Page 110 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPU78CN10N G
Infineon Technologies

MOSFET N-CH 100V 13A TO251-3

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,880
IPB13N03LB G
Infineon Technologies

MOSFET N-CH 30V 30A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,464
IRF1010NSTRL
Infineon Technologies

MOSFET N-CH 55V 85A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,792
IRF7353D1TR
Infineon Technologies

MOSFET N-CH 30V 6.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock750,144
SI5853DC-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 2.7A 1206-8

Package: 8-SMD, Flat Lead

Stock5,373,480
RFD14N05SM
Fairchild/ON Semiconductor

MOSFET N-CH 50V 14A TO-252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock92,352
STB60NE06L-16T4
STMicroelectronics

MOSFET N-CH 60V 60A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock96,000
STW80NF06
STMicroelectronics

MOSFET N-CH 60V 80A TO-247

Package: TO-247-3

Stock3,312
FQI8N60CTU
Fairchild/ON Semiconductor

MOSFET N-CH 600V 7.5A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock21,420
NTD24N06T4G
ON Semiconductor

MOSFET N-CH 60V 24A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock452,088
STH360N4F6-2
STMicroelectronics

MOSFET N-CH 40V 180A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock4,208
STD10NM60ND
STMicroelectronics

MOSFET N-CH 600V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock481,200
STD11N60M2-EP
STMicroelectronics

N-CHANNEL 600 V, 0.550 OHM TYP.,

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,552
IPS70R1K4P7SAKMA1
Infineon Technologies

MOSFET N-CH 700V 8.2A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock17,724
SSM3J304T(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2.3A TSM

Package: TO-236-3, SC-59, SOT-23-3

Stock27,306
ZXMP3A13FTA
Diodes Incorporated

MOSFET P-CH 30V 1.4A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock3,241,008
2N7000TA
Fairchild/ON Semiconductor

MOSFET N-CH 60V 0.2A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock192,744
RJK03A4DPA-00-J53
Renesas Electronics Corporation

POWER TRANSISTOR, MOSFET

Package: -

Request a Quote
R6047ENZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 47A TO247

Package: -

Stock9
E4M0013120K
Wolfspeed, Inc.

13M, 1200V, SIC FET TO-247, AUTO

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPU78CN10N G	Infineon Technologies	MOSFET N-CH 100V 13A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 716pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,880	MOSFET (Metal Oxide)	100V	13A (Tc)	10V	4V @ 12µA	11nC @ 10V	716pF @ 50V	±20V	-	31W (Tc)	78 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IPB13N03LB G	Infineon Technologies	MOSFET N-CH 30V 30A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1355pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,464	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2V @ 20µA	11nC @ 5V	1355pF @ 15V	±20V	-	52W (Tc)	12.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF1010NSTRL	Infineon Technologies	MOSFET N-CH 55V 85A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,792	MOSFET (Metal Oxide)	55V	85A (Tc)	10V	4V @ 250µA	120nC @ 10V	3210pF @ 25V	±20V	-	180W (Tc)	11 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7353D1TR	Infineon Technologies	MOSFET N-CH 30V 6.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock750,144	MOSFET (Metal Oxide)	30V	6.5A (Ta)	4.5V, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	±20V	Schottky Diode (Isolated)	2W (Ta)	32 mOhm @ 5.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI5853DC-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 2.7A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock5,373,480	MOSFET (Metal Oxide)	20V	2.7A (Ta)	1.8V, 4.5V	1V @ 250µA	7.7nC @ 4.5V	-	±8V	Schottky Diode (Isolated)	1.1W (Ta)	110 mOhm @ 2.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
RFD14N05SM	Fairchild/ON Semiconductor	MOSFET N-CH 50V 14A TO-252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock92,352	MOSFET (Metal Oxide)	50V	14A (Tc)	10V	4V @ 250µA	40nC @ 20V	570pF @ 25V	±20V	-	48W (Tc)	100 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
STB60NE06L-16T4	STMicroelectronics	MOSFET N-CH 60V 60A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock96,000	MOSFET (Metal Oxide)	60V	60A (Tc)	5V, 10V	2.5V @ 250µA	70nC @ 4.5V	4150pF @ 25V	±15V	-	150W (Tc)	14 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW80NF06	STMicroelectronics	MOSFET N-CH 60V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,312	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 250µA	150nC @ 10V	3850pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 40A, 10V	175°C (TJ)	Through Hole	TO-247-3	TO-247-3
FQI8N60CTU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock21,420	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	4V @ 250µA	36nC @ 10V	1255pF @ 25V	±30V	-	3.13W (Ta), 147W (Tc)	1.2 Ohm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
NTD24N06T4G	ON Semiconductor	MOSFET N-CH 60V 24A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Rds On (Max) @ Id, Vgs: 42 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock452,088	MOSFET (Metal Oxide)	60V	24A (Ta)	10V	4V @ 250µA	48nC @ 10V	1200pF @ 25V	±20V	-	1.36W (Ta), 62.5W (Tj)	42 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STH360N4F6-2	STMicroelectronics	MOSFET N-CH 40V 180A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17930pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock4,208	MOSFET (Metal Oxide)	40V	180A (Tc)	10V	4.5V @ 250µA	340nC @ 10V	17930pF @ 25V	±20V	-	300W (Tc)	1.25 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-3, D2Pak (2 Leads + Tab) Variant
STD10NM60ND	STMicroelectronics	MOSFET N-CH 600V 8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 577pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock481,200	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	5V @ 250µA	20nC @ 10V	577pF @ 50V	±25V	-	70W (Tc)	600 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STD11N60M2-EP	STMicroelectronics	N-CHANNEL 600 V, 0.550 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 595 mOhm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,552	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	4V @ 250µA	12.4nC @ 10V	390pF @ 100V	±25V	-	85W (Tc)	595 mOhm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IPS70R1K4P7SAKMA1	Infineon Technologies	MOSFET N-CH 700V 8.2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 158pF @ 400V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 22.7W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 700mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock17,724	MOSFET (Metal Oxide)	700V	4A (Tc)	10V	3.5V @ 40µA	4.7nC @ 10V	158pF @ 400V	±16V	-	22.7W (Tc)	1.4 Ohm @ 700mA, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251	TO-251-3 Stub Leads, IPak
SSM3J304T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 2.3A TSM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 127 mOhm @ 1A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock27,306	MOSFET (Metal Oxide)	20V	2.3A (Ta)	1.8V, 4V	-	6.1nC @ 4V	335pF @ 10V	±8V	-	700mW (Ta)	127 mOhm @ 1A, 4V	150°C (TJ)	Surface Mount	TSM	TO-236-3, SC-59, SOT-23-3
ZXMP3A13FTA	Diodes Incorporated	MOSFET P-CH 30V 1.4A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 206pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 210 mOhm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,241,008	MOSFET (Metal Oxide)	30V	1.4A (Ta)	4.5V, 10V	1V @ 250µA	6.4nC @ 10V	206pF @ 15V	±20V	-	625mW (Ta)	210 mOhm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
2N7000TA	Fairchild/ON Semiconductor	MOSFET N-CH 60V 0.2A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock192,744	MOSFET (Metal Oxide)	60V	200mA (Tc)	4.5V, 10V	3V @ 1mA	-	50pF @ 25V	±20V	-	400mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
RJK03A4DPA-00-J53	Renesas Electronics Corporation	POWER TRANSISTOR, MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6047ENZ4C13	Rohm Semiconductor	MOSFET N-CH 600V 47A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock9	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	4V @ 1mA	145 nC @ 10 V	3850 pF @ 25 V	±20V	-	481W (Tc)	72mOhm @ 25.8A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
E4M0013120K	Wolfspeed, Inc.	13M, 1200V, SIC FET TO-247, AUTO FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 153A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.8V @ 23.18mA Gate Charge (Qg) (Max) @ Vgs: 293 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 1000 V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 517W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 84.29A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	153A (Tc)	15V	3.8V @ 23.18mA	293 nC @ 15 V	7407 pF @ 1000 V	+19V, -8V	-	517W (Tc)	17mOhm @ 84.29A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
NVMYS4D5N04CTWG	onsemi	T6 40V SL LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) Package / Case: SOT-1023, 4-LFPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	20A (Ta)	10V	3.5V @ 50µA	18 nC @ 10 V	1150 pF @ 25 V	20V	-	3.6W (Ta), 55W (Tc)	4.5mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
IMBG120R116M2HXTMA1	Infineon Technologies	SIC DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISZ0703NLSATMA1	Infineon Technologies	MOSFET N-CH 60V 13A/56A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-25 Package / Case: 8-PowerTDFN	Package: -	Stock54,984	MOSFET (Metal Oxide)	60 V	13A (Ta), 56A (Tc)	4.5V, 10V	2.3V @ 15µA	23 nC @ 10 V	1400 pF @ 30 V	±20V	-	2.5W (Ta), 44W (Tc)	7.3mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8-25	8-PowerTDFN
DMTH4M95SPSQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPWS65R050CFD7AXKSA1	Infineon Technologies	MOSFET N-CH 650V 45A TO247-3-41 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	Package: -	Stock243	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	4.5V @ 1.24mA	102 nC @ 10 V	4975 pF @ 400 V	±20V	-	227W (Tc)	50mOhm @ 24.8A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
STWA50N65DM2AG	STMicroelectronics	MOSFET N-CH 650V 38A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	38A (Tc)	10V	5V @ 250µA	69 nC @ 10 V	3200 pF @ 100 V	±25V	-	300W (Tc)	87mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
DMP3021SFVWQ-7	Diodes Incorporated	MOSFET P-CH 30V 9.8A PWRDI3333-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock24,000	MOSFET (Metal Oxide)	30 V	11A (Ta), 42A (Tc)	5V, 10V	2.5V @ 250µA	34 nC @ 10 V	1799 pF @ 15 V	±25V	-	1W (Ta)	15mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
DMN3066LQ-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT23 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 810mW (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	3.6A (Ta)	2.5V, 4.5V	1.5V @ 250µA	4.1 nC @ 4.5 V	353 pF @ 10 V	±12V	-	810mW (Ta)	67mOhm @ 2.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3