Page 1182 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP80N06S3L-08
Infineon Technologies

MOSFET N-CH 55V 80A TO-220

Package: TO-220-3

Stock2,512
64-4059PBF
Infineon Technologies

MOSFET N-CH 40V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,440
IRF630NS
Infineon Technologies

MOSFET N-CH 200V 9.3A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,936
5LN01SP
ON Semiconductor

MOSFET N-CH 50V 0.1A

Package: SC-72

Stock3,408
FQP70N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 70A TO-220

Package: TO-220-3

Stock163,476
HUFA76437S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 71A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,376
FQPF3N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 1.95A TO-220F

Package: TO-220-3 Full Pack

Stock5,984
ZXM64N03XTC
Diodes Incorporated

MOSFET N-CH 30V 5A 8MSOP

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock7,328
IRFL110TR
Vishay Siliconix

MOSFET N-CH 100V 1.5A SOT223

Package: TO-261-4, TO-261AA

Stock257,592
APTM100DA18TG
Microsemi Corporation

MOSFET N-CH 1000V 43A SP4

Package: SP4

Stock4,752
IXFX62N25
IXYS

MOSFET N-CH 250V 62A PLUS247

Package: TO-247-3

Stock4,944
IRFP4229PBF
Infineon Technologies

MOSFET N-CH 250V 44A TO-247AC

Package: TO-247-3

Stock5,840
SSM3K15ACT,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.1A CST3

Package: SC-101, SOT-883

Stock2,624
STB11NK50ZT4
STMicroelectronics

MOSFET N-CH 500V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock114,468
FQPF8N80CYDTU
Fairchild/ON Semiconductor

MOSFET N-CH 800V 8A TO-220F

Package: TO-220-3 Full Pack, Formed Leads

Stock7,552
IPD70P04P409ATMA1
Infineon Technologies

MOSFET P-CH TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,376
STH180N10F3-2
STMicroelectronics

MOSFET N-CH 100V 120A H2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock15,600
AUIRFS4310Z
Infineon Technologies

MOSFET N-CH 100V 127A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock23,244
FDMS7556S
Fairchild/ON Semiconductor

MOSFET N-CH 25V 35A POWER56

Package: 8-PowerTDFN

Stock55,980
CSD17510Q5A
Texas Instruments

MOSFET N-CH 30V 100A 8SON

Package: 8-PowerTDFN

Stock2,846,316

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP80N06S3L-08	Infineon Technologies	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6475pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock2,512	MOSFET (Metal Oxide)	55V	80A (Tc)	5V, 10V	2.2V @ 55µA	134nC @ 10V	6475pF @ 25V	±16V	-	105W (Tc)	7.9 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
64-4059PBF	Infineon Technologies	MOSFET N-CH 40V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,440	MOSFET (Metal Oxide)	40V	42A (Tc)	10V	4V @ 250µA	45nC @ 10V	1510pF @ 25V	±20V	-	90W (Tc)	9 mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF630NS	Infineon Technologies	MOSFET N-CH 200V 9.3A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 82W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,936	MOSFET (Metal Oxide)	200V	9.3A (Tc)	10V	4V @ 250µA	35nC @ 10V	575pF @ 25V	±20V	-	82W (Tc)	300 mOhm @ 5.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
5LN01SP	ON Semiconductor	MOSFET N-CH 50V 0.1A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 3-SPA Package / Case: SC-72	Package: SC-72	Stock3,408	MOSFET (Metal Oxide)	50V	100mA (Ta)	1.5V, 4V	1.3V @ 100µA	1.57nC @ 10V	6.6pF @ 10V	±10V	-	250mW (Ta)	7.8 Ohm @ 50mA, 4V	150°C (TJ)	Through Hole	3-SPA	SC-72
FQP70N08	Fairchild/ON Semiconductor	MOSFET N-CH 80V 70A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 155W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock163,476	MOSFET (Metal Oxide)	80V	70A (Tc)	10V	4V @ 250µA	98nC @ 10V	2700pF @ 25V	±25V	-	155W (Tc)	17 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
HUFA76437S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 60V 71A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 155W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 71A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,376	MOSFET (Metal Oxide)	60V	71A (Tc)	4.5V, 10V	3V @ 250µA	71nC @ 10V	2230pF @ 25V	±16V	-	155W (Tc)	14 mOhm @ 71A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF3N30	Fairchild/ON Semiconductor	MOSFET N-CH 300V 1.95A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 1.95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 980mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,984	MOSFET (Metal Oxide)	300V	1.95A (Tc)	10V	5V @ 250µA	7nC @ 10V	230pF @ 25V	±30V	-	20W (Tc)	2.2 Ohm @ 980mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
ZXM64N03XTC	Diodes Incorporated	MOSFET N-CH 30V 5A 8MSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock7,328	MOSFET (Metal Oxide)	30V	5A (Ta)	4.5V, 10V	1V @ 250µA	27nC @ 10V	950pF @ 25V	±20V	-	1.1W (Ta)	45 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MSOP	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRFL110TR	Vishay Siliconix	MOSFET N-CH 100V 1.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock257,592	MOSFET (Metal Oxide)	100V	1.5A (Tc)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	2W (Ta), 3.1W (Tc)	540 mOhm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
APTM100DA18TG	Microsemi Corporation	MOSFET N-CH 1000V 43A SP4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 43A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	Package: SP4	Stock4,752	MOSFET (Metal Oxide)	1000V	43A	10V	5V @ 5mA	372nC @ 10V	10400pF @ 25V	±30V	-	780W (Tc)	210 mOhm @ 21.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
IXFX62N25	IXYS	MOSFET N-CH 250V 62A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,944	MOSFET (Metal Oxide)	250V	62A (Tc)	10V	4V @ 4mA	240nC @ 10V	6600pF @ 25V	±20V	-	390W (Tc)	35 mOhm @ 31A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IRFP4229PBF	Infineon Technologies	MOSFET N-CH 250V 44A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 26A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock5,840	MOSFET (Metal Oxide)	250V	44A (Tc)	10V	5V @ 250µA	110nC @ 10V	4560pF @ 25V	±30V	-	310W (Tc)	46 mOhm @ 26A, 10V	-40°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
SSM3K15ACT,L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 0.1A CST3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	Package: SC-101, SOT-883	Stock2,624	MOSFET (Metal Oxide)	30V	100mA (Ta)	2.5V, 4V	1.5V @ 100µA	-	13.5pF @ 3V	±20V	-	100mW (Ta)	3.6 Ohm @ 10mA, 4V	150°C (TJ)	Surface Mount	CST3	SC-101, SOT-883
STB11NK50ZT4	STMicroelectronics	MOSFET N-CH 500V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock114,468	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4.5V @ 100µA	68nC @ 10V	1390pF @ 25V	±30V	-	125W (Tc)	520 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF8N80CYDTU	Fairchild/ON Semiconductor	MOSFET N-CH 800V 8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 59W (Tc) Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	Package: TO-220-3 Full Pack, Formed Leads	Stock7,552	MOSFET (Metal Oxide)	800V	8A (Tc)	10V	5V @ 250µA	45nC @ 10V	2050pF @ 25V	±30V	-	59W (Tc)	1.55 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3 (Y-Forming)	TO-220-3 Full Pack, Formed Leads
IPD70P04P409ATMA1	Infineon Technologies	MOSFET P-CH TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,376	MOSFET (Metal Oxide)	40V	73A (Tc)	10V	4V @ 120µA	70nC @ 10V	4810pF @ 25V	±20V	-	75W (Tc)	8.9 mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
STH180N10F3-2	STMicroelectronics	MOSFET N-CH 100V 120A H2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6665pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock15,600	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	4V @ 250µA	114.6nC @ 10V	6665pF @ 25V	±20V	-	315W (Tc)	4.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-3, D2Pak (2 Leads + Tab) Variant
AUIRFS4310Z	Infineon Technologies	MOSFET N-CH 100V 127A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock23,244	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 150µA	170nC @ 10V	6860pF @ 50V	±20V	-	250W (Tc)	6 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS7556S	Fairchild/ON Semiconductor	MOSFET N-CH 25V 35A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8965pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock55,980	MOSFET (Metal Oxide)	25V	35A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	133nC @ 10V	8965pF @ 13V	±20V	-	2.5W (Ta), 96W (Tc)	1.2 mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
CSD17510Q5A	Texas Instruments	MOSFET N-CH 30V 100A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,846,316	MOSFET (Metal Oxide)	30V	20A (Ta), 100A (Tc)	4.5V, 10V	2.1V @ 250µA	8.3nC @ 4.5V	1250pF @ 15V	±20V	-	3W (Ta)	5.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
SI1012R-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 500MA SC-75A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75A Package / Case: SC-75A	Package: SC-75A	Stock4,487,496	MOSFET (Metal Oxide)	20V	500mA (Ta)	1.8V, 4.5V	900mV @ 250µA	0.75nC @ 4.5V	-	±6V	-	150mW (Ta)	700 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75A	SC-75A
UJ3C120150K3S	Qorvo	SICFET N-CH 1200V 18.4A TO247-3 FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 5.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 166.7W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock1,503	SiCFET (Cascode SiCJFET)	1200 V	18.4A (Tc)	12V	5.5V @ 10mA	30 nC @ 15 V	738 pF @ 100 V	±25V	-	166.7W (Tc)	180mOhm @ 5A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
PJD1NA60_L2_00001	Panjit International Inc.	600 V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 14Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	1A (Ta)	10V	4V @ 250µA	3.3 nC @ 10 V	95 pF @ 25 V	±30V	-	27W (Tc)	14Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SI2304DDS-T1-BE3	Vishay Siliconix	MOSFET N-CH 30V 3.3A/3.6A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock10,695	MOSFET (Metal Oxide)	30 V	3.3A (Ta), 3.6A (Tc)	4.5V, 10V	2.2V @ 250µA	6.7 nC @ 10 V	235 pF @ 15 V	±20V	-	1.1W (Ta), 1.7W (Tc)	60mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FQB47P06TM-AM002	onsemi	MOSFET P-CH 60V 47A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 160W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	47A (Tc)	10V	4V @ 250µA	110 nC @ 10 V	3600 pF @ 25 V	±25V	-	3.75W (Ta), 160W (Tc)	26mOhm @ 23.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMP3125L-7-ML	MOSLEADER	P 30V 2.5A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPHR7904PB-L1XHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 150A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: -	Stock46,050	MOSFET (Metal Oxide)	40 V	150A (Ta)	6V, 10V	3V @ 1mA	85 nC @ 10 V	6650 pF @ 10 V	±20V	-	960mW (Ta), 170W (Tc)	0.79mOhm @ 75A, 10V	175°C	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
IXFX120N60X3	IXYS	DISCRETE MOSFET 120A 600V X3 PLU FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-