Page 113 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF1902TRPBF
Infineon Technologies

MOSFET N-CH 20V 4.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock610,092
BSP296L6327HTSA1
Infineon Technologies

MOSFET N-CH 100V 1.1A SOT-223

Package: TO-261-4, TO-261AA

Stock5,472
JANTX2N6758
Microsemi Corporation

MOSFET N-CH TO-204AA TO-3

Package: TO-204AA, TO-3

Stock10,104
SUD50N03-06P-E3
Vishay Siliconix

MOSFET N-CH 30V 84A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock123,672
FQA24N50F_F109
Fairchild/ON Semiconductor

MOSFET N-CH 500V 24A TO-3PN

Package: TO-3P-3, SC-65-3

Stock7,856
TPCA8023-H(TE12LQM
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 20A SOP-8 ADV

Package: 8-PowerVDFN

Stock108,000
FDFC2P100
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,736
FDFC3N108
Fairchild/ON Semiconductor

MOSFET N-CH 20V 3A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,352
IRFP360
Vishay Siliconix

MOSFET N-CH 400V 23A TO-247AC

Package: TO-247-3

Stock17,316
STU2NK100Z
STMicroelectronics

MOSFET N-CH 1000V 1.85A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,504
IPB100N04S204ATMA4
Infineon Technologies

MOSFET N-CH 40V 100A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock21,756
IRF6662TRPBF
Infineon Technologies

MOSFET N-CH 100V 8.3A DIRECTFET

Package: DirectFET? Isometric MZ

Stock14,340
STL33N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.115 OHM TYP.,

Package: 8-PowerVDFN

Stock6,272
NTMFS5C404NT1G
ON Semiconductor

T6 40V MOSFET

Package: 8-PowerTDFN, 5 Leads

Stock2,816
IRLML9301TRPBF
Infineon Technologies

MOSFET P-CH 30V 3.6A SOT-23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock3,637,308
BSS123W
Fairchild/ON Semiconductor

MOSFET N-CH 100V 0.17A SOT-323

Package: SC-70, SOT-323

Stock174,414
STD30PF03LT4
STMicroelectronics

MOSFET P-CH 30V 24A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock787,260
RJK03R1DPA-00-J5A
Renesas Electronics Corporation

N-CHANNEL MOSFET

Package: -

Request a Quote
PMV13XNEAR
Nexperia USA Inc.

PMV13XNEA - 20 V, N-CHANNEL TREN

Package: -

Stock9,663
MCAC68N03Y-TP
Micro Commercial Co

N-CHANNEL MOSFET, DFN5060

Package: -

Stock35,178

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF1902TRPBF	Infineon Technologies	MOSFET N-CH 20V 4.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock610,092	MOSFET (Metal Oxide)	20V	4.2A (Ta)	2.7V, 4.5V	700mV @ 250µA	7.5nC @ 4.5V	310pF @ 15V	±12V	-	2.5W (Ta)	85 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSP296L6327HTSA1	Infineon Technologies	MOSFET N-CH 100V 1.1A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.79W (Ta) Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,472	MOSFET (Metal Oxide)	100V	1.1A (Ta)	4.5V, 10V	1.8V @ 400µA	17.2nC @ 10V	364pF @ 25V	±20V	-	1.79W (Ta)	700 mOhm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
JANTX2N6758	Microsemi Corporation	MOSFET N-CH TO-204AA TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 490 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	Package: TO-204AA, TO-3	Stock10,104	MOSFET (Metal Oxide)	200V	9A (Tc)	10V	4V @ 250µA	39nC @ 10V	-	±20V	-	4W (Ta), 75W (Tc)	490 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (TO-3)	TO-204AA, TO-3
SUD50N03-06P-E3	Vishay Siliconix	MOSFET N-CH 30V 84A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock123,672	MOSFET (Metal Oxide)	30V	84A (Tc)	4.5V, 10V	3V @ 250µA	30nC @ 4.5V	3100pF @ 25V	±20V	-	8.3W (Ta), 88W (Tc)	6.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQA24N50F_F109	Fairchild/ON Semiconductor	MOSFET N-CH 500V 24A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,856	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	5V @ 250µA	120nC @ 10V	4500pF @ 25V	±30V	-	290W (Tc)	200 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
TPCA8023-H(TE12LQM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 20A SOP-8 ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock108,000	MOSFET (Metal Oxide)	30V	21A (Ta)	4.5V, 10V	2.5V @ 1mA	21nC @ 10V	2150pF @ 10V	±20V	-	1.6W (Ta), 30W (Tc)	12.9 mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
FDFC2P100	Fairchild/ON Semiconductor	MOSFET P-CH 20V 3A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SSOT Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,736	MOSFET (Metal Oxide)	20V	3A (Ta)	2.5V, 4.5V	1.5V @ 250µA	4.7nC @ 10V	445pF @ 10V	±12V	Schottky Diode (Isolated)	1.5W (Ta)	150 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT	SOT-23-6 Thin, TSOT-23-6
FDFC3N108	Fairchild/ON Semiconductor	MOSFET N-CH 20V 3A SSOT-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SSOT Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,352	MOSFET (Metal Oxide)	20V	3A (Ta)	2.5V, 4.5V	1.5V @ 250µA	4.9nC @ 4.5V	355pF @ 10V	±12V	Schottky Diode (Isolated)	-	70 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT	SOT-23-6 Thin, TSOT-23-6
IRFP360	Vishay Siliconix	MOSFET N-CH 400V 23A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock17,316	MOSFET (Metal Oxide)	400V	23A (Tc)	10V	4V @ 250µA	210nC @ 10V	4500pF @ 25V	±20V	-	280W (Tc)	200 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STU2NK100Z	STMicroelectronics	MOSFET N-CH 1000V 1.85A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 499pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,504	MOSFET (Metal Oxide)	1000V	1.85A (Tc)	10V	4.5V @ 50µA	16nC @ 10V	499pF @ 25V	±30V	-	70W (Tc)	8.5 Ohm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IPB100N04S204ATMA4	Infineon Technologies	MOSFET N-CH 40V 100A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock21,756	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 250µA	172nC @ 10V	5300pF @ 25V	±20V	-	300W (Tc)	3.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF6662TRPBF	Infineon Technologies	MOSFET N-CH 100V 8.3A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.2A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MZ Package / Case: DirectFET? Isometric MZ	Package: DirectFET? Isometric MZ	Stock14,340	MOSFET (Metal Oxide)	100V	8.3A (Ta), 47A (Tc)	10V	4.9V @ 100µA	31nC @ 10V	1360pF @ 25V	±20V	-	2.8W (Ta), 89W (Tc)	22 mOhm @ 8.2A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MZ	DirectFET? Isometric MZ
STL33N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.115 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,272	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	5V @ 250µA	43nC @ 10V	1870pF @ 100V	±25V	-	150W (Tc)	140 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	8-PowerVDFN
NTMFS5C404NT1G	ON Semiconductor	T6 40V MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,816	MOSFET (Metal Oxide)	40V	53A (Ta), 378A (Tc)	10V	4V @ 250µA	22nC @ 10V	8400pF @ 25V	±20V	-	3.9W (Ta), 200W (Tc)	0.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IRLML9301TRPBF	Infineon Technologies	MOSFET P-CH 30V 3.6A SOT-23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 388pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3?/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,637,308	MOSFET (Metal Oxide)	30V	3.6A (Ta)	4.5V, 10V	2.4V @ 10µA	4.8nC @ 4.5V	388pF @ 25V	±20V	-	1.3W (Ta)	64 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro3?/SOT-23	TO-236-3, SC-59, SOT-23-3
BSS123W	Fairchild/ON Semiconductor	MOSFET N-CH 100V 0.17A SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 71pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock174,414	MOSFET (Metal Oxide)	100V	170mA (Ta)	4.5V, 10V	2V @ 1mA	-	71pF @ 25V	±20V	-	200mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
STD30PF03LT4	STMicroelectronics	MOSFET P-CH 30V 24A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 12A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock787,260	MOSFET (Metal Oxide)	30V	24A (Tc)	5V, 10V	1V @ 250µA	28nC @ 5V	1670pF @ 25V	±16V	-	70W (Tc)	28 mOhm @ 12A, 10V	175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
RJK03R1DPA-00-J5A	Renesas Electronics Corporation	N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMV13XNEAR	Nexperia USA Inc.	PMV13XNEA - 20 V, N-CHANNEL TREN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 610mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 7.3A, 8V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock9,663	MOSFET (Metal Oxide)	20 V	7.3A (Ta)	2.5V, 8V	1.3V @ 250µA	15 nC @ 4.5 V	931 pF @ 10 V	±12V	-	610mW (Ta), 8.3W (Tc)	15mOhm @ 7.3A, 8V	-55°C ~ 175°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
MCAC68N03Y-TP	Micro Commercial Co	N-CHANNEL MOSFET, DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 68A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 732 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock35,178	MOSFET (Metal Oxide)	30 V	68A	-	2V @ 250µA	14 nC @ 10 V	732 pF @ 15 V	±20V	-	35W	7.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
GSFP0876	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE 80V 75A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 98W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PPAK (5.1x5.71) Package / Case: 8-PowerTDFN	Package: -	Stock8,970	MOSFET (Metal Oxide)	80 V	75A (Tc)	4.5V, 10V	2.5V @ 250µA	45 nC @ 10 V	2580 pF @ 40 V	±20V	-	98W (Tc)	7mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PPAK (5.1x5.71)	8-PowerTDFN
CMS12P03Q8-HF	Comchip Technology	MOSFET P-CH 30V 12A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2419 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	12A (Tc)	4.5V, 10V	2.2V @ 250µA	44.4 nC @ 10 V	2419 pF @ 15 V	±20V	-	3W (Tc)	15mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
PJS6461-AU_S1_000A1	Panjit International Inc.	60V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: -	Stock112,392	MOSFET (Metal Oxide)	60 V	3.2A (Ta)	4.5V, 10V	2.5V @ 250µA	10 nC @ 10 V	785 pF @ 30 V	±20V	-	2W (Ta)	110mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
IAUCN04S7N030ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	Package: -	Stock3,000	MOSFET (Metal Oxide)	40 V	100A	10V	-	-	-	-	-	-	-	-55°C ~ 100°C	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
2SJ635-TL-E	onsemi	2SJ635 - P-CHANNEL SILICON MOSFE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	12A (Ta)	4V, 10V	2.6V @ 1mA	45 nC @ 10 V	2200 pF @ 20 V	±20V	-	1W (Ta), 30W (Tc)	60mOhm @ 6A, 10V	150°C	Through Hole	TP	TO-251-3 Short Leads, IPak, TO-251AA
IPB45P03P4L11ATMA2	Infineon Technologies	MOSFET_(20V 40V) PG-TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	45A (Tc)	4.5V, 10V	2V @ 85µA	55 nC @ 10 V	3770 pF @ 25 V	+5V, -16V	-	58W (Tc)	10.8mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MSC360SMA120S	Microchip Technology	MOSFET SIC 1200 V 360 MOHM TO-26 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock615	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHFR024-GE3	Vishay Siliconix	MOSFET N-CHANNEL 60V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock5,661	MOSFET (Metal Oxide)	60 V	14A (Tc)	10V	4V @ 250µA	25 nC @ 10 V	640 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	100mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63