Page 1060 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR2705TRL
Infineon Technologies

MOSFET N-CH 55V 28A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock50,400
IRFM210BTF_FP001
Fairchild/ON Semiconductor

MOSFET N-CH 200V 0.77A SOT-223

Package: TO-261-4, TO-261AA

Stock7,920
NTJS4405NT4G
ON Semiconductor

MOSFET N-CH 25V 1A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock59,976
FQI6N60CTU
Fairchild/ON Semiconductor

MOSFET N-CH 600V 5.5A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,200
MTB30P06VT4
ON Semiconductor

MOSFET P-CH 60V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,604
IRF9Z24
Vishay Siliconix

MOSFET P-CH 60V 11A TO-220AB

Package: TO-220-3

Stock448,308
IPAW70R950CEXKSA1
Infineon Technologies

MOSFET N-CH 700V COOLMOS TO220-3

Package: TO-220-3 Full Pack

Stock3,888
TN2504N8-G
Microchip Technology

MOSFET N-CH 40V 0.89A SOT89-3

Package: TO-243AA

Stock134,412
UPA2813T1L-E2-AT
Renesas Electronics America

MOSFET P-CH 30V 27A 8HVSON

Package: 8-PowerVDFN

Stock43,128
DMNH6021SK3-13
Diodes Incorporated

MOSFET NCH 60V 50A TO252

Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

Stock7,248
IRF9530NPBF
Infineon Technologies

MOSFET P-CH 100V 14A TO-220AB

Package: TO-220-3

Stock7,452
AOT8N80L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 800V 7.4A TO220

Package: TO-220-3

Stock19,920
BSR606NH6327XTSA1
Infineon Technologies

MOSFET N-CH 60V 2.3A SC59

Package: TO-236-3, SC-59, SOT-23-3

Stock4,128
SPP21N50C3XKSA1
Infineon Technologies

MOSFET N-CH 500V 21A TO220-3

Package: TO-220-3

Stock19,296
SI4410BDY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 7.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock53,928
AO4484
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 13.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock9,636
STK130N4LF7AG
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 40 V,

Package: -

Stock354
AO6085N03
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 11A/50A 8DFN

Package: -

Request a Quote
SSFQ3905
Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -10A, -30V

Package: -

Stock17,985
MMFTP3160-AQ
Diotec Semiconductor

IC

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR2705TRL	Infineon Technologies	MOSFET N-CH 55V 28A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock50,400	MOSFET (Metal Oxide)	55V	28A (Tc)	4V, 10V	2V @ 250µA	25nC @ 5V	880pF @ 25V	±16V	-	68W (Tc)	40 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFM210BTF_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 200V 0.77A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 770mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 390mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,920	MOSFET (Metal Oxide)	200V	770mA (Tc)	10V	4V @ 250µA	9.3nC @ 10V	225pF @ 25V	±30V	-	2W (Ta)	1.5 Ohm @ 390mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
NTJS4405NT4G	ON Semiconductor	MOSFET N-CH 25V 1A SOT-363 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock59,976	MOSFET (Metal Oxide)	25V	1A (Ta)	2.7V, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	60pF @ 10V	±8V	-	630mW (Ta)	350 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
FQI6N60CTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 5.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,200	MOSFET (Metal Oxide)	600V	5.5A (Tc)	10V	4V @ 250µA	20nC @ 10V	810pF @ 25V	±30V	-	125W (Tc)	2 Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
MTB30P06VT4	ON Semiconductor	MOSFET P-CH 60V 30A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,604	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	80nC @ 10V	2190pF @ 25V	±15V	-	3W (Ta), 125W (Tc)	80 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9Z24	Vishay Siliconix	MOSFET P-CH 60V 11A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock448,308	MOSFET (Metal Oxide)	60V	11A (Tc)	10V	4V @ 250µA	19nC @ 10V	570pF @ 25V	±20V	-	60W (Tc)	280 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPAW70R950CEXKSA1	Infineon Technologies	MOSFET N-CH 700V COOLMOS TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO252 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,888	MOSFET (Metal Oxide)	700V	7.4A (Tc)	10V	3.5V @ 150µA	15.3nC @ 10V	328pF @ 100V	±20V	-	68W (Tc)	950 mOhm @ 1.5A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO252	TO-220-3 Full Pack
TN2504N8-G	Microchip Technology	MOSFET N-CH 40V 0.89A SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 890mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock134,412	MOSFET (Metal Oxide)	40V	890mA (Tj)	5V, 10V	1.6V @ 1mA	-	125pF @ 20V	±20V	-	1.6W (Tc)	1 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
UPA2813T1L-E2-AT	Renesas Electronics America	MOSFET P-CH 30V 27A 8HVSON FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 27A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HWSON (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock43,128	MOSFET (Metal Oxide)	30V	27A (Tc)	4.5V, 10V	-	80nC @ 10V	3130pF @ 10V	±20V	-	1.5W (Ta)	6.2 mOhm @ 27A, 10V	150°C (TJ)	Surface Mount	8-HWSON (3.3x3.3)	8-PowerVDFN
DMNH6021SK3-13	Diodes Incorporated	MOSFET NCH 60V 50A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-4L Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock7,248	MOSFET (Metal Oxide)	60V	50A (Tc)	4.5V, 10V	3V @ 250µA	20.1nC @ 10V	1143pF @ 25V	±20V	-	2.1W (Ta)	23 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-4L	TO-252-5, DPak (4 Leads + Tab), TO-252AD
IRF9530NPBF	Infineon Technologies	MOSFET P-CH 100V 14A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,452	MOSFET (Metal Oxide)	100V	14A (Tc)	10V	4V @ 250µA	58nC @ 10V	760pF @ 25V	±20V	-	79W (Tc)	200 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AOT8N80L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 800V 7.4A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 1.63 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock19,920	MOSFET (Metal Oxide)	800V	7.4A (Tc)	10V	4.5V @ 250µA	32nC @ 10V	1650pF @ 25V	±30V	-	245W (Tc)	1.63 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
BSR606NH6327XTSA1	Infineon Technologies	MOSFET N-CH 60V 2.3A SC59 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 657pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,128	MOSFET (Metal Oxide)	60V	2.3A (Ta)	4.5V, 10V	2.3V @ 15µA	5.6nC @ 5V	657pF @ 25V	±20V	-	500mW (Ta)	60 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SC-59	TO-236-3, SC-59, SOT-23-3
SPP21N50C3XKSA1	Infineon Technologies	MOSFET N-CH 500V 21A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock19,296	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	3.9V @ 1mA	95nC @ 10V	2400pF @ 25V	±20V	-	208W (Tc)	190 mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
SI4410BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 7.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock53,928	MOSFET (Metal Oxide)	30V	7.5A (Ta)	10V	3V @ 250µA	20nC @ 5V	-	±20V	-	1.4W (Ta)	13.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AO4484	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 13.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock9,636	MOSFET (Metal Oxide)	40V	10A (Ta)	4.5V, 10V	3V @ 250µA	37nC @ 10V	1950pF @ 20V	±20V	-	1.7W (Ta)	10 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
STK130N4LF7AG	STMicroelectronics	AUTOMOTIVE-GRADE N-CHANNEL 40 V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Stock354	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	2.5V @ 250µA	26 nC @ 10 V	1850 pF @ 25 V	±20V	-	105W (Tc)	3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
AO6085N03	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 11A/50A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-VDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta), 50A (Tc)	4.5V, 10V	2.5V @ 250µA	24 nC @ 10 V	1380 pF @ 15 V	±20V	-	1.9W (Ta), 31W (Tc)	8.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-VDFN Exposed Pad
SSFQ3905	Good-Ark Semiconductor	MOSFET, P-CH, SINGLE, -10A, -30V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock17,985	MOSFET (Metal Oxide)	30 V	10A	4.5V, 10V	2.5V @ 250µA	14.6 nC @ 4.5 V	1730 pF @ 15 V	±20V	-	2.5W	15.5mOhm @ 8A, 10V	-55°C ~ 150°C	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
MMFTP3160-AQ	Diotec Semiconductor	IC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.6A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	2.6A	4.5V, 10V	2V @ 250µA	8.3 nC @ 10 V	410 pF @ 10 V	±20V	-	1.4W	90mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
AOTL66518	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 150V 214A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 214A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLLA Package / Case: 8-PowerSFN	Package: -	Stock6,696	MOSFET (Metal Oxide)	150 V	214A (Tc)	10V	3.7V @ 250µA	115 nC @ 10 V	6460 pF @ 75 V	±20V	-	500W (Tc)	4.3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TOLLA	8-PowerSFN
SQ2389ES-T1_BE3	Vishay Siliconix	MOSFET P-CH 40V 4.1A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock305,100	MOSFET (Metal Oxide)	40 V	4.1A (Tc)	4.5V, 10V	2.5V @ 250µA	12 nC @ 10 V	420 pF @ 20 V	±20V	-	3W (Tc)	94mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
HAT2266HWS-E	Renesas Electronics Corporation	MOSFET N-CH 60V 30A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	30A (Ta)	4.5V, 10V	2.5V @ 1mA	25 nC @ 4.5 V	3600 pF @ 10 V	±20V	-	23W (Tc)	12mOhm @ 15A, 10V	150°C	Surface Mount	LFPAK	SC-100, SOT-669
DMPH4029LFGQ-7	Diodes Incorporated	MOSFET P-CH 40V 8A/22A PWRDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock7,050	MOSFET (Metal Oxide)	40 V	8A (Ta), 22A (Tc)	4.5V, 10V	3V @ 250µA	34 nC @ 10 V	1626 pF @ 20 V	±20V	-	1.2W (Ta)	29mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
PJP60R390E_T0_00001	Panjit International Inc.	600V N-CHANNEL SUPER JUNCTION MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 124W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock5,985	MOSFET (Metal Oxide)	600 V	1.5A (Ta), 11A (Tc)	10V	4V @ 250µA	32 nC @ 10 V	531 pF @ 25 V	±20V	-	2W (Ta), 124W (Tc)	390mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
2SJ651-TH	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSZ0902NSIATMA1	Infineon Technologies	MOSFET N-CH 30V 21A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	21A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	24 nC @ 10 V	1500 pF @ 15 V	±20V	-	2.5W (Ta), 48W (Tc)	2.8mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
SI2305B-TP	Micro Commercial Co	MOSFET P-CH 20V 4.2A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.4W Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock93,315	MOSFET (Metal Oxide)	20 V	4.2A (Tj)	1.8V, 4.5V	900mV @ 250µA	15 nC @ 4.5 V	740 pF @ 4 V	±8V	-	1.4W	60mOhm @ 2.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3