Page 1132 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLU8726PBF
Infineon Technologies

MOSFET N-CH 30V 86A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock253,524
IRF6678TR1PBF
Infineon Technologies

MOSFET N-CH 30V 30A DIRECTFET

Package: DirectFET? Isometric MX

Stock24,000
GP2M010A065H
Global Power Technologies Group

MOSFET N-CH 650V 9.5A TO220

Package: TO-220-3

Stock6,064
2SK4198LS
ON Semiconductor

MOSFET N-CH 600V 5A TO-220FI

Package: TO-220-3 Full Pack

Stock3,632
AUIRF7769L2TR
Infineon Technologies

MOSFET N-CH 100V 375A DIRECTFET

Package: DirectFET? Isometric L8

Stock3,376
AUIRF7805QTR
Infineon Technologies

MOSFET N CH 30V 13A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,920
APT26M100JCU2
Microsemi Corporation

MOSFET N-CH 1000V 26A SOT227

Package: SOT-227-4, miniBLOC

Stock5,088
BUK762R4-60E,118
Nexperia USA Inc.

MOSFET N-CH 60V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,104
TP2522N8-G
Microchip Technology

MOSFET P-CH 220V 0.26A SOT89-3

Package: TO-243AA

Stock4,912
NTMFS4931NT3G
ON Semiconductor

MOSFET N-CH 30V 236A SO8FL

Package: 8-PowerTDFN

Stock7,952
5HN01SS-TL-E
ON Semiconductor

MOSFET N-CH 50V 100MA SSFP3

Package: 3-SMD, Flat Leads

Stock154,800
IPP60R160P6XKSA1
Infineon Technologies

MOSFET N-CH 600V TO220-3

Package: TO-220-3

Stock6,448
SUM90N03-2M2P-E3
Vishay Siliconix

MOSFET N-CH 30V 90A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,960
AUIRFR5410TRL
Infineon Technologies

MOSFET P-CH 100V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,176
IPD60R2K1CEAUMA1
Infineon Technologies

MOSFET N-CH 600V 2.3A TO-252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,216
NX138AKR
Nexperia USA Inc.

NX138AK/TO-236AB/REEL 7" Q3/T4

Package: TO-236-3, SC-59, SOT-23-3

Stock7,312
FCD7N60TM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 600V 7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,512
IRFU4105ZPBF
Infineon Technologies

MOSFET N-CH 55V 30A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock15,876
FDC640P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 4.5A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,864,080
IRF5210SPBF
Infineon Technologies

MOSFET P-CH 100V 38A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock985,248

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLU8726PBF	Infineon Technologies	MOSFET N-CH 30V 86A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock253,524	MOSFET (Metal Oxide)	30V	86A (Tc)	4.5V, 10V	2.35V @ 50µA	23nC @ 4.5V	2150pF @ 15V	±20V	-	75W (Tc)	5.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRF6678TR1PBF	Infineon Technologies	MOSFET N-CH 30V 30A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock24,000	MOSFET (Metal Oxide)	30V	30A (Ta), 150A (Tc)	4.5V, 10V	2.25V @ 250µA	65nC @ 4.5V	5640pF @ 15V	±20V	-	2.8W (Ta), 89W (Tc)	2.2 mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
GP2M010A065H	Global Power Technologies Group	MOSFET N-CH 650V 9.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 198W (Tc) Rds On (Max) @ Id, Vgs: 820 mOhm @ 4.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,064	MOSFET (Metal Oxide)	650V	9.5A (Tc)	10V	5V @ 250µA	36nC @ 10V	1670pF @ 25V	±30V	-	198W (Tc)	820 mOhm @ 4.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
2SK4198LS	ON Semiconductor	MOSFET N-CH 600V 5A TO-220FI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 2.34 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,632	MOSFET (Metal Oxide)	600V	5A (Tc)	10V	5V @ 1mA	14.3nC @ 10V	360pF @ 30V	±30V	-	2W (Ta), 30W (Tc)	2.34 Ohm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220FI(LS)	TO-220-3 Full Pack
AUIRF7769L2TR	Infineon Technologies	MOSFET N-CH 100V 375A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	Package: DirectFET? Isometric L8	Stock3,376	MOSFET (Metal Oxide)	100V	375A (Tc)	10V	4V @ 250µA	300nC @ 10V	11560pF @ 25V	±20V	-	3.3W (Ta), 125W (Tc)	3.5 mOhm @ 74A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8
AUIRF7805QTR	Infineon Technologies	MOSFET N CH 30V 13A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,920	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V	3V @ 250µA	31nC @ 5V	-	±12V	-	2.5W (Ta)	11 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
APT26M100JCU2	Microsemi Corporation	MOSFET N-CH 1000V 26A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,088	MOSFET (Metal Oxide)	1000V	26A (Tc)	10V	5V @ 2.5mA	305nC @ 10V	7868pF @ 25V	±30V	-	543W (Tc)	396 mOhm @ 18A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
BUK762R4-60E,118	Nexperia USA Inc.	MOSFET N-CH 60V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,104	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 1mA	158nC @ 10V	11180pF @ 25V	±20V	-	357W (Tc)	2.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TP2522N8-G	Microchip Technology	MOSFET P-CH 220V 0.26A SOT89-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 220V Current - Continuous Drain (Id) @ 25°C: 260mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock4,912	MOSFET (Metal Oxide)	220V	260mA (Tj)	4.5V, 10V	2.4V @ 1mA	-	125pF @ 25V	±20V	-	1.6W (Ta)	12 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
NTMFS4931NT3G	ON Semiconductor	MOSFET N-CH 30V 236A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9821pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,952	MOSFET (Metal Oxide)	30V	23A (Ta), 246A (Tc)	4.5V, 10V	2.2V @ 250µA	128nC @ 10V	9821pF @ 15V	±20V	-	950mW (Ta)	1.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
5HN01SS-TL-E	ON Semiconductor	MOSFET N-CH 50V 100MA SSFP3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 3-SSFP Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock154,800	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	3-SSFP	3-SMD, Flat Leads
IPP60R160P6XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,448	MOSFET (Metal Oxide)	600V	23.8A (Tc)	10V	4.5V @ 750µA	44nC @ 10V	2080pF @ 100V	±20V	-	176W (Tc)	160 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
SUM90N03-2M2P-E3	Vishay Siliconix	MOSFET N-CH 30V 90A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 257nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12065pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,960	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	2.5V @ 250µA	257nC @ 10V	12065pF @ 15V	±20V	-	3.75W (Ta), 250W (Tc)	2.2 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRFR5410TRL	Infineon Technologies	MOSFET P-CH 100V 13A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,176	MOSFET (Metal Oxide)	100V	13A (Tc)	10V	4V @ 250µA	58nC @ 10V	760pF @ 25V	±20V	-	66W (Tc)	205 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R2K1CEAUMA1	Infineon Technologies	MOSFET N-CH 600V 2.3A TO-252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 760mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,216	MOSFET (Metal Oxide)	600V	2.3A (Tc)	10V	3.5V @ 60µA	6.7nC @ 10V	140pF @ 100V	±20V	-	38W (Tc)	2.1 Ohm @ 760mA, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NX138AKR	Nexperia USA Inc.	NX138AK/TO-236AB/REEL 7" Q3/T4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 325mW (Ta) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,312	MOSFET (Metal Oxide)	60V	190mA (Ta)	2.5V, 10V	1.5V @ 250µA	1.4nC @ 10V	20pF @ 30V	±20V	-	325mW (Ta)	4.5 Ohm @ 190mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
FCD7N60TM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,512	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	30nC @ 10V	920pF @ 25V	±30V	-	83W (Tc)	600 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU4105ZPBF	Infineon Technologies	MOSFET N-CH 55V 30A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock15,876	MOSFET (Metal Oxide)	55V	30A (Tc)	10V	4V @ 250µA	27nC @ 10V	740pF @ 25V	±20V	-	48W (Tc)	24.5 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
FDC640P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 4.5A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,864,080	MOSFET (Metal Oxide)	20V	4.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	13nC @ 4.5V	890pF @ 10V	±12V	-	1.6W (Ta)	53 mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
IRF5210SPBF	Infineon Technologies	MOSFET P-CH 100V 38A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock985,248	MOSFET (Metal Oxide)	100V	38A (Tc)	10V	4V @ 250µA	230nC @ 10V	2780pF @ 25V	±20V	-	3.1W (Ta), 170W (Tc)	60 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MGSF2N02ELT1G	ON Semiconductor	MOSFET N-CH 20V 2.8A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 5V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock875,004	MOSFET (Metal Oxide)	20V	2.8A (Ta)	2.5V, 4.5V	1V @ 250µA	3.5nC @ 4V	150pF @ 5V	±8V	-	1.25W (Ta)	85 mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IXTX90N25L2	IXYS	MOSFET N-CH 250V 90A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,088	MOSFET (Metal Oxide)	250V	90A (Tc)	10V	4.5V @ 3mA	640nC @ 10V	23000pF @ 25V	±20V	-	960W (Tc)	33 mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
G3R20MT17K	GeneSiC Semiconductor	SIC MOSFET N-CH 124A TO247-4 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.7V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 809W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock3,897	SiCFET (Silicon Carbide)	1700 V	124A (Tc)	15V	2.7V @ 15mA	400 nC @ 15 V	10187 pF @ 1000 V	±15V	-	809W (Tc)	26mOhm @ 75A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
QM3002K-ML	MOSLEADER	Single N 30V 5A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TSM056NH04CV-RGG	Taiwan Semiconductor Corporation	40V, 54A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1828 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3.1x3.1) Package / Case: 8-PowerWDFN	Package: -	Stock30,000	MOSFET (Metal Oxide)	40 V	16A (Ta), 54A (Tc)	7V, 10V	3.6V @ 250µA	29 nC @ 10 V	1828 pF @ 25 V	±20V	-	34W (Tc)	5.6mOhm @ 27A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (3.1x3.1)	8-PowerWDFN
UPA2750GR-1-E1-A	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK2534-TL-E	onsemi	NCH 10V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFN130N65X3	IXYS	DISCRETE MOSFET 130A 650V X3 SOT FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-