Page 1127 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3711ZPBF
Infineon Technologies

MOSFET N-CH 20V 92A TO-220AB

Package: TO-220-3

Stock391,416
IRF7476
Infineon Technologies

MOSFET N-CH 12V 15A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,736
FDI040N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,656
PHD37N06LT,118
NXP

MOSFET N-CH 55V 37A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,496
FQAF11N90
Fairchild/ON Semiconductor

MOSFET N-CH 900V 7.2A TO-3PF

Package: SC-94

Stock9,960
FDB2570
Fairchild/ON Semiconductor

MOSFET N-CH 150V 22A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock393,384
IRFIB8N50K
Vishay Siliconix

MOSFET N-CH 500V 6.7A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock17,400
IRLZ24S
Vishay Siliconix

MOSFET N-CH 60V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock69,228
IRF740LC
Vishay Siliconix

MOSFET N-CH 400V 10A TO-220AB

Package: TO-220-3

Stock2,832
IPB120N10S403ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,912
IPS60R1K5CEAKMA1
Infineon Technologies

CONSUMER

Package: -

Stock2,224
IXTH10N100D2
IXYS

MOSFET N-CH 1000V 10A TO-247

Package: TO-247-3

Stock4,352
AOI1N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 1.3A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock83,880
APT12067B2FLLG
Microsemi Corporation

MOSFET N-CH 1200V 18A T-MAX

Package: TO-247-3 Variant

Stock4,304
NTD4804NT4G
ON Semiconductor

MOSFET N-CH 30V 14.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,006,776
FDG315N
Fairchild/ON Semiconductor

MOSFET N-CH 30V 2A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock601,764
IPW60R075CP
Infineon Technologies

MOSFET N-CH 650V 39A TO-247

Package: TO-247-3

Stock87,840
TPH3205WSB
Transphorm

GAN FET 650V 36A TO247

Package: TO-247-3

Stock12,948
AONS62814T
Alpha & Omega Semiconductor Inc.

N

Package: -

Request a Quote
BSS215PH6327XTSA1-ML
MOSLEADER

P -20V SOT-23

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3711ZPBF	Infineon Technologies	MOSFET N-CH 20V 92A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock391,416	MOSFET (Metal Oxide)	20V	92A (Tc)	4.5V, 10V	2.45V @ 250µA	24nC @ 4.5V	2150pF @ 10V	±20V	-	79W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF7476	Infineon Technologies	MOSFET N-CH 12V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 6V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,736	MOSFET (Metal Oxide)	12V	15A (Ta)	2.8V, 4.5V	1.9V @ 250µA	40nC @ 4.5V	2550pF @ 6V	±12V	-	2.5W (Ta)	8 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDI040N06	Fairchild/ON Semiconductor	MOSFET N-CH 60V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8235pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,656	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4.5V @ 250µA	133nC @ 10V	8235pF @ 25V	±20V	-	231W (Tc)	4 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2Pak, TO-262AA
PHD37N06LT,118	NXP	MOSFET N-CH 55V 37A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±13V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,496	MOSFET (Metal Oxide)	55V	37A (Tc)	5V, 10V	2V @ 1mA	22.5nC @ 5V	1400pF @ 25V	±13V	-	100W (Tc)	32 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FQAF11N90	Fairchild/ON Semiconductor	MOSFET N-CH 900V 7.2A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 960 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock9,960	MOSFET (Metal Oxide)	900V	7.2A (Tc)	10V	5V @ 250µA	94nC @ 10V	3500pF @ 25V	±30V	-	120W (Tc)	960 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
FDB2570	Fairchild/ON Semiconductor	MOSFET N-CH 150V 22A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1911pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 11A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock393,384	MOSFET (Metal Oxide)	150V	22A (Ta)	6V, 10V	4V @ 250µA	56nC @ 10V	1911pF @ 75V	±20V	-	93W (Tc)	80 mOhm @ 11A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFIB8N50K	Vishay Siliconix	MOSFET N-CH 500V 6.7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock17,400	MOSFET (Metal Oxide)	500V	6.7A (Tc)	10V	5V @ 250µA	89nC @ 10V	2160pF @ 25V	±30V	-	45W (Tc)	350 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRLZ24S	Vishay Siliconix	MOSFET N-CH 60V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock69,228	MOSFET (Metal Oxide)	60V	17A (Tc)	4V, 5V	2V @ 250µA	18nC @ 5V	870pF @ 25V	±10V	-	3.7W (Ta), 60W (Tc)	100 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF740LC	Vishay Siliconix	MOSFET N-CH 400V 10A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,832	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	±30V	-	125W (Tc)	550 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB120N10S403ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,912	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	3.5V @ 180µA	140nC @ 10V	10120pF @ 25V	±20V	-	250W (Tc)	3.5 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPS60R1K5CEAKMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,224	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTH10N100D2	IXYS	MOSFET N-CH 1000V 10A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 200nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 695W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock4,352	MOSFET (Metal Oxide)	1000V	10A (Tc)	10V	-	200nC @ 5V	5320pF @ 25V	±20V	Depletion Mode	695W (Tc)	1.5 Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
AOI1N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 1.3A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 650mA, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock83,880	MOSFET (Metal Oxide)	600V	1.3A (Tc)	10V	4.5V @ 250µA	8nC @ 10V	160pF @ 25V	±30V	-	45W (Tc)	9 Ohm @ 650mA, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
APT12067B2FLLG	Microsemi Corporation	MOSFET N-CH 1200V 18A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 565W (Tc) Rds On (Max) @ Id, Vgs: 670 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX? [B2] Package / Case: TO-247-3 Variant	Package: TO-247-3 Variant	Stock4,304	MOSFET (Metal Oxide)	1200V	18A (Tc)	10V	5V @ 2.5mA	150nC @ 10V	4420pF @ 25V	±30V	-	565W (Tc)	670 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX? [B2]	TO-247-3 Variant
NTD4804NT4G	ON Semiconductor	MOSFET N-CH 30V 14.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.43W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,006,776	MOSFET (Metal Oxide)	30V	14.5A (Ta), 124A (Tc)	4.5V, 11.5V	2.5V @ 250µA	40nC @ 4.5V	4490pF @ 12V	±20V	-	1.43W (Ta), 107W (Tc)	4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FDG315N	Fairchild/ON Semiconductor	MOSFET N-CH 30V 2A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock601,764	MOSFET (Metal Oxide)	30V	2A (Ta)	4.5V, 10V	3V @ 250µA	4nC @ 5V	220pF @ 15V	±20V	-	750mW (Ta)	120 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
IPW60R075CP	Infineon Technologies	MOSFET N-CH 650V 39A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.7mA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock87,840	MOSFET (Metal Oxide)	650V	39A (Tc)	10V	3.5V @ 1.7mA	116nC @ 10V	4000pF @ 100V	±20V	-	313W (Tc)	75 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
TPH3205WSB	Transphorm	GAN FET 650V 36A TO247 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 400V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 22A, 8V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock12,948	GaNFET (Gallium Nitride)	650V	36A (Tc)	8V	2.6V @ 700µA	42nC @ 8V	2200pF @ 400V	±18V	-	125W (Tc)	60 mOhm @ 22A, 8V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
AONS62814T	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.8W (Ta), 258W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	40A (Ta), 100A (Tc)	6V, 10V	3.2V @ 250µA	100 nC @ 10 V	4940 pF @ 40 V	±20V	-	8.8W (Ta), 258W (Tc)	2.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
BSS215PH6327XTSA1-ML	MOSLEADER	P -20V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6024VNX3C16	Rohm Semiconductor	600V 24A TO-220AB, PRESTOMOS WIT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 6.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 153mOhm @ 6A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock3,198	MOSFET (Metal Oxide)	600 V	24A (Tc)	10V, 15V	6.5V @ 700µA	38 nC @ 10 V	1800 pF @ 100 V	±30V	-	245W (Tc)	153mOhm @ 6A, 15V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NP60N06VDK-E1-AY	Renesas Electronics Corporation	P-TRS2 AUTOMOTIVE MOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 30A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3ZP) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock29,592	MOSFET (Metal Oxide)	60 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	56 nC @ 10 V	3600 pF @ 25 V	±20V	-	1.2W (Ta), 105W (Tc)	7.9mOhm @ 30A, 10V	175°C	Surface Mount	TO-252 (MP-3ZP)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFP26N30X3	IXYS	MOSFET N-CH 300V 26A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock1,563	MOSFET (Metal Oxide)	300 V	26A (Tc)	10V	4.5V @ 500µA	22 nC @ 10 V	1465 pF @ 25 V	±20V	-	170W (Tc)	66mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
SQJ412EP-T2_GE3	Vishay Siliconix	MOSFET N-CH 40V 32A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	32A (Tc)	4.5V, 10V	2.5V @ 250µA	120 nC @ 10 V	5950 pF @ 20 V	±20V	-	83W (Tc)	4.1mOhm @ 10.3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
PJP4NA60_T0_00001	Panjit International Inc.	600V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	4A (Ta)	10V	4V @ 250µA	11.1 nC @ 10 V	450 pF @ 25 V	±30V	-	100W (Tc)	2.4Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FCH150N65F-F155	onsemi	MOSFET N-CH 650V 24A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.4mA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock216	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	5V @ 2.4mA	94 nC @ 10 V	3737 pF @ 100 V	±20V	-	298W (Tc)	150mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
COM-10213	SparkFun Electronics	N-CHANNEL MOSFET 60V 30A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	32A (Tc)	5V, 10V	2.5V @ 250µA	20 nC @ 5 V	1040 pF @ 25 V	±20V	-	79W (Tc)	35mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
DMN2451UFB4Q-7R	Diodes Incorporated	MOSFET BVDSS: 8V~24V X2-DFN1006- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN1006-3 Package / Case: 3-XFDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	1.3A (Ta)	1.8V, 4.5V	1V @ 250µA	6.4 nC @ 10 V	32 pF @ 16 V	±12V	-	660mW (Ta)	400mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN1006-3	3-XFDFN