Page 1063 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SI1307DL-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 0.85A SOT323-3

Package: SC-70, SOT-323

Stock389,544
IXUC100N055
IXYS

MOSFET N-CH 55V 100A ISOPLUS-220

Package: ISOPLUS220?

Stock3,392
IRC640PBF
Vishay Siliconix

MOSFET N-CH 200V 18A TO-220-5

Package: TO-220-5

Stock116,400
STI8N65M5
STMicroelectronics

MOSFET N-CH 650V 7A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock11,556
IPP65R150CFDAAKSA1
Infineon Technologies

MOSFET N-CH 650V TO-220-3

Package: TO-220-3

Stock6,304
SPI08N50C3XKSA1
Infineon Technologies

MOSFET N-CH 560V 7.6A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,760
2SK3816-DL-1E
ON Semiconductor

MOSFET N-CH 60V 40A

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,128
SI8416DB-T2-E1
Vishay Siliconix

MOSFET N-CH 8V 16A MICRO

Package: 6-UFBGA

Stock3,504
NTLUS3A40PZTBG
ON Semiconductor

MOSFET P-CH 20V 4A 6UDFN

Package: 6-UDFN Exposed Pad

Stock4,704
STH130N8F7-2
STMicroelectronics

MOSFET N-CH 80V 110A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,440
SIS452DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 12V 35A 1212-8 PPAK

Package: PowerPAK? 1212-8

Stock6,256
STL62P3LLH6
STMicroelectronics

MOSFET P-CH 30V 62A 8POWERFLAT

Package: 8-PowerSMD, Flat Leads

Stock6,672
STL19N65M5
STMicroelectronics

MOSFET N-CH 650V 12.5A POWERFLAT

Package: 4-PowerFlat? HV

Stock2,192
FDMS86550
Fairchild/ON Semiconductor

MOSFET N-CH 60V 8MLP

Package: 8-PowerTDFN

Stock72,264
NDT451AN
Fairchild/ON Semiconductor

MOSFET N-CH 30V 7.2A SOT-223-4

Package: TO-261-4, TO-261AA

Stock919,116
IPD25CN10NGATMA1
Infineon Technologies

MOSFET N-CH 100V 35A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock65,028
SI4488DY-T1-E3
Vishay Siliconix

MOSFET N-CH 150V 3.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock551,928
SI7190DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 250V 18.4A PPAK SO-8

Package: PowerPAK? SO-8

Stock155,592
DMN2025UFDF-13
Diodes Incorporated

MOSFET N-CH 20V 6.5A 6UDFN

Package: -

Request a Quote
RD3L07BATTL1
Rohm Semiconductor

PCH -60V -70A POWER MOSFET - RD3

Package: -

Stock6,819

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SI1307DL-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 0.85A SOT323-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 290mW (Ta) Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock389,544	MOSFET (Metal Oxide)	12V	850mA (Ta)	1.8V, 4.5V	450mV @ 250µA (Min)	5nC @ 4.5V	-	±8V	-	290mW (Ta)	290 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3	SC-70, SOT-323
IXUC100N055	IXYS	MOSFET N-CH 55V 100A ISOPLUS-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock3,392	MOSFET (Metal Oxide)	55V	100A (Tc)	10V	4V @ 1mA	100nC @ 10V	-	±20V	-	150W (Tc)	7.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
IRC640PBF	Vishay Siliconix	MOSFET N-CH 200V 18A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock116,400	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	4V @ 250µA	70nC @ 10V	1300pF @ 25V	±20V	Current Sensing	125W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
STI8N65M5	STMicroelectronics	MOSFET N-CH 650V 7A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock11,556	MOSFET (Metal Oxide)	650V	7A (Tc)	10V	5V @ 250µA	15nC @ 10V	690pF @ 100V	±25V	-	70W (Tc)	600 mOhm @ 3.5A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IPP65R150CFDAAKSA1	Infineon Technologies	MOSFET N-CH 650V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195.3W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,304	MOSFET (Metal Oxide)	650V	22.4A (Tc)	10V	4.5V @ 900µA	86nC @ 10V	2340pF @ 100V	±20V	-	195.3W (Tc)	150 mOhm @ 9.3A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
SPI08N50C3XKSA1	Infineon Technologies	MOSFET N-CH 560V 7.6A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,760	MOSFET (Metal Oxide)	560V	7.6A (Tc)	10V	3.9V @ 350µA	32nC @ 10V	750pF @ 25V	±20V	-	83W (Tc)	600 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
2SK3816-DL-1E	ON Semiconductor	MOSFET N-CH 60V 40A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,128	MOSFET (Metal Oxide)	60V	40A (Ta)	4V, 10V	-	40nC @ 10V	1780pF @ 20V	±20V	-	1.65W (Ta), 50W (Tc)	26 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	TO-263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI8416DB-T2-E1	Vishay Siliconix	MOSFET N-CH 8V 16A MICRO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 4V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-Micro Foot? Package / Case: 6-UFBGA	Package: 6-UFBGA	Stock3,504	MOSFET (Metal Oxide)	8V	16A (Tc)	1.2V, 4.5V	800mV @ 250µA	26nC @ 4.5V	1470pF @ 4V	±5V	-	2.77W (Ta), 13W (Tc)	23 mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-Micro Foot?	6-UFBGA
NTLUS3A40PZTBG	ON Semiconductor	MOSFET P-CH 20V 4A 6UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock4,704	MOSFET (Metal Oxide)	20V	4A (Ta)	1.5V, 4.5V	1V @ 250µA	29nC @ 4.5V	2600pF @ 15V	±8V	-	700mW (Ta)	29 mOhm @ 6.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
STH130N8F7-2	STMicroelectronics	MOSFET N-CH 80V 110A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2Pak-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,440	MOSFET (Metal Oxide)	80V	110A (Tc)	10V	4.5V @ 250µA	60nC @ 10V	4500pF @ 25V	±20V	-	205W (Tc)	5 mOhm @ 55A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2Pak-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIS452DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 6V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock6,256	MOSFET (Metal Oxide)	12V	35A (Tc)	4.5V, 10V	2.2V @ 250µA	41nC @ 10V	1700pF @ 6V	±20V	-	3.8W (Ta), 52W (Tc)	3.25 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
STL62P3LLH6	STMicroelectronics	MOSFET P-CH 30V 62A 8POWERFLAT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 7A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock6,672	MOSFET (Metal Oxide)	30V	62A (Tc)	4.5V, 10V	1V @ 250µA (Min)	33nC @ 4.5V	3350pF @ 25V	±20V	-	100W (Tc)	10.5 mOhm @ 7A, 10V	175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
STL19N65M5	STMicroelectronics	MOSFET N-CH 650V 12.5A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock2,192	MOSFET (Metal Oxide)	650V	2.3A (Ta), 12.5A (Tc)	10V	5V @ 250µA	31nC @ 10V	1240pF @ 100V	±25V	-	2.8W (Ta), 90W (Tc)	240 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
FDMS86550	Fairchild/ON Semiconductor	MOSFET N-CH 60V 8MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11530pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 1.65 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock72,264	MOSFET (Metal Oxide)	60V	32A (Ta), 155A (Tc)	8V, 10V	4.5V @ 250µA	154nC @ 10V	11530pF @ 30V	±20V	-	2.7W (Ta), 156W (Tc)	1.65 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
NDT451AN	Fairchild/ON Semiconductor	MOSFET N-CH 30V 7.2A SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.2A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock919,116	MOSFET (Metal Oxide)	30V	7.2A (Ta)	4.5V, 10V	3V @ 250µA	30nC @ 10V	720pF @ 15V	±20V	-	3W (Ta)	35 mOhm @ 7.2A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
IPD25CN10NGATMA1	Infineon Technologies	MOSFET N-CH 100V 35A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 39µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock65,028	MOSFET (Metal Oxide)	100V	35A (Tc)	10V	4V @ 39µA	31nC @ 10V	2070pF @ 50V	±20V	-	71W (Tc)	25 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SI4488DY-T1-E3	Vishay Siliconix	MOSFET N-CH 150V 3.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock551,928	MOSFET (Metal Oxide)	150V	3.5A (Ta)	10V	2V @ 250µA (Min)	36nC @ 10V	-	±20V	-	1.56W (Ta)	50 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI7190DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 250V 18.4A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2214pF @ 125V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 118 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock155,592	MOSFET (Metal Oxide)	250V	18.4A (Tc)	6V, 10V	4V @ 250µA	72nC @ 10V	2214pF @ 125V	±20V	-	5.4W (Ta), 96W (Tc)	118 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
DMN2025UFDF-13	Diodes Incorporated	MOSFET N-CH 20V 6.5A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 486 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6.5A (Ta)	1.8V, 4.5V	1V @ 250µA	12.3 nC @ 10 V	486 pF @ 10 V	±10V	-	700mW (Ta)	25mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
RD3L07BATTL1	Rohm Semiconductor	PCH -60V -70A POWER MOSFET - RD3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 101W (Tc) Rds On (Max) @ Id, Vgs: 12.7mOhm @ 70A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,819	MOSFET (Metal Oxide)	60 V	70A (Tc)	4.5V, 10V	2.5V @ 1mA	105 nC @ 10 V	6700 pF @ 30 V	±20V	-	101W (Tc)	12.7mOhm @ 70A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
CMPDM303NH-BK	Central Semiconductor Corp	MOSFET N-CH 30V 3.6A SOT23F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V Vgs (Max): 12V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	3.6A (Ta)	2.5V, 4.5V	1.2V @ 250µA	13 nC @ 4.5 V	590 pF @ 10 V	12V	-	350mW (Ta)	40mOhm @ 1.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
IXKH47N60CC3	IXYS	MOSFET N-CH 600V 47A TO247AD FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DI017N06PQ-AQ	Diotec Semiconductor	MOSFET POWERQFN 5X6 N 60V FET Type: N-Channel Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 17A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 21W Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PowerQFN 5x6 Package / Case: -	Package: -	Request a Quote	-	-	17A	-	-	-	-	-	-	21W	-	-	Surface Mount	PowerQFN 5x6	-
DMT3006LFVQ-13	Diodes Incorporated	MOSFET N-CH 30V 60A POWERDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 (Type UX) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	60A (Tc)	4.5V, 10V	3V @ 250µA	16.7 nC @ 10 V	1155 pF @ 15 V	±20V	-	1W (Ta)	7mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8 (Type UX)	8-PowerVDFN
XP10N3R5XT	YAGEO XSEMI	FET N-CH 100V 28.5A 100A PMPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 28.5A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 134.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6480 pF @ 80 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PMPAK® 5 x 6 Package / Case: 8-PowerLDFN	Package: -	Stock3,000	MOSFET (Metal Oxide)	100 V	28.5A (Ta), 100A (Tc)	10V	4V @ 250µA	134.4 nC @ 10 V	6480 pF @ 80 V	±20V	-	5W (Ta), 125W (Tc)	3.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PMPAK® 5 x 6	8-PowerLDFN
IRLU3636-701TRP	Infineon Technologies	MOSFET N-CH 60V 50A IPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJQ5451E-AU_R2_006A1	Panjit International Inc.	40V P-CHANNEL ENHANCEMENT MODE M FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock9,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQJ174EP-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 60 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 293A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6111 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock17,829	MOSFET (Metal Oxide)	60 V	293A (Tc)	10V	3.5V @ 250µA	81 nC @ 10 V	6111 pF @ 25 V	±20V	-	500W (Tc)	2.9mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8