Page 1130 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFR5505
Infineon Technologies

MOSFET P-CH 55V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,704
SIHW23N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 23A TO-247AD

Package: TO-247-3

Stock7,984
SI7601DN-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 16A 1212-8

Package: PowerPAK? 1212-8

Stock6,000
NTD20N06-1G
ON Semiconductor

MOSFET N-CH 60V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,648
IRFI624G
Vishay Siliconix

MOSFET N-CH 250V 3.4A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock11,988
BUK754R3-75C,127
NXP

MOSFET N-CH 75V 100A TO220AB-3

Package: TO-220-3

Stock3,296
AUIRFSA8409-7TRL
Infineon Technologies

MOSFET NCH 40V 523A D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock5,760
IRLU2905PBF
Infineon Technologies

MOSFET N-CH 55V 42A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock125,964
BSC0500NSIATMA1
Infineon Technologies

MOSFET N-CH 30V 35A TDSON-8

Package: 8-PowerTDFN

Stock3,360
IPI45N06S409AKSA2
Infineon Technologies

MOSFET N-CH 60V 45A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,536
IXFR80N15Q
IXYS

MOSFET N-CH 150V 75A ISOPLUS247

Package: ISOPLUS247?

Stock103,464
IRFI620GPBF
Vishay Siliconix

MOSFET N-CH 200V 4.1A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock14,256
IRLR2905PBF
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock390,000
IRF9388TRPBF
Infineon Technologies

MOSFET P-CH 30V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock496,944
BSC100N03MSGATMA1
Infineon Technologies

MOSFET N-CH 30V 44A TDSON-8

Package: 8-PowerTDFN

Stock147,726
VP0104N3-G
Microchip Technology

MOSFET P-CH 40V 0.25A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock3,536
BUK9217-75B,118
Nexperia USA Inc.

MOSFET N-CH 75V 64A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock21,588
AO3409
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 2.6A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,723,100
MCH3427-TL-E
onsemi

MOSFET N-CH 20V 4A 3MCPH

Package: -

Request a Quote
HUF76113SK8
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR5505	Infineon Technologies	MOSFET P-CH 55V 18A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,704	MOSFET (Metal Oxide)	55V	18A (Tc)	10V	4V @ 250µA	32nC @ 10V	650pF @ 25V	±20V	-	57W (Tc)	110 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SIHW23N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 23A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2418pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 158 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock7,984	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	4V @ 250µA	95nC @ 10V	2418pF @ 100V	±20V	-	227W (Tc)	158 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
SI7601DN-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 16A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 11A, 4.5V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock6,000	MOSFET (Metal Oxide)	20V	16A (Tc)	2.5V, 4.5V	1.6V @ 250µA	27nC @ 5V	1870pF @ 10V	±12V	-	3.8W (Ta), 52W (Tc)	19.2 mOhm @ 11A, 4.5V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
NTD20N06-1G	ON Semiconductor	MOSFET N-CH 60V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.88W (Ta), 60W (Tj) Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,648	MOSFET (Metal Oxide)	60V	20A (Ta)	10V	4V @ 250µA	30nC @ 10V	1015pF @ 25V	±20V	-	1.88W (Ta), 60W (Tj)	46 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRFI624G	Vishay Siliconix	MOSFET N-CH 250V 3.4A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock11,988	MOSFET (Metal Oxide)	250V	3.4A (Tc)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	30W (Tc)	1.1 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
BUK754R3-75C,127	NXP	MOSFET N-CH 75V 100A TO220AB-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11659pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,296	MOSFET (Metal Oxide)	75V	100A (Tc)	10V	4V @ 1mA	142nC @ 10V	11659pF @ 25V	±20V	-	333W (Tc)	4.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AUIRFSA8409-7TRL	Infineon Technologies	MOSFET NCH 40V 523A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 523A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13975pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 0.69 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock5,760	MOSFET (Metal Oxide)	40V	523A (Tc)	10V	3.9V @ 250µA	460nC @ 10V	13975pF @ 25V	±20V	-	375W (Tc)	0.69 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab)
IRLU2905PBF	Infineon Technologies	MOSFET N-CH 55V 42A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock125,964	MOSFET (Metal Oxide)	55V	42A (Tc)	-	2V @ 250µA	48nC @ 5V	1700pF @ 25V	-	-	-	27 mOhm @ 25A, 10V	-	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
BSC0500NSIATMA1	Infineon Technologies	MOSFET N-CH 30V 35A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,360	MOSFET (Metal Oxide)	30V	35A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	52nC @ 10V	3300pF @ 15V	±20V	-	2.5W (Ta), 69W (Tc)	1.3 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPI45N06S409AKSA2	Infineon Technologies	MOSFET N-CH 60V 45A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3785pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,536	MOSFET (Metal Oxide)	60V	45A (Tc)	10V	4V @ 34µA	47nC @ 10V	3785pF @ 25V	±20V	-	71W (Tc)	9.4 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IXFR80N15Q	IXYS	MOSFET N-CH 150V 75A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock103,464	MOSFET (Metal Oxide)	150V	75A (Tc)	10V	4V @ 4mA	180nC @ 10V	4600pF @ 25V	±20V	-	310W (Tc)	22.5 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IRFI620GPBF	Vishay Siliconix	MOSFET N-CH 200V 4.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock14,256	MOSFET (Metal Oxide)	200V	4.1A (Tc)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	30W (Tc)	800 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRLR2905PBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,000	MOSFET (Metal Oxide)	55V	42A (Tc)	4V, 10V	2V @ 250µA	48nC @ 5V	1700pF @ 25V	±16V	-	110W (Tc)	27 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF9388TRPBF	Infineon Technologies	MOSFET P-CH 30V 12A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 12A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock496,944	MOSFET (Metal Oxide)	30V	12A (Ta)	10V, 20V	2.4V @ 25µA	52nC @ 10V	1680pF @ 25V	±25V	-	2.5W (Ta)	8.5 mOhm @ 12A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSC100N03MSGATMA1	Infineon Technologies	MOSFET N-CH 30V 44A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock147,726	MOSFET (Metal Oxide)	30V	12A (Ta), 44A (Tc)	4.5V, 10V	2V @ 250µA	23nC @ 10V	1700pF @ 15V	±20V	-	2.5W (Ta), 30W (Tc)	10 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
VP0104N3-G	Microchip Technology	MOSFET P-CH 40V 0.25A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock3,536	MOSFET (Metal Oxide)	40V	250mA (Tj)	5V, 10V	3.5V @ 1mA	-	60pF @ 25V	±20V	-	1W (Tc)	8 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
BUK9217-75B,118	Nexperia USA Inc.	MOSFET N-CH 75V 64A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4029pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 185°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock21,588	MOSFET (Metal Oxide)	75V	64A (Tc)	5V, 10V	2V @ 1mA	35nC @ 5V	4029pF @ 25V	±15V	-	167W (Tc)	15 mOhm @ 25A, 10V	-55°C ~ 185°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
AO3409	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 2.6A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,723,100	MOSFET (Metal Oxide)	30V	2.6A (Ta)	4.5V, 10V	3V @ 250µA	9nC @ 10V	370pF @ 15V	±20V	-	1.4W (Ta)	130 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3L	TO-236-3, SC-59, SOT-23-3
MCH3427-TL-E	onsemi	MOSFET N-CH 20V 4A 3MCPH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 2A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCPH Package / Case: 3-SMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	4A (Ta)	-	-	6 nC @ 4 V	400 pF @ 10 V	-	-	1W (Ta)	52mOhm @ 2A, 4V	150°C (TJ)	Surface Mount	3-MCPH	3-SMD, Flat Leads
HUF76113SK8	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: US8 Package / Case: 8-VFSOP (0.091", 2.30mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	6.5A (Ta)	4.5V, 10V	3V @ 250µA	21 nC @ 10 V	585 pF @ 25 V	±20V	-	2.5W (Ta)	30mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	US8	8-VFSOP (0.091", 2.30mm Width)
FCPF165N65S3R0L	Fairchild Semiconductor	FCPF165N65S3R0L - POWER MOSFET, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 410µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	19A (Tc)	10V	4.5V @ 410µA	35 nC @ 10 V	1415 pF @ 400 V	±30V	-	35W (Tc)	165mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
IMT65R107M1HXUMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: -	Stock5,520	SiCFET (Silicon Carbide)	650 V	-	18V	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-1	8-PowerSFN
CDF56G6511N-TR13-PBFREE	Central Semiconductor Corp	650V, 11A, N-CHANNEL GAN FET IN FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V Vgs (Max): +7V, -1.4V FET Feature: - Power Dissipation (Max): 1.1W (Ta), 84W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerVDFN	Package: -	Stock7,440	GaNFET (Gallium Nitride)	650 V	11.5A (Tc)	6V	2.5V @ 12.2mA	2.8 nC @ 6 V	96 pF @ 400 V	+7V, -1.4V	-	1.1W (Ta), 84W (Tc)	190mOhm @ 3.9A, 6V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	8-DFN (5x6)	8-PowerVDFN
MMBF1374T1	onsemi	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIJA58ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 32.3A/109A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 20 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock17,355	MOSFET (Metal Oxide)	40 V	32.3A (Ta), 109A (Tc)	4.5V, 10V	2.4V @ 250µA	61 nC @ 10 V	3030 pF @ 20 V	+20V, -16V	-	5W (Ta), 56.8W (Tc)	2.65mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
RFP10N15L	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	10A (Tc)	5V	-	-	1200 pF @ 25 V	±10V	-	60W (Tc)	300mOhm @ 5A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
GP2T040A120H	SemiQ	SIC MOSFET 1200V 40M TO-247-4L FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 322W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock165	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	20V	4V @ 10mA	118 nC @ 20 V	3192 pF @ 1000 V	+25V, -10V	-	322W (Tc)	52mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
IV1Q12050T3	Inventchip	SIC MOSFET, 1200V 50MOHM, TO-247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.2V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 327W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	58A (Tc)	20V	3.2V @ 6mA	120 nC @ 20 V	2770 pF @ 800 V	+20V, -5V	-	327W (Tc)	65mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3