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Infineon Technologies |
MOSFET N-CH 55V 53A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
- Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,536 |
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MOSFET (Metal Oxide) | 55V | 53A (Tc) | 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | ±20V | - | 3.8W (Ta), 107W (Tc) | 16.5 mOhm @ 28A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 30V 3.1A 1206-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock133,200 |
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MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 2.5V, 4.5V | 600mV @ 250µA (Min) | 11nC @ 4.5V | - | ±12V | - | 1.3W (Ta) | 85 mOhm @ 3.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 1.2A UFM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 310 mOhm @ 600mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock3,776 |
|
MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 4V, 10V | 2.3V @ 100µA | - | 36pF @ 10V | ±20V | - | 500mW (Ta) | 310 mOhm @ 600mA, 10V | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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NXP |
MOSFET N-CH 30V LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock4,608 |
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MOSFET (Metal Oxide) | 30V | - | - | - | - | - | - | - | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 12A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock63,804 |
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MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 4V @ 250µA | 23nC @ 20V | 300pF @ 25V | ±20V | - | 53W (Tc) | 150 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 41A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock4,736 |
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MOSFET (Metal Oxide) | 40V | 41A (Ta), 270A (Tc) | 4.5V, 10V | 2V @ 250µA | 8.6nC @ 4.5V | 5700pF @ 20V | ±20V | - | 3.2W (Ta), 140W (Tc) | 1.1 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 70A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 72W (Tc)
- Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 35A, 15V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock7,584 |
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MOSFET (Metal Oxide) | 100V | 70A (Ta) | 10V, 15V | 4V @ 1mA | 26nC @ 10V | 2010pF @ 50V | ±20V | - | 2.1W (Ta), 72W (Tc) | 10.8 mOhm @ 35A, 15V | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 20A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock6,704 |
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MOSFET (Metal Oxide) | 60V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 2V @ 250µA | 33.7nC @ 10V | 2164pF @ 25V | ±20V | - | 3.7W (Ta), 79W (Tc) | 4.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 9A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 72W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,344 |
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MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 720pF @ 25V | ±30V | - | 3.13W (Ta), 72W (Tc) | 400 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 900V 6A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock103,464 |
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MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 4.5V @ 250µA | 35nC @ 10V | 1450pF @ 25V | ±30V | - | 50W (Tc) | 2.2 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 30V 6A PQFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-PQFN (2x2)
- Package / Case: 6-PowerVDFN
|
Package: 6-PowerVDFN |
Stock17,016 |
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MOSFET (Metal Oxide) | 30V | 6A (Ta), 13A (Tc) | 4.5V, 10V | 2.4V @ 25µA | 13nC @ 10V | 580pF @ 25V | ±20V | - | 2.1W (Ta) | 37 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 60V 4A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock263,892 |
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MOSFET (Metal Oxide) | 60V | 4A (Tc) | 5V, 10V | 2.8V @ 250µA | 9nC @ 5V | 340pF @ 25V | ±16V | - | 3.3W (Tc) | 100 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 40V 130A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock32,640 |
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MOSFET (Metal Oxide) | 40V | 130A (Tc) | 4.5V, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | ±16V | - | 200W (Tc) | 6.5 mOhm @ 78A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 100V 13.2A TO-220F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock81,288 |
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MOSFET (Metal Oxide) | 100V | 13.2A (Tc) | 10V | 4V @ 250µA | 50nC @ 10V | 1500pF @ 25V | ±30V | - | 45W (Tc) | 125 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 100V 25A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 12.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock240,000 |
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MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 4.5V @ 250µA | 14nC @ 10V | 920pF @ 50V | ±20V | - | 50W (Tc) | 35 mOhm @ 12.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 30V 100A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 212nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12493pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock33,432 |
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MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 212nC @ 10V | 12493pF @ 12V | ±20V | - | 306W (Tc) | 1.7 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 1.5A SC70-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 16V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock468,000 |
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MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 1V @ 250µA | - | 320pF @ 16V | ±12V | - | 250mW (Ta) | 150 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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IXYS |
MOSFET N-CH 200V 58A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock423,732 |
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MOSFET (Metal Oxide) | 200V | 58A (Tc) | 10V | 4V @ 4mA | 220nC @ 10V | 4400pF @ 25V | ±20V | - | 300W (Tc) | 40 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 1.4A SSOT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 145pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,935,776 |
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MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4.5V, 10V | 3V @ 250µA | 1.8nC @ 4.5V | 145pF @ 15V | ±20V | - | 500mW (Ta) | 160 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET N-CH 1500V 2.5A H2PAK-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
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Package: TO-263-3, D2Pak (2 Leads + Tab) Variant |
Stock35,760 |
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MOSFET (Metal Oxide) | 1500V | 2.5A (Tc) | 10V | 5V @ 250µA | 29.3nC @ 10V | 939pF @ 25V | ±30V | - | 140W (Tc) | 9 Ohm @ 1.3A, 10V | 150°C (TJ) | Surface Mount | H2PAK | TO-263-3, D2Pak (2 Leads + Tab) Variant |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 49mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK
- Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 3V @ 250µA | 20 nC @ 10 V | 645 pF @ 25 V | ±16V | - | 60W (Tc) | 49mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK | TO-251-3 Short Leads, IPAK, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 200V 9A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
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MOSFET (Metal Oxide) | 200 V | 9A (Tc) | - | 4V @ 250µA | 43 nC @ 10 V | 800 pF @ 25 V | ±20V | - | 74W (Tc) | 400mOhm @ 5.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 1.5A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
- Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: - |
Stock11,772 |
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MOSFET (Metal Oxide) | 100 V | 1.5A (Tc) | 10V | 4V @ 250µA | 8.3 nC @ 10 V | 180 pF @ 25 V | ±20V | - | 2W (Ta), 3.1W (Tc) | 540mOhm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Nexperia USA Inc. |
MOSFET N-CH 40V 325A LFPAK88
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 325A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10322 pF @ 25 V
- Vgs (Max): +20V, -10V
- FET Feature: -
- Power Dissipation (Max): 375W (Ta)
- Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK88 (SOT1235)
- Package / Case: SOT-1235
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 325A (Ta) | 10V | 3.6V @ 1mA | 137 nC @ 10 V | 10322 pF @ 25 V | +20V, -10V | - | 375W (Ta) | 1mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK88 (SOT1235) | SOT-1235 |
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Infineon Technologies |
OPTIMOS 5 POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 365A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
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Package: - |
Stock3,090 |
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MOSFET (Metal Oxide) | 100 V | 37A (Ta), 365A (Tc) | 6V, 10V | 3.8V @ 280µA | 211 nC @ 10 V | 16000 pF @ 50 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.4mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
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Diodes Incorporated |
MOSFET N-CH 24V 70A POWERDI3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 24 V | 70A (Tc) | 2.5V, 10V | 1.45V @ 250µA | 53.7 nC @ 10 V | 1683 pF @ 15 V | ±12V | - | 1.2W (Ta) | 5mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 2.8A TSOT26 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 2.8A (Ta) | 2.5V, 10V | 1.3V @ 250µA | 7.3 nC @ 4.5 V | 708 pF @ 15 V | ±12V | - | 1.25W (Ta) | 75mOhm @ 4.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
GANFET N-CH 600V 31A 8HSOF
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
- Vgs (Max): -10V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-3
- Package / Case: 8-PowerSFN
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Package: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | 1.6V @ 2.6mA | - | 380 pF @ 400 V | -10V | - | 125W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
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