Page 104 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BMS4003
ON Semiconductor

MOSFET N-CH 100V 18A TO-220ML

Package: TO-220-3 Full Pack

Stock4,880
IXTU05N120
IXYS

MOSFET N-CH 1200V 0.5A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,856
PSMN010-55D,118
NXP

MOSFET N-CH 55V 75A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,752
ZVN0540ASTOB
Diodes Incorporated

MOSFET N-CH 400V 0.09A TO92-3

Package: E-Line-3

Stock5,200
BS170_L34Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock3,280
NTD23N03R-001
ON Semiconductor

MOSFET N-CH 25V 3.8A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,368
IRL3303D1STRR
Vishay Siliconix

MOSFET N-CH 30V 38A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,128
IXTX8N150L
IXYS

MOSFET N-CH 1500V 8A PLUS247

Package: TO-247-3

Stock2,224
NVMFS5826NLWFT1G
ON Semiconductor

MOSFET N-CH 60V 26A SO8FL

Package: 8-PowerTDFN

Stock6,256
AUIRF540Z
Infineon Technologies

MOSFET N-CH 100V 36A TO220AB

Package: TO-220-3

Stock21,060
IXFT24N90P
IXYS

MOSFET N-CH TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock6,624
BSO083N03MSGXUMA1
Infineon Technologies

MOSFET N-CH 30V 11A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,272
SQD50P04-13L_GE3
Vishay Siliconix

MOSFET P-CH 40V 50A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,720
SQJ411EP-T1_GE3
Vishay Siliconix

MOSFET P-CH 12V 60A SO8

Package: PowerPAK? SO-8

Stock3,024
SI3469DV-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 5A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock416,340
SIS436DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 16A PPAK 1212-8

Package: PowerPAK? 1212-8

Stock36,000
IPD320N20N3GATMA1
Infineon Technologies

MOSFET N-CH 200V 34A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock54,792
AO4447A
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 17A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock108,122,892
GT700P08D3
Goford Semiconductor

P-80V,-16A,RD(MAX)<75M@-10V,VTH-

Package: -

Stock14,895
SSM6K819R-LXHF
Toshiba Semiconductor and Storage

AUTO AEC-Q SS MOS N-CH LOGIC-LEV

Package: -

Stock22,260

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BMS4003	ON Semiconductor	MOSFET N-CH 100V 18A TO-220ML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220ML Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,880	MOSFET (Metal Oxide)	100V	18A (Ta)	10V	5V @ 1mA	11.4nC @ 10V	680pF @ 20V	±30V	-	2W (Ta), 25W (Tc)	65 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220ML	TO-220-3 Full Pack
IXTU05N120	IXYS	MOSFET N-CH 1200V 0.5A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,856	MOSFET (Metal Oxide)	1200V	500mA (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
PSMN010-55D,118	NXP	MOSFET N-CH 55V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 20V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,752	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	55nC @ 5V	3300pF @ 20V	±15V	-	125W (Tc)	10.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
ZVN0540ASTOB	Diodes Incorporated	MOSFET N-CH 400V 0.09A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock5,200	MOSFET (Metal Oxide)	400V	90mA (Ta)	10V	3V @ 1mA	-	70pF @ 25V	±20V	-	700mW (Ta)	50 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
BS170_L34Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock3,280	MOSFET (Metal Oxide)	60V	500mA (Ta)	-	3V @ 1mA	-	40pF @ 10V	-	-	830mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
NTD23N03R-001	ON Semiconductor	MOSFET N-CH 25V 3.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,368	MOSFET (Metal Oxide)	25V	3.8A (Ta), 17.1A (Tc)	4V, 5V	2V @ 250µA	3.76nC @ 4.5V	225pF @ 20V	±20V	-	1.14W (Ta), 22.3W (Tc)	45 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRL3303D1STRR	Vishay Siliconix	MOSFET N-CH 30V 38A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,128	MOSFET (Metal Oxide)	30V	38A (Tc)	4.5V, 10V	1V @ 250µA	26nC @ 4.5V	870pF @ 25V	±16V	-	68W (Tc)	26 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTX8N150L	IXYS	MOSFET N-CH 1500V 8A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 4A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock2,224	MOSFET (Metal Oxide)	1500V	8A (Tc)	20V	8V @ 250µA	250nC @ 15V	8000pF @ 25V	±30V	-	700W (Tc)	3.6 Ohm @ 4A, 20V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
NVMFS5826NLWFT1G	ON Semiconductor	MOSFET N-CH 60V 26A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,256	MOSFET (Metal Oxide)	60V	8A (Ta)	4.5V, 10V	2.5V @ 250µA	17nC @ 10V	850pF @ 25V	±20V	-	3.6W (Ta), 39W (Tc)	24 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
AUIRF540Z	Infineon Technologies	MOSFET N-CH 100V 36A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock21,060	MOSFET (Metal Oxide)	100V	36A (Tc)	10V	4V @ 250µA	63nC @ 10V	1770pF @ 25V	±20V	-	92W (Tc)	26.5 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFT24N90P	IXYS	MOSFET N-CH TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock6,624	MOSFET (Metal Oxide)	900V	24A (Tc)	10V	6.5V @ 1mA	130nC @ 10V	7200pF @ 25V	±30V	-	660W (Tc)	420 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
BSO083N03MSGXUMA1	Infineon Technologies	MOSFET N-CH 30V 11A 8DSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,272	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2V @ 250µA	27nC @ 10V	2100pF @ 15V	±20V	-	1.56W (Ta)	8.3 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
SQD50P04-13L_GE3	Vishay Siliconix	MOSFET P-CH 40V 50A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,720	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	90nC @ 10V	3590pF @ 20V	±20V	-	3W (Ta), 136W (Tc)	13 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SQJ411EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 12V 60A SO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock3,024	MOSFET (Metal Oxide)	12V	60A (Tc)	2.5V, 4.5V	1.5V @ 250µA	150nC @ 4.5V	9100pF @ 6V	±8V	-	68W (Tc)	5.8 mOhm @ 15A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI3469DV-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 5A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock416,340	MOSFET (Metal Oxide)	20V	5A (Ta)	4.5V, 10V	3V @ 250µA	30nC @ 10V	-	±20V	-	1.14W (Ta)	30 mOhm @ 6.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SIS436DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 16A PPAK 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock36,000	MOSFET (Metal Oxide)	25V	16A (Tc)	4.5V, 10V	2.3V @ 250µA	22nC @ 10V	855pF @ 10V	±20V	-	3.5W (Ta), 27.7W (Tc)	10.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
IPD320N20N3GATMA1	Infineon Technologies	MOSFET N-CH 200V 34A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock54,792	MOSFET (Metal Oxide)	200V	34A (Tc)	10V	4V @ 90µA	29nC @ 10V	2350pF @ 100V	±20V	-	136W (Tc)	32 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
AO4447A	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 17A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock108,122,892	MOSFET (Metal Oxide)	30V	17A (Ta)	4V, 10V	1.6V @ 250µA	105nC @ 10V	5500pF @ 15V	±20V	-	3.1W (Ta)	7 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
GT700P08D3	Goford Semiconductor	P-80V,-16A,RD(MAX)<75M@-10V,VTH- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3.15x3.05) Package / Case: 8-PowerVDFN	Package: -	Stock14,895	MOSFET (Metal Oxide)	80 V	16A (Tc)	10V	3.5V @ 250µA	75 nC @ 10 V	1591 pF @ 40 V	±20V	-	69W (Tc)	75mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3.15x3.05)	8-PowerVDFN
SSM6K819R-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q SS MOS N-CH LOGIC-LEV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 6-TSOP-F Package / Case: 6-SMD, Flat Leads	Package: -	Stock22,260	MOSFET (Metal Oxide)	100 V	10A (Ta)	4.5V, 10V	2.5V @ 100µA	8.5 nC @ 4.5 V	1110 pF @ 15 V	±20V	-	1.5W (Ta)	25.8mOhm @ 4A, 10V	175°C	Surface Mount	6-TSOP-F	6-SMD, Flat Leads
RSS130N03HZGTB	Rohm Semiconductor	NCH 30V 13A AUTOMOTIVE POWER MOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock6,600	MOSFET (Metal Oxide)	30 V	13A (Ta)	4V, 10V	2.5V @ 1mA	35 nC @ 5 V	2000 pF @ 10 V	±20V	-	2W (Ta)	8.3mOhm @ 13A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
NTHL040N120SC1	onsemi	SICFET N-CH 1200V 60A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4.3V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V Vgs (Max): +25V, -15V FET Feature: - Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock81	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	20V	4.3V @ 10mA	106 nC @ 20 V	1781 pF @ 800 V	+25V, -15V	-	348W (Tc)	56mOhm @ 35A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
AUIRF9Z34N-INF	Infineon Technologies	AUTOMOTIVE HEXFET P CHANNEL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	19A (Tc)	10V	4V @ 250µA	35 nC @ 10 V	620 pF @ 25 V	±20V	-	68W (Tc)	100mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVD5802NT4G	onsemi	MOSFET N-CH 40V 16.4A/101A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	16.4A (Ta), 101A (Tc)	5V, 10V	3.5V @ 250µA	100 nC @ 10 V	5300 pF @ 12 V	±20V	-	2.5W (Ta), 93.75W (Tc)	4.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPP040N08NF2SAKMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 115A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock2,442	MOSFET (Metal Oxide)	80 V	22A (Ta), 115A (Tc)	6V, 10V	3.8V @ 85µA	81 nC @ 10 V	3800 pF @ 40 V	±20V	-	3.8W (Ta), 150W (Tc)	4mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
NTMTSC1D5N08MC	onsemi	MOSFET N-CH 80V 33A/287A 8DFNW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-TDFNW (8.3x8.4) Package / Case: 8-PowerTDFN	Package: -	Stock8,895	MOSFET (Metal Oxide)	80 V	33A (Ta), 287A (Tc)	6V, 10V	4V @ 650µA	140 nC @ 10 V	10400 pF @ 40 V	±20V	-	3.3W (Ta), 250W (Tc)	1.56mOhm @ 80A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	8-TDFNW (8.3x8.4)	8-PowerTDFN
DMN3009SFGQ-7	Diodes Incorporated	MOSFET N-CH 30V 16A PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2 nF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock2,850	MOSFET (Metal Oxide)	30 V	16A (Ta), 45A (Tc)	4.5V, 10V	2.5V @ 250µA	42 nC @ 10 V	2 nF @ 15 V	±20V	-	900mW (Ta)	5.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
FDN337N-F169	onsemi	MOSFET N-CH 30V 2.2A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	2.2A (Ta)	2.5V, 4.5V	1V @ 250µA	9 nC @ 4.5 V	300 pF @ 10 V	±8V	-	500mW (Ta)	65mOhm @ 2.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3