Page 1152 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6665TR1
Infineon Technologies

MOSFET N-CH 100V DIRECTFET-SH

Package: DirectFET? Isometric SH

Stock5,440
IPB45N06S4L08ATMA1
Infineon Technologies

MOSFET N-CH 60V 45A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,424
IRL3714SPBF
Infineon Technologies

MOSFET N-CH 20V 36A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,548
2SK4093TZ-E
Renesas Electronics America

MOSFET N-CH 250V 1A TO-92

Package: TO-226-3, TO-92-3 Long Body

Stock2,688
NTMS5838NLR2G
ON Semiconductor

MOSFET N-CH 40V 7.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock465,648
BUK9107-55ATE,118
Nexperia USA Inc.

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

Stock4,320
IRF737LCPBF
Vishay Siliconix

MOSFET N-CH 300V 6.1A TO-220AB

Package: TO-220-3

Stock6,912
FA38SA50LC
Vishay Semiconductor Diodes Division

MOSFET N-CH 500V 38A SOT-227

Package: SOT-227-4, miniBLOC

Stock6,960
IPG20N04S409ATMA1
Infineon Technologies

MOSFET N-CHANNEL_30/40V

Package: -

Stock3,728
IXTK140N20P
IXYS

MOSFET N-CH 200V 140A TO-264

Package: TO-264-3, TO-264AA

Stock7,536
IPU80R2K4P7AKMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO251-3

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,448
AOL1404
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 18A 8ULTRASO

Package: 3-PowerSMD, Flat Leads

Stock7,696
IXFH26N60P
IXYS

MOSFET N-CH 600V 26A TO-247

Package: TO-247-3

Stock4,752
STB45NF06T4
STMicroelectronics

MOSFET N-CH 60V 38A D2PAK

Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Stock44,748
AOD3N80
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 800V 2.8A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,872
SIHP25N60EFL-GE3
Vishay Siliconix

MOSFET N-CH 600V 25A TO220AB

Package: TO-220-3

Stock23,964
RSF010P03TL
Rohm Semiconductor

MOSFET P-CH 30V 1A TUMT3

Package: 3-SMD, Flat Leads

Stock24,996
SI2316BDS-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 4.5A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock872,412
NTE2373
NTE Electronics, Inc

MOSFET P-CHANNEL 200V 11A TO220

Package: -

Request a Quote
IRFC230NB
Infineon Technologies

MOSFET 200V 9.3A DIE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6665TR1	Infineon Technologies	MOSFET N-CH 100V DIRECTFET-SH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SH Package / Case: DirectFET? Isometric SH	Package: DirectFET? Isometric SH	Stock5,440	MOSFET (Metal Oxide)	100V	4.2A (Ta), 19A (Tc)	10V	5V @ 250µA	13nC @ 10V	530pF @ 25V	±20V	-	2.2W (Ta), 42W (Tc)	62 mOhm @ 5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SH	DirectFET? Isometric SH
IPB45N06S4L08ATMA1	Infineon Technologies	MOSFET N-CH 60V 45A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,424	MOSFET (Metal Oxide)	60V	45A (Tc)	4.5V, 10V	2.2V @ 35µA	64nC @ 10V	4780pF @ 25V	±16V	-	71W (Tc)	7.9 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3714SPBF	Infineon Technologies	MOSFET N-CH 20V 36A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,548	MOSFET (Metal Oxide)	20V	36A (Tc)	4.5V, 10V	3V @ 250µA	9.7nC @ 4.5V	670pF @ 10V	±20V	-	47W (Tc)	20 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SK4093TZ-E	Renesas Electronics America	MOSFET N-CH 250V 1A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92MOD Package / Case: TO-226-3, TO-92-3 Long Body	Package: TO-226-3, TO-92-3 Long Body	Stock2,688	MOSFET (Metal Oxide)	250V	1A (Ta)	2.5V, 4V	-	5.5nC @ 4V	140pF @ 25V	±10V	-	900mW (Ta)	2.6 Ohm @ 500mA, 4V	150°C (TJ)	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
NTMS5838NLR2G	ON Semiconductor	MOSFET N-CH 40V 7.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock465,648	MOSFET (Metal Oxide)	40V	5.8A (Ta)	4.5V, 10V	3V @ 250µA	17nC @ 10V	785pF @ 20V	±20V	-	1.5W (Ta)	25 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
BUK9107-55ATE,118	Nexperia USA Inc.	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5836pF @ 25V Vgs (Max): ±15V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-426 Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	Stock4,320	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	108nC @ 5V	5836pF @ 25V	±15V	Temperature Sensing Diode	272W (Tc)	6.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-426	TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
IRF737LCPBF	Vishay Siliconix	MOSFET N-CH 300V 6.1A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,912	MOSFET (Metal Oxide)	300V	6.1A (Tc)	10V	4V @ 250µA	17nC @ 10V	430pF @ 25V	±30V	-	74W (Tc)	750 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FA38SA50LC	Vishay Semiconductor Diodes Division	MOSFET N-CH 500V 38A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 38A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,960	MOSFET (Metal Oxide)	500V	38A	10V	4V @ 250µA	420nC @ 10V	6900pF @ 25V	±20V	-	500W (Tc)	130 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IPG20N04S409ATMA1	Infineon Technologies	MOSFET N-CHANNEL_30/40V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,728	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTK140N20P	IXYS	MOSFET N-CH 200V 140A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,536	MOSFET (Metal Oxide)	200V	140A (Tc)	10V	5V @ 500µA	240nC @ 10V	7500pF @ 25V	±20V	-	800W (Tc)	18 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IPU80R2K4P7AKMA1	Infineon Technologies	MOSFET N-CH 800V COOLMOS TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 500V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 22W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,448	MOSFET (Metal Oxide)	800V	2.5A (Tc)	10V	3.5V @ 40µA	7.5nC @ 10V	150pF @ 500V	±20V	-	22W (Tc)	2.4 Ohm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
AOL1404	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 20V 18A 8ULTRASO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4630pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UltraSO-8? Package / Case: 3-PowerSMD, Flat Leads	Package: 3-PowerSMD, Flat Leads	Stock7,696	MOSFET (Metal Oxide)	20V	18A (Ta), 45A (Tc)	2.5V, 4.5V	1.6V @ 250µA	43nC @ 10V	4630pF @ 10V	±12V	-	2.1W (Ta), 60W (Tc)	4 mOhm @ 20A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	UltraSO-8?	3-PowerSMD, Flat Leads
IXFH26N60P	IXYS	MOSFET N-CH 600V 26A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,752	MOSFET (Metal Oxide)	600V	26A (Tc)	10V	5V @ 4mA	72nC @ 10V	4150pF @ 25V	±30V	-	460W (Tc)	270 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
STB45NF06T4	STMicroelectronics	MOSFET N-CH 60V 38A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 19A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	Stock44,748	MOSFET (Metal Oxide)	60V	38A (Tc)	10V	4V @ 250µA	58nC @ 10V	980pF @ 25V	±20V	-	80W (Tc)	28 mOhm @ 19A, 10V	175°C (TJ)	Surface Mount	D2PAK	TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
AOD3N80	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 800V 2.8A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,872	MOSFET (Metal Oxide)	800V	2.8A (Tc)	10V	4.5V @ 250µA	10nC @ 10V	510pF @ 25V	±30V	-	83W (Tc)	4.8 Ohm @ 1.5A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SIHP25N60EFL-GE3	Vishay Siliconix	MOSFET N-CH 600V 25A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2274pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 146 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock23,964	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	5V @ 250µA	75nC @ 10V	2274pF @ 100V	±30V	-	250W (Tc)	146 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
RSF010P03TL	Rohm Semiconductor	MOSFET P-CH 30V 1A TUMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock24,996	MOSFET (Metal Oxide)	30V	1A (Ta)	4V, 10V	-	1.9nC @ 5V	120pF @ 10V	±20V	-	800mW (Ta)	350 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
SI2316BDS-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 4.5A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock872,412	MOSFET (Metal Oxide)	30V	4.5A (Tc)	4.5V, 10V	3V @ 250µA	9.6nC @ 10V	350pF @ 15V	±20V	-	1.25W (Ta), 1.66W (Tc)	50 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTE2373	NTE Electronics, Inc	MOSFET P-CHANNEL 200V 11A TO220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	11A (Tc)	10V	4V @ 250µA	44 nC @ 10 V	1200 pF @ 25 V	±20V	-	125W (Tc)	500mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IRFC230NB	Infineon Technologies	MOSFET 200V 9.3A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 9.3A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 300mOhm @ 9.3A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	9.3A	-	-	-	-	-	-	-	300mOhm @ 9.3A, 10V	-	Surface Mount	Die	Die
PXP012-30QLJ	Nexperia USA Inc.	P-CHANNEL TRENCH MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 38.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MLPAK33 Package / Case: 8-PowerVDFN	Package: -	Stock19,203	MOSFET (Metal Oxide)	30 V	8.9A (Ta), 38.8A (Tc)	4.5V, 10V	2V @ 250µA	43.4 nC @ 10 V	1400 pF @ 15 V	±25V	-	1.7W (Ta), 32W (Tc)	12.8mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	MLPAK33	8-PowerVDFN
MCAC60N10Y-TP	Micro Commercial Co	N-CHANNEL MOSFET,DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 60A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2431 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tj) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock53,091	MOSFET (Metal Oxide)	100 V	60A	10V	3.4V @ 250µA	32 nC @ 10 V	2431 pF @ 50 V	±20V	-	88W (Tj)	8.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
PSMN6R7-40MSDX	Nexperia USA Inc.	MOSFET N-CH 40V 50A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Ta) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: -	Stock17,994	MOSFET (Metal Oxide)	40 V	50A (Ta)	10V	3.6V @ 1mA	22 nC @ 10 V	1642 pF @ 20 V	±20V	-	65W (Ta)	6.7mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
TP65H300G4LSG-TR	Transphorm	GANFET N-CH 650V 6.5A 3PQFN FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 21W (Tc) Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerDFN	Package: -	Stock19,521	GaNFET (Gallium Nitride)	650 V	6.5A (Tc)	8V	2.6V @ 500µA	9.6 nC @ 8 V	760 pF @ 400 V	±18V	-	21W (Tc)	312mOhm @ 5A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	3-PQFN (8x8)	3-PowerDFN
PJD85N03-AU_L2_000A1	Panjit International Inc.	30V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2436 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 58W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	16A (Ta), 85A (Tc)	4.5V, 10V	2.5V @ 250µA	23 nC @ 4.5 V	2436 pF @ 25 V	±20V	-	2W (Ta), 58W (Tc)	3.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
IMW65R039M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET, PG-TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V Vgs (Max): +20V, -2V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	Package: -	Stock816	SiCFET (Silicon Carbide)	650 V	46A (Tc)	18V	5.7V @ 7.5mA	41 nC @ 18 V	1393 pF @ 400 V	+20V, -2V	-	176W (Tc)	50mOhm @ 25A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
EPC2302	EPC	TRANS GAN 100V DIE .0018OHM FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 101A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 14mA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 7-QFN (3x5) Package / Case: 7-PowerWQFN	Package: -	Stock134,406	GaNFET (Gallium Nitride)	100 V	101A (Ta)	5V	2.5V @ 14mA	23 nC @ 5 V	3200 pF @ 50 V	+6V, -4V	-	-	1.8mOhm @ 50A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	7-QFN (3x5)	7-PowerWQFN
SIRS4600DP-T1-RE3	Vishay Siliconix	N-CHANNEL 60 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 334A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7655 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.4W (Ta), 240W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock12	MOSFET (Metal Oxide)	60 V	58A (Ta), 334A (Tc)	7.5V, 10V	4V @ 250µA	162 nC @ 10 V	7655 pF @ 30 V	±20V	-	7.4W (Ta), 240W (Tc)	1.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8