Page 1146 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRF540ZS
Infineon Technologies

MOSFET N-CH 100V 36A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,512
BSS83PL6327HTSA1
Infineon Technologies

MOSFET P-CH 60V 0.33A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,576
IRFS4610TRRPBF
Infineon Technologies

MOSFET N-CH 100V 73A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,448
VN2222LLRLRAG
ON Semiconductor

MOSFET N-CH 60V 150MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock5,904
IRFPG40
Vishay Siliconix

MOSFET N-CH 1000V 4.3A TO-247AC

Package: TO-247-3

Stock104,100
IRF3205ZLPBF
Infineon Technologies

MOSFET N-CH 55V 75A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock269,088
IXFE44N60
IXYS

MOSFET N-CH 600V 41A SOT-227B

Package: SOT-227-4, miniBLOC

Stock4,656
IRFI9610GPBF
Vishay Siliconix

MOSFET P-CH 200V 2A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock23,160
AOTF474
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 9A TO220FL

Package: TO-220-3 Full Pack

Stock7,824
IRLU120NPBF
Infineon Technologies

MOSFET N-CH 100V 10A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock25,548
IPD65R380C6BTMA1
Infineon Technologies

MOSFET N-CH 650V 10.6A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,216
STL7N10F7
STMicroelectronics

MOSFET N-CH 100V 7A 8POWERFLAT

Package: 8-PowerVDFN

Stock7,776
CZDM1003N TR
Central Semiconductor Corp

MOSFET N-CH 100V 3A SOT-223

Package: TO-261-4, TO-261AA

Stock19,224
SSM3J15FU,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 0.1A USM

Package: SC-70, SOT-323

Stock6,080
IRFS7530-7PPBF
Infineon Technologies

MOSFET N CH 60V 240A D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock30,036
SCT3040KLGC11
Rohm Semiconductor

MOSFET NCH 1.2KV 55A TO247N

Package: TO-247-3

Stock16,116
BSS123Q-7
Diodes Incorporated

2N7002 FAMILY SOT23 T&R 3K

Package: -

Stock18,000
NTE2920
NTE Electronics, Inc

MOSFET N-CHANNEL 60V 70A TO3P

Package: -

Request a Quote
NVMFS016N10MCLT1G
onsemi

PTNG 100V LL SO8FL

Package: -

Stock1,989
FDP6035L
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRF540ZS	Infineon Technologies	MOSFET N-CH 100V 36A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,512	MOSFET (Metal Oxide)	100V	36A (Tc)	10V	4V @ 250µA	63nC @ 10V	1770pF @ 25V	±20V	-	92W (Tc)	26.5 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSS83PL6327HTSA1	Infineon Technologies	MOSFET P-CH 60V 0.33A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 3.57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 330mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,576	MOSFET (Metal Oxide)	60V	330mA (Ta)	4.5V, 10V	2V @ 80µA	3.57nC @ 10V	78pF @ 25V	±20V	-	360mW (Ta)	2 Ohm @ 330mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IRFS4610TRRPBF	Infineon Technologies	MOSFET N-CH 100V 73A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,448	MOSFET (Metal Oxide)	100V	73A (Tc)	10V	4V @ 100µA	140nC @ 10V	3550pF @ 50V	±20V	-	190W (Tc)	14 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
VN2222LLRLRAG	ON Semiconductor	MOSFET N-CH 60V 150MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock5,904	MOSFET (Metal Oxide)	60V	150mA (Ta)	10V	2.5V @ 1mA	-	60pF @ 25V	±20V	-	400mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
IRFPG40	Vishay Siliconix	MOSFET N-CH 1000V 4.3A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock104,100	MOSFET (Metal Oxide)	1000V	4.3A (Tc)	10V	4V @ 250µA	120nC @ 10V	1600pF @ 25V	±20V	-	150W (Tc)	3.5 Ohm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRF3205ZLPBF	Infineon Technologies	MOSFET N-CH 55V 75A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock269,088	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	110nC @ 10V	3450pF @ 25V	±20V	-	170W (Tc)	6.5 mOhm @ 66A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IXFE44N60	IXYS	MOSFET N-CH 600V 41A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 41A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,656	MOSFET (Metal Oxide)	600V	41A	10V	4.5V @ 8mA	330nC @ 10V	8900pF @ 25V	±20V	-	500W (Tc)	130 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IRFI9610GPBF	Vishay Siliconix	MOSFET P-CH 200V 2A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock23,160	MOSFET (Metal Oxide)	200V	2A (Tc)	10V	4V @ 250µA	13nC @ 10V	180pF @ 25V	±20V	-	27W (Tc)	3 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
AOTF474	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 75V 9A TO220FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3370pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 57.5W (Tc) Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FL Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,824	MOSFET (Metal Oxide)	75V	9A (Ta), 47A (Tc)	10V	4V @ 250µA	60nC @ 10V	3370pF @ 30V	±20V	-	1.9W (Ta), 57.5W (Tc)	11.3 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FL	TO-220-3 Full Pack
IRLU120NPBF	Infineon Technologies	MOSFET N-CH 100V 10A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 185 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock25,548	MOSFET (Metal Oxide)	100V	10A (Tc)	4V, 10V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±16V	-	48W (Tc)	185 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IPD65R380C6BTMA1	Infineon Technologies	MOSFET N-CH 650V 10.6A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,216	MOSFET (Metal Oxide)	650V	10.6A (Tc)	10V	3.5V @ 320µA	39nC @ 10V	710pF @ 100V	±20V	-	83W (Tc)	380 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
STL7N10F7	STMicroelectronics	MOSFET N-CH 100V 7A 8POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,776	MOSFET (Metal Oxide)	100V	-	10V	4.5V @ 250µA	14nC @ 10V	920pF @ 50V	±20V	-	2.9W (Ta), 50W (Tc)	35 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
CZDM1003N TR	Central Semiconductor Corp	MOSFET N-CH 100V 3A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 25V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock19,224	MOSFET (Metal Oxide)	100V	3A (Ta)	10V	4V @ 250µA	15nC @ 10V	975pF @ 25V	20V	-	2W (Ta)	150 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SSM3J15FU,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 0.1A USM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock6,080	MOSFET (Metal Oxide)	30V	100mA (Ta)	2.5V, 4V	1.7V @ 100µA	-	9.1pF @ 3V	±20V	-	150mW (Ta)	12 Ohm @ 10mA, 4V	-55°C ~ 150°C (TJ)	Surface Mount	USM	SC-70, SOT-323
IRFS7530-7PPBF	Infineon Technologies	MOSFET N CH 60V 240A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 354nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12960pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock30,036	MOSFET (Metal Oxide)	60V	240A (Tc)	6V, 10V	3.7V @ 250µA	354nC @ 10V	12960pF @ 25V	±20V	-	375W (Tc)	1.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab)
SCT3040KLGC11	Rohm Semiconductor	MOSFET NCH 1.2KV 55A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 1337pF @ 800V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 262W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: TO-247-3	Stock16,116	SiCFET (Silicon Carbide)	1200V	55A (Tc)	18V	5.6V @ 10mA	107nC @ 18V	1337pF @ 800V	+22V, -4V	-	262W (Tc)	52 mOhm @ 20A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
BSS123Q-7	Diodes Incorporated	2N7002 FAMILY SOT23 T&R 3K FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock18,000	MOSFET (Metal Oxide)	100 V	170mA (Ta)	4.5V, 10V	2V @ 1mA	-	60 pF @ 25 V	±20V	-	300mW (Ta)	6Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NTE2920	NTE Electronics, Inc	MOSFET N-CHANNEL 60V 70A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 54A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	70A (Tc)	10V	4V @ 250µA	160 nC @ 10 V	4500 pF @ 25 V	±20V	-	230W (Tc)	14mOhm @ 54A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
NVMFS016N10MCLT1G	onsemi	PTNG 100V LL SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 64µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock1,989	MOSFET (Metal Oxide)	100 V	10.9A (Ta), 46A (Tc)	4.5V, 10V	3V @ 64µA	19 nC @ 10 V	1250 pF @ 50 V	±20V	-	3.6W (Ta), 64W (Tc)	14mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
FDP6035L	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	58A (Tc)	4.5V, 10V	3V @ 250µA	46 nC @ 10 V	1230 pF @ 15 V	±20V	-	75W (Tc)	11mOhm @ 26A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
MCH3420-TL-E	onsemi	MCH3420 - N-CHANNEL SILICON MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 250mA, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 3-MCPH Package / Case: 3-SMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	500mA (Ta)	4V, 10V	2.2V @ 1mA	3.2 nC @ 10 V	80 pF @ 20 V	±20V	-	800mW (Ta)	1.85mOhm @ 250mA, 10V	150°C	Surface Mount	3-MCPH	3-SMD, Flat Leads
SQ2360EES-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 4.4A TO236 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	4.4A (Tc)	-	2.5V @ 250µA	12 nC @ 10 V	370 pF @ 25 V	-	-	-	85mOhm @ 6A, 10V	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BSS123K-13	Diodes Incorporated	BSS FAMILY SOT23 T&R 10K FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	230mA (Ta)	4.5V, 10V	2V @ 1mA	1.3 nC @ 10 V	38 pF @ 50 V	±20V	-	500mW (Ta)	6Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SQJ446EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	65 nC @ 10 V	4220 pF @ 20 V	±20V	-	46W (Tc)	5mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
MSC360SMA120B	Microchip Technology	MOSFET SIC 1200 V 360 MOHM TO-24 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.14V @ 500µA (Typ) Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock414	SiCFET (Silicon Carbide)	1200 V	11A (Tc)	20V	3.14V @ 500µA (Typ)	21 nC @ 20 V	255 pF @ 1000 V	+23V, -10V	-	78W (Tc)	450mOhm @ 5A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
SSM6J424TU-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 6A UF6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Vgs (Max): +6V, -8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UF6 Package / Case: 6-SMD, Flat Leads	Package: -	Stock15,210	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.5V, 4.5V	1V @ 1mA	23.1 nC @ 4.5 V	1650 pF @ 10 V	+6V, -8V	-	1W (Ta)	22.5mOhm @ 6A, 4.5V	150°C	Surface Mount	UF6	6-SMD, Flat Leads
PMV28ENER	Nexperia USA Inc.	PMV28ENE/SOT23/TO-236AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 660mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock15,582	MOSFET (Metal Oxide)	30 V	4.4A (Ta)	4.5V, 10V	2.5V @ 250µA	8 nC @ 10 V	266 pF @ 15 V	±20V	-	660mW (Ta), 8.3W (Tc)	37mOhm @ 4.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
SI4108DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 75V 20.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 38 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13.8A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	75 V	20.5A (Tc)	-	4V @ 250µA	54 nC @ 10 V	2100 pF @ 38 V	-	-	-	9.8mOhm @ 13.8A, 10V	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)