Page 1150 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR014NTRR
Infineon Technologies

MOSFET N-CH 55V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,608
IXFC20N80P
IXYS

MOSFET N-CH 800V 11A ISOPLUS220

Package: ISOPLUS220?

Stock7,392
FDT461N
Fairchild/ON Semiconductor

MOSFET N-CH 100V 0.54A SOT-223

Package: TO-261-4, TO-261AA

Stock132,000
STB13NM50N
STMicroelectronics

MOSFET N-CH 500V 12A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,064
FDMS8350LET40
Fairchild/ON Semiconductor

PT8 40V/20V NCH POWERTRENCH MOSF

Package: 8-PowerTDFN

Stock5,824
SIHG22N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 22A TO-247AC

Package: TO-247-3

Stock6,944
DMG1013T-7
Diodes Incorporated

MOSFET P-CH 20V 0.46A SOT-523

Package: SOT-523

Stock116,688
STL16N60M2
STMicroelectronics

MOSFET N-CH 600V 8A POWERFLAT

Package: 8-PowerVDFN

Stock3,216
SI4463BDY-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 9.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock527,544
STB32N65M5
STMicroelectronics

MOSFET N-CH 650V 24A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,040
IRF2807PBF
Infineon Technologies

MOSFET N-CH 75V 82A TO-220AB

Package: TO-220-3

Stock1,903,092
IRFP9240PBF
Vishay Siliconix

MOSFET P-CH 200V 12A TO-247AC

Package: TO-247-3

Stock9,744
SI2399DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 6A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock1,285,128
BSS123,215
Nexperia USA Inc.

MOSFET N-CH 100V 150MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock110,766
C3M0065090J
Cree/Wolfspeed

MOSFET N-CH 900V 35A D2PAK-7

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock62,232
STD2HNK60Z
STMicroelectronics

MOSFET N-CH 600V 2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock806,388
NP161N04TUG-E1-AY
Renesas Electronics Corporation

MOSFET N-CH 40V 160A TO263-7

Package: -

Request a Quote
FCP11N60N-F102
onsemi

MOSFET N-CH 600V 10.8A TO220F

Package: -

Request a Quote
N0300P-T1B-AT
Renesas Electronics Corporation

SIGNAL DEVICE

Package: -

Request a Quote
IPD90P03P4L04ATMA2
Infineon Technologies

MOSFET P-CH 30V 90A TO252-31

Package: -

Stock19,005

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR014NTRR	Infineon Technologies	MOSFET N-CH 55V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,608	MOSFET (Metal Oxide)	55V	10A (Tc)	4.5V, 10V	1V @ 250µA	7.9nC @ 5V	265pF @ 25V	±16V	-	28W (Tc)	140 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFC20N80P	IXYS	MOSFET N-CH 800V 11A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock7,392	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	5V @ 4mA	85nC @ 10V	4680pF @ 25V	±30V	-	166W (Tc)	500 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
FDT461N	Fairchild/ON Semiconductor	MOSFET N-CH 100V 0.54A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 74pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.13W (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 540mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock132,000	MOSFET (Metal Oxide)	100V	540mA (Ta)	4.5V, 10V	2V @ 250µA	4nC @ 10V	74pF @ 25V	±20V	-	1.13W (Ta)	2 Ohm @ 540mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
STB13NM50N	STMicroelectronics	MOSFET N-CH 500V 12A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,064	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 250µA	30nC @ 10V	960pF @ 50V	±25V	-	100W (Tc)	320 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS8350LET40	Fairchild/ON Semiconductor	PT8 40V/20V NCH POWERTRENCH MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 219nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16590pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.33W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.85 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,824	MOSFET (Metal Oxide)	40V	49A (Ta), 300A (Tc)	4.5V, 10V	3V @ 250µA	219nC @ 10V	16590pF @ 20V	±20V	-	3.33W (Ta), 125W (Tc)	0.85 mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
SIHG22N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 22A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock6,944	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	4V @ 250µA	110nC @ 10V	2415pF @ 100V	±30V	-	227W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
DMG1013T-7	Diodes Incorporated	MOSFET P-CH 20V 0.46A SOT-523 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 700 mOhm @ 350mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: SOT-523	Stock116,688	MOSFET (Metal Oxide)	20V	460mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.622nC @ 4.5V	59.76pF @ 16V	±6V	-	270mW (Ta)	700 mOhm @ 350mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
STL16N60M2	STMicroelectronics	MOSFET N-CH 600V 8A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 704pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 355 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,216	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	4V @ 250µA	19nC @ 10V	704pF @ 100V	±25V	-	52W (Tc)	355 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
SI4463BDY-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 9.8A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 13.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock527,544	MOSFET (Metal Oxide)	20V	9.8A (Ta)	2.5V, 10V	1.4V @ 250µA	56nC @ 4.5V	-	±12V	-	1.5W (Ta)	11 mOhm @ 13.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STB32N65M5	STMicroelectronics	MOSFET N-CH 650V 24A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 119 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,040	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	5V @ 250µA	72nC @ 10V	3320pF @ 100V	±25V	-	150W (Tc)	119 mOhm @ 12A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2807PBF	Infineon Technologies	MOSFET N-CH 75V 82A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock1,903,092	MOSFET (Metal Oxide)	75V	82A (Tc)	10V	4V @ 250µA	160nC @ 10V	3820pF @ 25V	±20V	-	230W (Tc)	13 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFP9240PBF	Vishay Siliconix	MOSFET P-CH 200V 12A TO-247AC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock9,744	MOSFET (Metal Oxide)	200V	12A (Tc)	10V	4V @ 250µA	44nC @ 10V	1200pF @ 25V	±20V	-	150W (Tc)	500 mOhm @ 7.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SI2399DS-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 6A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 835pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,285,128	MOSFET (Metal Oxide)	20V	6A (Tc)	2.5V, 10V	1.5V @ 250µA	20nC @ 4.5V	835pF @ 10V	±12V	-	1.25W (Ta), 2.5W (Tc)	34 mOhm @ 5.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BSS123,215	Nexperia USA Inc.	MOSFET N-CH 100V 150MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 120mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock110,766	MOSFET (Metal Oxide)	100V	150mA (Ta)	10V	2.8V @ 1mA	-	40pF @ 25V	±20V	-	250mW (Ta)	6 Ohm @ 120mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
C3M0065090J	Cree/Wolfspeed	MOSFET N-CH 900V 35A D2PAK-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock62,232	SiCFET (Silicon Carbide)	900V	35A (Tc)	15V	2.1V @ 5mA	30nC @ 15V	660pF @ 600V	+19V, -8V	-	113W (Tc)	78 mOhm @ 20A, 15V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
STD2HNK60Z	STMicroelectronics	MOSFET N-CH 600V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock806,388	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4.5V @ 50µA	15nC @ 10V	280pF @ 25V	±30V	-	45W (Tc)	4.8 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NP161N04TUG-E1-AY	Renesas Electronics Corporation	MOSFET N-CH 40V 160A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20250 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	160A (Tc)	-	4V @ 250µA	345 nC @ 10 V	20250 pF @ 25 V	-	-	1.8W (Ta), 250W (Tc)	1.8mOhm @ 80A, 10V	175°C (TJ)	Surface Mount	TO-263-7	TO-263-7, D2PAK (6 Leads + Tab)
FCP11N60N-F102	onsemi	MOSFET N-CH 600V 10.8A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	10.8A (Tc)	10V	4V @ 250µA	35.6 nC @ 10 V	1505 pF @ 100 V	±30V	-	94W (Tc)	299mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
N0300P-T1B-AT	Renesas Electronics Corporation	SIGNAL DEVICE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	4.5A (Tj)	-	-	-	-	-	-	-	-	-	-	-	-
IPD90P03P4L04ATMA2	Infineon Technologies	MOSFET P-CH 30V 90A TO252-31 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock19,005	MOSFET (Metal Oxide)	30 V	90A (Tc)	-	2V @ 253µA	160 nC @ 10 V	11300 pF @ 25 V	+5V, -16V	-	137W (Tc)	4.1mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
STO68N65DM6	STMicroelectronics	N-CHANNEL 650 V, 53 MOHM TYP., 5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3528 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 27.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLL (HV) Package / Case: 8-PowerSFN	Package: -	Stock711	MOSFET (Metal Oxide)	650 V	55A (Tc)	10V	4.75V @ 250µA	80 nC @ 10 V	3528 pF @ 100 V	±25V	-	240W (Tc)	65mOhm @ 27.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TOLL (HV)	8-PowerSFN
SUD90330E-GE3	Vishay Siliconix	MOSFET N-CH 200V 35.8A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	35.8A (Tc)	7.5V, 10V	4V @ 250µA	32 nC @ 10 V	1172 pF @ 100 V	±20V	-	125W (Tc)	37.5mOhm @ 12.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJD60N04-AU_L2_000A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	12.7A (Ta), 60A (Tc)	4.5V, 10V	2.5V @ 250µA	17 nC @ 4.5 V	1759 pF @ 25 V	±20V	-	2.4W (Ta), 75W (Tc)	6.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRLML6246TRPBF-ML	MOSLEADER	N 20V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCU18N10-TP	Micro Commercial Co	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	18A (Tc)	10V	3V @ 250µA	26.8 nC @ 10 V	1380 pF @ 50 V	±20V	-	47W	46mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRLML6401GPBF-ML	MOSLEADER	P -12V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MTD5N25ET4	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK1591-T2B-A	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-