Page 1141 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6711STR1PBF
Infineon Technologies

MOSFET N-CH 25V 19A DIRECTFET-SQ

Package: DirectFET? Isometric SQ

Stock2,688
IPI60R600CPAKSA1
Infineon Technologies

MOSFET N-CH 600V 6.1A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,528
IRLZ34NLPBF
Infineon Technologies

MOSFET N-CH 55V 30A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock242,880
RP1E090XNTCR
Rohm Semiconductor

MOSFET N-CH 30V 9A MPT6

Package: 6-SMD, Flat Leads

Stock4,144
FQB13N06TM
Fairchild/ON Semiconductor

MOSFET N-CH 60V 13A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,776
FQD10N20LTF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 7.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock164,016
IPU80R1K4CEAKMA1
Infineon Technologies

MOSFET N-CH 800V TO251-3

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,128
NTTFS4929NTAG
ON Semiconductor

MOSFET N-CH 30V 34A 8WDFN

Package: 8-PowerWDFN

Stock85,008
NTLUS3A90PZTAG
ON Semiconductor

MOSFET P-CH 20V 2.6A 6UDFN

Package: 6-PowerUFDFN

Stock122,340
BUK761R7-40E,118
Nexperia USA Inc.

MOSFET N-CH 40V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,312
STP9NK50ZFP
STMicroelectronics

MOSFET N-CH 500V 7.2A TO-220FP

Package: TO-220-3 Full Pack

Stock764,160
IPD053N06NATMA1
Infineon Technologies

MOSFET N-CH 60V 18A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,952
SI3134KL-TP
Micro Commercial Co

N-CHANNEL MOSFET, SOT-883 PACKAG

Package: SC-101, SOT-883

Stock7,104
RE1C002ZPTL
Rohm Semiconductor

1.2V DRIVE PCH MOSFET

Package: SC-89, SOT-490

Stock216,000
STD4NK50Z-1
STMicroelectronics

MOSFET N-CH 500V 3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock466,656
DMP510DL-7
Diodes Incorporated

MOSFET P-CH 50V 0.18A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock24,384
G7K2N20HE
Goford Semiconductor

MOSFET N-CH ESD 200V 2A SOT-223

Package: -

Request a Quote
NVHL080N120SC1
onsemi

SICFET N-CH 1200V 44A TO247-3

Package: -

Stock1,155
IMW120R030M1HXKSA1
Infineon Technologies

SICFET N-CH 1.2KV 56A TO247-3

Package: -

Stock5,061
CMS11N10Q8-HF
Comchip Technology

MOSFET N-CH 100V 11A 8SOP

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6711STR1PBF	Infineon Technologies	MOSFET N-CH 25V 19A DIRECTFET-SQ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	Package: DirectFET? Isometric SQ	Stock2,688	MOSFET (Metal Oxide)	25V	19A (Ta), 84A (Tc)	4.5V, 10V	2.35V @ 25µA	20nC @ 4.5V	1810pF @ 13V	±20V	-	2.2W (Ta), 42W (Tc)	3.8 mOhm @ 19A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SQ	DirectFET? Isometric SQ
IPI60R600CPAKSA1	Infineon Technologies	MOSFET N-CH 600V 6.1A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,528	MOSFET (Metal Oxide)	600V	6.1A (Tc)	10V	3.5V @ 220µA	27nC @ 10V	550pF @ 100V	±20V	-	60W (Tc)	600 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRLZ34NLPBF	Infineon Technologies	MOSFET N-CH 55V 30A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock242,880	MOSFET (Metal Oxide)	55V	30A (Tc)	4V, 10V	2V @ 250µA	25nC @ 5V	880pF @ 25V	±16V	-	3.8W (Ta), 68W (Tc)	35 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
RP1E090XNTCR	Rohm Semiconductor	MOSFET N-CH 30V 9A MPT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock4,144	MOSFET (Metal Oxide)	30V	9A (Ta)	4V, 10V	2.5V @ 1mA	6.8nC @ 5V	440pF @ 10V	±20V	-	2W (Ta)	17 mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
FQB13N06TM	Fairchild/ON Semiconductor	MOSFET N-CH 60V 13A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 135 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,776	MOSFET (Metal Oxide)	60V	13A (Tc)	10V	4V @ 250µA	7.5nC @ 10V	310pF @ 25V	±25V	-	3.75W (Ta), 45W (Tc)	135 mOhm @ 6.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD10N20LTF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 51W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock164,016	MOSFET (Metal Oxide)	200V	7.6A (Tc)	5V, 10V	2V @ 250µA	17nC @ 5V	830pF @ 25V	±20V	-	2.5W (Ta), 51W (Tc)	360 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IPU80R1K4CEAKMA1	Infineon Technologies	MOSFET N-CH 800V TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,128	MOSFET (Metal Oxide)	800V	3.9A (Tc)	10V	3.9V @ 240µA	23nC @ 10V	570pF @ 100V	±20V	-	63W (Tc)	1.4 Ohm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-251-3	TO-251-3 Short Leads, IPak, TO-251AA
NTTFS4929NTAG	ON Semiconductor	MOSFET N-CH 30V 34A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 34A(Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 810mW (Ta), 22.3W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock85,008	MOSFET (Metal Oxide)	30V	6.6A (Ta), 34A(Tc)	4.5V, 10V	2.2V @ 250µA	8.8nC @ 4.5V	920pF @ 15V	±20V	-	810mW (Ta), 22.3W (Tc)	11 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTLUS3A90PZTAG	ON Semiconductor	MOSFET P-CH 20V 2.6A 6UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (1.6x1.6) Package / Case: 6-PowerUFDFN	Package: 6-PowerUFDFN	Stock122,340	MOSFET (Metal Oxide)	20V	2.6A (Ta)	1.5V, 4.5V	1V @ 250µA	12.3nC @ 4.5V	950pF @ 10V	±8V	-	600mW (Ta)	62 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (1.6x1.6)	6-PowerUFDFN
BUK761R7-40E,118	Nexperia USA Inc.	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 324W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,312	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 1mA	118nC @ 10V	9700pF @ 25V	±20V	-	324W (Tc)	1.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STP9NK50ZFP	STMicroelectronics	MOSFET N-CH 500V 7.2A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock764,160	MOSFET (Metal Oxide)	500V	7.2A (Tc)	10V	4.5V @ 100µA	32nC @ 10V	910pF @ 25V	±30V	-	30W (Tc)	850 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPD053N06NATMA1	Infineon Technologies	MOSFET N-CH 60V 18A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.8V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,952	MOSFET (Metal Oxide)	60V	18A (Ta), 45A (Tc)	6V, 10V	2.8V @ 36µA	27nC @ 10V	2000pF @ 30V	±20V	-	3W (Ta), 83W (Tc)	5.3 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SI3134KL-TP	Micro Commercial Co	N-CHANNEL MOSFET, SOT-883 PACKAG FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-883 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock7,104	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	SOT-883	SC-101, SOT-883
RE1C002ZPTL	Rohm Semiconductor	1.2V DRIVE PCH MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3F (SOT-416FL) Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock216,000	MOSFET (Metal Oxide)	20V	200mA (Ta)	4.5V	1V @ 100µA	1.4nC @ 4.5V	115pF @ 10V	±10V	-	150W (Tc)	1.2 Ohm @ 200mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
STD4NK50Z-1	STMicroelectronics	MOSFET N-CH 500V 3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock466,656	MOSFET (Metal Oxide)	500V	3A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	310pF @ 25V	±30V	-	45W (Tc)	2.7 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
DMP510DL-7	Diodes Incorporated	MOSFET P-CH 50V 0.18A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 24.6pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock24,384	MOSFET (Metal Oxide)	50V	180mA (Ta)	5V	2V @ 1mA	-	24.6pF @ 25V	±30V	-	310mW (Ta)	10 Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
G7K2N20HE	Goford Semiconductor	MOSFET N-CH ESD 200V 2A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	2A (Tc)	4.5V, 10V	2.5V @ 250µA	-	-	±20V	-	1.8W (Tc)	700mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NVHL080N120SC1	onsemi	SICFET N-CH 1200V 44A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4.3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Vgs (Max): +25V, -15V FET Feature: - Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock1,155	SiCFET (Silicon Carbide)	1200 V	44A (Tc)	20V	4.3V @ 5mA	56 nC @ 20 V	1670 pF @ 800 V	+25V, -15V	-	348W (Tc)	110mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IMW120R030M1HXKSA1	Infineon Technologies	SICFET N-CH 1.2KV 56A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.7V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V Vgs (Max): +23V, -7V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	Package: -	Stock5,061	SiCFET (Silicon Carbide)	1200 V	56A (Tc)	15V, 18V	5.7V @ 10mA	63 nC @ 18 V	2120 pF @ 800 V	+23V, -7V	-	227W (Tc)	40mOhm @ 25A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
CMS11N10Q8-HF	Comchip Technology	MOSFET N-CH 100V 11A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4708 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	11A (Ta)	4.5V, 10V	2.4V @ 250µA	75 nC @ 10 V	4708 pF @ 25 V	±20V	-	3.1W (Ta)	14mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
3LN01SP-AC	onsemi	NCH 1.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTTFS010N10MCLTAG	onsemi	MOSFET N-CH 100V 10.7A/50A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta),52W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock4,050	MOSFET (Metal Oxide)	100 V	10.7A (Ta), 50A (Tc)	4.5V, 10V	3V @ 85µA	30 nC @ 10 V	2150 pF @ 50 V	±20V	-	2.3W (Ta),52W (Tc)	10.6mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
DI170N04D2-AQ	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8325 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89.2W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	170A (Tc)	10V	2V @ 250µA	162 nC @ 10 V	8325 pF @ 20 V	±20V	-	89.2W (Tc)	1.5mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AB (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RFP2N15	Harris Corporation	N-CHANNEL, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	2A (Tc)	10V	4V @ 250µA	-	200 pF @ 25 V	±20V	-	25W (Tc)	1.75Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
NVMYS2D4N04CTWG	onsemi	MOSFET N-CH 40V 30A/138A LFPAK4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) Package / Case: SOT-1023, 4-LFPAK	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	30A (Ta), 138A (Tc)	10V	3.5V @ 90µA	32 nC @ 10 V	2100 pF @ 25 V	±20V	-	3.9W (Ta), 83W (Tc)	2.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
PJD35N06A_L2_00001	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,055	MOSFET (Metal Oxide)	60 V	4.7A (Ta), 35A (Tc)	4.5V, 10V	2.5V @ 250µA	28 nC @ 10 V	1680 pF @ 20 V	±20V	-	1.1W (Ta), 63W (Tc)	21mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
NTE491SM	NTE Electronics, Inc	MOSFET N-CHANNEL 60V 115MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	115mA (Ta)	4.5V, 10V	2.5V @ 250µA	-	50 pF @ 25 V	±20V	-	200mW (Ta)	7.5Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
NVMFWS021N10MCLT1G	onsemi	PTNG 100V LL SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 42µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	8.4A (Ta), 31A (Tc)	4.5V, 10V	3V @ 42µA	13 nC @ 10 V	850 pF @ 50 V	±20V	-	3.6W (Ta), 49W (Tc)	23mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads