	-	57W (Tc)	7.9 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFT1341-E	ON Semiconductor	MOSFET P-CH FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK/TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock144,000	MOSFET (Metal Oxide)	40V	10A (Ta)	1.8V, 4.5V	1.4V @ 1mA	8nC @ 4.5V	650pF @ 20V	±10V	-	1W (Ta), 15W (Tc)	112 mOhm @ 5A, 4.5V	150°C (TJ)	Through Hole	IPAK/TP	TO-251-3 Short Leads, IPak, TO-251AA
FDP34N33	Fairchild/ON Semiconductor	MOSFET N-CH 330V 34A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 330V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,488	MOSFET (Metal Oxide)	330V	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220-3	TO-220-3
PMF780SN,115	NXP	MOSFET N-CH 60V 570MA SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 570mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560mW (Tc) Rds On (Max) @ Id, Vgs: 920 mOhm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock3,952	MOSFET (Metal Oxide)	60V	570mA (Ta)	10V	2V @ 250µA	1.05nC @ 10V	23pF @ 30V	±20V	-	560mW (Tc)	920 mOhm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323-3	SC-70, SOT-323
STD60N3LH5	STMicroelectronics	MOSFET N-CH 30V 48A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,070,184	MOSFET (Metal Oxide)	30V	48A (Tc)	5V, 10V	3V @ 250µA	8.8nC @ 5V	1350pF @ 25V	±20V	-	60W (Tc)	8 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STF9NM50N	STMicroelectronics	MOSFET N-CH 500V 7.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock14,232	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4V @ 250µA	20nC @ 10V	570pF @ 50V	±25V	-	25W (Tc)	560 mOhm @ 3.7A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPI70N10SL16AKSA1	Infineon Technologies	MOSFET N-CH 100V 70A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,144	MOSFET (Metal Oxide)	100V	70A (Tc)	4.5V, 10V	2V @ 2mA	240nC @ 10V	4540pF @ 25V	±20V	-	250W (Tc)	16 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFP27N60K	Vishay Siliconix	MOSFET N-CH 600V 27A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock16,572	MOSFET (Metal Oxide)	600V	27A (Tc)	10V	5V @ 250µA	180nC @ 10V	4660pF @ 25V	±30V	-	500W (Tc)	220 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXTA08N120P	IXYS	MOSFET N-CH 1200V 0.8A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 25 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,088	MOSFET (Metal Oxide)	1200V	800mA (Tc)	10V	4.5V @ 50µA	14nC @ 10V	333pF @ 25V	±20V	-	50W (Tc)	25 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMN3033LSNQ-13	Diodes Incorporated	MOSFET N-CH 30V 6A SC59-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,968	MOSFET (Metal Oxide)	30V	6A (Ta)	4.5V, 10V	2.1V @ 250µA	10.5nC @ 5V	755pF @ 10V	±20V	-	1.4W (Ta)	30 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-59	TO-236-3, SC-59, SOT-23-3
BUK9Y8R5-80EX	Nexperia USA Inc.	MOSFET N-CH 80V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 54.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 8167pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 238W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,112	MOSFET (Metal Oxide)	80V	100A (Tc)	5V	2.1V @ 1mA	54.7nC @ 5V	8167pF @ 25V	±10V	-	238W (Tc)	8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK7Y53-100B,115	Nexperia USA Inc.	MOSFET N-CH 100V 24.8A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1467pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 53 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,368	MOSFET (Metal Oxide)	100V	24.8A (Tc)	10V	4V @ 1mA	22nC @ 10V	1467pF @ 25V	±20V	-	85W (Tc)	53 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IXTH1N300P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 3000V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 50 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock5,104	MOSFET (Metal Oxide)	3000V	1A (Tc)	10V	4V @ 250µA	30.6nC @ 10V	895pF @ 25V	±20V	-	195W (Tc)	50 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247HV	TO-247-3 Variant
ZXMP7A17GQTA	Diodes Incorporated	MOSFET P-CH 70V 2.6A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,240	MOSFET (Metal Oxide)	70V	2.6A (Ta)	4.5V, 10V	1V @ 250µA	18nC @ 10V	635pF @ 40V	±20V	-	2W (Ta)	160 mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
CDM22010-650 SL	Central Semiconductor Corp	MOSFET N-CH 10A 650V TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1168pF @ 25V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock20,148	MOSFET (Metal Oxide)	650V	10A (Ta)	10V	4V @ 250µA	20nC @ 10V	1168pF @ 25V	30V	-	2W (Ta), 156W (Tc)	1 Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SSM6J414TU,LF	Toshiba Semiconductor and Storage	MOSFET P CH 20V 6A UF6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 6A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UF6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock216,000	MOSFET (Metal Oxide)	20V	6A (Ta)	1.5V, 4.5V	1V @ 1mA	23.1nC @ 4.5V	1650pF @ 10V	±8V	-	1W (Ta)	22.5 mOhm @ 6A, 4.5V	150°C (TJ)	Surface Mount	UF6	6-SMD, Flat Leads
NTD2955-1G	ON Semiconductor	MOSFET P-CH 60V 12A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tj) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock324,864	MOSFET (Metal Oxide)	60V	12A (Ta)	10V	4V @ 250µA	30nC @ 10V	750pF @ 25V	±20V	-	55W (Tj)	180 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTB5605PT4G	ON Semiconductor	MOSFET P-CH 60V 18.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 8.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock289,416	MOSFET (Metal Oxide)	60V	18.5A (Ta)	5V	2V @ 250µA	22nC @ 5V	1190pF @ 25V	±20V	-	88W (Tc)	140 mOhm @ 8.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSC028N06NSTATMA1	Infineon Technologies	MOSFET N-CH 60V 24A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	Package: -	Stock35,973	MOSFET (Metal Oxide)	60 V	24A (Ta), 100A (Tc)	6V, 10V	3.3V @ 50µA	49 nC @ 10 V	3375 pF @ 30 V	±20V	-	3W (Ta), 100W (Tc)	2.8mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
PJD14P10A_L2_00001	Panjit International Inc.	100V P-CHANNEL MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2298 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock13,137	MOSFET (Metal Oxide)	100 V	2.5A (Ta), 14A (Tc)	4.5V, 10V	3V @ 250µA	40.7 nC @ 10 V	2298 pF @ 30 V	±20V	-	2W (Ta), 60W (Tc)	140mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJQ5423_R2_00001	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3228 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 Package / Case: 8-PowerVDFN	Package: -	Stock9,024	MOSFET (Metal Oxide)	30 V	11A (Ta), 60A (Tc)	4.5V, 10V	2.5V @ 250µA	27 nC @ 4.5 V	3228 pF @ 15 V	±20V	-	2W (Ta), 63W (Tc)	8.5mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
SI3434-TP	Micro Commercial Co	MOSFET N-CHANNEL 30V 5A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5A (Tj)	2.5V, 10V	1V @ 250µA	10 nC @ 10 V	245 pF @ 15 V	±10V	-	-	42mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
JANSF2N7383	Microsemi Corporation	P CHANNEL MOSFET TO-257 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	6.5A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
FDP8442-F085	Fairchild Semiconductor	POWER FIELD-EFFECT TRANSISTOR, 2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	23A (Ta), 80A (Tc)	10V	4V @ 250µA	235 nC @ 10 V	12200 pF @ 25 V	±20V	-	254W (Tc)	3.1mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
6LN04MH-TL-E	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STP80N340K6	STMicroelectronics	DISCRETE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	12A (Tc)	10V	4V @ 100µA	17.8 nC @ 10 V	950 pF @ 400 V	±30V	-	115W (Tc)	340mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SI3440ADV-T1-GE3	Vishay Siliconix	MOSFET N-CH 150V 2.2A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	2.2A (Tc)	7.5V, 10V	4V @ 250µA	4 nC @ 10 V	80 pF @ 75 V	±20V	-	3.6W (Tc)	380mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
TK62N60W5-S1VF	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3.1mA Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock111	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	4.5V @ 3.1mA	205 nC @ 10 V	6500 pF @ 300 V	±30V	-	400W (Tc)	45mOhm @ 30.9A, 10V	150°C	Through Hole	TO-247	TO-247-3