Page 1172 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI80N04S2H4AKSA1
Infineon Technologies

MOSFET N-CH 40V 80A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,520
APT4016BVRG
Microsemi Corporation

MOSFET N-CH 400V TO-247

Package: -

Stock3,088
PML340SN,118
Nexperia USA Inc.

MOSFET N-CH 220V 7.3A 8HVSON

Package: 8-VDFN Exposed Pad

Stock3,472
PSMN5R9-30YL,115
NXP

MOSFET N-CH 30V 78A LFPAK

Package: SC-100, SOT-669

Stock4,224
SI3424DV-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 5A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock483,012
SI3481DV-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 4A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock219,624
FQP9N50C
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9A TO-220

Package: TO-220-3

Stock27,888
2SK4094-1E
ON Semiconductor

MOSFET N-CH 60V 100A TO220-3

Package: TO-220-3

Stock828,000
NTMFS4H02NT1G
ON Semiconductor

MOSFET N-CH 25V 37A SO8FL

Package: 8-PowerTDFN

Stock2,096
ZVN4206GTC
Diodes Incorporated

MOSFET N-CH 60V 1A SOT223

Package: TO-261-4, TO-261AA

Stock134,088
DMN61D8LQ-13
Diodes Incorporated

MOSFET N-CH 60V SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,600
DMG3418L-13
Diodes Incorporated

MOSFET N-CH 30V 4A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,256
TSM8N50CP ROG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,992
IRFP450APBF
Vishay Siliconix

MOSFET N-CH 500V 14A TO-247AC

Package: TO-247-3

Stock7,408
IPB027N10N5ATMA1
Infineon Technologies

MOSFET N-CH 100V 120A D2PAK-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,736
NDB6030PL
Fairchild/ON Semiconductor

MOSFET P-CH 30V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock496,572
IRFD320PBF
Vishay Siliconix

MOSFET N-CH 400V 490MA 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock52,428
IRFR6215TRPBF
Infineon Technologies

MOSFET P-CH 150V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock194,760
IXFK120N20
IXYS

MOSFET N-CH 200V 120A TO-264AA

Package: TO-264-3, TO-264AA

Stock7,888
DMT15H017LPS-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V POWERDI5

Package: -

Stock5,028

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI80N04S2H4AKSA1	Infineon Technologies	MOSFET N-CH 40V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,520	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	148nC @ 10V	4400pF @ 25V	±20V	-	300W (Tc)	4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
APT4016BVRG	Microsemi Corporation	MOSFET N-CH 400V TO-247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,088	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PML340SN,118	Nexperia USA Inc.	MOSFET N-CH 220V 7.3A 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 220V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 656pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 386 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN3333 (3.3x3.3) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock3,472	MOSFET (Metal Oxide)	220V	7.3A (Tc)	6V, 10V	4V @ 1mA	13.2nC @ 10V	656pF @ 30V	±20V	-	50W (Tc)	386 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN3333 (3.3x3.3)	8-VDFN Exposed Pad
PSMN5R9-30YL,115	NXP	MOSFET N-CH 30V 78A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1226pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,224	MOSFET (Metal Oxide)	30V	78A (Tc)	4.5V, 10V	2.15V @ 1mA	21.3nC @ 10V	1226pF @ 15V	±20V	-	63W (Tc)	6.1 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SI3424DV-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 5A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock483,012	MOSFET (Metal Oxide)	30V	5A (Ta)	4.5V, 10V	800mV @ 250µA (Min)	18nC @ 10V	-	±20V	-	1.14W (Ta)	28 mOhm @ 6.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI3481DV-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 4A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock219,624	MOSFET (Metal Oxide)	30V	4A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	-	±20V	-	1.14W (Ta)	48 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
FQP9N50C	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock27,888	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	4V @ 250µA	35nC @ 10V	1030pF @ 25V	±30V	-	135W (Tc)	800 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
2SK4094-1E	ON Semiconductor	MOSFET N-CH 60V 100A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock828,000	MOSFET (Metal Oxide)	60V	100A (Ta)	4V, 10V	-	220nC @ 10V	12500pF @ 20V	±20V	-	1.75W (Ta), 90W (Tc)	5 mOhm @ 50A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
NTMFS4H02NT1G	ON Semiconductor	MOSFET N-CH 25V 37A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 193A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2651pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,096	MOSFET (Metal Oxide)	25V	37A (Ta), 193A (Tc)	4.5V, 10V	2.1V @ 250µA	38.5nC @ 10V	2651pF @ 12V	±20V	-	3.13W (Ta), 83W (Tc)	1.4 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
ZVN4206GTC	Diodes Incorporated	MOSFET N-CH 60V 1A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock134,088	MOSFET (Metal Oxide)	60V	1A (Ta)	5V, 10V	3V @ 1mA	-	100pF @ 25V	±20V	-	2W (Ta)	1 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
DMN61D8LQ-13	Diodes Incorporated	MOSFET N-CH 60V SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 390mW (Ta) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,600	MOSFET (Metal Oxide)	60V	470mA (Ta)	3V, 5V	2V @ 1mA	0.74nC @ 5V	12.9pF @ 12V	±12V	-	390mW (Ta)	1.8 Ohm @ 150mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
DMG3418L-13	Diodes Incorporated	MOSFET N-CH 30V 4A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 464.3pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,256	MOSFET (Metal Oxide)	30V	4A (Ta)	2.5V, 10V	1.5V @ 250µA	5.5nC @ 4.5V	464.3pF @ 15V	±12V	-	1.4W (Ta)	60 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
TSM8N50CP ROG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,992	MOSFET (Metal Oxide)	500V	7.2A (Tc)	10V	4V @ 250µA	26.6nC @ 10V	1595pF @ 25V	±30V	-	89W (Tc)	850 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFP450APBF	Vishay Siliconix	MOSFET N-CH 500V 14A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2038pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,408	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4V @ 250µA	64nC @ 10V	2038pF @ 25V	±30V	-	190W (Tc)	400 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPB027N10N5ATMA1	Infineon Technologies	MOSFET N-CH 100V 120A D2PAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 184µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,736	MOSFET (Metal Oxide)	100V	120A (Tc)	6V, 10V	3.8V @ 184µA	139nC @ 10V	10300pF @ 50V	±20V	-	250W (Tc)	2.7 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDB6030PL	Fairchild/ON Semiconductor	MOSFET P-CH 30V 30A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 19A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock496,572	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2V @ 250µA	36nC @ 5V	1570pF @ 15V	±16V	-	75W (Tc)	25 mOhm @ 19A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFD320PBF	Vishay Siliconix	MOSFET N-CH 400V 490MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 490mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 210mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock52,428	MOSFET (Metal Oxide)	400V	490mA (Ta)	10V	4V @ 250µA	20nC @ 10V	410pF @ 25V	±20V	-	1W (Ta)	1.8 Ohm @ 210mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFR6215TRPBF	Infineon Technologies	MOSFET P-CH 150V 13A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock194,760	MOSFET (Metal Oxide)	150V	13A (Tc)	10V	4V @ 250µA	66nC @ 10V	860pF @ 25V	±20V	-	110W (Tc)	295 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFK120N20	IXYS	MOSFET N-CH 200V 120A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,888	MOSFET (Metal Oxide)	200V	120A (Tc)	10V	4V @ 8mA	300nC @ 10V	9100pF @ 25V	±20V	-	560W (Tc)	17 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
DMT15H017LPS-13	Diodes Incorporated	MOSFET BVDSS: 101V~250V POWERDI5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Stock5,028	MOSFET (Metal Oxide)	150 V	9.4A (Ta), 58A (Tc)	4.5V, 10V	2.6V @ 250µA	50 nC @ 10 V	3369 pF @ 75 V	±20V	-	1.3W (Ta)	17.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
GSFD0460	Good-Ark Semiconductor	MOSFET, N-CH, 40V, TO-252 (DPAK) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock22,440	MOSFET (Metal Oxide)	40 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	32 nC @ 4.5 V	2500 pF @ 25 V	±20V	-	62W (Tc)	6.7mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIDR626DP-T1-RE3	Vishay Siliconix	N-CHANNEL 60-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Stock26,166	MOSFET (Metal Oxide)	60 V	42.8A (Ta), 100A (Tc)	6V, 10V	3.4V @ 250µA	102 nC @ 10 V	5130 pF @ 30 V	±20V	-	6.25W (Ta), 125W (Tc)	1.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
GC20N65F	Goford Semiconductor	MOSFET N-CH 650V 20A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	20A (Tc)	10V	4V @ 250µA	-	-	±30V	-	40W (Tc)	190mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
PJP10NA80_T0_00001	Panjit International Inc.	800V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1517 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	10A (Ta)	10V	4V @ 250µA	31 nC @ 10 V	1517 pF @ 25 V	±30V	-	180W (Tc)	1.15Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
PMV35EPE-ML	MOSLEADER	P -30V -5.3A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSS84K-TP	Micro Commercial Co	MOSFET P-CH 60V 130MA SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock63,000	MOSFET (Metal Oxide)	60 V	130mA (Ta)	4.5V, 10V	2.5V @ 250µA	-	30 pF @ 5 V	±20V	-	225mW	6Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SIHU6N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 5A TO251AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	5A (Tc)	10V	4V @ 250µA	22.5 nC @ 10 V	422 pF @ 100 V	±30V	-	62.5W (Tc)	950mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
SFR9214TM	Fairchild Semiconductor	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 1.53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 770mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	1.53A (Tc)	10V	4V @ 250µA	11 nC @ 10 V	295 pF @ 25 V	±30V	-	2.5W (Ta), 19W (Tc)	4Ohm @ 770mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63