Page 102 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI80CN10N G
Infineon Technologies

MOSFET N-CH 100V 13A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,160
IRFR9014N
Infineon Technologies

MOSFET P-CH 60V 5.1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,632
HUFA75329S3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 49A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,728
FQPF9N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 6A TO-220F

Package: TO-220-3 Full Pack

Stock6,704
STB141NF55-1
STMicroelectronics

MOSFET N-CH 55V 80A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,344
SIPC10N60C3X1SA2
Infineon Technologies

TRANSISTOR N-CH

Package: -

Stock7,232
FDA16N50LDTU
Fairchild/ON Semiconductor

UNIFET N-CHANNEL 500V MOSFET LDT

Package: TO-3P-3, SC-65-3

Stock5,344
NVTFS4823NWFTWG
ON Semiconductor

MOSFET N-CH 30V 30A U8FL

Package: 8-PowerWDFN

Stock2,208
TSM180P03CS RLG
TSC America Inc.

MOSFET, SINGLE, P-CHANNEL, -30V,

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,488
SI5853DDC-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 4A 1206-8

Package: 8-SMD, Flat Lead

Stock1,627,944
BSP324H6327XTSA1
Infineon Technologies

MOSFET N-CH 400V 170MA SOT-223

Package: TO-261-4, TO-261AA

Stock6,096
FDB045AN08A0_F085
Fairchild/ON Semiconductor

MOSFET N-CH 75V 19A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,064
FDMS86101A
Fairchild/ON Semiconductor

MOSFET N-CH 100V 13A POWER56

Package: 8-PowerTDFN

Stock4,608
BSZ035N03LSGATMA1
Infineon Technologies

MOSFET N-CH 30V 40A TSDSON-8

Package: 8-PowerTDFN

Stock59,964
FDD5612
Fairchild/ON Semiconductor

MOSFET N-CH 60V 5.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,183,776
IXFX34N80
IXYS

MOSFET N-CH 800V 34A PLUS247

Package: TO-247-3

Stock6,352
NDS356AP
Fairchild/ON Semiconductor

MOSFET P-CH 30V 1.1A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock2,021,436
DMP4013SPSQ-13
Diodes Incorporated

MOSFET P-CH 40V 11A PWRDI5060

Package: -

Stock774
PJD8NA50_R2_00001
Panjit International Inc.

500V N-CHANNEL MOSFET

Package: -

Request a Quote
AUIRFN8478TR
Infineon Technologies

AUIRFN8478 - 20V-40V N-CHANNEL A

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI80CN10N G	Infineon Technologies	MOSFET N-CH 100V 13A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 716pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,160	MOSFET (Metal Oxide)	100V	13A (Tc)	10V	4V @ 12µA	11nC @ 10V	716pF @ 50V	±20V	-	31W (Tc)	80 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFR9014N	Infineon Technologies	MOSFET P-CH 60V 5.1A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,632	MOSFET (Metal Oxide)	60V	5.1A (Tc)	10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	500 mOhm @ 3.1A, 10V	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA75329S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 49A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 49A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,728	MOSFET (Metal Oxide)	55V	49A (Tc)	10V	4V @ 250µA	75nC @ 20V	1060pF @ 25V	±20V	-	128W (Tc)	24 mOhm @ 49A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF9N30	Fairchild/ON Semiconductor	MOSFET N-CH 300V 6A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,704	MOSFET (Metal Oxide)	300V	6A (Tc)	10V	5V @ 250µA	22nC @ 10V	740pF @ 25V	±30V	-	42W (Tc)	450 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
STB141NF55-1	STMicroelectronics	MOSFET N-CH 55V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,344	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	142nC @ 10V	5300pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
SIPC10N60C3X1SA2	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,232	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDA16N50LDTU	Fairchild/ON Semiconductor	UNIFET N-CHANNEL 500V MOSFET LDT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 8.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,344	MOSFET (Metal Oxide)	500V	16.5A (Tc)	10V	5V @ 250µA	45nC @ 10V	1945pF @ 25V	±30V	-	205W (Tc)	380 mOhm @ 8.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-3P-3, SC-65-3
NVTFS4823NWFTWG	ON Semiconductor	MOSFET N-CH 30V 30A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,208	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2.5V @ 250µA	12nC @ 10V	750pF @ 12V	±20V	-	3.1W (Ta), 21W (Tc)	10.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
TSM180P03CS RLG	TSC America Inc.	MOSFET, SINGLE, P-CHANNEL, -30V, FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,488	MOSFET (Metal Oxide)	30V	10A (Tc)	4.5V, 10V	2.5V @ 250µA	23nC @ 4.5V	1730pF @ 15V	±20V	-	2.5W (Tc)	18 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SI5853DDC-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 4A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.3W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock1,627,944	MOSFET (Metal Oxide)	20V	4A (Tc)	1.8V, 4.5V	1V @ 250µA	12nC @ 8V	320pF @ 10V	±8V	Schottky Diode (Isolated)	1.3W (Ta), 3.1W (Tc)	105 mOhm @ 2.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
BSP324H6327XTSA1	Infineon Technologies	MOSFET N-CH 400V 170MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 154pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,096	MOSFET (Metal Oxide)	400V	170mA (Ta)	4.5V, 10V	2.3V @ 94µA	5.9nC @ 10V	154pF @ 25V	±20V	-	1.8W (Ta)	25 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
FDB045AN08A0_F085	Fairchild/ON Semiconductor	MOSFET N-CH 75V 19A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,064	MOSFET (Metal Oxide)	75V	19A (Ta)	6V, 10V	4V @ 250µA	138nC @ 10V	6600pF @ 25V	±20V	-	310W (Tc)	4.5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS86101A	Fairchild/ON Semiconductor	MOSFET N-CH 100V 13A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4120pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,608	MOSFET (Metal Oxide)	100V	13A (Ta), 60A (Tc)	6V, 10V	4V @ 250µA	58nC @ 10V	4120pF @ 50V	±20V	-	2.5W (Ta), 104W (Tc)	8 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
BSZ035N03LSGATMA1	Infineon Technologies	MOSFET N-CH 30V 40A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock59,964	MOSFET (Metal Oxide)	30V	20A (Ta), 40A (Tc)	4.5V, 10V	2.2V @ 250µA	56nC @ 10V	4400pF @ 15V	±20V	-	2.1W (Ta), 69W (Tc)	3.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
FDD5612	Fairchild/ON Semiconductor	MOSFET N-CH 60V 5.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,183,776	MOSFET (Metal Oxide)	60V	5.4A (Ta)	6V, 10V	3V @ 250µA	11nC @ 10V	660pF @ 30V	±20V	-	3.8W (Ta), 42W (Tc)	55 mOhm @ 5.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFX34N80	IXYS	MOSFET N-CH 800V 34A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,352	MOSFET (Metal Oxide)	800V	34A (Tc)	10V	5V @ 8mA	270nC @ 10V	7500pF @ 25V	±20V	-	560W (Tc)	240 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
NDS356AP	Fairchild/ON Semiconductor	MOSFET P-CH 30V 1.1A SSOT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,021,436	MOSFET (Metal Oxide)	30V	1.1A (Ta)	4.5V, 10V	2.5V @ 250µA	4.4nC @ 5V	280pF @ 10V	±20V	-	500mW (Ta)	200 mOhm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
DMP4013SPSQ-13	Diodes Incorporated	MOSFET P-CH 40V 11A PWRDI5060 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Stock774	MOSFET (Metal Oxide)	40 V	11A (Ta), 61A (Tc)	4.5V, 10V	3V @ 250µA	67 nC @ 10 V	4004 pF @ 20 V	±20V	-	1.6W (Ta)	15mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
PJD8NA50_R2_00001	Panjit International Inc.	500V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 826 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	8A (Ta)	10V	4V @ 250µA	16.2 nC @ 10 V	826 pF @ 25 V	±30V	-	-	900mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
AUIRFN8478TR	Infineon Technologies	AUIRFN8478 - 20V-40V N-CHANNEL A FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDI9406-F085	Fairchild Semiconductor	FDI9406 - N-CHANNEL POWERTRENCH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tj) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	110A (Tc)	10V	4V @ 250µA	138 nC @ 10 V	7710 pF @ 25 V	±20V	-	176W (Tj)	2.2mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2PAK, TO-262AA
NTTFS6H854NLTAG	onsemi	MOSFET N-CH 80V 10A/41A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock4,500	MOSFET (Metal Oxide)	80 V	10A (Ta), 41A (Tc)	4.5V, 10V	2V @ 45µA	17 nC @ 10 V	902 pF @ 40 V	±20V	-	3.2W (Ta), 54W (Tc)	13.4mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
CP805-CXDM4060P-CT	Central Semiconductor Corp	MOSFET P-CH 40V 6.4A DIE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	6.4A (Ta)	-	3V @ 250µA	-	-	±20V	-	-	31mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
TSM80N1R2CL	Taiwan Semiconductor Corporation	800V, 5.5A, SINGLE N-CHANNEL POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	5.5A (Tc)	10V	4V @ 250µA	19.4 nC @ 10 V	685 pF @ 100 V	±30V	-	110W (Tc)	1.2Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2PAK, TO-262AA
NDS355AN-NL-ML	MOSLEADER	N-Channel 30V 1.7A SOT-23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP610DL-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SOT23 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock29,925	MOSFET (Metal Oxide)	60 V	180mA (Ta)	5V	2V @ 1mA	0.56 nC @ 10 V	24.6 pF @ 25 V	±30V	-	310mW (Ta)	10Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SISHA06DN-T1-GE3	Vishay Siliconix	N-CHANNEL 30 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH	Package: -	Stock35,790	MOSFET (Metal Oxide)	30 V	28.1A (Ta), 104A (Tc)	4.5V, 10V	2.4V @ 250µA	67 nC @ 10 V	3932 pF @ 15 V	+20V, -16V	-	3.7W (Ta), 52W (Tc)	3mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH
TJ20A10M3-STA4-Q	Toshiba Semiconductor and Storage	TJ20A10M3(STA4,Q FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	20A (Ta)	10V	4V @ 1mA	120 nC @ 10 V	5500 pF @ 10 V	±20V	-	35W (Tc)	90mOhm @ 10A, 10V	150°C	Through Hole	TO-220SIS	TO-220-3 Full Pack