Page 1138 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFR12N25DCTRRP
Infineon Technologies

MOSFET N-CH 250V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,632
FQD5N50CTM_WS
Fairchild/ON Semiconductor

N-CHANNEL ADVANCE QFET C-SERIES

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,216
FQD2N90TF
Fairchild/ON Semiconductor

MOSFET N-CH 900V 1.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock93,768
FQAF19N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 15A TO-3PF

Package: SC-94

Stock2,000
IXFX27N80Q
IXYS

MOSFET N-CH 800V 27A PLUS 247

Package: TO-247-3

Stock3,424
IXTA130N10T7
IXYS

MOSFET N-CH 100V 130A TO-263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock6,784
IPA80R600P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

Package: TO-220-3 Full Pack

Stock3,808
TK7A65D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 7A TO-220SIS

Package: TO-220-3 Full Pack

Stock6,016
IRFIBC20GPBF
Vishay Siliconix

MOSFET N-CH 600V 1.7A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock23,040
FDMC013P030Z
Fairchild/ON Semiconductor

PT8 P Z -30V/-25V ZENER POWERTRE

Package: 8-PowerWDFN

Stock3,264
NVTFS4823NTAG
ON Semiconductor

MOSFET N-CH 30V 13A 8WDFN

Package: 8-PowerWDFN

Stock2,448
STL90N3LLH6
STMicroelectronics

MOSFET N-CH 30V 24A POWERFLAT5X6

Package: 8-PowerVDFN

Stock6,060
MMIX1T132N50P3
IXYS

SMPD HIPERFETS & MOSFETS

Package: 24-PowerSMD, 22 Leads

Stock4,192
STP78N75F4
STMicroelectronics

MOSFET N-CH 75V 78A TO220

Package: TO-220-3

Stock12,792
FDMC8622
Fairchild/ON Semiconductor

MOSFET N-CH 100V 4A POWER33

Package: 8-PowerWDFN

Stock12,120
BSZ065N03LS
Infineon Technologies

MOSFET N-CH 30V 12A TSDSON-8

Package: 8-PowerTDFN

Stock170,640
IRFPE50PBF
Vishay Siliconix

MOSFET N-CH 800V 7.8A TO-247AC

Package: TO-247-3

Stock7,080
IRFBE30SPBF
Vishay Siliconix

MOSFET N-CH 800V 4.1A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,642
SIHFPS40N60K-GE3
Vishay Siliconix

POWER MOSFET SUPER-247, 130 M @

Package: -

Stock660
APT8014L2FLLG
Microchip Technology

MOSFET N-CH 800V 52A 264 MAX

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR12N25DCTRRP	Infineon Technologies	MOSFET N-CH 250V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,632	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	5V @ 250µA	35nC @ 10V	810pF @ 25V	±30V	-	144W (Tc)	260 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD5N50CTM_WS	Fairchild/ON Semiconductor	N-CHANNEL ADVANCE QFET C-SERIES FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,216	MOSFET (Metal Oxide)	500V	4A (Tc)	10V	4V @ 250µA	24nC @ 10V	625pF @ 25V	±30V	-	2.5W (Ta)	1.4 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2N90TF	Fairchild/ON Semiconductor	MOSFET N-CH 900V 1.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 7.2 Ohm @ 850mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock93,768	MOSFET (Metal Oxide)	900V	1.7A (Tc)	10V	5V @ 250µA	15nC @ 10V	500pF @ 25V	±30V	-	2.5W (Ta), 50W (Tc)	7.2 Ohm @ 850mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQAF19N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 15A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock2,000	MOSFET (Metal Oxide)	200V	15A (Tc)	10V	5V @ 250µA	40nC @ 10V	1600pF @ 25V	±30V	-	85W (Tc)	150 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
IXFX27N80Q	IXYS	MOSFET N-CH 800V 27A PLUS 247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,424	MOSFET (Metal Oxide)	800V	27A (Tc)	10V	4.5V @ 4mA	170nC @ 10V	7600pF @ 25V	±20V	-	500W (Tc)	320 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXTA130N10T7	IXYS	MOSFET N-CH 100V 130A TO-263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock6,784	MOSFET (Metal Oxide)	100V	130A (Tc)	10V	4.5V @ 250µA	104nC @ 10V	5080pF @ 25V	±20V	-	360W (Tc)	9.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IPA80R600P7XKSA1	Infineon Technologies	MOSFET N-CH 800V COOLMOS TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 500V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,808	MOSFET (Metal Oxide)	800V	8A (Tc)	10V	3.5V @ 170µA	20nC @ 10V	570pF @ 500V	±20V	-	28W (Tc)	600 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
TK7A65D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 7A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 980 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,016	MOSFET (Metal Oxide)	650V	7A (Ta)	10V	4V @ 1mA	24nC @ 10V	1200pF @ 25V	±30V	-	45W (Tc)	980 mOhm @ 3.5A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
IRFIBC20GPBF	Vishay Siliconix	MOSFET N-CH 600V 1.7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock23,040	MOSFET (Metal Oxide)	600V	1.7A (Tc)	10V	4V @ 250µA	18nC @ 10V	350pF @ 25V	±20V	-	30W (Tc)	4.4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
FDMC013P030Z	Fairchild/ON Semiconductor	PT8 P Z -30V/-25V ZENER POWERTRE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,264	MOSFET (Metal Oxide)	30V	54A (Tc)	4.5V, 10V	3V @ 250µA	135nC @ 10V	-	±25V	-	30W (Tc)	7 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
NVTFS4823NTAG	ON Semiconductor	MOSFET N-CH 30V 13A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,448	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2.5V @ 250µA	6nC @ 4.5V	750pF @ 12V	±20V	-	3.1W (Ta), 21W (Tc)	10.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
STL90N3LLH6	STMicroelectronics	MOSFET N-CH 30V 24A POWERFLAT5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,060	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	1V @ 250µA	17nC @ 4.5V	1690pF @ 25V	±20V	-	60W (Tc)	4.5 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
MMIX1T132N50P3	IXYS	SMPD HIPERFETS & MOSFETS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 43 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Polar3? Package / Case: 24-PowerSMD, 22 Leads	Package: 24-PowerSMD, 22 Leads	Stock4,192	MOSFET (Metal Oxide)	500V	63A (Tc)	10V	5V @ 8mA	267nC @ 10V	18600pF @ 25V	±30V	-	520W (Tc)	43 mOhm @ 66A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Polar3?	24-PowerSMD, 22 Leads
STP78N75F4	STMicroelectronics	MOSFET N-CH 75V 78A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5015pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock12,792	MOSFET (Metal Oxide)	75V	78A (Tc)	10V	4V @ 250µA	76nC @ 10V	5015pF @ 25V	±20V	-	150W (Tc)	11 mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDMC8622	Fairchild/ON Semiconductor	MOSFET N-CH 100V 4A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 402pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 56 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock12,120	MOSFET (Metal Oxide)	100V	4A (Ta), 16A (Tc)	6V, 10V	4V @ 250µA	7.3nC @ 10V	402pF @ 50V	±20V	-	2.5W (Ta), 31W (Tc)	56 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
BSZ065N03LS	Infineon Technologies	MOSFET N-CH 30V 12A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock170,640	MOSFET (Metal Oxide)	30V	12A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	10nC @ 10V	670pF @ 15V	±20V	-	2.1W (Ta), 26W (Tc)	6.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
IRFPE50PBF	Vishay Siliconix	MOSFET N-CH 800V 7.8A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,080	MOSFET (Metal Oxide)	800V	7.8A (Tc)	10V	4V @ 250µA	200nC @ 10V	3100pF @ 25V	±20V	-	190W (Tc)	1.2 Ohm @ 4.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFBE30SPBF	Vishay Siliconix	MOSFET N-CH 800V 4.1A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,642	MOSFET (Metal Oxide)	800V	4.1A (Tc)	10V	4V @ 250µA	78nC @ 10V	1300pF @ 25V	±20V	-	125W (Tc)	3 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHFPS40N60K-GE3	Vishay Siliconix	POWER MOSFET SUPER-247, 130 M @ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 570W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247™ (TO-274AA) Package / Case: TO-274AA	Package: -	Stock660	MOSFET (Metal Oxide)	600 V	40A (Tc)	10V	5V @ 250µA	330 nC @ 10 V	7970 pF @ 25 V	±30V	-	570W (Tc)	130mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-247™ (TO-274AA)	TO-274AA
APT8014L2FLLG	Microchip Technology	MOSFET N-CH 800V 52A 264 MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: 264 MAX™ [L2] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	52A (Tc)	-	5V @ 5mA	285 nC @ 10 V	7238 pF @ 25 V	-	-	-	160mOhm @ 26A, 10V	-	Through Hole	264 MAX™ [L2]	TO-264-3, TO-264AA
IMT65R163M1HXUMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: -	Stock6,000	SiCFET (Silicon Carbide)	650 V	-	18V	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-1	8-PowerSFN
NVMFS6H836NLT1G	onsemi	MOSFET N-CH 80V 16A/77A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock3,876	MOSFET (Metal Oxide)	80 V	16A (Ta), 77A (Tc)	4.5V, 10V	2V @ 95µA	34 nC @ 10 V	1950 pF @ 40 V	±20V	-	3.7W (Ta), 89W (Tc)	6.2mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
XP2302GN	YAGEO XSEMI	MOSFET N-CH 20V 3.2A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 145 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.38W (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock2,955	MOSFET (Metal Oxide)	20 V	3.2A (Ta)	2.5V, 4.5V	1.2V @ 250µA	4.4 nC @ 4.5 V	145 pF @ 10 V	±12V	-	1.38W (Ta)	85mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SPD03N50C3BTMA1	Infineon Technologies	MOSFET N-CH 560V 3.2A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	560 V	3.2A (Tc)	10V	3.9V @ 135µA	15 nC @ 10 V	350 pF @ 25 V	±20V	-	38W (Tc)	1.4Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCW200N10Y-TP	Micro Commercial Co	MOSFET N-CH 200A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 200A Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 237 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13310 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 312W Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	200A	6V, 10V	4V @ 250µA	237 nC @ 10 V	13310 pF @ 50 V	±20V	-	312W	2.1mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
NVMFWS016N06CT1G	onsemi	MOSFET N-CH 60V 10A/33A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	10A (Ta), 33A (Tc)	10V	4V @ 25µA	6.9 nC @ 10 V	489 pF @ 30 V	±20V	-	3.4W (Ta), 36W (Tc)	15.6mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SUM50010E-GE3	Vishay Siliconix	MOSFET N-CH 60V 150A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock4,245	MOSFET (Metal Oxide)	60 V	150A (Tc)	7.5V, 10V	4V @ 250µA	212 nC @ 10 V	10895 pF @ 30 V	±20V	-	375W (Tc)	1.75mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RXH100N03TB1	Rohm Semiconductor	4V DRIVE NCH MOSFET: MOSFETS ARE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock7,356	MOSFET (Metal Oxide)	30 V	10A (Ta)	4V, 10V	2.5V @ 1mA	11 nC @ 5 V	800 pF @ 10 V	±20V	-	2W (Ta)	13mOhm @ 10A, 10V	150°C	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)