Page 1147 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

94-2335
Infineon Technologies

MOSFET N-CH 55V 28A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,376
AOD4158
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 17A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock39,996
AO4407BL
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 12A 8SOIC

Package: -

Stock7,152
JANTX2N6770
Microsemi Corporation

MOSFET N-CH TO-204AE TO-3

Package: TO-204AE

Stock7,216
NTD4959NH-1G
ON Semiconductor

MOSFET N-CH 30V 9A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,792
NTD4804NA-35G
ON Semiconductor

MOSFET N-CH 30V 14.5A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock7,312
NTR4501NT3
ON Semiconductor

MOSFET N-CH 20V 3.2A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,368
BUK7507-30B,127
Nexperia USA Inc.

MOSFET N-CH 30V 75A TO220AB

Package: TO-220-3

Stock6,416
HUFA75329D3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,800
BSO080P03NS3GXUMA1
Infineon Technologies

MOSFET P-CH 30V 12A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,528
IRFR024TRLPBF
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,920
RSY200N05TL
Rohm Semiconductor

MOSFET N-CH 45V 20A TCPT3

Package: 3-SMD, Flat Leads

Stock7,600
NTMFS4847NAT3G
ON Semiconductor

MOSFET N-CH 30V 11.5A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,320
DMP3028LK3Q-13
Diodes Incorporated

MOSFET BVDSS: 25V 30V TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,104
PMN42XPE,115
Nexperia USA Inc.

MOSFET P-CH 20V 4A 6TSOP

Package: SC-74, SOT-457

Stock103,800
FQB7P20TM_F085
Fairchild/ON Semiconductor

MOSFET P-CH 200V 7.3A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,216
APT30F50B
Microsemi Corporation

MOSFET N-CH 500V 30A TO-247

Package: TO-247-3

Stock7,248
SIHA15N50E-E3
Vishay Siliconix

MOSFET N-CH 500V 14.5A TO-220FP

Package: TO-220-3 Full Pack

Stock19,602
SI1400DL-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 1.6A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock278,040
FDMS2672
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.7A POWER56

Package: 8-PowerWDFN

Stock93,384

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
94-2335	Infineon Technologies	MOSFET N-CH 55V 28A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,376	MOSFET (Metal Oxide)	55V	28A (Tc)	4V, 10V	2V @ 250µA	25nC @ 5V	880pF @ 25V	±16V	-	68W (Tc)	40 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AOD4158	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 17A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 46A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock39,996	MOSFET (Metal Oxide)	30V	46A	10V	2.4V @ 250µA	18nC @ 10V	1500pF @ 15V	±20V	-	32W (Tc)	9 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	-	TO-252-3, DPak (2 Leads + Tab), SC-63
AO4407BL	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 12A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 12A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	Package: -	Stock7,152	MOSFET (Metal Oxide)	30V	12A (Ta)	10V	2.8V @ 250µA	36nC @ 10V	2600pF @ 15V	±25V	-	3.1W (Ta)	13 mOhm @ 12A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	-	-
JANTX2N6770	Microsemi Corporation	MOSFET N-CH TO-204AE TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	Package: TO-204AE	Stock7,216	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	120nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	500 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AE
NTD4959NH-1G	ON Semiconductor	MOSFET N-CH 30V 9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2155pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,792	MOSFET (Metal Oxide)	30V	9A (Ta), 58A (Tc)	4.5V, 11.5V	2.5V @ 250µA	44nC @ 11.5V	2155pF @ 12V	±20V	-	1.3W (Ta), 52W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD4804NA-35G	ON Semiconductor	MOSFET N-CH 30V 14.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock7,312	MOSFET (Metal Oxide)	30V	14.5A (Ta), 124A (Tc)	4.5V, 11.5V	2.5V @ 250µA	40nC @ 4.5V	4490pF @ 12V	±20V	-	1.43W (Ta), 93.75W (Tc)	4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTR4501NT3	ON Semiconductor	MOSFET N-CH 20V 3.2A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Tj) Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,368	MOSFET (Metal Oxide)	20V	3.2A (Ta)	1.8V, 4.5V	1.2V @ 250µA	6nC @ 4.5V	200pF @ 10V	±12V	-	1.25W (Tj)	80 mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BUK7507-30B,127	Nexperia USA Inc.	MOSFET N-CH 30V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2427pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,416	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	4V @ 1mA	36nC @ 10V	2427pF @ 25V	±20V	-	157W (Tc)	7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
HUFA75329D3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,800	MOSFET (Metal Oxide)	55V	20A (Tc)	10V	4V @ 250µA	65nC @ 20V	1060pF @ 25V	±20V	-	128W (Tc)	26 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
BSO080P03NS3GXUMA1	Infineon Technologies	MOSFET P-CH 30V 12A 8DSO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.1V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6750pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,528	MOSFET (Metal Oxide)	30V	12A (Ta)	6V, 10V	3.1V @ 150µA	81nC @ 10V	6750pF @ 15V	±25V	-	1.6W (Ta)	8 mOhm @ 14.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
IRFR024TRLPBF	Vishay Siliconix	MOSFET N-CH 60V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,920	MOSFET (Metal Oxide)	60V	14A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	100 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
RSY200N05TL	Rohm Semiconductor	MOSFET N-CH 45V 20A TCPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Ta) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TCPT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock7,600	MOSFET (Metal Oxide)	45V	20A (Ta)	4.5V, 10V	-	-	-	±20V	-	20W (Ta)	-	150°C (TJ)	Surface Mount	TCPT3	3-SMD, Flat Leads
NTMFS4847NAT3G	ON Semiconductor	MOSFET N-CH 30V 11.5A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 880mW (Ta), 48.4W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,320	MOSFET (Metal Oxide)	30V	11.5A (Ta), 85A (Tc)	4.5V, 11.5V	2.5V @ 250µA	28nC @ 4.5V	2614pF @ 12V	±16V	-	880mW (Ta), 48.4W (Tc)	4.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
DMP3028LK3Q-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,104	MOSFET (Metal Oxide)	30V	27A (Tc)	4.5V, 10V	2.4V @ 250µA	22nC @ 10V	1241pF @ 15V	±20V	-	2.8W (Ta)	25 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
PMN42XPE,115	Nexperia USA Inc.	MOSFET P-CH 20V 4A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock103,800	MOSFET (Metal Oxide)	20V	4A (Ta)	2.5V, 4.5V	1.25V @ 250µA	17.3nC @ 4.5V	1410pF @ 10V	±12V	-	500mW (Ta), 8.33W (Tc)	46 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
FQB7P20TM_F085	Fairchild/ON Semiconductor	MOSFET P-CH 200V 7.3A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 690 mOhm @ 3.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,216	MOSFET (Metal Oxide)	200V	7.3A (Tc)	10V	5V @ 250µA	25nC @ 10V	770pF @ 25V	±30V	-	3.13W (Ta), 90W (Tc)	690 mOhm @ 3.65A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT30F50B	Microsemi Corporation	MOSFET N-CH 500V 30A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4525pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 415W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock7,248	MOSFET (Metal Oxide)	500V	30A (Tc)	10V	5V @ 1mA	115nC @ 10V	4525pF @ 25V	±30V	-	415W (Tc)	190 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
SIHA15N50E-E3	Vishay Siliconix	MOSFET N-CH 500V 14.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1162pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock19,602	MOSFET (Metal Oxide)	500V	14.5A (Tc)	10V	4V @ 250µA	66nC @ 10V	1162pF @ 100V	±30V	-	33W (Tc)	280 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SI1400DL-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 1.6A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock278,040	MOSFET (Metal Oxide)	20V	1.6A (Ta)	2.5V, 4.5V	600mV @ 250µA (Min)	4nC @ 4.5V	-	±12V	-	568mW (Ta)	150 mOhm @ 1.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6 (SOT-363)	6-TSSOP, SC-88, SOT-363
FDMS2672	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.7A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2315pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock93,384	MOSFET (Metal Oxide)	200V	3.7A (Ta), 20A (Tc)	6V, 10V	4V @ 250µA	42nC @ 10V	2315pF @ 100V	±20V	-	2.5W (Ta), 78W (Tc)	77 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerWDFN
FDD5614P	Fairchild/ON Semiconductor	MOSFET P-CH 60V 15A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 759pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock759,972	MOSFET (Metal Oxide)	60V	15A (Ta)	4.5V, 10V	3V @ 250µA	24nC @ 10V	759pF @ 30V	±20V	-	3.8W (Ta), 42W (Tc)	100 mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
2N7002KL3-TP	Micro Commercial Co	N-CHANNEL MOSFET DFN1006-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100mW Rds On (Max) @ Id, Vgs: 1.5Ohm @ 40mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: -	Stock29,040	MOSFET (Metal Oxide)	60 V	410mA (Ta)	4.5V, 10V	2.3V @ 250µA	2.8 nC @ 10 V	80 pF @ 40 V	±20V	-	100mW	1.5Ohm @ 40mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
GSFN3906	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 60A, 30V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PPAK (3.1x3.05) Package / Case: 8-PowerVDFN	Package: -	Stock17,820	MOSFET (Metal Oxide)	30 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	18 nC @ 4.5 V	1800 pF @ 25 V	±20V	-	45W (Tc)	6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PPAK (3.1x3.05)	8-PowerVDFN
STFU9N65M2	STMicroelectronics	MOSFET N-CH 650V 5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	5A (Tc)	10V	4V @ 250µA	10 nC @ 10 V	315 pF @ 100 V	±25V	-	20W (Tc)	900mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
CP373-CMPDM303NH-WN	Central Semiconductor Corp	MOSFET N-CH 30V 3.6A DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V Vgs (Max): 12V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 2.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	3.6A (Ta)	2.5V, 4.5V	1.2V @ 250µA	13 nC @ 4.5 V	590 pF @ 10 V	12V	-	-	78mOhm @ 1.8A, 2.5V	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
GNP1150TCA-ZE2	Rohm Semiconductor	ECOGAN, 650V 11A DFN8080AK, E-MO FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V Vgs(th) (Max) @ Id: 2.4V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V Vgs (Max): +6V, -10V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN8080AK Package / Case: 8-PowerDFN	Package: -	Stock9,153	GaNFET (Gallium Nitride)	650 V	11A (Tc)	5V, 5.5V	2.4V @ 18mA	2.7 nC @ 6 V	112 pF @ 400 V	+6V, -10V	-	62.5W (Tc)	195mOhm @ 1.9A, 5.5V	150°C (TJ)	Surface Mount	DFN8080AK	8-PowerDFN
RJL5013DPP-00-T2	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN601TKQ-7	Diodes Incorporated	2N7002 FAMILY SOT523 T&R 3K FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 343mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.04 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	343mA (Ta)	5V, 10V	2.5V @ 1mA	1.04 nC @ 10 V	41 pF @ 30 V	±20V	-	400mW (Ta)	2Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523