Page 1173 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AOW418
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 9.5A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,960
AO6704
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 3.6A 6-TSOP

Package: SC-74, SOT-457

Stock842,052
IXFC96N15P
IXYS

MOSFET N-CH 150V 42A ISPLUS220

Package: ISOPLUS220?

Stock3,392
PMV20XN,215
NXP

MOSFET N-CH 30V 4.8A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock138,720
IXFL82N60P
IXYS

MOSFET N-CH 600V 55A ISOPLUS 264

Package: ISOPLUS264?

Stock7,424
EPC2021ENGR
EPC

TRANS GAN 80V 60A BUMPED DIE

Package: Die

Stock2,144
AOT288L
Alpha & Omega Semiconductor Inc.

MOSFET N CH 80V 10.5A TO220

Package: TO-220-3

Stock5,472
BUK9614-55A,118
Nexperia USA Inc.

MOSFET N-CH 55V 73A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,800
NTMFS4946NT1G
ON Semiconductor

MOSFET N-CH 30V SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock457,140
STW10N105K5
STMicroelectronics

MOSFET N-CH 1050V 6A TO-247

Package: TO-247-3

Stock3,056
STP80NF55-06FP
STMicroelectronics

MOSFET N-CH 55V 60A TO-220FP

Package: TO-220-3 Full Pack

Stock472,548
STD16N65M5
STMicroelectronics

MOSFET N-CH 650V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock19,032
FDC3512
Fairchild/ON Semiconductor

MOSFET N-CH 80V 3A SSOT-6

Package: SOT-23-6 Thin, TSOT-23-6

Stock329,124
FQD8P10TM_F085
Fairchild/ON Semiconductor

MOSFET P-CH 100V 6.6A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,408
CMLDM7120G TR
Central Semiconductor Corp

MOSFET N-CH 20V 1A SOT563

Package: SOT-563, SOT-666

Stock3,536
STU16N60M2
STMicroelectronics

MOSFET N-CH 600V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock26,502
FDMS2572
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.5A POWER56

Package: 8-PowerWDFN

Stock154,440
IXFK110N07
IXYS

MOSFET N-CH 70V 110A TO-264AA

Package: TO-264-3, TO-264AA

Stock103,464
DMN5L06WK-7
Diodes Incorporated

MOSFET N-CH 50V 300MA SC70-3

Package: SC-70, SOT-323

Stock673,992
SQJA88EP-T1_BE3
Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

Package: -

Stock9,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AOW418	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 9.5A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,960	MOSFET (Metal Oxide)	100V	9.5A (Ta), 105A (Tc)	7V, 10V	3.9V @ 250µA	83nC @ 10V	5200pF @ 50V	±25V	-	2.1W (Ta), 333W (Tc)	10 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
AO6704	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 3.6A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.39W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock842,052	MOSFET (Metal Oxide)	30V	3.6A (Ta)	2.5V, 10V	1.8V @ 250µA	3.6nC @ 4.5V	270pF @ 15V	±12V	Schottky Diode (Isolated)	1.39W (Ta)	65 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
IXFC96N15P	IXYS	MOSFET N-CH 150V 42A ISPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 48A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock3,392	MOSFET (Metal Oxide)	150V	42A (Tc)	10V	5V @ 4mA	110nC @ 10V	3500pF @ 25V	±20V	-	120W (Tc)	26 mOhm @ 48A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
PMV20XN,215	NXP	MOSFET N-CH 30V 4.8A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 510mW (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 4.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock138,720	MOSFET (Metal Oxide)	30V	4.8A (Ta)	2.5V, 4.5V	1.5V @ 250µA	10nC @ 4.5V	585pF @ 15V	±12V	-	510mW (Ta)	25 mOhm @ 4.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
IXFL82N60P	IXYS	MOSFET N-CH 600V 55A ISOPLUS 264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 41A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: ISOPLUS264?	Package: ISOPLUS264?	Stock7,424	MOSFET (Metal Oxide)	600V	55A (Tc)	10V	5V @ 8mA	240nC @ 10V	23000pF @ 25V	±30V	-	625W (Tc)	78 mOhm @ 41A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS264?	ISOPLUS264?
EPC2021ENGR	EPC	TRANS GAN 80V 60A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 14mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock2,144	GaNFET (Gallium Nitride)	80V	60A (Ta)	5V	2.5V @ 14mA	15nC @ 5V	1700pF @ 40V	+6V, -4V	-	-	2.5 mOhm @ 29A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
AOT288L	Alpha & Omega Semiconductor Inc.	MOSFET N CH 80V 10.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 93.5W (Tc) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,472	MOSFET (Metal Oxide)	80V	10.5A (Ta), 46A (Tc)	6V, 10V	3.4V @ 250µA	38nC @ 10V	1871pF @ 40V	±20V	-	2.1W (Ta), 93.5W (Tc)	9.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
BUK9614-55A,118	Nexperia USA Inc.	MOSFET N-CH 55V 73A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3307pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 149W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,800	MOSFET (Metal Oxide)	55V	73A (Tc)	4.5V, 10V	2V @ 1mA	-	3307pF @ 25V	±10V	-	149W (Tc)	13 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS4946NT1G	ON Semiconductor	MOSFET N-CH 30V SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890mW (Ta), 55.5W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock457,140	MOSFET (Metal Oxide)	30V	12.7A (Ta), 100A (Tc)	4.5V, 11.5V	2.5V @ 250µA	53nC @ 11.5V	3250pF @ 12V	±20V	-	890mW (Ta), 55.5W (Tc)	3.4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
STW10N105K5	STMicroelectronics	MOSFET N-CH 1050V 6A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1050V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock3,056	MOSFET (Metal Oxide)	1050V	6A (Tc)	10V	5V @ 100µA	21.5nC @ 10V	545pF @ 100V	30V	-	130W (Tc)	1.3 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STP80NF55-06FP	STMicroelectronics	MOSFET N-CH 55V 60A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock472,548	MOSFET (Metal Oxide)	55V	60A (Tc)	10V	4V @ 250µA	189nC @ 10V	4400pF @ 25V	±20V	-	45W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STD16N65M5	STMicroelectronics	MOSFET N-CH 650V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock19,032	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	5V @ 250µA	45nC @ 10V	1250pF @ 100V	±25V	-	90W (Tc)	299 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDC3512	Fairchild/ON Semiconductor	MOSFET N-CH 80V 3A SSOT-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock329,124	MOSFET (Metal Oxide)	80V	3A (Ta)	6V, 10V	4V @ 250µA	18nC @ 10V	634pF @ 40V	±20V	-	1.6W (Ta)	77 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
FQD8P10TM_F085	Fairchild/ON Semiconductor	MOSFET P-CH 100V 6.6A DPAK-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,408	MOSFET (Metal Oxide)	100V	6.6A (Tc)	10V	4V @ 250µA	15nC @ 10V	470pF @ 25V	±30V	-	2.5W (Ta), 44W (Tc)	530 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
CMLDM7120G TR	Central Semiconductor Corp	MOSFET N-CH 20V 1A SOT563 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock3,536	MOSFET (Metal Oxide)	20V	1A (Ta)	1.5V, 4V	1.2V @ 1mA	2.4nC @ 4.5V	220pF @ 10V	8V	-	150mW (Ta)	100 mOhm @ 500mA, 4.5V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563	SOT-563, SOT-666
STU16N60M2	STMicroelectronics	MOSFET N-CH 600V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock26,502	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 250µA	19nC @ 10V	700pF @ 100V	±25V	-	110W (Tc)	320 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
FDMS2572	Fairchild/ON Semiconductor	MOSFET N-CH 150V 4.5A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 47 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock154,440	MOSFET (Metal Oxide)	150V	4.5A (Ta), 27A (Tc)	6V, 10V	4V @ 250µA	43nC @ 10V	2610pF @ 75V	±20V	-	2.5W (Ta), 78W (Tc)	47 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerWDFN
IXFK110N07	IXYS	MOSFET N-CH 70V 110A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 70V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock103,464	MOSFET (Metal Oxide)	70V	110A (Tc)	10V	4V @ 8mA	480nC @ 10V	9000pF @ 25V	±20V	-	500W (Tc)	6 mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
DMN5L06WK-7	Diodes Incorporated	MOSFET N-CH 50V 300MA SC70-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock673,992	MOSFET (Metal Oxide)	50V	300mA (Ta)	1.8V, 5V	1V @ 250µA	-	50pF @ 25V	±20V	-	250mW (Ta)	2 Ohm @ 50mA, 5V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
SQJA88EP-T1_BE3	Vishay Siliconix	N-CHANNEL 40-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	35 nC @ 10 V	1800 pF @ 25 V	±20V	-	48W (Tc)	7mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPDQ60R010S7AXTMA1	Infineon Technologies	AUTOMOTIVE PG-HDSOP-22 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Stock390	MOSFET (Metal Oxide)	600 V	50A (Tc)	12V	4.5V @ 3.08mA	318 nC @ 12 V	11987 pF @ 300 V	±20V	-	694W (Tc)	10mOhm @ 50A, 12V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IPD85P04P407ATMA2	Infineon Technologies	MOSFET P-CH 40V 85A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock79,641	MOSFET (Metal Oxide)	40 V	85A (Tc)	-	4V @ 150µA	89 nC @ 10 V	6085 pF @ 25 V	±20V	-	88W (Tc)	7.3mOhm @ 85A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
AOT2142L	Alpha & Omega Semiconductor Inc.	MOSFET N-CHANNEL 40V 120A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	120A (Tc)	4.5V, 10V	2.3V @ 250µA	100 nC @ 10 V	8320 pF @ 20 V	±20V	-	312W (Tc)	1.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
FDN358P-NL-ML	MOSLEADER	P-Channel -30V -1.5A SOT-23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STL9P4LF6AG	STMicroelectronics	DISCRETE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat™ (3.3x3.3) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	31A (Tc)	4.5V, 10V	2.5V @ 250µA	48 nC @ 4.5 V	2540 pF @ 25 V	±18V	-	50W (Tc)	26mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat™ (3.3x3.3)	8-PowerVDFN
MCG60N03Y-TP	Micro Commercial Co	MOSFET N-CH DFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2294 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20.8W Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333 Package / Case: 8-VDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	60A	4.5V, 10V	2.5V @ 250µA	41 nC @ 10 V	2294 pF @ 15 V	±20V	-	20.8W	3.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3333	8-VDFN Exposed Pad
IPL65R1K5C6SE8211ATMA1	Infineon Technologies	IPL65R1K5 - 650V AND 700V COOLMO FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP3025SFDF-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V U-DFN2020- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	8.6A (Ta)	5V, 10V	2.6V @ 250µA	20 nC @ 10 V	1031 pF @ 15 V	±25V	-	1.3W (Ta)	19mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad